Borosilicate Wafer, Size: 3”, 1-Side polished, Thickness: 150 ± 25 μm

Price range: $67.00 through $684.00
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Boroslicate Wafer Size: 3”, 1-Side polished, Thickness: 150 ± 25 μm Technical Properties: Materials Borosilicate Size(inch) 3” Orientation Coating Thickness (μm)

Borosilicate Wafer, Size: 3”, 2-Side polished, Thickness: 500 ± 25 μm

Price range: $58.00 through $648.00
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Boroslicate Wafer Size: 3”, 2-Side polished, Thickness: 500 ± 25 μm Technical Properties: Materials Borosilicate Size(inch) 3” Orientation Coating Thickness (μm)

Borosilicate Wafer, Size: 4”, 1-Side polished, Thickness: 1000 ± 20 μm

Price range: $64.00 through $738.00
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Boroslicate Wafer Size: 4”, 1-Side polished, Thickness: 1000 ± 20 μm Technical Properties: Materials Borosilicate Size (inch) 4” Orientation Coating

Borosilicate Wafer, Size: 4”, 1-Side polished, Thickness: 700 ± 25 μm

Price range: $62.00 through $708.00
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Boroslicate Wafer Size: 4”, 1-Side polished, Thickness: 700 ± 25 μm Technical Properties: Materials Borosilicate Size (inch) 4” Orientation Coating

Borosilicate Wafer, Size: 4”, 2-Side polished, Thickness: 200 ± 20 μm

Price range: $76.00 through $1,128.00
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Boroslicate Wafer Size: 4”, 2-Side polished, Thickness: 200 ± 20 μm Technical Properties: Materials Borosilicate Size (inch) 4” Orientation Coating

Borosilicate Wafer, Size: 4”, 2-Side polished, Thickness: 500 ± 20 μm

Price range: $74.00 through $1,098.00
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Boroslicate Wafer Size: 4”, 2-Side polished, Thickness: 500 ± 20 Technical Properties: Materials Borosilicate Size (inch) 4” Orientation Coating Thickness (μm)

Borosilicate Wafer, Size: 4”, 2-Side polished, Thickness: 500 ± 25 μm

Price range: $72.45 through $932.40
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Please contact us for quotes on larger quantities !!! Boroslicate Wafer Size: 4”, 2-Side polished, Thickness: 500 ± 25 μm Technical

Borosilicate Wafer, Size: 4”, 2-Side polished, Thickness: 700 ± 20 μm

Price range: $70.00 through $978.00
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Boroslicate Wafer Size: 4”, 2-Side polished, Thickness: 700 ± 20 μm Technical Properties: Materials Borosilicate Size (inch) 4” Orientation Coating

Borosilicate Wafer, Size: 6”, 1-Side polished, Thickness: 700 ± 25 μm

Price range: $79.00 through $1,188.00
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Boroslicate Wafer Size: 6”, 1-Side polished, Thickness: 700 ± 25 μm Technical Properties: Materials Borosilicate Size (inch) 6” Orientation Coating

Borosilicate Wafer, Size: 6”, 2- Side polished, Thickness: 1100 ± 20 μm

Price range: $82.00 through $1,278.00
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Boroslicate Wafer Size: 6”, 2- Side polished, Thickness: 1100 ± 20 μm Technical Properties: Materials Borosilicate Size (inch) 6” Orientation

Borosilicate Wafer, Size: 6”, 2-Side polished, Thickness: 700 ± 20 μm

Price range: $81.00 through $1,188.00
Select options This product has multiple variants. The options may be chosen on the product page
Boroslicate Wafer Size: 6”, 2-Side polished, Thickness: 700 ± 20 μm Technical Properties: Materials Borosilicate Size (inch) 6” Orientation Coating

Borosilicate Wafer, Size: 8”, 2-Side Polished, Thickness: 1250 ± 25 μm

Price range: $121.00 through $2,238.00
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Borosilicate Wafer Size: 8”, 2- Side Polished, Thickness: 1250 ± 25 μm Technical Properties: Materials Borosilicate Size (inch) 8” Orientation

