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Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (111), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm

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Price range: $73.00 through $966.00
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Prime Si+SiO2 Wafer (wet) Size: 3”, Orientation: (111), Boron Doped, 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm
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Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 100 nm

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Price range: $76.00 through $1,158.00
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Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

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Price range: $75.00 through $1,068.00
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Prime Si+SiO2 Wafer (dry) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm
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Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0.001 – 0.01 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

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Price range: $76.00 through $1,158.00
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Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm
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Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 400 nm

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Price range: $75.00 through $1,068.00
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Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 400 nm
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Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

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Price range: $85.00 through $1,338.00
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Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm
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Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (111), Phosphor Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1000 nm

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Price range: $76.00 through $1,278.00
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Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (111), Phosphor Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1000 nm
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Prime Si+SiO2 Wafer (dry), Size: 6”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm

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Price range: $95.00 through $1,578.00
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Prime Si+SiO2 Wafer (dry) Size: 6”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm
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Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

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Price range: $115.00 through $2,520.00
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Quartz Wafer (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch)
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Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 300 ± 25 μm

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Price range: $100.00 through $1,758.00
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Quartz Wafer (X-Cut), Size: 4”, 2-Side Polished, Thickness: 300 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch) 4” Orientation
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Quartz Wafer, (AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

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Price range: $100.00 through $1,758.00
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Quartz Wafer (AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch)
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Quartz Wafer, (ST-Cut), Size: 4”, 1-Side Polished, Thickness: 625 ± 25 μm

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Price range: $100.00 through $1,758.00
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Quartz Wafer (ST-Cut), Size: 4”, 1-Side Polished, Thickness: 625 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch) 4”
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Fused Silica Wafer, Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

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Price range: $76.00 through $1,620.00
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Fused Silica Wafer Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm Technical Properties: Quality Prime Materials Fused Silica Size
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Fused Silica Wafer, Size: 4”, 2-Side Polished, Thickness: 1000 ± 25 μm

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Price range: $58.00 through $1,140.00
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Fused Silica Wafer Size: 4”, 2-Side Polished, Thickness: 1000 ± 25 μm Technical Properties: Quality Prime Materials Fused Silica Size(inch)
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Fused Silica Wafer, Size: 6”, 2-Side Polished, Thickness: 700 ± 25 μm

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Price range: $76.00 through $1,620.00
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Fused Silica Wafer Size: 6”, 2-Side Polished, Thickness: 700 ± 25 μm Technical Properties: Quality Prime Materials Fused Silica Size
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Fused Silica Wafer, Size: 10mm x 20mm, 2-Side Polished, Thickness: 500 ± 00 μm,

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Price range: $58.00 through $1,140.00
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Fused Silica Wafer Size: 10 mm x 20 mm, 2-Side Polished, Thickness: 500 ± 00 μm Technical Properties: Quality Prime
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Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm

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Price range: $75.00 through $1,620.00
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Prime Si+Si3N4 Wafer Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 300 nm Technical Properties: Quality Prime
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm

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Price range: $66.00 through $1,350.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 150 nm Technical Properties: Quality Prime
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Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

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Price range: $110.00 through $2,370.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm Technical Properties: Quality Prime
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

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Price range: $77.00 through $1,560.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm Technical Properties: Quality Prime
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

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Price range: $83.00 through $1,740.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm Technical Properties: Quality Prime Materials Si+Si3N4 Size (inch)
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Gallium Arsenide (GaAs) Wafer, Size: 4”, Thickness: 300± 25 μm, Double Side Polished, EPI-ready

Price range: $237.00 through $4,776.00
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Gallium Arsenide (GaAs) Wafer Size: 4”, Double Side Polished, Thickness: 300± 25 μm, EPI-ready Technical Properties: Quality  GaAs Materials  GaAs
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

Price range: $162.00 through $3,108.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Thickness: 350±25 μm, Single Side Polished Technical Properties: Quality  GaAs Materials  GaAs Size (inch)
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, EPI-ready

Price range: $189.00 through $3,588.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Thickness: 350±25 μm, Orientation: 100 Technical Properties: Quality  GaAs Materials  GaAs Size (inch)  2”
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Silicon on Insulator (SOI) Wafers, Size: 4”, Thickness: 725 μm, P type (Boron doped)

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Price range: $898.00 through $3,936.00
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Silicon on Insulator (SOI) Wafers Size: 4”, Thickness: 750 μm, P type (Boron doped) Technical Properties: Size (inch)  4” Thickness (μm)
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready, Mobility: 1000-3000

Price range: $189.00 through $3,588.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Thickness: 350±25 μm, Mobility: 1000-3000 Technical Properties: Quality  GaAs Materials  GaAs Size (inch)  2” Thickness
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Double Side Polished, EPI-ready

Price range: $189.00 through $3,588.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Thickness: 350±25 μm, Double Side Polished Technical Properties: Quality  GaAs Materials  GaAs Size (inch)
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Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

Price range: $189.00 through $3,588.00
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Gallium Arsenide (GaAs) Wafer Size: 4”, Thickness: 350±25 μm, Single Side Polished Technical Properties: Quality  GaAs Materials  GaAs Size (inch)
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Silicon on Insulator (SOI) Wafers, Size: 6”, Device Thickness: 625 nm, P type

