Gallium Antimonide (GaSb) Wafers
Size: 3”, Thickness: 625± 25 μm, Orientation: 111
Technical Properties:
| Quality | Testing Grade |
| Size (inch) | 3” |
| Thickness (μm) | 625± 25 |
| Polished | Single Side |
| Dopant | Tellurium ( N type ) |
| Orientation | 111 |
| Mobility | 2000-3500 |
| EPD | ≤2000 |
| Growth method | VGF |
| OF Length | 22±2 |
| IF Length | 11±1 |
Fields of Application for Gallium Antimonide (GaSb)
The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt.
Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds.
Gallium antimonide (GaSb) is supplied in polished wafer form.
Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity.
Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation.
Thickness and orientation of these wafers can be modified with additives.
Czochralski method is used to provide the growh of pure gallium and antimonide elements.
The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth.
They are supplied in polished 1 side or 2 sides and cut forms.
- Gallium antimonide (GaSb) is used for infrared detectors.
- Gallium antimonide (GaSb) is used for infrared LEDs.
- Gallium antimonide (GaSb) is used for transistors.
- Gallium antimonide (GaSb) is used for lasers.
- Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