Coin Style Single Wafer Shipper, 2’’ / 51 mm , Natural PP

Price range: $7.00 through $49.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece: 7 € 5 pieces: 29 € 10 pieces: 44 € Coin Style Single Wafer Shipper, 2’’ / 51 mm , Natural PP  Introduction
  • The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon wafers, but are equally suitable for glass, quartz, sapphire, GaAs and other thin round wafers in sizes from Ø2” to 6” or Ø51 to 150mm.
  • These wafer shippers/carriers are also known as coin shippers
  • They comprise of three parts: base, spider spring and locking cap.
  • The inside of the base is concave to ensure that the wafers are held at the edges only.
  • The spider spring holds the wafer in place once the cap is locked to the base.
  • Available in sizes of 2” to 6” or equivalent 51 to 150mm diameter which a translucent, natural polypropylene

Product #

Wafer Size

Dimensions

Material

NG01WS0101 2” / 51mm Ø61 x 13 mm Natural translucent PP
  WAFER SHIPPER FEATURES •  For shipping and storage of 2'' wafers •  Positive closure •  Holds one wafer facedown •  Wafer face contact is on the edge only •  Eight spring cushion holds the wafer •  Stackable WAFER SHIPPER SPECIFICATIONS Polypropylene (PP) Properties: •  Translucent/milky white •  Low dielectric constant (insulating) •  Not hygroscopic (water absorption <0.01%) •  Continuous use temperature limit: 55 C •  Melting temperature: 164 C •  Specific gravity: 0.9g/cm^3 •  Chemical resistance: IPA OK, Acetone OK The “Coin Style” single wafer shippers or wafer holders are available in different sizes and materials (Natural PP). For easy loading/unloading in automated or manual applications. They are impact resistant with a screw-on lid for secure packing. Single wafer shipping container for safe transporting of your 2" (51mm) wafers. The  coinstyle shippers are cylindrical shaped and usually include a sping (they can also be ordered without a spring). The coin style shippers are designed to absorb impact and have a screw-on lid for secure packing of your wafers.

Coin Style Single Wafer Shipper, 2’’ / 51 mm , Natural PP

Price range: $9.45 through $55.65
Select options This product has multiple variants. The options may be chosen on the product page
Introduction The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon

Coin Style Single Wafer Shipper, 3’’ / 76 mm , Natural PP

Price range: $8.70 through $53.00
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1 adet : 7.8€ 5 adet:  32€ 10 adet: 48€ Coin Style Single Wafer Shipper, 3’’ / 76 mm , Natural PP  Introduction
  • The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon wafers, but are equally suitable for glass, quartz, sapphire, GaAs and other thin round wafers in sizes from Ø2” to 6” or Ø25 to 150mm.
  • These wafer shippers/carriers are also known as coin shippers
  • They comprise of three parts: base, spider spring and locking cap.
  • The inside of the base is concave to ensure that the wafers are held at the edges only.
  • The spider spring holds the wafer in place once the cap is locked to the base.
  • Available in sizes of 2” to 6” or equivalent 51 to 150mm diameter which a translucent, natural polypropylene

Product #

Wafer Size

Dimensions

Material

NG01WS0102 3” / 76 mm Ø85 x 13 mm Natural translucent PP
  WAFER SHIPPER FEATURES •  For shipping and storage of 3'' wafers •  Positive closure •  Holds one wafer facedown •  Wafer face contact is on the edge only •  Eight spring cushion holds the wafer •  Stackable WAFER SHIPPER SPECIFICATIONS Polypropylene (PP) Properties: •  Translucent/milky white •  Low dielectric constant (insulating) •  Not hygroscopic (water absorption <0.01%) •  Continuous use temperature limit: 55 C •  Melting temperature: 164 C •  Specific gravity: 0.9g/cm^3 •  Chemical resistance: IPA OK, Acetone OK The “Coin Style” single wafer shippers or wafer holders are available in different sizes and materials (Natural PP). For easy loading/unloading in automated or manual applications. They are impact resistant with a screw-on lid for secure packing. Single wafer shipping container for safe transporting of your 3" (76 mm) wafers. The  coinstyle shippers are cylindrical shaped and usually include a sping (they can also be ordered without a spring). The coin style shippers are designed to absorb impact and have a screw-on lid for secure packing of your wafers.

