99.9% Neodymium Iron Boron Magnetic Powder (NdFeB)

Price range: $677.00 through $1,939.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99.9% Neodymium Iron Boron Magnetic Powder (NdFeB)
CAS No. N/A
Appearance Dark gray to black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 3-10µm (Size Can be customized),  Ask for other available size range.
Ingredient Nd₂Fe₁₄B
Molecular Weight 1,081.19 g/mol
Melting Point N/A
Boiling Point N/A
Density 4.8–5.1 g/cm³
Product Codes NCZ-231I

Gold (Au) Nanopowder/Nanoparticles, Purity: 99.99+%, Size: 14 nm

Price range: $450.00 through $1,930.00
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Gold (Au) Nanopowder/Nanoparticles

Purity: 99.99+%, Size: 14 nm

Technical Properties:

Bulk Density (g/cm3) 0,5-0,9
True Density (g/cm3) 19,32
Color red - purple
Shape spherical
Crystal Structure cubic
Tmelting (oC) 1063
Tboiling (oC) 2966
Average Particle Size (nm) 14
Elemental Analysis Au Pb Cd Ag Fe Cu As, Sb
99.95 0.005 0.003 0.002 0.002 0.009 0.002

Applications:

Gold nanoparticle is used as chemical, medical and biological reagents. It is a well known and frequently used material in electronics and cosmetics industry.

Rhodium (Rh) Nanopowder, 20nm, ≥99.99% (4N) Purity, 1g

$1,928.00
Product Rhodium (Rh) Nanopowder, 20nm, ≥99.99% (4N) Purity, 1g
CAS No. 7440-16-6
Appearance Dark gray to black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20nm (Size Can be customized),  Ask for other available size range.
Ingredient Rh
Molecular Weight 102.91 g/mol
Melting Point N/A
Boiling Point N/A
Density 12.41 g/cm³
Product Codes NCZ-506I

(-OH) Functionalized Short Length Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 48-78 nm

Price range: $65.00 through $1,927.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

Price range: $424.00 through $1,924.00
Select options This product has multiple variants. The options may be chosen on the product page
V 1 piece/385 € 5 pieces/1745 €            Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality  Testing Grade
Size (inch)  3”
Thickness (μm)  350
Ra  ≤0.3
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤25
Bow  ≤30
Warp  ≤35
OF Length  22.0±2.0
IF Length  11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.

Molybdenum Disulfide (MoS2) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$1,920.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Crystalline Boron (B) Micron Powder, Average Particle Size: 5 µm, Purity: 99+%

Price range: $111.00 through $1,920.00
Select options This product has multiple variants. The options may be chosen on the product page
25 grams/98 € 100 grams/295 € 500 grams/984 € 1000 grams/1695 € Crystalline Boron (B) Micron Powder, Average Particle Size: 5 Micron, Purity: 99+%
PRODUCT PROPERTIES
Molecular Weight 10.811
Appearance Black/Brown
Melting Point       2100oC / 3812oF
Boiling Point 2600oC / 4712oF
Density 2.34 cryst. g/cm3
Form Crystalline powder
Resistivity 1.5E12 μΩ-cm, 20 °C
Average Particle Size 5 micron
Storage temperature RT
Mohs Hardness @20oC 9.3
Applications Aerospace, Ceramic Material, Fuel Source, Nuclear
  Elemental Analysis (%)
B 99%
Fe 0.10 %
Al 0.10 %
Ca 0.09 %
Si 0.05 %
Cu 0.001 %
Sn 0.001 %
Mg 0.29 %
Mn 0.0006 %
  APPLICATIONS
  • A black - brown color powder used primarily for its thermal properties.
  • Corrosion inhibition: Boron compounds produced with boron nanopowders make it useful in anti-freeze, brake fluids, hydrolic systems, and other applications where ferrous materials need protection against corrosion.
  • Abrasive: boron can serve as a rugged, highly abrasive surface for any number of purposes. Combined with its thermal properties, this makes it highly effective for high speed cutting and similar tasks.
  • Photoelectric applications: Boron powder offers unique applications in photography, tanning, electrolytic condensation, fuel cells, and a host of other photoelectric fields.
  • Biocide: Borates in general work to kill a variety of insects and similar pests through simple physical destruction, making them one of the most universally effective pest control options.
  • Ignition: The thermal properties of boron powder make it an excellent ignition aid for any number of applications. This sees it used in charcoal briquettes, fuels, torches, and countless other applications.

