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Polyhydroxylated Fullerene (Fullerenols)/ C60, (-OH) Functionalized, Dispersed in Water, 1000 ppm Dry powder

Price range: $245.00 through $2,680.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity, anti-HIV drugs, anti-cancer drugs, chemotherapy drugs, cosmetics additives and scientific research. 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.
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Polyhydroxylated Fullerene (Fullerenols)/ C60, (-OH) Functionalized, Dispersed in Water, 500 ppm Dry powder

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Price range: $218.00 through $2,664.00
Select options This product has multiple variants. The options may be chosen on the product page
25 ml/195 € 100 ml/450 € 500 ml/1580 € 1000 ml/2380 € Please contact us for quotes on larger quantities.

Polyhydroxylated Fullerene (Fullerenols)/ C60

(-OH) Functionalized, Dispersed in Water, 500 ppm Dry powder

The starting material is >98% purity C60 fullerenes. C60 bearing over 40 hydroxyl groups that have higher water solubility (>50 mg/mL). These exist as monodisperse nanoparticles in water, and have a valiant polishing effect. They exhibit superior antioxidant and anti-inflammatory properties.

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity, anti-HIV drugs, anti-cancer drugs, chemotherapy drugs, cosmetics additives and scientific research. 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.  
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Scandium (Sc) Micron Powder Purity: 99.9 %, Particle Size: 200 mesh

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Price range: $96.00 through $2,660.00
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1 gram/86 € 5 grams/290 € 25 grams/864 € 100 grams/2360 €      
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Carbon Nanotubes Doped with 32 wt% Graphene Nanopowder/Nanoparticles

Price range: $41.00 through $2,633.00
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Applications of Carbon Nanotubes Doped with 32 wt% Graphene

Carbon NanoTubes doped with Graphene nanoplatelets show effective improvements in electrical and mechanical properties. Such improvements include; hardness, tensile strength, specific strenght, and elastic  modulus. These improvements result in wide usage of these materials for different applications. Some of these applications include; drug delivery, biosensors, CNT composites, catalysis, nanoprobes, hydrogen storage, lithium batteries, gas-discharge tubes, flat panel displays, supercapacitors, transistors, solar cells, photoluminescence, templates.
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Short Single Walled Carbon Nanotubes, Purity: > 92%

Price range: $170.00 through $2,630.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

There are numerous possible uses for single-walled carbon nanotubes in various industries. These applications span a variety of fields, such as energy, chemistry, electronics, mechanics, and medicine. One can use it for medication delivery, two for biosensors, three for CNT composites, and four for catalysis.

5-hydrogen storage, 6-nanoprobes 7-lithium power cells 8 tubes for gas discharge, nine flat-panel monitors Ten supercapacitors and eleven transistors Photoluminescence, 12, solar cells, 13, and 14 templates  
Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.125''
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Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.125”

$2,628.00
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Product 

 Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.125''

CAS No.
 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~233.19 g/mol

Melting Point

 ~1625 °C

Boiling Point

N/A

Density

  ~6.02 g/cm³

Product Codes

NCZ-2454K
Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250''
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Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$2,628.00
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Product 

 Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250''

CAS No.
 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~233.19 g/mol

Melting Point

 ~1625 °C

Boiling Point

N/A

Density

  ~6.02 g/cm³

Product Codes

NCZ-2453K
Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''
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Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.125”

$2,616.00
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Product 

 Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.125''

CAS No.
 7787-32-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 175.32 g/mol

Melting Point

  1,368 °C

Boiling Point

2,260 °C

Density

  4.89 g/cm³

Product Codes

NCZ-2477K
Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250''
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Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$2,616.00
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Product 

 Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250''

CAS No.
 7787-32-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 175.32 g/mol

Melting Point

  1,368 °C

Boiling Point

2,260 °C

Density

  4.89 g/cm³

Product Codes

NCZ-2476K
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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, Testing Grade

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Price range: $623.00 through $2,611.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/565 € 5 pieces/2640 €                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
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Graphene Water Dispersion, Purity: 99.5%, Black Liquid, Graphene: 1,0 wt%

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Price range: $137.00 through $2,603.00
Select options This product has multiple variants. The options may be chosen on the product page
30 ml/125 € 60 ml/224 €                          120 ml/395 €                        500 ml/1280 €                   1000 ml/2360 € Please contact us for quotes on larger quantities !!!