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Price range: $1,128.00 through $5,340.00
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Silicon on Insulator (SOI) Wafers Size: 6”, Device Thickness: 625 nm, P type Technical Properties: Size (inch)  6” Thickness (μm)
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Silicon on Insulator (SOI) Wafers, Size: 6”, Device Thickness: 340 nm, P type

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Price range: $1,134.00 through $5,370.00
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Silicon on Insulator (SOI) Wafers Size: 6”, Device Thickness: 340 nm, P type Technical Properties: Size (inch)  6” Thickness (μm)
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Silicon on Insulator (SOI) Wafers, Size: 8”, Device Thickness: 300 nm, P type

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Price range: $1,147.00 through $5,352.00
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Silicon on Insulator (SOI) Wafers Size: 8”, Device Thickness: 300 nm, P type Technical Properties: Size (inch)  8” Thickness (μm)
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350±25 μm, Orientation: 100, Single Side Polished, EPI-Ready

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Price range: $432.00 through $1,968.00
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Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 100 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

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Price range: $432.00 through $1,968.00
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Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 111 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

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Price range: $414.00 through $1,968.00
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Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 100 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

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Price range: $414.00 through $1,968.00
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Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 111 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready

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Price range: $672.00 through $3,168.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 100 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

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Price range: $672.00 through $3,168.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 111 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

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Price range: $534.00 through $2,508.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 100 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

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Price range: $534.00 through $2,508.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 111 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Silicon Carbide Wafer (SiC-4H) – 4H , Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

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Price range: $297.00 through $1,302.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality  Mechanical Grade Size (inch)  2”
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Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready

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Price range: $1,536.00 through $7,176.00
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Indium Phosphide (InP) Wafers Size: 4”, Thickness: 625± 25 μm, Orientation: 100 Technical Properties: Size (inch)  4” Thickness (μm)  625±
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Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

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Price range: $1,536.00 through $7,176.00
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Indium Phosphide (InP) Wafers Size: 4”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Size (inch)  4” Thickness (μm)  625±
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Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

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Price range: $828.00 through $3,816.00
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Indium Phosphide (InP) Wafers Size: 4”, Thickness: 625± 25 μm, Orientation: 100 Technical Properties: Size (inch)  4” Thickness (μm)  625±
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Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

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Price range: $828.00 through $3,816.00
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Indium Phosphide (InP) Wafers Size: 4”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Size (inch) 4” Thickness (μm) 625±
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready, Dopant: Iron (N Type)

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Price range: $822.00 through $3,936.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600± 25 μm, Orientation: 100 Technical Properties: Size (inch)  3” Thickness (μm)  600±
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111 , Single Side Polished, EPI-Ready, Dopant: Iron (N Type)

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Price range: $822.00 through $3,936.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600± 25 μm, Orientation: 111 Technical Properties: Size (inch)  3” Thickness (μm)  600±
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

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Price range: $594.00 through $2,748.00
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Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness (μm)
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, EPI-Ready

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Price range: $594.00 through $2,748.00
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Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness (μm)
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Silicon Carbide Wafer (SiC-4H)- 4H, Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 95%

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Price range: $456.00 through $2,010.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality Dummy Grade Size (inch)  2”
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, Testing Grade

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Price range: $475.00 through $2,196.00
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Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 100 Technical Properties: Quality  Testing Grade Size (inch)  2” Thickness
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, Testing Grade

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Price range: $475.00 through $2,196.00
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Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 111 Technical Properties: Quality  Testing Grade Size (inch)  2” Thickness
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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

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Price range: $1,014.00 through $4,794.00
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Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  3” Thickness (μm)
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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, EPI-Ready

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Price range: $1,014.00 through $4,794.00
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Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  3” Thickness (μm)
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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, Testing Grade

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Price range: $813.00 through $3,801.00
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Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Quality  Testing Grade Size (inch)  3” Thickness
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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, Testing Grade

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Price range: $813.00 through $3,801.00
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Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Quality  Testing Grade Size (inch)  3” Thickness
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Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 100, EPI-Ready

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Price range: $1,699.00 through $7,041.00
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Gallium Antimonide (GaSb) Wafers Size: 4”, Thickness: 1000± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  4” Thickness
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Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 111, EPI-Ready

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Price range: $1,699.00 through $7,041.00
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Gallium Antimonide (GaSb) Wafers Size: 4”, Thickness: 1000± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  4” Thickness
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Testing Grade, 4H Area: 80%

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Price range: $547.00 through $2,412.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 2” , Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality  Testing Grade Size (inch)
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Silicon Carbide Wafer (SiC-6H) – 6H , Size: 2”, Thickness: 350 μm, Dummy Grade, Usable Area: 95%

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Price range: $712.00 through $3,153.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-6H) – 6H Size: 2”, Thickness: 350 μm, Usable Area: 95% Technical Properties: Quality  Dummy Grade Size (inch)  2”
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Production Grade, 4H Area: 1

Price range: $813.00 through $3,571.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 1 Technical Properties: Quality  Production Grade Size (inch)  2”