(-COOH) Functionalized Single Walled Carbon Nanotubes, Purity: > 92%, SSA: 370 m2/g

Price range: $120.00 through $1,845.00
Select options This product has multiple variants. The options may be chosen on the product page

(-COOH) Functionalized Single Walled Carbon Nanotubes

Purity: > 92%, SSA: 370 m2/g, Dia: 1.0 nm

Single walled carbon nanotubes (SWCNTs, SWNTs) comprise of one-atom-thick sheets of graphene that rolled up to form long hollow tubes. SWCNTs possess exceptional thermal, mechanical and electrical properties. These remarkable properties lead to advances in performance in a wide range of materials and devices. Single-walled carbon nanotubes are actively used in diverse area including energy storage, molecular electronics, nanomechanial devices, composites and bio-sensing. You can buy (-COOH) Functionalized Single Walled Carbon Nano Tubes with low prices and high purity. 

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$1,843.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel Foil, Purity: 99.9+% , Thickness: 0.03mm, Width: 100mm

Price range: $385.00 through $1,837.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece / 385 € 5 pieces / 1837 € Please contact us for quotes on larger quantities ! Nickel Foil,

Polyhydroxylated Fullerene (Fullerenols)/ C60, (-OH) Functionalized, Dispersed in Water, 80 ppm Dry powder

Price range: $89.00 through $1,836.00
Select options This product has multiple variants. The options may be chosen on the product page
25 ml/80 € 100 ml/245 € 500 ml/985 € 1000 ml/1640 € Please contact us for quotes on larger quantities.

Polyhydroxylated Fullerene (Fullerenols)/ C60

(-OH) Functionalized, Dispersed in Water, 80 ppm Dry powder

The starting material is >98% purity C60 fullerenes. C60 bearing over 40 hydroxyl groups that have higher water solubility (>50 mg/mL). These exist as monodisperse nanoparticles in water, and have a valiant polishing effect. They exhibit superior antioxidant and anti-inflammatory properties.

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity, anti-HIV drugs, anti-cancer drugs, chemotherapy drugs, cosmetics additives and scientific research. 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.  

Fullerene-C70, Purity: 99.9%

Price range: $387.00 through $1,836.00
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1 gram/346 € 5 grams/1640 €                         
Please contact us for quotes on larger quantities !!!

Fullerene-C70

Purity: 99.9%

Technical Properties:

Fullerene Compound Formula C70
Fullerene  Molecular Weight 840.77 g/mol
Fullerene  Purity 99.9%
Fullerene  Melting Point >280 °C
Fullerene  Appearance Black Powder
Fullerene  CAS 115383-22-7

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.  

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,834.00

Product 

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1–5 μm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

237.66 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

~6.4–6.8 g/cm³

Product Codes

NCZ-1777K

Niobium Carbide (Nb2CTx) MXene Multilayer Nanoflakes

Price range: $248.00 through $1,832.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Niobium Carbide (Nb2CTx) MXene Multilayer Nanoflakes
CAS No. 60687-94-7
Appearance Gray-black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–5µm (Size Can be customized),  Ask for other available size range.
Ingredient Nb2CTx
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 6–7 g/cm³
Product Codes NCZ-481I
 

Ti3C2Tx MXene Multilayer Nanoflakes

Price range: $407.00 through $1,825.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Ti3C2Tx MXene Multilayer Nanoflakes
CAS No. N/A
Appearance Black or dark gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 0.5–10µm (Size Can be customized),  Ask for other available size range.
Ingredient Ti₃C₂Tₓ,
Molecular Weight 195.88 g/mol
Melting Point N/A
Boiling Point N/A
Density 3.0–3.5 g/cm³
Product Codes NCZ-561I

Gold (Au) Nanopowder/Nanoparticles, Purity: 99.99+%, Size: 28 nm

Price range: $415.00 through $1,822.00
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Gold (Au) Nanopowder/Nanoparticles

Purity: 99.99+%, Size: 28 nm

Technical Properties:

Bulk Density (g/cm3) 0,92
True Density (g/cm3) 19,32
Color red - purple
Shape spherical
Crystal Structure cubic
Tmelting (oC) 1063
Tboiling (oC) 2966
Average Particle Size (nm) 28
Elemental Analysis Au Pb Cd Ag Fe Cu As, Sb
99.99 0.005 0.003 0.002 0.002 0.009 0.002

Applications:

Gold nanoparticle is used as chemical, medical and biological reagents. It is a well known and frequently used material in electronics and cosmetics industry.