Graphene Water Dispersion

Purity: 99.5%, Black Liquid, Graphene: 1,0 wt%

Graphene water dispersion raises environmentally safe handing of graphene for coating, composite, and other material applications. Graphene water dispersion is obtained by bath sonication of natural graphite flakes in water mixtures. Graphene water dispersion has outperformed commercial nano graphite at much lower loadings. Nanografi supplies Graphene Water Dispersion with high quantity and more types for different applications.

Technical Properties:

Graphene Purity (%) 99,5
Graphene Thickness (nm) 0,6-1,2 (single layer)
Diameter (µm) 2,0-12,0
Appearance Black Liquid
Concentration  (wt%) 1,0 (can be easily diluted)
Specific Surface Area (m2/g) 600-1200
Elemental Analysis C O
99,6 <0,4
 
H-MCM-49 (886853)
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H-MCM-49 (886853)

$2,595.00
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H-MCM-49 (886853)

SiO2/Al2O3(mol) ~30 BET(m2/g) ≥350 Pore volume(cm3/g) ≥0.18 Relative crystallinity(%) >90 Na2O weight(%) <0.07 Ignition residue(%) ≥95

 

Product Codes- NCZ-2741K
High Purity Boron Oxide (B2O3) Powder, 99.999%, 5N
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High Purity Boron Oxide (B2O3) Powder, 99.999%, 5N

Price range: $385.00 through $2,589.00
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Product High Purity Boron Oxide (B2O3) Powder, 99.999%, 5N
CAS No. 1303-86-2
Appearance White, amorphous or glassy
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS <10µm (Size Can be customized),  Ask for other available size range.
Ingredient B2O3
Molecular Weight 69.62 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.46 g/cm³
Product Codes NCZ-407I
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(-OH) Functionalized Short Length Double Walled Carbon Nanotubes, Purity: > 65%

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Price range: $181.00 through $2,581.00
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Applications:

Double Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

Price range: $561.00 through $2,577.00
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

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Price range: $549.00 through $2,542.00
Select options This product has multiple variants. The options may be chosen on the product page
  1 piece/495 € 5 pieces/2290 €                         Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium (N type)
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, EPI-Ready

, ,
Price range: $549.00 through $2,542.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/495 € 5 pieces/2290 €                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 111

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 8'', Thickness: 0.125''
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Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 8”, Thickness: 0.125”

$2,528.00
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Product 

 Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 8'', Thickness: 0.125''

CAS No.
 12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~233–300 g/mol (composition dependent)

Melting Point

  ~1625 °C (approximate)

Boiling Point

N/A

Density

 ~5.5–6.0 g/cm³ (depending on Ba:Sr ratio)

Product Codes

NCZ-2468K
Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 8'', Thickness: 0.250''
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Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$2,528.00
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Product 

 Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 8'', Thickness: 0.250''

CAS No.
 12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~233–300 g/mol (composition dependent)

Melting Point

  ~1625 °C (approximate)

Boiling Point

N/A

Density

 ~5.5–6.0 g/cm³ (depending on Ba:Sr ratio)

Product Codes

NCZ-2467K
Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 4'', Thickness: 0.125''
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Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$2,521.00
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Product 

 Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

1314-35-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 231.84 g/mol

Melting Point

1,473 °C

Boiling Point

1,700–1,850 °C

Density

 7.16 g/cm³

Product Codes

NCZ-1564K
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Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

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Price range: $115.00 through $2,520.00
Select options This product has multiple variants. The options may be chosen on the product page
Quartz Wafer (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch)
8YSZ Zirconium Oxide Yttria Stabilized Nanoparticles 50nm to 80nm
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8YSZ Zirconium Oxide Yttria Stabilized Nanoparticles 50nm to 80nm

Price range: $227.00 through $2,515.00
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Product 8YSZ Zirconium Oxide Yttria Stabilized Nanoparticles 50nm to 80nm
CAS No. 114168-16-0
Appearance White fine
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 50-80nm (Size Can be customized),  Ask for other available size range.
Ingredient (ZrO₂)_0.92 (Y₂O₃)_0.08
Molecular Weight 123.22 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.9 g/cm³
Product Codes NCZ-208I
 
8YSZ Zirconium Oxide Yttria Stabilized Nanoparticles 20nm to 40nm
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8YSZ Zirconium Oxide Yttria Stabilized Nanoparticles 20nm to 40nm

