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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 2000 – 4000 (ohm.cm), 1-Side Polished, Thickness: 300 ± 10 μm

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Price range: $71.00 through $1,071.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/225 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 300 ± 10 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 300 ± 10
Doping Boron
Resistivity (ohm.cm) 2000 - 4000
Polished One Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 2000 – 4000 (ohm.cm), 1-Side Polished, Thickness: 300 ± 10 μm

,
Price range: $76.00 through $1,158.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime FZ-Si Wafer Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 300 ± 10 μm Technical Properties: Quality Prime
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), None Doped, Resistivity: 1000 – 10000 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm

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Price range: $87.00 through $1,459.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/79 € 5 pieces/295 € 25 pieces/1315 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), None Doped, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 525 ± 25
Doping
Resistivity (ohm.cm) 1000 - 10000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 3000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 200 ± 10 μm

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Price range: $89.00 through $1,515.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/81 € 5 pieces/305 € 25 pieces/1365 € Please contact us for quotes on larger quantities !!! 

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 200 ± 10 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 200 ± 10
Doping Phosphor
Resistivity (ohm.cm) 3000 - 100000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 3000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 200 ± 10 μm

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Price range: $97.00 through $1,638.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime FZ-Si Wafer Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 200 ± 10 μm Technical Properties: Quality Prime
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 5000 – 500000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 10 μm

, ,
Price range: $89.00 through $1,515.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/81 € 5 pieces/305 € 25 pieces/1365 € Please contact us for quotes on larger quantities !!! 

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 300 ± 10 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 300 ± 10
Doping Phosphor
Resistivity (ohm.cm) 5000 - 500000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime FZ-Si Wafer, Size: 4”, Orientation: (111), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 20 μm

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Price range: $73.00 through $1,498.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/66 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 4”, Orientation: (111), None Doped, 2-Side Polished, Thickness: 300 ± 20 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (111)
Coating  
Thickness (μm) 300 ± 20
Doping  
Resistivity (ohm.cm) 10000 - 100000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.