Carbon Nanotube Sponges, Size: 50 mm x 10 mm, Thickness: 3-4 mm

Price range: $494.00 through $2,139.00
Select options This product has multiple variants. The options may be chosen on the product page
Carbon Nanotube Sponges, Size: 50 mm x 10 mm, Thickness: 3-4 mm The carbon nanotube sponge structure is uniform and they possess good mechanical strength, good flexibility, high porosity and low density. They can be used as a purifying agent in order to absorb pollutants. These pollutants can be fertilizers, pesticides or pharmaceuticals found in water, energy storage materials, catalyst carriers or in high-efficiency composite materials.

Neodymium (III) Oxide (Nd2O3) 99.999% 5N Powder

Price range: $260.00 through $2,136.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Neodymium (III) Oxide (Nd2O3) 99.999% 5N Powder
CAS No. 2037-29-5
Appearance White to off-white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–10 nm (Size Can be customized),  Ask for other available size range.
Ingredient Nd2O3
Molecular Weight 336.48 g/mol
Melting Point N/A
Boiling Point N/A
Density 7.24 g/cm³
Product Codes NCZ-470I

4N5 (99.995%) Tantalum (V) Oxide (Ta2O5) Powder

Price range: $381.00 through $2,136.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 4N5 (99.995%) Tantalum (V) Oxide (Ta2O5) Powder
CAS No. 1314-61-0
Appearance White 
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Ta2O5
Molecular Weight 441.89 g/mol
Melting Point 1872°C
Boiling Point N/A
Density  8.18 g/cm³ 
Product Codes NCZ-182I

30 nm High Purity 99.99% Aluminum Oxide Nanoparticles

Price range: $95.00 through $2,136.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 30 nm High Purity 99.99% Aluminum Oxide Nanoparticles
CAS No. 1344-28-1
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 30nm (Size Can be customized), Ask for other available size range.
Ingredient Al2O3
Molecular Weight 101.96 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-152I

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$2,133.00

Product 

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''

CAS No.

1314-35-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

231.84 g/mol

Melting Point

1,473 °C

Boiling Point

1,700–1,850 °C

Density

7.16 g/cm³

Product Codes

NCZ-1567K

Calcium Oxide (CaO) Nanopowder/Nanoparticles, Purity: 99.95+%, Size: 10-70 nm

Price range: $40.00 through $2,118.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/36 € 25 grams/122 €                       
100 grams/329 €                     
500 grams/1122 €                    
1000 grams/1863 € Please contact us for quotes on larger quantities !!!

Calcium Oxide (CaO) Nanopowder/Nanoparticles

Purity: 99.95+%, Size: 10-70 nm

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$2,108.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 8'', Thickness: 0.250''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2395K

Magnesium Oxide (MgO) Sputtering Targets, indium, Purity: 99.95%, Size: 4”, Thickness: 0.125”

$2,106.00

Product 

Magnesium Oxide (MgO) Sputtering Targets, indium, Purity: 99.95%, Size: 4'', Thickness: 0.125''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

 ~3.58 g/cm³

Product Codes

NCZ-1955K

Silver (Ag) Nanopowder/Nanoparticles Dispersion, Purity: 99.99%, Size: 14 nm, 52000 ppm

Price range: $199.77 through $2,099.81
Select options This product has multiple variants. The options may be chosen on the product page
Silver (Ag) Nanopowder/Nanoparticles Dispersion Purity: 99.99%, Size: 14 nm, 52000 ppm Technical Properties: Ag Nanoparticle Purity (%) 99,99 Ag Concentration (wt%/ppm) 5,0/52000 pH

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

$2,097.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium (III) Oxide ( In2O3) 99.99% 4N Powder

Price range: $549.00 through $2,089.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Indium (III) Oxide ( In2O3) 99.99% 4N Powder
CAS No. 1312-43-8
Appearance White to pale yellow
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–5µm (Size Can be customized),  Ask for other available size range.
Ingredient In2O3
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 7.18 g/cm³
Product Codes NCZ-424I

