Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

Name: Silicon Carbide Wafer (SiC-4H) - 4H, Size: 4'', Thickness: 350 μm, Mechanical Grade, 4H Area: 80% - Store
Availability: InStock

1 piece/495 €
5 pieces/2280 €

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Silicon Carbide Wafer (SiC-4H) – 4H

Size: 4”, Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Quality	Mechanical Grade
Size (inch)	4”
Thickness (μm)	350
Ra	≤1
4H area	80%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤25
Bow	≤30
Warp	≤45
OF Length	32.5±2
IF Length	18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced.

Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion.
Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC)
wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or
cubic zirconia.

While Silicon carbide (SiC-4H) – 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Price range: $545.00 through $2,514.00

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SKU: N/A Categories: Silicon Wafers & Semiconductor Wafers, 4", SILICON CARBIDE WAFER ( SIC-4H ) - 4H

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Research Use Only: Nanochemazone materials are intended strictly for research and development purposes in laboratory and industrial settings.
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