Home Silicon Wafers & Semiconductor Wafers INDIUM PHOSPHIDE (INP) WAFERS

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2D Materials 3
3D Printer Materials 106
- Aluminum Based Alloy Powder 17
- Cobalt Alloy Powder 4
- Copper Alloy Powder 7
- High Entropy Alloy Powder 6
- High Temperature Alloy Powder 15
- IMC(Intermetallic Compound Powder) 6
- Iron Based Alloy Powder 20
- MIM Powder 0
- Refractory Metal Powder 3
- SPHERICAL NICKEL BASE ALLOY MICRON POWDER 17
- Titanium Based Alloy Powder 11
AAO templates 1
Activated carbon fibers 6
Activated carbons 1
Al 1
ALUMINUM SILICON COPPER SPUTTERING TARGETS 4
- 1 2
- 2 2
ALUMINUM SILICON SPUTTERING TARGETS 9
- 1 2
- 2 2
- 3 2
- 4 2
ANTIMONY SPUTTERING TARGETS 3
- 1 0
- 2 3
ANTIMONY TELLURIDE SPUTTERING TARGETS 9
- 1 2
- 2 3
- 22 0
- 3 2
- 4 2
Artificial Biological Solutions 6
BARIUM FLUORIDE SPUTTERING TARGETS 12
- 1 0
- 2 2
- 3 2
- 4 2
- 5 2
- 6 2
- 8 2
BARIUM SPUTTERING TARGETS 8
- 1 2
- 2 2
- 3 2
- 4 2
BARIUM STRONTIUM TITANATE SPUTTERING TARGETS 10
- 2 1
- 3 2
- 4 2
- 6 2
- 8 2
BARIUM TITANATE SPUTTERING TARGETS 18
- 1 3
- 2 3
- 3 4
- 4 3
- 5 2
- 6 2
- 8 1
BARIUM ZIRCONATE SPUTTERING TARGETS 8
- 1 2
- 2 2
- 3 1
- 4 2
- 6 1
BATTERY EQUIPMENT 174
- 18650 Cylinder Cell Assembly Materials 3
- Battery Lab Machine 7
- Coin Cell Materials 21
- FOILS FOR BATTERIES 24
  - Aluminum Foil 6
  - Copper Foil 2
  - Graphite Foils 7
  - Lithium Foil 1
  - Nickel Foils 2
  - Platinum Foils 6
- LITHIUM BATTERY MATERIALS 58
  - ANODE MATERIALS 23
  - Cathode Materials 23
  - OTHER MATERIALS 3
  - Pouch Cell Materials 9
- Other Battery Lab Equipments 2
- Porous Metal Foam Materials 5
- RAW MATERIALS FOR BATTERY APPLICATION 30
- Separators For Batteries 3
BISMUTH FERRITE (INDIUM) SPUTTERING TARGETS 3
- 1 1
- 2 1
- 3 1
BISMUTH FERRITE SPUTTERING TARGETS 17
- 1 2
- 2 2
- 3 2
- 4 2
- 5 2
- 6 2
- 7 3
- 8 2
BISMUTH OXIDE SPUTTERING TARGETS 9
- 1 2
- 2 3
- 3 3
- 4 1
BISMUTH SPUTTERING TARGETS 9
- 1 2
- 2 2
- 3 2
- 4 3
BISMUTH TELLURIDE SPUTTERING TARGETS 10
- 1 2
- 2 2
- 3 1
- 4 2
- 6 1
- 8 1
Borides 9
BORON CARBIDE SPUTTERING TARGETS 11
- 1 1
- 2 1
- 3 2
- 4 3
- 6 2
- 8 2
BORON NITRIDE SPUTTERING TARGETS 12
- 1 2
- 2 2
- 3 2
- 4 2
- 6 2
- 8 1
BORON SPUTTERING TARGETS 10
- 2 5
- 3 3
- 4 2
CALCIUM MANGANATE SPUTTERING TARGETS 9
- 1 2
- 2 2
- 3 3
- 4 2
Carbides 2
CARBON (GRAPHITE) SPUTTERING TARGETS 7
- 1 1
- 2 2
- 3 2
- 4 2
CARBON (PYROLYTIC GRAPHITE) SPUTTERING TARGETS 11
- 1 2
- 2 3
- 3 3
- 4 3
CARBON NANOTUBES 223
- CARBON NANOTUBE FIBERS 16
  - CARBON NANOTUBE FIBERS 12