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350±25 μm, Orientation: 100, Single Side Polished, EPI-Ready

Price range: $399.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/360  5 pieces/1640                            Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

Price range: $399.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/360  5 pieces/1640                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 111

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

Price range: $383.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/345  5 pieces/1640                            Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

Price range: $383.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/345 € 5 pieces/1640 € Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 111

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility (1.5-3.5)E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.

3N (99.9%) 150nm Silicon (Si) Nanopowder

Price range: $210.00 through $1,815.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 3N (99.9%) 150nm Silicon (Si) Nanopowder
CAS No. 7440-21-3
Appearance Gray to black fine
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 150nm (Size Can be customized),  Ask for other available size range.
Ingredient Si
Molecular Weight 28.0855 g/mol
Melting Point 1,414 °C
Boiling Point N/A
Density 2.33 g/cm³
Product Codes NCZ-157I
 

Europium (Eu) Sputtering Target

Price range: $515.00 through $1,814.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Europium (Eu) Sputtering Target

CAS No.

7440-53-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

151.964 g/mol

Melting Point

826 °C

Boiling Point

1,529 °C

Density

~5.24 g/cm³

Product Codes

NCZ-1288K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$1,810.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,806.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

An inorganic substance is lead zirconium titanate. This ceramic perovskite material has a strong piezoelectric effect, which means that when an electric field is applied, the compound changes shape. Lead zirconium titanate is employed in a number of practical applications such as ultrasonic transducers and piezoelectric resonators.

Silver-Carbon Nanotube Fibers Composite Wires, Ag-CNT, Diameter: 10-30 µm, Coating Thickness: 1 µm, Electrical conductivity: 1.5×10^7 S/m

Price range: $447.00 through $1,805.00
Select options This product has multiple variants. The options may be chosen on the product page
Silver-Carbon Nanotube Fibers Composite Wires Ag-CNT, Diameter: 10-30 µm, Coating Thickness: 1 µm, Electrical conductivity: 1.5x107 S/m Silver/carbon nanotube composites (Ag/CNT composites) is produced for the demand of superior electrical, thermal and mechanical performances. They are used in many industries and vehicles in order to obtain better conductivity performances. In electronics, they offer better interconnection and thermal management than non-composite materials. This material is highly functional, efficient, and sustainable for the next-generation electrical and electronics systems.

Single Layer Graphene Oxide, Purity: 99.5 %

Price range: $181.00 through $1,804.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Single Layer Graphene Oxide

  • Energy Storage
  • Biomedical Applications
  • Biosensors

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.125”

$1,803.00

Product 

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 6'', Thickness: 0.125''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

N/A

Density

 ~2.53 g/cm³

Product Codes

NCZ-2025K

(-COOH) Functionalized Short Length Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 28-48 nm

Price range: $55.00 through $1,802.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$1,800.00

Product 

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

 12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~233–300 g/mol (composition dependent)

Melting Point

 ~1625 °C (approximate)

Boiling Point

N/A

Density

~5.5–6.0 g/cm³ (depending on Ba:Sr ratio)

Product Codes

NCZ-2473K

Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,800.00

Product 

Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

1314-35-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

231.84 g/mol

Melting Point

1,473 °C

Boiling Point

1,700–1,850 °C

Density

7.16 g/cm³

Product Codes

NCZ-1565K

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”, Beige to White

$1,800.00

Product 

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125'', Beige to White

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

~4.23 g/cm³

Product Codes

NCZ-1432K

1% Gold (Au) Nanoparticle Water Dispersion, 50nm, >99.95% Purity

Price range: $953.00 through $1,800.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 1% Gold (Au) Nanoparticle Water Dispersion, 50nm, >99.95% Purity
CAS No. 7440-56-4
Appearance Pink to red liquid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 50nm (Size Can be customized), Ask for other available size range.
Ingredient Au
Molecular Weight 196.97 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-112I

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$1,800.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

An inorganic substance is lead zirconium titanate. This ceramic perovskite material has a strong piezoelectric effect, which means that when an electric field is applied, the compound changes shape. Lead zirconium titanate is employed in a number of practical applications such as ultrasonic transducers and piezoelectric resonators.

