Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 3000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 200 ± 10 μm

Price range: $97.00 through $1,638.00
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Prime FZ-Si Wafer Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 200 ± 10 μm Technical Properties: Quality Prime

Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 5000 – 500000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 10 μm

Price range: $89.00 through $1,515.00
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1 piece/81 € 5 pieces/305 € 25 pieces/1365 € Please contact us for quotes on larger quantities !!! 

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 300 ± 10 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 300 ± 10
Doping Phosphor
Resistivity (ohm.cm) 5000 - 500000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.

Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 5000 – 500000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 10 μm

Price range: $97.00 through $1,638.00
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Prime FZ-Si Wafer Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 300 ± 10 μm Technical Properties: Quality Prime

Prime FZ-Si Wafer, Size: 4”, Orientation: (111), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 20 μm

Price range: $73.00 through $1,498.00
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1 piece/66 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 4”, Orientation: (111), None Doped, 2-Side Polished, Thickness: 300 ± 20 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (111)
Coating  
Thickness (μm) 300 ± 20
Doping  
Resistivity (ohm.cm) 10000 - 100000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.

Prime FZ-Si Wafer, Size: 4”, Orientation: (111), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 20 μm

Price range: $79.00 through $1,620.00
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Prime FZ-Si Wafer Size: 4”, Orientation: (111), None Doped, 2-Side Polished, Thickness: 300 ± 20 μm Technical Properties: Quality Prime

Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 150 nm

Price range: $63.00 through $1,240.00
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1 piece/58 € 5 pieces/245 € 25 pieces/1125 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size(inch) 3”
Orientation (100)
Coating 150 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 150 nm

Price range: $60.90 through $1,181.25
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Prime Si+Si3N4 Wafer Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 150 nm Technical Properties: Quality Prime

Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm

Price range: $72.00 through $1,488.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/66 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 3”
Orientation (100)
Coating 300 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm

Price range: $75.00 through $1,620.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+Si3N4 Wafer Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 300 nm Technical Properties: Quality Prime

Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

Price range: $101.00 through $2,178.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/92 € 5 pieces/420 € 25 pieces/1975 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 1000 nm
Thickness (μm) 380± 15
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

Price range: $110.00 through $2,370.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm Technical Properties: Quality Prime

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

Price range: $76.00 through $1,599.00
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1 piece/69 € 5 pieces/310 € 25 pieces/1450 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 450 nm
Thickness (μm) 525± 25
Doping Arsenic
Resistivity (ohm.cm) 0,001-0,005
Polished One Side
  Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

Price range: $83.00 through $1,740.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm Technical Properties: Quality Prime Materials Si+Si3N4 Size (inch)

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm

Price range: $60.00 through $1,240.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/55 € 5 pieces/245 € 25 pieces/1125 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 150 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm

Price range: $66.00 through $1,350.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 150 nm Technical Properties: Quality Prime

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

Price range: $70.00 through $1,433.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/280 € 25 pieces/1300 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 150 nm
Thickness (μm) 525± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

Price range: $77.00 through $1,560.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm Technical Properties: Quality Prime

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 70 nm

Price range: $68.00 through $1,350.00
Select options This product has multiple variants. The options may be chosen on the product page
V 1 piece/62 € 5 pieces/270 € 25 pieces/1225 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 70 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 70 nm
Thickness (μm) 525± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 70 nm

Price range: $78.00 through $1,544.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 70 nm Technical Properties: Quality Prime

Prime Si+SiO2 Wafer (dry), Size: 2”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

Price range: $60.00 through $772.00
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1 piece/54 € 5 pieces/175 € 25 pieces/690 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (dry)

Size: 2”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 2”
Orientation (100)
Coating 100 nm
Thickness (μm) 279 ± 20
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (dry), Size: 2”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

Price range: $69.00 through $870.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (dry) Size: 2”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

Prime Si+SiO2 Wafer (dry), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

Price range: $51.00 through $943.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/46 € 5 pieces/190 € 25 pieces/850 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 3”
Orientation (100)
Coating 100 nm
Thickness (μm) 380 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (dry), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

Price range: $57.75 through $1,071.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (dry) Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 100 nm

Price range: $71.00 through $1,071.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/225 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 100 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 4”
Orientation (100)
Coating 100 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 4”
Orientation (100)
Coating 200 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

Price range: $75.00 through $1,068.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (dry) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

Prime Si+SiO2 Wafer (dry), Size: 6”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm

Price range: $87.00 through $1,459.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/79 € 5 pieces/295 € 25 pieces/1315 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 6”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 6”
Orientation (100)
Coating 200 nm
Thickness (μm) 675 ± 15
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (dry), Size: 6”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm

Price range: $95.00 through $1,578.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (dry) Size: 6”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm

Prime Si+SiO2 Wafer (wet), Size: 2”, Orientation: (111), Boron Doped, Resistivity: 1 -20 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

Price range: $63.00 through $828.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/57 € 5 pieces/185 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 2”, Orientation: (111), Boron Doped, 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 2”
Orientation (111)
Coating 500 nm
Thickness (μm) 500 ± 25
Doping Boron
Resistivity (ohm.cm) 1-20
Polished Double  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 2”, Orientation: (111), Boron Doped, Resistivity: 1 -20 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

Price range: $68.00 through $888.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 2”, Orientation: (111), Boron Doped, 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 300 nm

Price range: $64.00 through $821.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/58 € 5 pieces/190 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 3”
Orientation (100)
Coating 300 nm
Thickness (μm) 380 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (111), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm

Price range: $67.00 through $960.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/61 € 5 pieces/205 € 25 pieces/865 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 3”, Orientation: (111), Boron Doped, 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 3”
Orientation (111)
Coating 500 nm
Thickness (μm) 581 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (111), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm

Price range: $73.00 through $966.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 3”, Orientation: (111), Boron Doped, 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0.001 – 0.01 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

Price range: $71.00 through $1,071.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/265 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 500 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 0.001 - 0.01
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0.001 – 0.01 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

Price range: $76.00 through $1,158.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

Price range: $78.00 through $1,237.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/71 € 5 pieces/255 € 25 pieces/1115 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 1500 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

Price range: $85.00 through $1,338.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 300 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm

Price range: $79.00 through $1,122.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 400 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 400 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 400 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 400 nm

Price range: $75.00 through $1,068.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 400 nm

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 2-Side Polished, Thickness: 500 ± 15 μm, Coating 300 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 500 ± 15 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 300 nm
Thickness (μm) 500 ± 15
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 2-Side Polished, Thickness: 500 ± 15 μm, Coating 300 nm

Price range: $79.00 through $1,122.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 500 ± 15 μm, Coating 300 nm

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (111), Phosphor Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1000 nm

Price range: $76.00 through $1,182.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/69 € 5 pieces/245 € 25 pieces/1065 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (111), Phosphor Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1000 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (111)
Coating 1000 nm
Thickness (μm) 525 ± 25
Doping Phosphor
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (111), Phosphor Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1000 nm

Price range: $76.00 through $1,278.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (111), Phosphor Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1000 nm

Quartz Wafer, (AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $93.00 through $1,626.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/84 € 5 pieces/325 € 25 pieces/1465 € Quartz Wafer, (AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm Please contact us for quotes on larger quantities !!!

Quartz Wafer

(AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 4”
Orientation (AT -Cut)
Coating  
Thickness (μm) 500 ± 25
Doping  
Resistivity (ohm.cm)  
Polished Double Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.

Quartz Wafer, (AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $100.00 through $1,758.00
Select options This product has multiple variants. The options may be chosen on the product page
Quartz Wafer (AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch)

Quartz Wafer, (ST-Cut), Size: 4”, 1-Side Polished, Thickness: 625 ± 25 μm

Price range: $93.00 through $1,626.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/84 € 5 pieces/325 € 25 pieces/1465 € Please contact us for quotes on larger quantities !!! 

Quartz Wafer

(ST-Cut), Size: 4”, 1-Side Polished, Thickness: 625 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 4”
Orientation (ST -Cut)
Coating
Thickness (μm) 625 ± 25
Doping
Resistivity (ohm.cm)
Polished One Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.

Quartz Wafer, (ST-Cut), Size: 4”, 1-Side Polished, Thickness: 625 ± 25 μm

Price range: $100.00 through $1,758.00
Select options This product has multiple variants. The options may be chosen on the product page
Quartz Wafer (ST-Cut), Size: 4”, 1-Side Polished, Thickness: 625 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch) 4”

Quartz Wafer, (X-Cut), Size: 2”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $57.00 through $710.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/52 € 5 pieces/160 € 25 pieces/640 € Please contact us for quotes on larger quantities !!! 

Quartz Wafer

(X-Cut), Size: 2”, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 2”
Orientation (X-Cut)
Coating
Thickness (μm) 500 ± 25
Doping
Resistivity (ohm.cm)
Polished Double Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.

Quartz Wafer, (X-Cut), Size: 2”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $66.15 through $806.40
Select options This product has multiple variants. The options may be chosen on the product page
Quartz Wafer (X-Cut), Size: 2”, 2-Side Polished, Thickness: 500 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch)

Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

Price range: $106.00 through $2,331.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/96 € 5 pieces/440 € 25 pieces/2100 €                       Please contact us for quotes on larger quantities !!! 

Quartz Wafer

(X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 4”
Orientation (X-Cut)
Coating  
Thickness (μm) 200 ± 25
Doping  
Resistivity (ohm.cm)  
Polished Double Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.

Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

Price range: $115.00 through $2,520.00
Select options This product has multiple variants. The options may be chosen on the product page
Quartz Wafer (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch)

Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 300 ± 25 μm

Price range: $93.00 through $1,626.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/84 € 5 pieces/325 € 25 pieces/1465 €                         Please contact us for quotes on larger quantities !!! 

Quartz Wafer

(X-Cut), Size: 4”, 2-Side Polished, Thickness: 300 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 4”
Orientation (X-Cut)
Coating  
Thickness (μm) 300 ± 25
Doping  
Resistivity (ohm.cm)  
Polished Double Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.

Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 300 ± 25 μm

Price range: $100.00 through $1,758.00
Select options This product has multiple variants. The options may be chosen on the product page
Quartz Wafer (X-Cut), Size: 4”, 2-Side Polished, Thickness: 300 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch) 4” Orientation

Silicon Carbide Wafer (SiC-4H) – 4H , Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

Price range: $297.00 through $1,302.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality  Mechanical Grade Size (inch)  2”

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Production Grade, 4H Area: 1

Price range: $623.00 through $2,734.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/565 € 5 pieces/2480 €                          Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 1

Technical Properties:

Quality  Production Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤0.3
4H area  1
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤10
Bow  ≤10
Warp  ≤25
OF Length  16±2
IF Length  8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Production Grade, 4H Area: 1

Price range: $813.00 through $3,571.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 1 Technical Properties: Quality  Production Grade Size (inch)  2”