  - Composite Wires of Carbon Nanotubes 3
- Carbon Nanotube Nanoribbon 4
- Carbon Nanotube Sponges 8
- CNT DISPERSIONS 20
  - All Carbon Nanotube Dispersions 9
- Double-Walled CNTs 6
  - DWCNT, >65% 2
  - DWCNT, >65%, -COOH 2
  - DWCNT, >65%, -OH 2
- Graphitized Multi-Walled CNTs 16
- Multi-Walled CNTs 33
  - Aligned MWCNT, >96% 2
  - Carbon NanoFibers 0
  - Industrial MWCNTs 0
  - MWCNT, >90%, -COOH 1
  - MWCNT, >92% 4
  - MWCNT, >92%, -COOH 4
  - MWCNT, >92%, -OH 5
  - MWCNT, >95% 1
  - MWCNT, >96% 4
  - MWCNT, >96%, -COOH 6
  - MWCNT, >96%, -Ni 1
  - MWCNT, >96%, -OH 5
  - MWCNT, >99%, -Ni 0
- Short Length Multi-Walled CNTs 0
- Single-Walled CNTs 12
  - SWCNT, >65% 1
  - SWCNT, >65%, -COOH 2
  - SWCNT, >65%, -OH 1
  - SWCNT, >92% 2
  - SWCNT, >92%, -COOH 2
  - SWCNT, >92%, -OH 2
  - SWCNT, >95% 1
  - SWCNT, >96% 1
CARBON SPUTTERING TARGETS 4
- 1 1
- 2 1
- 3 1
Cellulose 3
Cerium 23
CERIUM OXIDE SPUTTERING TARGETS 21
- 1 3
- 2 3
- 3 3
- 4 3
- 5 2
- 6 2
- 7 2
- 8 2
Chitosan 2
Chitosans 15
CHROMIUM OXIDE SPUTTERING TARGETS 11
- 1 2
- 2 3
- 3 3
- 4 3
CHROMIUM SPUTTERING TARGETS 6
- 3 2
- 4 2
- 6 1
- 8 1
COATINGS 3
- Dry Film Lubricants 3
COBALT IRON BORON SPUTTERING TARGETS 6
- 1 0
- 2 3
- 3 2
COBALT SPUTTERING TARGETS 15
- 1 2
- 2 4
- 3 3
- 4 2
- 6 2
- 8 2
Conductive Adhesive Paste 7
COPPER SPUTTERING TARGETS 24
- 1 4
- 2 4
- 3 3
- 4 4
- 5 1
- 6 2
- 7 2
- 8 4
Cosmetic ingredients 17
Cs 3
Cyclodextrins 4
Dendrimers 5
Deposition Materials 109
Dicalcium silicate 0
Discounted Products 12
DISPERSIONS 99
- Borophene Dispersions 1
- Carbon Nanotube Dispersions 38
- GRAPHENE DISPERSIONS 7
- METAL AND OXIDE DISPERSIONS 53
- Silicene Dispersions 1
Dysprosium 23
Erbium 28
Europium 34
Evaporation Materials 71
Foams 2
Fullerene 37
- Fullerene-C60 5
- Fullerene-C70 6
- Polyhydroxylated Fullerene (Fullerenols) 10
Gadolinium 30
GALLIUM Arsenide (GASB) WAFERS 2
Graphdiyne 5
Graphene 93
Graphites 2
Hemicellulose 4
High Purity Inorganic Chemicals 511
High Purity Inorganics 54
High Purity Metal Sputtering Targets 52
Holmium 27
Homogeneous Catalyst 53
Hydrotalcite 2
Inorganic Biomaterials 15
Intermetallics 2
Lab Equipment 14
- Dispersion Equipment 6
  - High Energy Ball Mill 1
  - Homogenizer 2
  - Three Roll Mill 2
- Hydrothermal Synthesis Autoclave Reactors 7
- Roll to Roll PE-CVD 1
Lanthanum 28
LEAD ZIRCONIUM TITANATE 0
LK-99 Raw Materials 3
Lutetium 24
Mesophase 4
Metal Alkoxides 31
Metal beta diketonates ACAC 49
Metal beta diketonates Chiral 10
Metal beta diketonates FOD 15
Metal beta diketonates HFAC 29