Price range: $227.00 through $2,515.00
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Product 8YSZ Zirconium Oxide Yttria Stabilized Nanoparticles 20nm to 40nm
CAS No. 66402-68-4
Appearance White fine
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20-40nm (Size Can be customized),  Ask for other available size range.
Ingredient (ZrO₂)_0.92(Y₂O₃)_0.08
Molecular Weight 123.22 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.88–5.91 g/cm³
Product Codes NCZ-207I
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

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Price range: $545.00 through $2,514.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/495 € 5 pieces/2280 €               Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Quality  Mechanical Grade
Size (inch)  4”
Thickness (μm)  350
Ra  ≤1
4H area  80%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤25
Bow  ≤30
Warp  ≤45
OF Length  32.5±2
IF Length  18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
3N (99.9%) Hafnium Oxide (HfO2) Pieces Evaporation Materials
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3N (99.9%) Hafnium Oxide (HfO2) Pieces Evaporation Materials

Price range: $341.00 through $2,508.00
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Product 3N (99.9%) Hafnium Oxide (HfO2) Pieces Evaporation Materials
CAS No. 7440-33-7
Appearance White, Crystalline Solid 
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 3-6mm (Size Can be customized),  Ask for other available size range.
Ingredient HfO2
Molecular Weight 210.49 g/mol
Melting Point 2758°C
Boiling Point 5100°C
Density 9.7 g/cm³
Product Codes NCZ-108E
 
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

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Price range: $534.00 through $2,508.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 100 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

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Price range: $534.00 through $2,508.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 111 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
Multilayer Chromium Carbide (Cr2C) MXene Material, 1g
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Multilayer Chromium Carbide (Cr2C) MXene Material, 1g

$2,505.00
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Product Multilayer Chromium Carbide (Cr2C) MXene Material, 1g
CAS No. N/A
Appearance Dark gray to black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100nm ( (Size Can be customized),  Ask for other available size range.
Ingredient Cr2C
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-462I
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(-COOH) Functionalized Short Length Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 8-18 nm

Price range: $33.00 through $2,500.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates
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Silicon Carbide Wafer (SiC-4H)- 4H , Size: 4”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

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Price range: $534.00 through $2,492.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/485 € 5 pieces/2260 €               Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality  Dummy Grade
Size (inch)  4”
Thickness (μm)  350
Ra  ≤0.3
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤25
Warp  ≤35
OF Length  32.5±2
IF Length  18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
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Polyhydroxylated Fullerene (Fullerenols)/ C60, (-OH) Functionalized, Dispersed in Water, 250 ppm Dry powder

Price range: $137.00 through $2,488.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity, anti-HIV drugs, anti-cancer drugs, chemotherapy drugs, cosmetics additives and scientific research. 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.
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High-Performance Copper Foil Rolls for Lithium Ion Battery, Size: 25 µm

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Price range: $544.00 through $2,482.00
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1 roll/544 € 5 rolls/2482 € Please contact us for quotes on larger quantities !!! High-Performance Copper Foil Rolls for Lithium Ion Battery
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High-Performance Copper Foil Rolls for Lithium Ion Battery, Size: 25 µm

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Price range: $544.00 through $2,482.00
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1 roll/544 € 5 rolls/2482 € Please contact us for quotes on larger quantities !!! High-Performance Copper Foil Rolls for Lithium Ion Battery
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(-OH) Functionalized Graphitized Multi Walled Carbon Nanotubes, Purity: > 99.99%, Outside Diameter: 4-16 nm

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Price range: $62.00 through $2,482.00
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Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template
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(-OH) Functionalized Graphitized Multi Walled Carbon Nanotubes, Purity: > 99.99%, Outside Diameter: 8-18 nm

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Price range: $62.00 through $2,482.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates
Iron Nanoparticles/ Nanopowder ( Fe, 99.7%, 40~60nm)
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Iron Nanoparticles/ Nanopowder ( Fe, 99.7%, 40~60nm)

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Price range: $133.00 through $2,479.00
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$133/25g
$370/100g
$1375/500g
$2479/kg

Product 

Iron Nanoparticles/ Nanopowder ( Fe, 99.7%, 40~60nm)

CAS No.
7439-89-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

300 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

AlN

Molecular Weight

63.55 g/mol

Melting Point

1084.62 °C

Boiling Point

2562 °C

Density

8.96 g/cm³

Product Codes

NCZ-1041K
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

Price range: $554.00 through $2,476.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 3”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality  Testing Grade Size (inch)  3”
PAMAM dendrimer(Ethylenediamine core) -NH2 End Group
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PAMAM dendrimer(Ethylenediamine core) -NH2 End Group