Coin Style Single Wafer Shipper, 3’’ / 76 mm , Natural PP

Price range: $10.05 through $74.00
Select options This product has multiple variants. The options may be chosen on the product page
Introduction The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon

Coin Style Single Wafer Shipper, 4’’ / 100 mm , Natural PP

Price range: $9.41 through $58.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece: 8.4 € 5 pieces: 34 € 10 pieces: 52 € Coin Style Single Wafer Shipper, 4’’ / 100 mm , Natural PP  Introduction
  • The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon wafers, but are equally suitable for glass, quartz, sapphire, GaAs and other thin round wafers in sizes from Ø2” to 6” or Ø51 to 150mm.
  • These wafer shippers/carriers are also known as coin shippers
  • They comprise of three parts: base, spider spring and locking cap.
  • The inside of the base is concave to ensure that the wafers are held at the edges only.
  • The spider spring holds the wafer in place once the cap is locked to the base.
  • Available in sizes of 2” to 6” or equivalent 51 to 150mm diameter which a translucent, natural polypropylene

Product #

Wafer Size

Dimensions

Material

NG01WS0103 4” / 100 mm Ø130 x 15 mm Natural translucent PP
  WAFER SHIPPER FEATURES •  For shipping and storage of 4'' wafers •  Positive closure •  Holds one wafer facedown •  Wafer face contact is on the edge only •  Eight spring cushion holds the wafer •  Stackable WAFER SHIPPER SPECIFICATIONS Polypropylene (PP) Properties: •  Translucent/milky white •  Low dielectric constant (insulating) •  Not hygroscopic (water absorption <0.01%) •  Continuous use temperature limit: 55 C •  Melting temperature: 164 C •  Specific gravity: 0.9g/cm^3 •  Chemical resistance: IPA OK, Acetone OK The “Coin Style” single wafer shippers or wafer holders are available in different sizes and materials (Natural PP). For easy loading/unloading in automated or manual applications. They are impact resistant with a screw-on lid for secure packing. Single wafer shipping container for safe transporting of your 4" (100 mm) wafers. The  coinstyle shippers are cylindrical shaped and usually include a sping (they can also be ordered without a spring). The coin style shippers are designed to absorb impact and have a screw-on lid for secure packing of your wafers.

Coin Style Single Wafer Shipper, 4’’ / 100 mm , Natural PP

Price range: $10.00 through $63.00
Select options This product has multiple variants. The options may be chosen on the product page
Introduction The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon

Coin Style Single Wafer Shipper, 5’’ / 125 mm , Natural PP

Price range: $9.52 through $59.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece: 8.5 € 5 pieces: 35 € 10 pieces: 53 € Coin Style Single Wafer Shipper, 5’’ / 125 mm , Natural PP  Introduction
  • The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon wafers, but are equally suitable for glass, quartz, sapphire, GaAs and other thin round wafers in sizes from Ø2” to 6” or Ø51 to 150mm.
  • These wafer shippers/carriers are also known as coin shippers
  • They comprise of three parts: base, spider spring and locking cap.
  • The inside of the base is concave to ensure that the wafers are held at the edges only.
  • The spider spring holds the wafer in place once the cap is locked to the base.
  • Available in sizes of 2” to 6” or equivalent 51 to 150mm diameter which a translucent, natural polypropylene
  WAFER SHIPPER FEATURES •  For shipping and storage of 5'' wafers •  Positive closure •  Holds one wafer facedown •  Wafer face contact is on the edge only •  Eight spring cushion holds the wafer •  Stackable WAFER SHIPPER SPECIFICATIONS Polypropylene (PP) Properties: •  Translucent/milky white •  Low dielectric constant (insulating) •  Not hygroscopic (water absorption <0.01%) •  Continuous use temperature limit: 55 C •  Melting temperature: 164 C •  Specific gravity: 0.9g/cm^3 •  Chemical resistance: IPA OK, Acetone OK The “Coin Style” single wafer shippers or wafer holders are available in different sizes and materials (Natural PP). For easy loading/unloading in automated or manual applications. They are impact resistant with a screw-on lid for secure packing. Single wafer shipping container for safe transporting of your 5" (150 mm) wafers. The  coinstyle shippers are cylindrical shaped and usually include a sping (they can also be ordered without a spring). The coin style shippers are designed to absorb impact and have a screw-on lid for secure packing of your wafers.

Coin Style Single Wafer Shipper, 5’’ / 125 mm , Natural PP

Price range: $10.00 through $63.00
Select options This product has multiple variants. The options may be chosen on the product page
Introduction The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon

Coin Style Single Wafer Shipper, 6’’ / 150 mm , Natural PP

Price range: $9.60 through $62.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece: 8.6 € 5 pieces: 37 € 10 pieces: 56 € Coin Style Single Wafer Shipper, 6’’ / 150 mm , Natural PP  Introduction
  • The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon wafers, but are equally suitable for glass, quartz, sapphire, GaAs and other thin round wafers in sizes from Ø2” to 6” or Ø51 to 150mm.
  • These wafer shippers/carriers are also known as coin shippers
  • They comprise of three parts: base, spider spring and locking cap.
  • The inside of the base is concave to ensure that the wafers are held at the edges only.
  • The spider spring holds the wafer in place once the cap is locked to the base.
  • Available in sizes of 2” to 6” or equivalent 51 to 150mm diameter which a translucent, natural polypropylene

Product #

Wafer Size

Dimensions

Material

NG01WS0401 6” / 150 mm Ø160 x 20 mm Natural translucent PP
  WAFER SHIPPER FEATURES •  For shipping and storage of 6'' wafers •  Positive closure •  Holds one wafer facedown •  Wafer face contact is on the edge only •  Eight spring cushion holds the wafer •  Stackable WAFER SHIPPER SPECIFICATIONS Polypropylene (PP) Properties: •  Translucent/milky white •  Low dielectric constant (insulating) •  Not hygroscopic (water absorption <0.01%) •  Continuous use temperature limit: 55 C •  Melting temperature: 164 C •  Specific gravity: 0.9g/cm^3 •  Chemical resistance: IPA OK, Acetone OK The “Coin Style” single wafer shippers or wafer holders are available in different sizes and materials (Natural PP). For easy loading/unloading in automated or manual applications. They are impact resistant with a screw-on lid for secure packing. Single wafer shipping container for safe transporting of your 6" (150 mm) wafers. The  coinstyle shippers are cylindrical shaped and usually include a sping (they can also be ordered without a spring). The coin style shippers are designed to absorb impact and have a screw-on lid for secure packing of your wafers.

Coin Style Single Wafer Shipper, 6’’ / 150 mm , Natural PP

Price range: $10.50 through $70.35
Select options This product has multiple variants. The options may be chosen on the product page
Introduction The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon

Dummy CZ-Si Wafer, Size: 3”, Orientation: (111), Phosphor Doped, Resistivity: 0,001-100 (ohm.cm), 1-Side Polished, Thickness: 340 ± 25 μm

Price range: $58.00 through $716.00
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1 piece/52 € 5 pieces/160 € 25 pieces/640 €   Please ask for amount of stock before placing an order on Wafer Products Please contact us for quotes on larger quantities !!!