Silver Indium (Ag-In) Alloy Nanopowder/Nanoparticles, Purity: 99.9%, Size: 40-100 nm

Price range: $145.28 through $2,088.46
Select options This product has multiple variants. The options may be chosen on the product page
Silver Indium (Ag-In) Alloy Nanopowder/Nanoparticles Purity: 99.9%, Size: 40-100 nm Technical Properties: Alloy Ratio (Ag-In) depends on customer needs Average Particle

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$2,087.00

Product 

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

12626-81-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~303.1 g/mol

Melting Point

 ~1,250°C – 1,350°C

Boiling Point

N/A

Density

 ~7.75–8.0 g/cm³

Product Codes

NCZ-2064K

Polyhydroxylated Fullerene (Fullerenols)/ C60, (-OH) Functionalized, Dispersed in Water, 130 ppm Dry powder

Price range: $106.00 through $2,082.00
Select options This product has multiple variants. The options may be chosen on the product page
25 ml/95 € 100 ml/290 € 500 ml/1140 € 1000 ml/1860 € Please contact us for quotes on larger quantities.       

Polyhydroxylated Fullerene (Fullerenols)/ C60

(-OH) Functionalized, Dispersed in Water, 130 ppm Dry powder

The starting material is >98% purity C60 fullerenes. C60 bearing over 40 hydroxyl groups that have higher water solubility (>50 mg/mL). These exist as monodisperse nanoparticles in water, and have a valiant polishing effect. They exhibit superior antioxidant and anti-inflammatory properties.

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity, anti-HIV drugs, anti-cancer drugs, chemotherapy drugs, cosmetics additives and scientific research. 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Double Side Polished, EPI-ready, Dopant: Zinc (P Type)

Price range: $139.00 through $2,081.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/126€ 5 pieces/480€ 25 pieces/1875€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 350± 25 μm, EPI-ready, Dopant: Zinc (P Type) Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Double Side
Dopant  Zinc (P Type)
Orientation  (100) = 0 deg off toward <111A>
Resistivity  ( 1.2-9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length  7±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$2,080.00

Product 

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.250''

CAS No.

12626-81-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~303.1 g/mol

Melting Point

 ~1,250°C – 1,350°C

Boiling Point

N/A

Density

 ~7.75–8.0 g/cm³

Product Codes

NCZ-2059K

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 7”, Thickness: 0.250”

$2,078.00

Product 

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 7'', Thickness: 0.250''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

N/A

Density

 ~2.53 g/cm³

Product Codes

NCZ-2022K

High Purity Natural Graphite Nanopowder/Nanoparticles for Li-ion Battery, Purity: 99.99+%, Size: 30 nm

Price range: $82.00 through $2,062.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/82 € 25 grams/193 €                        100 grams/443 €       

High Purity Natural Graphite Nanopowder/Nanoparticles for Li-ion Battery, Purity: 99.99+%, Size: 30 nm

Price range: $82.00 through $2,062.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/82 € 25 grams/193 €                        100 grams/443 €       

Graphite Fluoride (Carbon Monofluoride) Micron Powder for Li-ion Battery, 10-20 micron, F/C Ratio : 0.8-1.0

Price range: $68.00 through $2,060.00
Select options This product has multiple variants. The options may be chosen on the product page
Graphite Fluoride (Carbon Monofluoride) Micron Powder for Li-ion Battery, 10-20 micron, F/C Ratio: 0.8-1.0 5 grams / 68 € 25

Coin Cell Punching Machine

$2,057.00
Product Information Product Name Coin Cell Punching Machine Product No NG10BEW0919 Machine model Disc cutter for coin cell electrode punch