Copper-Carbon Nanotube Fibers Composite Wires, Cu-CNT, Diameter: 10-30 µm, Coating Thickness: 1 µm, Electrical conductivity: 1×10^7 S/m

Price range: $435.00 through $1,799.00
Select options This product has multiple variants. The options may be chosen on the product page
Copper-Carbon Nanotube Fibers Composite Wires Cu-CNT, Diameter: 10-30 µm, Coating Thickness: 1 µm, Electrical conductivity: 1x107 S/m Copper/carbon nanotube composites (Cu/CNT composites) is produced for the demand of lighter copper substitutes with superior electrical, thermal and mechanical performances. They are used in many industries and vehicles such as automobiles and aircrafts in order to enhance fuel efficiencies. In electronics, they offer better interconnection and thermal management than copper with higher current- and heat-stabilities to enable device miniaturization with increased functionality. This material is highly functional, efficient, and sustainable for the next-generation electrical and electronics systems.

Germanium (Ge) Micron Powder, Purity: 99.99 %, Size: 325 mesh

Price range: $259.00 through $1,798.00
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25 grams/230 € 100 grams/478 € 500 grams/ 965 € 1000 grams/1595 €
Please contact us for quotes on larger quantities !!!

Germanium (Ge) Micron Powder

Purity: 99.99 %, Size: 325 mesh

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 7”, Thickness: 0.250”

$1,797.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lead Telluride (PbTe) Sputtering Target

Price range: $566.00 through $1,794.00
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Product 

Lead Telluride (PbTe) Sputtering Target

CAS No.

1314-91-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 334.8 g/mol

Melting Point

~924 °C

Boiling Point

~1,476 °C

Density

~8.16 g/cm³

Product Codes

NCZ-1345K

Platinum (Pt) Nanopowder/Nanoparticles Dispersion, Purity: 99.99%, Size: 10 nm, 1100 ppm

Price range: $104.42 through $1,790.00
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Description 30 ml/92 € 60 ml/169 € 120 ml/284 € 500 ml/994 € 1000 ml/1790 € Technical Properties: Pt Nanoparticle Purity (%) 99,99 Pt Concentration

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$1,789.00

Product 

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

 12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~233–300 g/mol (composition dependent)

Melting Point

 ~1625 °C (approximate)

Boiling Point

N/A

Density

~5.5–6.0 g/cm³ (depending on Ba:Sr ratio)

Product Codes

NCZ-2471K

5N (99.999%) Selenium (Se) Pieces (1-3mm) Evaporation Materials

Price range: $389.00 through $1,789.00
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Product 5N (99.999%) Selenium (Se) Pieces (1-3mm) Evaporation Materials
CAS No. 7782-94-2
Appearance Gray, Metallic Luster, Non-Metallic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1-3mm (Size Can be customized),  Ask for other available size range.
Ingredient Se
Molecular Weight N/A
Melting Point 217 °C
Boiling Point N/A
Density 4.81 g/cm³
Product Codes NCZ-200I
 

5N (99.999%) Selenium (Se) Pieces (1-3mm) Evaporation Materials

Price range: $389.00 through $1,789.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 5N (99.999%) Selenium (Se) Pieces (1-3mm) Evaporation Materials
CAS No. 7782-94-2
Appearance Gray, Metallic Luster, Non-Metallic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1-3mm (Size Can be customized),  Ask for other available size range.
Ingredient Se
Molecular Weight 78.96 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.13 g/cm3
Product Codes NCZ-157E

Multi Walled Carbon Nanotubes, Purity: 92%, Outside Diameter: 8-10 nm

Price range: $38.00 through $1,788.00
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Multi Walled Carbon Nanotubes

Purity: 92%,  Outside Diameter: 8-10 nm

Multi walled carbon nanotubes (MWCNTs, MWNTs) are a particular form of carbon nanotubes in which several single walled carbon nanotubes are embedded inside one another. MWCNTs exhibit exceptional electrical, mechanical and thermal properties such as the electrical conductivity, mechanical strength and thermal conductivity. These impressive properties contribute to gain an important place in a wide range of applications such as batteries, solar cells, transistors, nano-electronics, flat panel display, energy storage and many more. We are glad to provide Multi Walled Carbon Nanotubes with lowest prices and highest quality.