Metal beta diketonates TFAC 14
Metal beta diketonates TMHD 36
Metal beta diketonates TTFA 2
microparticles 114
- Elemental micron powder 113
Miscellaneous 11
Molecular sieves 23
MOLYBDENUM SPUTTERING TARGET 11
- 1 2
- 2 2
- 3 2
- 4 2
- 6 2
- 8 1
MXene and MAXene 74
Nanoparticales 0
Nanoparticles 172
- Compounds nanoparticles 34
- Element & Alloys Nanoparticles 53
  - Aluminum Nanoparticles 0
  - Bismuth Nanoparticles 0
  - Boron Nanoparticles 0
  - Carbon Nanoparticles 0
  - Chromium Nanoparticles 0
  - Cobalt Nanoparticles 0
  - Copper Nanoparticles 0
  - Fe-Si Nanoparticles 0
  - Gold Nanoparticles 0
  - Indium Nanoparticles 0
  - Iron Nanoparticles 0
  - Molybdenum Nanoparticles 0
  - Nickel Nanoparticles 0
  - Platinum Nanoparticles 2
  - Selenium Nanoparticles 1
  - Silicon Nanoparticles 6
  - Silver Nanoparticles 16
  - Sulphur Nanoparticles 1
  - Tantalum Nanoparticles 1
  - Tin Nanoparticles 2
  - Titanium Nanoparticles 3
  - Tungsten Nanoparticles 3
  - Zinc Nanoparticles 4
- Magnetic Nanoparticles 0
  - Magnetic Powders of Fe2O3 0
  - Magnetic Powders of Fe3O4 0
- multi-elements oxide nanoparticles 17
- Nanocellulose 8
- Single Metal Oxide Nanoparticles 54
Nanoparticles & Nanopowders 466
- Metal and Non-metal Elements 94
- Oxides and Compounds 106
Nanotubes & Graphenes 69
Nitrides 6
Organic 3
Organic salts 3
PAMAM 0
Polyamino acids 3
polymers 17
Potassium 0
PZT SPUTTERING TARGETS 0
Quantum Dots 61
- Cadmium Selenide Quantum Dots (CdSe/ZnS) 13
- Carbon Quantum Dots (CQD) 17
- Graphene Quantum Dots (GQD) 1
- Indium Phosphide Quantum Dots (InP/ZnS QD) 11
- Lead Sulfide Quantum Dots (PbS QD) 8
- Perovskite Quantum Dots 3
- QLED Quantum Dots 6
- Zinc Selenide Quantum Dots (ZnSe/ZnS QD) 2
Rare Earth Materials 187
- RARE EARTH COMPOUND POWDER 7
- RARE EARTH ELEMENT POWDER 16
  - Cerium (Ce) Powder 1
  - Dysprosium (Dy) Powder 1
  - Erbium (Er) Powder 1
  - EUROPIUM (EU) POWDER 1
  - Gadolinium (Gd) Powder 1
  - Holmium (Ho) Powder 1
  - Lanthanum (La) Powder 1
  - Neodymium (Nd) Powder 1
  - Praseodymium (Pr) Powder 1
  - Samarium (Sm) Powder 1
  - Scandium (Sc) Powder 2
  - Terbium (Tb) Powder 1
  - Thulium (Tm) Powder 1
  - Yttrium (Y) Powder 2
- RARE EARTH OXIDE POWDER 29
- Rare Earth Sputtering Targets 115
Screen Printed Electrode 2
SHAPE MEMORY MATERIALS 23
- SHAPE MEMORY ALLOYS 8
  - Shape Memory Alloy Sheets 3
  - SHAPE MEMORY ALLOY WIRES 5
- SHAPE MEMORY POLYMERS 15
Silica aerogel 2
Silicon Wafers & Semiconductor Wafers 275
- 2" 8
- 3" 6
- 4" 16
- 6" 6
- 8" 3
- Borosilicate Wafer 11
  - 2" 0