4N 99.99% Tantalum Disulfide (TaS2) Powder

Price range: $733.00 through $2,053.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 4N 99.99% Tantalum Disulfide (TaS2) Powder
CAS No. 12143-72-5
Appearance Dark brown
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient TaS2
Molecular Weight 245.07 g/mol
Melting Point N/A
Boiling Point N/A
Density 6.86 g/cm³
Product Codes NCZ-180I

Polyhydroxylated Fullerene (Fullerenols)/ C60, (-OH) Functionalized, Dispersed in Water, 80 ppm Dry powder

Price range: $99.00 through $2,050.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity, anti-HIV drugs, anti-cancer drugs, chemotherapy drugs, cosmetics additives and scientific research. 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.

(-OH) Functionalized Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: < 8 nm

Price range: $67.00 through $2,044.00
Select options This product has multiple variants. The options may be chosen on the product page

(-OH) Functionalized Multi Walled Carbon Nanotubes

Purity: > 96%,  Outside Diameter: < 8 nm

Multi walled carbon nanotubes (MWCNTs, MWNTs) are a particular form of carbon nanotubes in which several single walled carbon nanotubes are embedded inside one another. MWCNTs exhibit exceptional electrical, mechanical and thermal properties such as the electrical conductivity, mechanical strength and thermal conductivity. These impressive properties contribute to gain an important place in a wide range of applications such as batteries, solar cells, transistors, nano-electronics, flat panel display, energy storage and many more. We are glad to provide Multi Walled Carbon Nanotubes with lowest prices and highest quality.

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”, Beige to White

$2,042.00

Product 

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250'', Beige to White

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

~4.23 g/cm³

Product Codes

NCZ-1431K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 6”, Thickness: 0.250”

$2,038.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 6'', Thickness: 0.250''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2396K

PVDF Binder for Li-ion Battery Electrodes (set: 80g )

Price range: $95.00 through $2,035.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

PVDF Binder for Li-ion Battery Electrodes 80g/bag PVDF (Polyvinylidene fluoride ) binder is for mixing together with cathode powder to prepare Li-ion battery electrode 80g/bag, vacuum sealed in plastic bag.

PVDF Binder for Li-ion Battery Electrodes (set: 80g )

Price range: $95.00 through $2,035.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

PVDF Binder for Li-ion Battery Electrodes 80g/bag PVDF (Polyvinylidene fluoride ) binder is for mixing together with cathode powder to prepare Li-ion battery electrode 80g/bag, vacuum sealed in plastic bag.

PVDF Binder for Li-ion Battery Electrodes (set: 80g )

Price range: $95.00 through $2,035.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

PVDF Binder for Li-ion Battery Electrodes 80g/bag PVDF (Polyvinylidene fluoride ) binder is for mixing together with cathode powder to prepare Li-ion battery electrode 80g/bag, vacuum sealed in plastic bag.

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, Testing Grade

Price range: $439.00 through $2,031.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/396  5 pieces/1830                            Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  Testing Grade
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, Testing Grade

Price range: $439.00 through $2,031.00
Select options This product has multiple variants. The options may be chosen on the product page
  1 piece/396  5 pieces/1830                          Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Silicon (Si) Nanopowder for Battery Applications

Price range: $115.00 through $2,028.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/115 € 25 grams/234 €                        100 grams/708 €       

Silicon (Si) Nanopowder for Battery Applications

Price range: $115.00 through $2,028.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/115 € 25 grams/234 €                        100 grams/708 €       

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Production Grade, 4H Area: 100%

Price range: $444.00 through $2,028.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-4H)-4H Size: 3”, Thickness: 350 μm, 4H Area: 100% Technical Properties: Quality  Production Grade Size (inch)  3” Thickness (μm)

Silicon (Si) Nanopowder for Battery Applications

Price range: $115.00 through $2,028.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/115 € 25 grams/234 €                        100 grams/708 €       

Silicon Carbide Wafer (SiC-4H)- 4H, Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 95%

Price range: $456.00 through $2,010.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality Dummy Grade Size (inch)  2”

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.99%, Size: 4”, Thickness: 0.125”, Beige to White

$2,002.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$1,995.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

A chemical compound consisting of barium and fluorine, barium fluoride (BaF2) is a salt. It is a solid that has the potential to be a clear crystal. One chemical compound for the 10–20 µm wavelength infrared area is barium fluoride. Enamel, glazing frits, and aluminum metallurgy all use barium fluoride.

Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$1,994.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,987.00

Product 

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

1314-35-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

231.84 g/mol

Melting Point

1,473 °C

Boiling Point

1,700–1,850 °C

Density

7.16 g/cm³

Product Codes

NCZ-1568K

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 7”, Thickness: 0.125”

$1,984.00

Product 

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 7'', Thickness: 0.125''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

N/A

Density

 ~2.53 g/cm³

Product Codes

NCZ-2023K

Gold-Carbon Nanotube Fibers Composite Wires, Au-CNT, Diameter: 10-30 µm, Coating Thickness: 1 µm, Electrical conductivity: 1×10^7 S/m

Price range: $503.00 through $1,975.00
Select options This product has multiple variants. The options may be chosen on the product page
Gold-Carbon Nanotube Fibers Composite Wires Au-CNT, Diameter: 10-30 µm, Coating Thickness: 1 µm, Electrical conductivity: 1x107 S/m Gold/carbon nanotube composites (Au/CNT composites) is produced for the demand of superior electrical, thermal and mechanical performances. They are used in many industries and vehicles in order to obtain better conductivity performances. In electronics, they offer better interconnection and thermal management than non-composite materials. This material is highly functional, efficient, and sustainable for the next-generation electrical and electronics systems.

Platinum (Pt) Nanopowder/Nanoparticles Dispersion, Purity: 99.99%, Size: 10 nm, 1100 ppm

Price range: $101.00 through $1,974.00
Select options This product has multiple variants. The options may be chosen on the product page
30 ml/92 € 60 ml/169 € 120 ml/284 € 500 ml/994 € 1000 ml/1790 € Please contact us for quotes on larger quantities !!

Platinum (Pt) Nanopowder/Nanoparticles Dispersion

Purity: 99.99%, Size: 10 nm, 1100 ppm

Technical Properties:

Pt Nanoparticle Purity (%) 99,99
Pt Concentration (wt%/ppm) 0,1/1100
pH 7,0
Average Particle Size (nm) 10
Color black

Applications:

Platinum nanopowder is known to have effective catalysis properties and oxidation resistance. It is also safe and antimicrobial which makes it a good preservative material for food storage, cosmetics and medical industry. Note: Platinum nanoparticle dispersion product contains no extra chemical reagent. It should be kept away from sunlight. It is a research grade product, it should be handled by professional people. If nanoparticles begin to agglomerate after stored for a long time, the dispersion can be simply mixed before use.  

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

Price range: $430.00 through $1,974.00
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1 piece/390 € 5 pieces/1790 €                         Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality  Dummy Grade
Size (inch)  3”
Thickness (μm)  350
Ra  ≤0.3
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤25
Warp  ≤35
OF Length  22.0±2.0
IF Length  11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H)- 4H wafer has superior electronic properties, silicon carbide (SiC-6H)– 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.