Price range: $127.00 through $2,475.00
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PAMAM dendrimer(Ethylenediamine core) -NH2 End Group  
  PAMAM   Grade   GENERATION   End Group No. of End Group   Molecular Weight   Molecular Formula   Price($/g)
   

 

 -NH2

End

Group

 NCZ-lOOA 0 -NH2 4 517 C22H48N1004 127
NCZ-llOA 1 -NH2 8 1430 C62H128N26012 265
NCZ-120A 2 -NH2 16 3256 C142H288N58028 379
NCZ-130A 3 -NH2 32 6909 C302H608N122060 425
NCZ-140A 4 -NH2 64 14215 C622Hl248N2500124 615
NCZ-150A 5 -NH2 128 28826 C1262H2528N5060252 765
NCZ-160A 6 -NH2 256 58048 C2542H5088N10180508 1375
NCZ-170A 7 -NH2 512 116493 C5102H10208N204201020 1755
NCZ-180A 8 -NH2 1024 233383 C10222H20448N409002044 2475
Product Codes- NCZ-2621K  
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Stainless Steel Two-Electrode Split Test Cell

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Price range: $557.00 through $2,475.00
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APPLICATIONS
  • Suitable for experiments such as battery charging and discharging AC impedance
  • Can be used for two-electrode or gel experiments
  • It is beneficial to the analysis of electrode materials, with less solution, constant pressure and good reproducibility
  • Fully sealed device, easy to disassemble and clean
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Graphitized Carbon Nanofibers, Purity: > 99.99%, Outside Diameter: 190-590 nm

Price range: $145.00 through $2,472.00
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Applications:

Carbon NanoFibers have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates
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Graphitized Carbon Nanofibers, Purity: > 99.99%, Outside Diameter: 190-590 nm

, ,
Price range: $144.00 through $2,467.00
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Applications:

Carbon NanoFibers have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates  
Hafnium Carbide (HfC) Powder, >98% Purity, -325 Mesh
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Hafnium Carbide (HfC) Powder, >98% Purity, -325 Mesh

Price range: $347.00 through $2,464.00
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Product Hafnium Carbide (HfC) Powder, >98% Purity, -325 Mesh
CAS No. 12069-85-1
Appearance Gray to black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 44µm (Size Can be customized),  Ask for other available size range.
Ingredient HfC
Molecular Weight 190.50 g/mol
Melting Point 3,890 °C
Boiling Point 7,150 °C
Density 12.7 g/cm³
Product Codes NCZ-370I
Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.250''
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Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

$2,426.00
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Product 

 Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.250''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

N/A

Density

  ~2.53 g/cm³

Product Codes

NCZ-2020K
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Graphitized Multi Walled Carbon Nanotubes, Purity: > 99.99%, Outside Diameter: 8-18 nm

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Price range: $89.00 through $2,422.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates
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Silicon Carbide Wafer (SiC-6H) – 6H , Size: 2”, Thickness: 350 μm, Dummy Grade, Usable Area: 95%

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Price range: $545.00 through $2,415.00
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1 piece/495 € 5 pieces/2190 €                           Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-6H) - 6H

Size: 2'', Thickness: 350 μm, Usable Area: 95%

Technical Properties:

Quality  Dummy Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤1
Usable Area  95%
Orientation  <0001>±0.5°
Resistivity   0.02 ~0.1 Ω·cm
TTV  ≤25
Bow  ≤30
Warp  ≤45
OF Length  15.9±1.7
IF Length  8±1.7

Fields of Application for Silicon Carbide (SiC-6H)- 6H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-6H) - 6H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Testing Grade, 4H Area: 80%

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Price range: $547.00 through $2,412.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 2” , Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality  Testing Grade Size (inch)
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 450±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N Type)

Price range: $163.00 through $2,412.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Single Side Polished, Thickness: 450± 25 μm, EPI-ready, Dopant: Silicon (N Type) Technical Properties:
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(-OH) Functionalized Graphitized Multi Walled Carbon Nanotubes, Purity: > 99.99%, Outside Diameter: 8-18 nm

Price range: $60.00 through $2,412.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

There are numerous possible uses for multiwalled carbon nanotubes in various industries. These applications span a variety of fields, such as energy, chemicals, electronics, mechanics, and medicine. One can use it for drug delivery, two for biosensors, three for CNT composites, and four for catalysis, 5-hydrogen storage, 6-nanoprobes 7-lithium power cells 8 tubes for gas discharge, 9- flat-panel monitors      10- supercapacitors and 11- transistors , 12, solar cells, 13-Photoluminescence, 14 templates