Silicon (Si) Nanopowder for Battery Applications

Price range: $108.00 through $1,918.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/96 € 25 grams/195 €                       
100 grams/590 €                     
500 grams/1280 €                    
1000 grams/1690 €

Monolayer Graphene on SiO2/Si Substrate, Size: 4″

Price range: $435.00 through $1,918.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Graphene research; Supercapacitors; Catalyst; Solar energy; Graphene optoelectronics, plasmonics and nanophotonics; Graphene semiconductor chips; Conductive graphene film; Graphene computer memory; Biomaterials and Bioelectronics.

Chromium (III) Oxide (Cr2O3) 99.99% 4N Powder

Price range: $205.00 through $1,916.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Chromium (III) Oxide (Cr2O3) 99.99% 4N Powder
CAS No. 1308-38-9
Appearance Green
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–5µm (Size Can be customized),  Ask for other available size range.
Ingredient Cr2O3
Molecular Weight 151.99 g/mol
Melting Point 2,435 °C
Boiling Point N/A
Density 5.22 g/cm³
Product Codes NCZ-318I
 

(-OH) Functionalized Graphitized Multi Walled Carbon Nanotubes, Purity: > 99.99%, Outside Diameter: 28-48 nm

Price range: $69.00 through $1,913.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

(-OH) Functionalized Graphitized Multi Walled Carbon Nanotubes, Purity: > 99.99%, Outside Diameter: 48-78 nm

Price range: $64.00 through $1,913.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$1,911.00

Product 

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 6'', Thickness: 0.250''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

N/A

Density

 ~2.53 g/cm³

Product Codes

NCZ-2024K

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$1,908.00

Product 

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.125''

CAS No.

 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~233.19 g/mol

Melting Point

~1625 °C

Boiling Point

N/A

Density

 ~6.02 g/cm³

Product Codes

NCZ-2456K

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$1,908.00

Product 

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''

CAS No.

 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~233.19 g/mol

Melting Point

~1625 °C

Boiling Point

N/A

Density

 ~6.02 g/cm³

Product Codes

NCZ-2455K

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

$1,905.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$1,902.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2315K

(-OH) Functionalized Graphitized Multi Walled Carbon Nanotubes, Purity: > 99.99%, Outside Diameter: 18-28 nm

Price range: $63.00 through $1,901.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$1,899.00

Product 

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 6'', Thickness: 0.125''

CAS No.

 12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~233–300 g/mol (composition dependent)

Melting Point

 ~1625 °C (approximate)

Boiling Point

N/A

Density

~5.5–6.0 g/cm³ (depending on Ba:Sr ratio)

Product Codes

NCZ-2470K

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$1,899.00

Product 

Barium Strontium Titanate (BaO4SrTi) Sputtering Targets, elastomer, Purity: 99.99%, Size: 6'', Thickness: 0.250''

CAS No.

 12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~233–300 g/mol (composition dependent)

Melting Point

 ~1625 °C (approximate)

Boiling Point

N/A

Density

~5.5–6.0 g/cm³ (depending on Ba:Sr ratio)

Product Codes

NCZ-2469K

Silica aerogel powder (147602)

Price range: $385.00 through $1,895.00
Select options This product has multiple variants. The options may be chosen on the product page
Silica aerogel powder (147602) Specifications Diameter  <0.5mm Packing density  40-150kg/m3 Specific surface area  600-1000m2/g Porosity  95% Pore diameter  25-50nm Pore volume  40cm3/g Hydrophobicity  95% Thermal conductivity  ≤0.022W/m·K Applications Cold and heat insulation, water treatment, household appliances, gas adsorption Recommended Service temperature  -200-650°C
Product Codes- NCZ-2772K

Strontium Ruthenate (SrRuO3) Sputtering Target

$1,890.00

Product 

Strontium Ruthenate (SrRuO3) Sputtering Target

CAS No.

12169-14-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

236.63 g/mol

Melting Point

>1,800 °C

Boiling Point

N/A

Density

 6.97 g/cm³

Product Codes

NCZ-1377K

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$1,890.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

A chemical compound consisting of barium and fluorine, barium fluoride (BaF2) is a salt. It is a solid that has the potential to be a clear crystal. One chemical compound for the 10–20 µm wavelength infrared area is barium fluoride. Enamel, glazing frits, and aluminum metallurgy all use barium fluoride.