Erbium (Er) Micron Powder, Purity: 99.5 %, Size: 325 mesh

Price range: $59.00 through $1,782.00
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Applications:

Erbium is named after the Swedish town Ytterby where it was first discovered. It is fairly stable in air and does not oxidize as rapidly as some of the other rare earth metals. Erbium when it is ionized fluoresces in a bright pink color. This property makes it highly useful for imaging and optical applications. Erbium is used in optics as doping agent in optical fibers. It enables the fiber to be optically pumped which acts as an amplifier for signals passing through it. It is used in sunglasses and jewelry due to their sharp absorption spectra bands in visible, ultraviolet and near infrared light. It is also used as a colorant for glass and porcelain. It provides the pink color in cubic zirconia.

Short Length Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 28-48 nm

Price range: $55.00 through $1,781.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Cd-based QLED Quantum Dots 465 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

Cd-based QLED Quantum Dots 525 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

Cd-based QLED Quantum Dots 625 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

InP-based QLED Quantum Dots 525 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

InP-based QLED Quantum Dots 625 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

ZnSe-based QLED Quantum Dots 455 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.125”

$1,777.00

Product 

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 5'', Thickness: 0.125''

CAS No.

 7787-32-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

175.32 g/mol

Melting Point

 1,368 °C

Boiling Point

2,260 °C

Density

 4.89 g/cm³

Product Codes

NCZ-2481K

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.250”

$1,777.00

Product 

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 5'', Thickness: 0.250''

CAS No.

 7787-32-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

175.32 g/mol

Melting Point

 1,368 °C

Boiling Point

2,260 °C

Density

 4.89 g/cm³

Product Codes

NCZ-2480K

Crystalline Boron (B) Micron Powder, Average Particle Size: -325 Mesh, Purity: 99+%

Price range: $105.00 through $1,776.00
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25 grams/95 € 100 grams/284 € 500 grams/975 € 1000 grams/1568 € Crystalline Boron (B) Micron Powder, Average Particle Size: -325 Mesh, Purity: 99+%
PRODUCT PROPERTIES
Molecular Weight 10.811
Appearance Black/Brown
Melting Point       2100oC / 3812oF
Boiling Point 2600oC / 4712oF
Density 2.34 cryst. g/cm3
Form Crystalline powder
Resistivity 1.5E12 μΩ-cm, 20 °C
Average Particle Size -325 Mesh
Storage temperature RT
Mohs Hardness @20oC 9.3
Applications Aerospace, Ceramic Material, Fuel Source, Nuclear
  Elemental Analysis (%)
B 99%
Fe 0.10 %
Al 0.10 %
Ca 0.09 %
Si 0.05 %
Cu 0.001 %
Sn 0.001 %
Mg 0.29 %
Mn 0.0006 %
  APPLICATIONS
  • A black - brown color powder used primarily for its thermal properties.
  • Corrosion inhibition: Boron compounds produced with boron nanopowders make it useful in anti-freeze, brake fluids, hydrolic systems, and other applications where ferrous materials need protection against corrosion.
  • Abrasive: boron can serve as a rugged, highly abrasive surface for any number of purposes. Combined with its thermal properties, this makes it highly effective for high speed cutting and similar tasks.
  • Photoelectric applications: Boron powder offers unique applications in photography, tanning, electrolytic condensation, fuel cells, and a host of other photoelectric fields.
  • Biocide: Borates in general work to kill a variety of insects and similar pests through simple physical destruction, making them one of the most universally effective pest control options.
  • Ignition: The thermal properties of boron powder make it an excellent ignition aid for any number of applications. This sees it used in charcoal briquettes, fuels, torches, and countless other applications.
 

Carbon Nanotube Sponges, Size: 20 mm x 20 mm, Thickness: 3-4 mm

Price range: $416.00 through $1,771.00
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Carbon Nanotube Sponges, Size: 20 mm x 20 mm, Thickness: 3-4 mm The carbon nanotube sponge structure is uniform and they possess good mechanical strength, good flexibility, high porosity and low density. They can be used as a purifying agent in order to absorb pollutants. These pollutants can be fertilizers, pesticides or pharmaceuticals found in water, energy storage materials, catalyst carriers or in high-efficiency composite materials.

High Purity Atomized Spherical Magnesium (Mg) Powder NGW40

Price range: $388.00 through $1,770.00
Select options This product has multiple variants. The options may be chosen on the product page
500 grams/345 €                      1 kg/468 €                      5 kg/1570 € 
Please contact us for quotes on larger quantities !!!