Dummy CZ-Si Wafer

Size: 3”, Orientation: (111), Phosphor Doped, 1-Side Polished

Technical Properties:

Quality Dummy
Materials CZ-Si
Size (inch) 3”
Orientation (111)
Coating
Thickness (μm) 340 ± 25
Doping Phosphor
Resistivity (ohm.cm) 0,001-100
Polished One Side
Dummy is a grade of wafers, which is also referred as “test wafer” a grade lower than prime. Dummy CZ Si wafers are often doped with arsenic. Test grade wafers are high quality but have less stringent properties than prime grade wafers, usually failing for one or more of the Semiconductor Equipment and Materials International (SEMI) standards. Test grade wafers are often used in applications that require a large quantity of wafers for equipment and fabrication testing. Even if you are doing very high end R&D work it is much more cost effective to develop a process using test wafers and then do the final checks using Prime or Epi-Prime wafers.

Dummy CZ-Si Wafer, Size: 4”, Orientation: (111), Phosphor Doped, Resistivity: 1-50 (ohm.cm), 2-Side Polished, Thickness: 525 ± 25 μm

Price range: $57.00 through $688.00
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1 piece/51 € 5 pieces/155 € 25 pieces/615 €   Please ask for amount of stock before placing an order on Wafer Products Please contact us for quotes on larger quantities !!! 

Dummy CZ-Si Wafer

Size: 4”, Orientation: (111), Phosphor Doped, 2-Side Polished

Technical Properties:

Quality Dummy
Materials CZ-Si
Size (inch) 4”
Orientation (111)
Coating  
Thickness (μm) 525 ± 25
Doping Phosphor
Resistivity (ohm.cm) 1-50
Polished Double Side
Dummy is a grade of wafers, which is also referred as “test wafer” a grade lower than prime. Dummy CZ Si wafers are often doped with arsenic. Test grade wafers are high quality but have less stringent properties than prime grade wafers, usually failing for one or more of the Semiconductor Equipment and Materials International (SEMI) standards. Test grade wafers are often used in applications that require a large quantity of wafers for equipment and fabrication testing. Even if you are doing very high end R&D work it is much more cost effective to develop a process using test wafers and then do the final checks using Prime or Epi-Prime wafers.

Dummy CZ-Si Wafer, Size: 6”, Orientation: (100), Boron Doped, Resistivity: 0.001 – 100 (ohm.cm), 1-Side Polished, Thickness: 650 ± 50 μm

Price range: $60.00 through $800.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/54 € 5 pieces/175 € 25 pieces/715 €   Please ask for amount of stock before placing an order on Wafer Products Please contact us for quotes on larger quantities !!!

Dummy CZ-Si Wafer

Size: 6”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 650 ± 50 μm

Technical Properties:

Quality Dummy
Materials CZ-Si
Size (inch) 6”
Orientation (100)
Coating  
Thickness (μm) 650 ± 50 μm
Doping Boron
Resistivity (ohm.cm) 0.001 - 100
Polished One Side
Dummy is a grade of wafers, which is also referred as “test wafer” a grade lower than prime. Dummy CZ Si wafers are often doped with arsenic. Test grade wafers are high quality but have less stringent properties than prime grade wafers, usually failing for one or more of the Semiconductor Equipment and Materials International (SEMI) standards. Test grade wafers are often used in applications that require a large quantity of wafers for equipment and fabrication testing. Even if you are doing very high end R&D work it is much more cost effective to develop a process using test wafers and then do the final checks using Prime or Epi-Prime wafers.

Dummy CZ-Si Wafer, Size: 6”, Orientation: (100), Boron Doped, Resistivity: 5-10 (ohm.cm), 1-Side Polished, Thickness: 675 ± 25 μm

Price range: $64.00 through $740.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/58 € 5 pieces/190 € 25 pieces/740 €   Please ask for amount of stock before placing an order on Wafer Products Please contact us for quotes on larger quantities !!!