  - 3" 2
  - 4" 5
  - 6" 3
  - 8" 1
- CZ-Si Wafer 23
  - 2" 7
  - 3" 4
  - 4" 7
  - 6" 3
  - 8" 2
- Fused Silica Wafers 7
  - 2" 1
  - 4" 4
  - 6" 2
- FZ-Si Wafers 10
  - 2" 2
  - 3" 1
  - 4" 7
- GAAS WAFER 14
  - 2" 8
  - 4" 6
- GALLIUM ANTIMONIDE (GASB) WAFERS 20
  - 2" 8
  - 3" 8
  - 4" 4
- Gallium Arsenide (GaAs) Wafers 6
  - 2" 0
  - 4" 0
  - 6" 0
- INDIUM ARSENIDE (INAS) WAFERS 2
  - 2" 1
  - 3" 1
  - 4" 0
- INDIUM PHOSPHIDE (INP) WAFERS 29
  - 2" 9
  - 3" 12
  - 4" 8
- Quartz Wafer 9
  - 2" 1
  - 4" 8
- SI + SINX WAFERS 7
  - 3" 2
  - 4" 5
- SI + SIO2 WAFERS 24
  - 2" 3
  - 3" 5
  - 4" 14
  - 6" 2
- Si+Si3N4 Wafer 5
  - 2" 0
  - 3" 1
  - 4" 4
  - 6" 0
- SILICON CARBIDE WAFER ( SIC-4H ) - 4H 13
  - 2" 5
  - 3" 4
  - 4" 4
- SILICON CARBIDE WAFER ( SIC-6H ) - 6H 2
  - 2" 2
- SILICON ON INSULATOR (SOI) WAFERS 9
  - 4" 2
  - 6" 4
  - 8" 3
- Wafer Shippers 5
Silk extracts 1
Sodium phytate 0
Spherical materials 14
Sputtering Targets 2432
- Sputtering Targets Names A - C 298
  - Aluminum Nitride Sputtering Targets 22
    - 1" 6
    - 2" 6
    - 3" 6
    - 4" 4
  - Aluminum Oxide Sputtering Targets 24
    - 1" 4
    - 2" 5
    - 3" 4
    - 4" 4
    - 6" 4
    - 8" 3
  - Aluminum Sputtering Targets 25
    - 1" 4
    - 2" 4
    - 3" 4
    - 4" 4
    - 5" 1
    - 6" 4
    - 8" 4
- SPUTTERING TARGETS NAMES D - M 337
  - ERBIUM OXIDE SPUTTERING TARGETS 8
    - 1 2
    - 2 2
    - 3 2
    - 4 2
  - Erbium Oxide Sputtering Targets 7
  - GERMANIUM SPUTTERING TARGETS 11
    - 1 1
    - 2 2
    - 3 4
    - 4 2
  - INDIUM OXIDE SPUTTERING TARGETS 9
    - 1 2
    - 2 2
    - 3 2
    - 4 2
  - INDIUM SPUTTERING TARGETS 4
    - 1 4
  - INDIUM TIN OXIDE (ITO) SPUTTERING TARGETS 11
    - 1 3
    - 2 1
    - 3 2
    - 4 2
    - 6 2
    - 8 1
  - INDIUM ZINC OXIDE SPUTTERING TARGETS 9
    - 1 2
    - 2 3
    - 3 2
    - 4 2
  - IRON OXIDE SPUTTERING TARGETS 16
    - 1 3
    - 2 3
    - 3 3
    - 4 2
    - 5 1
    - 6 2
    - 7 2
  - IRON SPUTTERING TARGETS 14
    - 1 2
    - 2 6
    - 3 3
    - 4 3
  - LANTHANUM ALUMINATE (INDIUM) SPUTTERING TARGETS 2
    - 1 1
    - 2 1
  - LANTHANUM CALCIUM MANGANATE (LA0.7CA0.3MNO3) 16
    - 1 2
    - 2 2
    - 3 2
    - 4 2
    - 5 2
    - 6 2
    - 7 2
    - 8 2
  - LANTHANUM MANGANATE SPUTTERING TARGETS 17
    - 1 3
    - 2 2
    - 3 2
    - 4 2
    - 5 2
    - 6 2
    - 7 2
    - 8 2
  - Lanthanum Nickel Oxide Sputtering Targets 18
  - Lanthanum Strontium Manganate (La0.9Sr0.1MnO3) 6
  - Lanthanum Strontium Manganate(La0.7Sr0.3MnO3) 9
  - Lanthanum Titanate Sputtering Targets 16
