Indium Phosphide (InP) Wafers
Size: 4”, Thickness: 625± 25 μm, Orientation: 111
Technical Properties:
Size (inch)
4”
Thickness (μm)
625± 25
Dopant
Sulphur (N type)
Polished
Single Side
Mobility
（1.5-3.5）E3
Orientation
111
EPD
≤5000
Growth method
VGF
OF Length
32.5±2
IF Length
18±1
Fields of Application for Indium Phosphide (InP)
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
Indium phosphide (InP) has started to be developed at the beginning of 1980s.
Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct
bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP)
is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form.
Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors.
InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide.
Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors.
InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
Indium phosphide (InP) is used in modulators.
Indium phosphide (InP) is used in photo-detectors.
Indium phosphide (InP) is used in LEDs.
Indium phosphide (InP) is used in fiber communications components.
Indium phosphide (InP) is used in semiconductor optical amplifiers.
