| pcs | 1 Piece, 5 Piece |
|---|
Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready
$1,420.00 – $6,638.00
1 piece/1280 €
5 pieces/5980 €
Please contact us for quotes on larger quantities !!!
Indium Phosphide (InP) Wafers
Size: 4”, Thickness: 625± 25 μm, Orientation: 111
Technical Properties:
| Size (inch) | 4” |
| Thickness (μm) | 625± 25 |
| Dopant | Sulphur (N type) |
| Polished | Single Side |
| Mobility | （1.5-3.5）E3 |
| Orientation | 111 |
| EPD | ≤5000 |
| Growth method | VGF |
| OF Length | 32.5±2 |
| IF Length | 18±1 |
Fields of Application for Indium Phosphide (InP)
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
Indium phosphide (InP) has started to be developed at the beginning of 1980s.
Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct
bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP)
is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form.
Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors.
InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide.
Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors.
InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
- Indium phosphide (InP) is used in modulators.
- Indium phosphide (InP) is used in photo-detectors.
- Indium phosphide (InP) is used in LEDs.
- Indium phosphide (InP) is used in fiber communications components.
- Indium phosphide (InP) is used in semiconductor optical amplifiers.
Additional information