30nm Monoclinic Zirconium Dioxide ZrO2 Nanoparticles, >99.9% High Purity

Price range: $143.00 through $1,969.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 30nm Monoclinic Zirconium Dioxide ZrO2 Nanoparticles, >99.9% High Purity
CAS No. 1344-28-1
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 30nm (Size Can be customized), Ask for other available size range.
Ingredient ZrO2
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-155I
 

10nm Monoclinic Zirconium Dioxide ZrO2 Nanoparticles, >99.9% High Purity

Price range: $143.00 through $1,969.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 10nm Monoclinic Zirconium Dioxide ZrO2 Nanoparticles, >99.9% High Purity
CAS No. 1314-23-4
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10nm (Size Can be customized),  Ask for other available size range.
Ingredient ZrO₂
Molecular Weight 123.22 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.68–5.89 g/cm³
Product Codes NCZ-135I

Lead Zirconate Titanate (PZT) Nanopowder/Nanoparticles, Purity: 99.5+ %, Size: < 100 nm

Price range: $47.00 through $1,968.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Lead Zirconate Titanate (PZT)

Lead Zirconate Titanate nanoparticles/nanopowder are commonly used in applications that require high temperatures and sensitivity. Lead Zirconate Titanate nanoparticles/nanopowder based materials are components of ultrasound transducers and ceramic capacitors, STM/AFM actuators. Lead Zirconate Titanate nanoparticles/nanopowder are also used in the manufacture of ceramic resonators for  reference timing in electronic circuitry.

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350±25 μm, Orientation: 100, Single Side Polished, EPI-Ready

Price range: $432.00 through $1,968.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 100 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

Price range: $432.00 through $1,968.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 111 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

Price range: $414.00 through $1,968.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 100 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

Price range: $414.00 through $1,968.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 111 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$1,967.00

Product 

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1–5 μm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

237.66 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

~6.4–6.8 g/cm³

Product Codes

NCZ-1776K

Thulium (Tm) Metal 99.9% 3N, 1kg

$1,965.00
Product Thulium (Tm) Metal 99.9% 3N, 1kg
CAS No. 7440-31-5
Appearance Silvery-gray metallic solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1-100µm  (Size Can be customized),  Ask for other available size range.
Ingredient Tm
Molecular Weight 168.93 g/mol
Melting Point 1545 °C
Boiling Point N/A
Density 9.32 g/cm³
Product Codes NCZ-555I
 

1kg 99.9 (3N) Europium (Eu) Metal

$1,965.00
Product 1kg 99.9 (3N) Europium (Eu) Metal
CAS No. 7440-53-1
Appearance Silvery-white, soft metal
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 0.5–10µm (Size Can be customized), Ask for other available size range.
Ingredient Eu
Molecular Weight N/A
Melting Point 822 °C
Boiling Point 1529 °C
Density 5.24 g/cm³
Product Codes NCZ-142I

Solid Electrolyte, LAGP Sputtering Target for LISICON Thin Films

Price range: $1,745.00 through $1,965.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Solid Electrolyte, LAGP Sputtering Target for LISICON Thin Films
CAS No. 872345-60-3
Appearance White ceramic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Li₁.₅Al₀.₅Ge₁.₅(PO₄)₃
Molecular Weight 417.77 g/mol
Melting Point N/A
Boiling Point N/A
Density 3.42 g/cm3
Product Codes NCZ-151H
 

100 nm High Purity 99.99% Alpha Aluminum Oxide Nanoparticles

Price range: $88.00 through $1,960.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 100 nm High Purity 99.99% Alpha Aluminum Oxide Nanoparticles
CAS No. 1344-28-1
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100nm (Size Can be customized), Ask for other available size range.
Ingredient Al2O3
Molecular Weight 101.96 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-119I
 

Short Length Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 4-16 nm

Price range: $62.00 through $1,953.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Erbium (III) Oxide (Er2O3) 99.99% 4N Powder

Price range: $293.00 through $1,943.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Erbium (III) Oxide (Er2O3) 99.99% 4N Powder
CAS No. 12061-16-4
Appearance Fine pink powder or crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20–30nm (Size Can be customized),  Ask for other available size range.
Ingredient Er2O3
Molecular Weight 372.998 g/mol
Melting Point 2,344 °C
Boiling Point 3,290 °C
Density 8.64 g/cm³
Product Codes NCZ-339I
 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$1,939.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2398K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$1,939.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2397K