High Purity Atomized Spherical Magnesium (Mg) Powder NGW40

High purity atomized spherical magnesium powder is manufacturing by the centrifugal atomization technology that is melting minimum 99.8% purity magnesium and spraying the molten metal under the protection of an inert atmosphere. High purity atomized spherical magnesium powder is known with the outstanding features of high apparent density, high content of active magnesium, high fluidity, high stability, small particle size and small specific surface, and so on.

Technical Properties:

Particle Shape

Spherical Particle

Spherical Rate (%)

≥95

Apparent Density (g·cm-3 )

0.9 (min)

Bulk Density (g·cm-3 )

0.90 (min)

Liquidity (s·(50g)-1 )

78.6

Moisture Absorption (%)

0.01

Active Mg Content (%)

99.0 (min)

Impurity Content (%)

Moisture Content (%max)

0.08

HCl Undissolved Substance (%max)

0.047

Oil content (%max)

0.00

Fe (%max)

0.045

Mn (%max)

0.008

Zn (%max)

0.008

Cl (%max)

0.004

                   

Particle Size Distribution:

Particle Distributing

D50 (µm)

Granularity/µm

Percentage (%) Not more than

≥75

0.5

40±5

≥45

40.0

         

Applications:

High purity atomized spherical magnesium powder is widely used in the fields like aviation, national defense, composite materials, powder metallurgy, petrochemical catalyst, electronic coating, medicine, foods and new type functional materials and so on.  

Boron Doped Graphene Nanopowder (B/G)

Price range: $269.00 through $1,765.00
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100 gram: 269€ 5 grams: 1080€                          10 grams:

Boron Doped Graphene Nanopowder (B/G)

Price range: $269.00 through $1,765.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Boron Doped Graphene Nanopowder

  • Electro Catalyst
  • Field-effect Transistors
  • Sensors
  • Lithium-ion Batteries
  • Supercapacitors
  • 2D Materials
  • Energy Storage & Batteries
  • Fuel Cells
  • Nanomaterials Research
  • Semiconductors

Boron Sputtering Target B

Price range: $937.00 through $1,758.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Boron Sputtering Target B
CAS No. 7440-42-8
Appearance Solid, dark gray to black, hard and brittle material
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient B
Molecular Weight 10.81 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.34 g/cm³
Product Codes NCZ-108H

Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 300 ± 25 μm

Price range: $100.00 through $1,758.00
Select options This product has multiple variants. The options may be chosen on the product page
Quartz Wafer (X-Cut), Size: 4”, 2-Side Polished, Thickness: 300 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch) 4” Orientation

Quartz Wafer, (AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $100.00 through $1,758.00
Select options This product has multiple variants. The options may be chosen on the product page
Quartz Wafer (AT-Cut), Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch)

Quartz Wafer, (ST-Cut), Size: 4”, 1-Side Polished, Thickness: 625 ± 25 μm

Price range: $100.00 through $1,758.00
Select options This product has multiple variants. The options may be chosen on the product page
Quartz Wafer (ST-Cut), Size: 4”, 1-Side Polished, Thickness: 625 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch) 4”

Prime FZ-Si Wafer, Size: 3”, Orientation: (100), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 380 ± 25 μm

Price range: $103.95 through $1,751.40
Select options This product has multiple variants. The options may be chosen on the product page
Prime FZ-Si Wafer Size: 3”, Orientation: (100), None Doped, 2-Side Polished, Thickness: 380 ± 25 μm Technical Properties: Quality Prime

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”, Beige to White

$1,751.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lithium Phosphate (Li3PO4) Sputtering Targets, elastomer, Purity: 99.95%, Size: 4”, Thickness: 0.125”

$1,750.00

Product 

Lithium Phosphate (Li3PO4) Sputtering Targets, elastomer, Purity: 99.95%, Size: 4'', Thickness: 0.125''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

N/A

Density

 ~2.53 g/cm³

Product Codes

NCZ-2016K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 6”, Thickness: 0.250”

$1,750.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Spherical Nickel Base Alloy Micron Powder, Inconel 718 Powder, Size: 15-45 µm

Price range: $45.00 through $1,745.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

  • Components for liquid fueled rockets
  • Rings, casings and various formed sheet metal parts for aircraft
  • Land-based gas turnine engines
  • Cryogenic tankage
  • Fasteners and instrumentations parts

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

Price range: $83.00 through $1,740.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm Technical Properties: Quality Prime Materials Si+Si3N4 Size (inch)