  - LEAD ZIRCONIUM TITANATE, PZT SPUTTERING TARGETS 16
    - 1 2
    - 2 2
    - 3 2
    - 4 2
    - 5 2
    - 6 2
    - 7 2
    - 8 2
  - LITHIUM COBALT OXIDE SPUTTERING TARGETS 10
    - 1 1
    - 2 3
    - 3 3
    - 4 3
  - LITHIUM NICKEL COBALT OXIDE (LINI(1-X)COXO2) 2
    - 2 2
  - LITHIUM NIOBATE SPUTTERING TARGETS 7
    - 1 1
    - 2 2
    - 3 2
    - 4 2
  - LITHIUM PHOSPHATE SPUTTERING TARGETS 18
    - 1 3
    - 2 3
    - 3 2
    - 4 3
    - 5 1
    - 6 2
    - 7 2
    - 8 1
  - LITHIUM TITANATE SPUTTERING TARGETS 8
    - 1 2
    - 2 2
    - 3 3
    - 4 1
  - MAGNESIUM FLUORIDE SPUTTERING TARGETS 10
    - 1 2
    - 2 2
    - 3 2
    - 4 2
    - 6 1
    - 8 1
  - MAGNESIUM OXIDE SPUTTERING TARGETS 22
    - 1 3
    - 2 5
    - 3 2
    - 4 3
    - 5 2
    - 6 2
    - 7 2
    - 8 2
  - MAGNESIUM SPUTTERING TARGETS 22
    - 1 4
    - 2 4
    - 3 4
    - 4 4
    - 5 1
    - 6 2
    - 8 2
  - MANGANESE SPUTTERING TARGETS 11
    - 1 3
    - 2 2
    - 3 3
    - 4 2
    - 6 1
  - MOLYBDENUM DISILICIDE SPUTTERING TARGETS 9
    - 1 2
    - 2 2
    - 3 2
    - 4 3
  - MOLYBDENUM DISULFIDE SPUTTERING TARGETS 15
    - 1 3
    - 2 3
    - 3 3
    - 4 2
    - 6 2
    - 8 1
  - MOLYBDENUM OXIDE SPUTTERING TARGETS 9
    - 1 2
    - 2 2
    - 3 3
    - 4 2
- SPUTTERING TARGETS NAMES N - S 244
  - 4. 0
  - NICKEL CHROMIUM SPUTTERING TARGETS 13
    - 1 2
    - 2 2
    - 3 4
    - 4 2
    - 6 2
  - NICKEL IRON SPUTTERING TARGETS 8
    - 1 2
    - 2 3
    - 3 2
    - 4 1
  - NICKEL OXIDE SPUTTERING TARGETS 11
    - 1 4
    - 2 7
    - 3 0
  - NICKEL SPUTTERING TARGETS 34
    - 1 3
    - 2 6
    - 3 6
    - 4 6
    - 5 1
    - 6 6
    - 8 6
  - NICKEL VANADIUM SPUTTERING TARGETS 10
    - 1 2
    - 2 2
    - 3 2
    - 4 2
    - 6 1
    - 8 1
  - NIOBIUM OXIDE SPUTTERING TARGETS 11
    - 1 2
    - 2 3
    - 3 2
    - 4 3
    - 8 1
  - NIOBIUM SPUTTERING TARGETS 8
    - 1 2
    - 2 2
    - 3 2
    - 4 2
  - PERMALLOY SPUTTERING TARGETS 6
    - 2 2
    - 3 2
    - 4 2
  - Praseodymium Calcium Manganate Sputtering Targets 19
    - 1 2
    - 2 4
    - 3 2
    - 4 2
  - PRASEODYMIUM SPUTTERING TARGETS 12
    - 1 2
    - 2 2
    - 3 2
    - 4 3
    - 6 2
    - 8 2
  - Purity: 99.9% 0
  - SELENIUM SPUTTERING TARGETS 9
    - 1 2
    - 2 3
    - 3 2
    - 4 2
  - SILICON (SI (N-TYPE)) SPUTTERING TARGET 13
    - 1 1
    - 2 2
    - 3 2
    - 4 2
    - 5 2
    - 6 2
    - 8 2
  - SILICON (SI (P-TYPE)) SPUTTERING TARGETS 16
    - 1 3
    - 2 2
    - 3 3
    - 4 3
    - 6 2
    - 8 2
  - SILICON (SI) (UNDOPED) SPUTTERING TARGETS 7