Dummy CZ-Si Wafer

Size: 6”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 675 ± 25 μm

Technical Properties:

Quality Dummy
Materials CZ-Si
Size (inch) 6”
Orientation (100)
Coating  
Thickness (μm) 675 ± 25 μm
Doping Boron
Resistivity (ohm.cm) 5-10
Polished One Side
Dummy is a grade of wafers, which is also referred as “test wafer” a grade lower than prime. Dummy CZ Si wafers are often doped with arsenic. Test grade wafers are high quality but have less stringent properties than prime grade wafers, usually failing for one or more of the Semiconductor Equipment and Materials International (SEMI) standards. Test grade wafers are often used in applications that require a large quantity of wafers for equipment and fabrication testing. Even if you are doing very high end R&D work it is much more cost effective to develop a process using test wafers and then do the final checks using Prime or Epi-Prime wafers.

Dummy CZ-Si Wafer, Size: 6”, Orientation: (100), Phosphor Doped, Resistivity: 0.001 – 100 (ohm.cm), 1-Side Polished, Thickness: 650 ± 50 μm

Price range: $60.00 through $800.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/54 € 5 pieces/175 € 25 pieces/715 €   Please ask for amount of stock before placing an order on Wafer Products Please contact us for quotes on larger quantities !!!

Dummy CZ-Si Wafer

Size: 6”, Orientation: (100), Phosphor Doped, 1-Side Polished, Thickness: 650 ± 50 μm

Technical Properties:

Quality Dummy
Materials CZ-Si
Size (inch) 6”
Orientation (100)
Coating  
Thickness (μm) 650 ± 50 μm
Doping Phosphor
Resistivity (ohm.cm) 0.001 - 100
Polished One Side
Dummy is a grade of wafers, which is also referred as “test wafer” a grade lower than prime. Dummy CZ Si wafers are often doped with arsenic. Test grade wafers are high quality but have less stringent properties than prime grade wafers, usually failing for one or more of the Semiconductor Equipment and Materials International (SEMI) standards. Test grade wafers are often used in applications that require a large quantity of wafers for equipment and fabrication testing. Even if you are doing very high end R&D work it is much more cost effective to develop a process using test wafers and then do the final checks using Prime or Epi-Prime wafers.

Dummy CZ-Si Wafer, Size: 8”, Orientation: (100), Boron Doped, Resistivity: 0.001 – 1000 (ohm.cm), 1-Side Polished, Thickness: 725 ± 50 μm

Price range: $68.00 through $968.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/61 € 5 pieces/205 € 25 pieces/865 €   Please ask for amount of stock before placing an order on Wafer Products Please contact us for quotes on larger quantities !!!

Dummy CZ-Si Wafer

Size: 8”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 725 ± 50 μm

Technical Properties:

Quality Dummy
Materials CZ-Si
Size (inch) 8”
Orientation (100)
Coating  
Thickness (μm) 725 ± 50 μm
Doping Boron
Resistivity (ohm.cm) 0.001 - 1000
Polished One Side
Dummy is a grade of wafers, which is also referred as “test wafer” a grade lower than prime. Dummy CZ Si wafers are often doped with arsenic. Test grade wafers are high quality but have less stringent properties than prime grade wafers, usually failing for one or more of the Semiconductor Equipment and Materials International (SEMI) standards. Test grade wafers are often used in applications that require a large quantity of wafers for equipment and fabrication testing. Even if you are doing very high end R&D work it is much more cost effective to develop a process using test wafers and then do the final checks using Prime or Epi-Prime wafers.

Fused Silica Wafer, Size: 10mm x 20mm, 2-Side Polished, Thickness: 500 ± 00 μm,

Price range: $58.00 through $1,140.00
Select options This product has multiple variants. The options may be chosen on the product page
Fused Silica Wafer Size: 10 mm x 20 mm, 2-Side Polished, Thickness: 500 ± 00 μm Technical Properties: Quality Prime

Fused Silica Wafer, Size: 4”, 2-Side Polished, Thickness: 1000 ± 25 μm

Price range: $54.00 through $1,054.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/49 € 5 pieces/210 € 25 pieces/950 € Please contact us for quotes on larger quantities !!!