 
1 meter5 meter
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Carbon Nanotube Fibres, Fiber Diameter: 5-12 µm, Tensile Strength 1000-1200 MPa, Electrical conductivity 5×10^4~7×10^4 S/m

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Price range: $552.00 through $2,373.00
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Carbon Nanotube Fibres, Fiber Diameter: 5-12 µm, Tensile Strength 1000-1200 MPa, Electrical conductivity 5×104~7×104 S/m Carbon nanotube fibers have moderate to high strengths. Also, they possess good electrical conductivity and very low density. Due to these properties, carbon nanotube fibers can be integrated into fabrics and composites. Their area of usage involves their use as stand-alone or embedded sensors. Moreover, their high strength, stiffness, thermal and electrical conductivity enable their use as functional reinforcements in composite materials, in active heating/cooling systems, electrical conductivity/EMI shielding mechanisms such as CNT/epoxy composites and in atmospheric anti-threat detection in UAVs.
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Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

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Price range: $110.00 through $2,370.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm Technical Properties: Quality Prime
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 400±25 μm, Double Side Polished, EPI-ready

Price range: $153.00 through $2,370.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 400± 25 μm, EPI-ready  Technical Properties: Quality  GaAs Materials  GaAs
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Graphitized Multi Walled Carbon Nanotubes, Purity: > 99.99%, Outside Diameter: 8-18 nm

Price range: $87.00 through $2,354.00
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Applications:

There are numerous possible uses for multiwalled carbon nanotubes in various industries. Medicine, mechanics, electrical and electronic systems, chemistry, energy, and other fields are among these uses. Drug delivery, biosensors, CNT composites, catalysis, nanoprobes, and hydrogen storage are just a few of the applications for which it can be used. 7-lithium power cells 8 tubes for gas discharge, 10-supercapacitors, 11-transistors, 12 solar cells, and 9 flat panel displays 13-luminescence and 14-models

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.99%, Size: 4'', Thickness: 0.125'', Beige to White
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Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.99%, Size: 4”, Thickness: 0.125”, Beige to White

$2,335.00
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Product 

 Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.99%, Size: 4'', Thickness: 0.125'', Beige to White

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

 ~4.23 g/cm³

Product Codes

NCZ-1417K
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Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

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Price range: $106.00 through $2,331.00
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1 piece/96 € 5 pieces/440 € 25 pieces/2100 €                       Please contact us for quotes on larger quantities !!! 

Quartz Wafer

(X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 4”
Orientation (X-Cut)
Coating  
Thickness (μm) 200 ± 25
Doping  
Resistivity (ohm.cm)  
Polished Double Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.
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Perovskite Quantum Dots (CsPbCl3) 410 nm

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Price range: $805.00 through $2,330.00
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APPLICATIONS Numerous fields of application are possible for PVK quantum dots because of their electrical and optoelectronic characteristics. Uses for PVK Quantum Dots include;
  • Biosensors,
  • Bioimaging,
  • Light Emitting Diodes (LEDs),
  • Photodetectors,
  • Solar Cells,
  • Photocatalyst.
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Perovskite Quantum Dots (CsPbBr3) 510 nm

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Price range: $805.00 through $2,330.00
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APPLICATIONS Numerous fields of application are possible for PVK quantum dots because of their electrical and optoelectronic characteristics. Uses for PVK Quantum Dots include;
  • Biosensors,
  • Bioimaging,
  • Light Emitting Diodes (LEDs),
  • Photodetectors,
  • Solar Cells,
  • Photocatalyst.
Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''
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Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$2,326.00
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Product 

 Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''

CAS No.

 7440-22-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 107.87 g/mol

Melting Point

 961.78 °C

Boiling Point

 2162 °C

Density

  10.49 g/cm³

Product Codes

NCZ-1686K
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Polyhydroxylated Fullerene (Fullerenols)/ C60, (-OH) Functionalized, Dispersed in Water, 130 ppm Dry powder

Price range: $119.00 through $2,325.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity, anti-HIV drugs, anti-cancer drugs, chemotherapy drugs, cosmetics additives and scientific research. 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

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Price range: $494.00 through $2,320.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/445 € 5 pieces/2090 €                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 100

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

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Price range: $494.00 through $2,320.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/445 € 5 pieces/2090 €                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 111

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.