    - 1 2
    - 2 2
    - 3 2
    - 4 1
  - SILICON CARBIDE SPUTTERING TARGETS 12
    - 1 2
    - 2 3
    - 3 3
    - 4 3
  - SILICON DIOXIDE (FUSED QUARTZ) SPUTTERING TARGETS 16
    - 1 2
    - 2 3
    - 3 3
    - 4 3
    - 5 1
    - 6 2
    - 8 1
  - SILICON NITRIDE SPUTTERING TARGETS 12
    - 1 4
    - 2 5
    - 3 3
  - SILVER SPUTTERING TARGETS 11
    - 1 2
    - 2 3
    - 3 2
    - 4 2
    - 6 1
    - 8 1
  - Size: 1'' 0
  - STRONTIUM TITANATE SPUTTERING TARGETS 17
    - 1 3
    - 2 3
    - 3 2
    - 4 2
    - 5 2
    - 6 2
    - 7 2
    - 8 1
  - Thickness: 0.250'' 0
- SPUTTERING TARGETS NAMES T - Z 363
  - TANTALUM OXIDE SPUTTERING TARGETS 10
    - 2 4
    - 3 4
    - 4 1
  - TANTALUM SPUTTERING TARGETS 12
    - 1 2
    - 2 3
    - 3 2
    - 4 2
    - 6 1
    - 8 2
  - TIN OXIDE SPUTTERING TARGETS 11
    - 1 2
    - 2 3
    - 3 3
    - 4 3
  - TIN SPUTTERING TARGETS 17
    - 1 4
    - 2 4
    - 3 3
    - 4 2
    - 6 2
    - 8 2
  - TITANIUM BORIDE SPUTTERING TARGETS 8
    - 1 1
    - 2 3
    - 3 2
    - 4 2
  - TITANIUM CARBIDE SPUTTERING TARGETS 7
    - 1 1
    - 2 2
    - 3 2
    - 4 2
  - TITANIUM DIOXIDE SPUTTERING TARGETS 29
    - 1 6
    - 2 7
    - 3 6
    - 4 6
    - 6 2
    - 8 1
  - TITANIUM NITRIDE SPUTTERING TARGETS 11
    - 1 2
    - 2 4
    - 3 2
    - 4 3
  - TUNGSTEN DISULFIDE SPUTTERING TARGETS 9
    - 2 2
    - 3 2
    - 4 2
    - 5 2
    - 6 1
    - 8 1
  - TUNGSTEN OXIDE SPUTTERING TARGETS 11
    - 1 2
    - 2 3
    - 3 3
    - 4 3
  - TUNGSTEN SPUTTERING TARGETS 13
    - 1 2
    - 2 3
    - 3 3
    - 4 2
    - 6 1
    - 8 2
  - TUNGSTEN TITANIUM SPUTTERING TARGETS 12
    - 1 3
    - 2 2
    - 3 2
    - 4 2
    - 6 2
    - 8 1
  - VANADIUM OXIDE SPUTTERING TARGETS 14
    - 1 1
    - 2 4
    - 3 3
    - 4 3
    - 6 1
    - 8 1
  - VANADIUM SPUTTERING TARGETS 9
    - 1 2
    - 2 2
    - 3 2
    - 4 2
    - 8 1
  - YTTERBIUM OXIDE SPUTTERING TARGETS 7
    - 1 2
    - 2 3
    - 3 2
  - YTTRIUM FERRITE SPUTTERING TARGETS 6
    - 1 2
    - 2 3
    - 3 1
  - YTTRIUM SPUTTERING TARGETS 8
    - 1 2
    - 2 2
    - 3 2
    - 4 2
  - ZINC OXIDE SPUTTERING TARGETS 17
    - 1 5
    - 2 6
    - 3 5
    - 4 1
  - ZINC OXIDE WITH ALUMINA SPUTTERING TARGETS 14
    - 1 1
    - 2 4
    - 3 4
    - 4 3
    - 6 1
    - 8 1
  - ZINC SPUTTERING TARGETS 20
    - 1 4
    - 2 6
    - 3 4
    - 4 4
    - 6 1
    - 8 1
  - ZINC SULFIDE SPUTTERING TARGETS 10
    - 1 2
    - 2 3
    - 3 3
    - 4 2
Sulfides 2
Super absorbent polymers 7
Tea extracts 1
Titanate 2
Tricalcium silicate 3
Whiskers 9