Fused Silica Wafer

Size: 4”, 2-Side Polished, Thickness: 1000 ± 25 μm

Technical Properties:

Quality Prime
Materials Fused Silica
Size(inch) 4”
Orientation
Coating
Thickness (μm) 1000 ± 25
Doping
Resistivity(ohm.cm)
Polished Double Side
Fused silica – also referred as fused quartz- is an amorphous phase of silica. Compared to borosilicate wafers, fused silica has no additives. Is almost chemically inactive. Has a very high thermal resistance. Has an improved optical transmission in deep UV (ultraviolet). Silica dust particles are deposited on the substrate first, solidification of these molten particles creates a pure fused phase on the surface with the help of flame hydrolysis.

Fused Silica Wafer, Size: 4”, 2-Side Polished, Thickness: 1000 ± 25 μm

Price range: $58.00 through $1,140.00
Select options This product has multiple variants. The options may be chosen on the product page
Fused Silica Wafer Size: 4”, 2-Side Polished, Thickness: 1000 ± 25 μm Technical Properties: Quality Prime Materials Fused Silica Size(inch)

Fused Silica Wafer, Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $71.00 through $1,498.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!! 

Fused Silica Wafer

Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials Fused Silica
Size (inch) 4”
Orientation  
Coating  
Thickness (μm) 500 ± 25
Doping  
Resistivity (ohm.cm)  
Polished Double Side
Fused silica – also referred as fused quartz- is an amorphous phase of silica. Compared to borosilicate wafers, fused silica has no additives. Is almost chemically inactive. Has a very high thermal resistance. Has an improved optical transmission in deep UV (ultraviolet). Silica dust particles are deposited on the substrate first, solidification of these molten particles creates a pure fused phase on the surface with the help of flame hydrolysis.

Fused Silica Wafer, Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $76.00 through $1,620.00
Select options This product has multiple variants. The options may be chosen on the product page
Fused Silica Wafer Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm Technical Properties: Quality Prime Materials Fused Silica Size

Fused Silica Wafer, Size: 6”, 2-Side Polished, Thickness: 700 ± 25 μm

Price range: $71.00 through $1,498.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!!

Fused Silica Wafer

Size: 6”, 2-Side Polished, Thickness: 700 ± 25 μm

Technical Properties:

Quality Prime
Materials Fused Silica
Size (inch) 6”
Orientation
Coating
Thickness (μm) 700 ± 25
Doping
Resistivity (ohm.cm)
Polished Double Side
Fused silica – also referred as fused quartz- is an amorphous phase of silica. Compared to borosilicate wafers, fused silica has no additives. Is almost chemically inactive. Has a very high thermal resistance. Has an improved optical transmission in deep UV (ultraviolet). Silica dust particles are deposited on the substrate first, solidification of these molten particles creates a pure fused phase on the surface with the help of flame hydrolysis.

Fused Silica Wafer, Size: 6”, 2-Side Polished, Thickness: 700 ± 25 μm

Price range: $76.00 through $1,620.00
Select options This product has multiple variants. The options may be chosen on the product page
Fused Silica Wafer Size: 6”, 2-Side Polished, Thickness: 700 ± 25 μm Technical Properties: Quality Prime Materials Fused Silica Size

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

Price range: $549.00 through $2,542.00
Select options This product has multiple variants. The options may be chosen on the product page
  1 piece/495  5 pieces/2290                          Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium (N type)
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

Price range: $594.00 through $2,748.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness (μm)

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, Testing Grade

Price range: $439.00 through $2,031.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/396  5 pieces/1830                            Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  Testing Grade
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, Testing Grade

Price range: $475.00 through $2,196.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 100 Technical Properties: Quality  Testing Grade Size (inch)  2” Thickness

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, EPI-Ready

Price range: $549.00 through $2,542.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/495  5 pieces/2290                            Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 111

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, EPI-Ready

Price range: $594.00 through $2,748.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness (μm)