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”, Beige to White

$1,889.00

Product 

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250'', Beige to White

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

~4.23 g/cm³

Product Codes

NCZ-1428K

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

$1,882.00

Product 

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.250''

CAS No.

12626-81-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~231.5 g/mol

Melting Point

 ~1,300°C

Boiling Point

N/A

Density

 ~7.6 g/cm³

Product Codes

NCZ-2055K

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”, Beige to White

$1,875.00

Product 

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250'', Beige to White

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

~4.23 g/cm³

Product Codes

NCZ-1427K

ARTIFICIAL SEBUM

Price range: $375.00 through $1,875.00
Select options This product has multiple variants. The options may be chosen on the product page

Artificial Sebum Solution

SYNTHETIC SEBUM FORMULATION

Product Number: NCZ-APS-0012-20

Packaging: 100 mL to 1000 mL

NOTE: Custom pH formulations can be made in the pH range from 2.0 to 9.0. For custom component formulations please contact sales@nanochemazone.com for a quote.

Sebum stabilized solution is preserved with a fungicide and bactericide for two years of shelf life at room temperature. Artificial Sebum without stabilized known as non-stabilized sebum if this product is kept frozen and then it has a shelf life of one year.

Note: Custom formulations at varying pH (2-9) can be made as either the stabilized or non- stabilized solutions.

Artificial Sebum stabilized version has a preservative that prevents microbial growth and can then be stored at room temperature. The not stabilized version has no preservative and must be kept frozen until you intend to use it. You may need this version if you are testing a product that claims to prevent microbial growth or odor from perspiration. Our Artificial Sebum normally comes at pH 4.5, however, we can make it custom from pH 2.0 – 9.0.

Artificial Sebum Applications:

Sebum is an oily secretion produced by sebaceous glands, which spreads over the hair and skin for waterproofing purposes. Nanochemazone manufactures an artificial sebum formulation according to ASTM designation D4265-14 or D4265-98. It is ready-to-use and provides the reliability, reproducibility, and convenience needed for testing. This formulation can be used according to AATCC Standard Test Method 130-2010 for evaluating the efficacy of home laundry products and conditions to remove stains from fabric.

Contact us for Customization: sales@nanochemazone.com

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.125”

$1,871.00

Product 

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.125''

CAS No.

12626-81-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~303.1 g/mol

Melting Point

 ~1,250°C – 1,350°C

Boiling Point

N/A

Density

 ~7.75–8.0 g/cm³

Product Codes

NCZ-2058K

High Speed Homogenizer, 27.000 rpm

$1,868.75
1 piece/1868.75 € Please contact us for quotes on larger quantities !!! High Speed Homogeniser 27.000 rpm 10~2000 ml Mixing Capacity

Monolayer Graphene on SiO2/Si Substrate, Size: 4″

Price range: $423.00 through $1,864.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications

Graphene research; Supercapacitors; Catalyst; Solar energy; Graphene optoelectronics, plasmonics and nanophotonics; Graphene semiconductor chips; Conductive graphene film; Graphene computer memory; Biomaterials and Bioelectronics.

CR2450 Coin Cell Cases with 316SS (Positive+Negative Cases), Diameter: 24 mm, Height : 5 mm

Price range: $238.00 through $1,863.00
Select options This product has multiple variants. The options may be chosen on the product page
100 set:238€ 500 set: 1038€ 1000 set:1863€ Technical Properties: Diameter 24 mm Height 5 mm Material 316SS

CR2016 Coin Cell Cases with 316SS (Positive+Negative Cases), Diameter: 20 mm, Height : 1.6 mm

Price range: $238.00 through $1,863.00
Select options This product has multiple variants. The options may be chosen on the product page
100 set:238€ 500 set: 1038€ 1000 set:1863€ Technical Properties: Diameter 20 mm Height 1.6 mm Material 316SS

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Production Grade, 4H Area: 100%

Price range: $408.00 through $1,863.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/370 € 5 pieces/1690 €                 Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Quality  Production Grade
Size (inch)  3”
Thickness (μm)  350
Ra  ≤0.3
4H area  100%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤10
Warp  ≤25
OF Length  22.0±2.0
IF Length  11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
 

CR2325 Coin Cell Cases with 316SS (Positive+Negative Cases), Diameter: 23 mm, Height : 2.5 mm

Price range: $240.00 through $1,860.00
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100 set: 240€ 500 set: 1040€ 1000 set:1860€ Technical Properties: Diameter 23 mm Height 2.5 mm Material 316SS