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

INDIUM PHOSPHIDE (INP) WAFERS, 2", Silicon Wafers & Semiconductor Wafers

$383.00 – $1,820.00Price range: $383.00 through $1,820.00

Select options This product has multiple variants. The options may be chosen on the product page

1 piece/345 € 5 pieces/1640 € Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Size (inch)	2”
Thickness (μm)	350± 25
Dopant	Sulphur (N type)
Polished	Single Side
Mobility	（1.5-3.5）E3
Orientation	100
EPD	≤5000
Growth method	VGF
OF Length	16±2
IF Length	8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.

Indium phosphide (InP) is used in modulators.
Indium phosphide (InP) is used in photo-detectors.
Indium phosphide (InP) is used in LEDs.
Indium phosphide (InP) is used in fiber communications components.
Indium phosphide (InP) is used in semiconductor optical amplifiers.

Size (inch)	3”
Thickness (μm)	600± 25
Dopant	Sulphur (N type)
Polished	Single Side
Mobility	（1.5-3.5）E3
Orientation	100
EPD	≤5000
Growth method	VGF
OF Length	22±2
IF Length	11±1

Size (inch)	4”
Thickness (μm)	625± 25
Dopant	Sulphur (N type)
Polished	Single Side
Mobility	（1.5-3.5）E3
Orientation	100
EPD	≤5000
Growth method	VGF
OF Length	32.5±2
IF Length	18±1

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Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 111

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 111

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 100

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600± 25 μm, Orientation: 100

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 100

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600± 25 μm, Orientation: 111

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 111

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 111

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 4'', Thickness: 625± 25 μm, Orientation: 100

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 4'', Thickness: 625± 25 μm, Orientation: 100

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 4'', Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Fields of Application for Indium Phosphide (InP)

Indium Phosphide (InP) Wafers

Size: 4'', Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Fields of Application for Indium Phosphide (InP)

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