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, Testing Grade

Price range: $439.00 through $2,031.00
Select options This product has multiple variants. The options may be chosen on the product page
  1 piece/396  5 pieces/1830                          Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, Testing Grade

Price range: $475.00 through $2,196.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 111 Technical Properties: Quality  Testing Grade Size (inch)  2” Thickness

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

Price range: $931.00 through $4,405.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/845  5 pieces/3995                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

Price range: $1,014.00 through $4,794.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  3” Thickness (μm)

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, Testing Grade

Price range: $623.00 through $2,611.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/565  5 pieces/2640                            Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, Testing Grade

Price range: $813.00 through $3,801.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Quality  Testing Grade Size (inch)  3” Thickness

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, EPI-Ready

Price range: $931.00 through $4,405.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/845  5 pieces/3995                            Please ask for amount of stock before placing an order on Wafer Products Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Quality  EPI-Ready
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, EPI-Ready

Price range: $1,014.00 through $4,794.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  3” Thickness (μm)

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, Testing Grade

Price range: $623.00 through $2,911.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/565  5 pieces/2640                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, Testing Grade

Price range: $813.00 through $3,801.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Quality  Testing Grade Size (inch)  3” Thickness

Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 100, EPI-Ready

Price range: $1,301.00 through $5,392.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/1180 € 5 pieces/4890 €                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 4”, Thickness: 1000± 25 μm, Orientation: 111

Technical Properties:

Quality  EPI-Ready
Size (inch)  4”
Thickness (μm)  1000± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  32.5±2
IF Length   18±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 100, EPI-Ready

Price range: $1,699.00 through $7,041.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 4”, Thickness: 1000± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  4” Thickness

Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 111, EPI-Ready

Price range: $1,699.00 through $7,041.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 4”, Thickness: 1000± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  4” Thickness

Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 111, EPI-Ready (No reviews yet)

Price range: $1,301.00 through $5,392.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/1180 € 5 pieces/4890 €                         Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 4”, Thickness: 1000± 25 μm, Orientation: 111

Technical Properties:

Quality  EPI-Ready
Size (inch)  4”
Thickness (μm)  1000± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  32.5±2
IF Length   18±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Gallium Arsenide (GaAs) Wafer, Size: 4”, Thickness: 300± 25 μm, Double Side Polished, EPI-ready

Price range: $219.00 through $4,418.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/198 € 5 pieces/935 € 25 pieces/3980 € Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 4”, Double Side Polished, Thickness: 300± 25 μm, EPI-ready

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  4”
Thickness (μm)  300± 25
Polished  Double Side
Dopant  Undoped
Orientation  100
Resistivity   1 E8
Mobility  4500
EPD  ≤5000
Growth method  VGF
OF Length  32.5±1
IF Length  18±1

Applications:

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafer, Size: 4”, Thickness: 300± 25 μm, Double Side Polished, EPI-ready

Price range: $237.00 through $4,776.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Arsenide (GaAs) Wafer Size: 4”, Double Side Polished, Thickness: 300± 25 μm, EPI-ready Technical Properties: Quality  GaAs Materials  GaAs

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, EPI-ready

Price range: $175.00 through $3,319.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/158  5 pieces/749  25 pieces/2990  Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Single Side
Dopant  Silicon (N type)
Orientation  (100)
Resistivity   (1.2—9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length   7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, EPI-ready

Price range: $189.00 through $3,588.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Arsenide (GaAs) Wafer Size: 2”, Thickness: 350±25 μm, Orientation: 100 Technical Properties: Quality  GaAs Materials  GaAs Size (inch)  2”

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Double Side Polished, EPI-ready

Price range: $175.00 through $3,319.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/158  5 pieces/749  25 pieces/2990  Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Double Side Polished

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Double Side
Dopant  None
Orientation  (100)
Resistivity   1 E8
Mobility  2000
EPD  ≤5000
Growth method  VGF
OF Length  17±1
IF Length   7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.