Nickel Foil, Purity: 99.9+% , Thickness: 0.08mm, Width: 100mm

Price range: $415.00 through $1,860.00
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1 piece / 415 € 5 pieces / 1860 € Please contact us for quotes on larger quantities ! Nickel Foil,

Hexagonal Boron Nitride Nanotube Dia:<50nm, Length:5-20um, 99%

Price range: $106.00 through $1,860.00
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Hexagonal Boron Nitride Nanotube Dia:<50nm, Length:5-20um, 99% Product description Boron nitride nanotubes are formed by replacing the C atoms in CNTs with alternating B and N atoms, and do not change the spatial structure of CNTs. Compared with CNT, hexagonal BNNT with graphite-like structure has chemical stability and unique thermal, electrical and optical properties. BN has both high thermal conductivity and low electrical conductivity; it has good thermal shock resistance; even at a high temperature of 1000 °C or in harsh environments, BN is still quite stable and has excellent corrosion resistance; BN's The coefficient of friction is about twice that of graphite and does not change substantially with temperature. Although BNNT cannot be prepared in large quantities at present, due to its good strength, thermal stability and electrical properties, people have made some explorations on the application of BNNT and made certain progress. Compared with CNT, BNNT has better thermal stability, and theoretical calculations show that BNNT has higher defect generation energy, which is still positive under high stress, so it has higher yield resistance; in addition, it also It has higher thermal conductivity and the strength is also the highest among known insulating fibers. Therefore, BNNT as a mechanical reinforcement material will have more advantages than traditional fibers and CNT in terms of strength and oxidation resistance, and BNNT can also be combined with nano-ceramic fibers to form new fiber composite materials. These properties determine the broad application prospects of BN nanomaterials in the fields of nanoelectronics, electronic heat dissipation components, solid/liquid lubricants, nanocomposites and high-temperature structural components.   Performance characteristics Hexagonal boron nitride nanotubes are prepared by high-frequency plasma gas phase synthesis, and have excellent physical and chemical properties: high temperature resistance, oxidation resistance, chemical corrosion resistance, self-lubricating, good processability, high thermal conductivity, and good medium It is widely used in high-tech fields such as machinery, metallurgy, electronics, aerospace and so on. Applications Filling the high thermal conductivity and high stability boron nitride fiber filler into the polymer plastic system can effectively improve the low thermal conductivity and poor thermal stability of the composite material system. Thereby, the high temperature stability and oxidation resistance of the inorganic-organic polymer materials are effectively improved, and the working temperature of the packaged materials, such as LEDs, is effectively reduced, and the working time thereof is prolonged. CB-BNNT as a mechanical reinforcement material will have more advantages than traditional fibers and CNT in terms of strength and oxidation resistance, and CB-BNNT can also be combined with nano-ceramic fibers to form a new fiber composite material. These properties determine the broad application prospects of BN nanomaterials in the fields of nanoelectronics, electronic heat dissipation components, solid/liquid lubricants, nanocomposites and high-temperature structural components. Packaging and storage This product is packaged in an inert gas plastic bag, sealed and stored in a dry, cool environment. It should not be exposed to the air to prevent oxidation and agglomeration due to moisture, which will affect the dispersion performance and use effect.

99.99% 4N Purity Gallium Trinitrate Hydrate (Ga(NO3)3 · xH2O)

Price range: $231.00 through $1,859.00
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Product 99.99% 4N Purity Gallium Trinitrate Hydrate (Ga(NO3)3 · xH2O)
CAS No. 10115-40-1
Appearance White to off-white crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10–50µm (Size Can be customized),  Ask for other available size range.
Ingredient Ga(NO₃)₃ · xH₂O
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 2.4 g/cm³
Product Codes NCZ-249I

80nm Monoclinic Zirconium Dioxide ZrO2 Nanoparticles, >99.9% High Purity

Price range: $132.00 through $1,859.00
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Product 80nm Monoclinic Zirconium Dioxide ZrO2 Nanoparticles, >99.9% High Purity
CAS No. 1314-23-4
Appearance Fine white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 80nm (Size Can be customized),  Ask for other available size range.
Ingredient ZrO2
Molecular Weight 123.22 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.7–5.9 g/cm³
Product Codes NCZ-204I

50nm Monoclinic Zirconium Dioxide ZrO2 Nanoparticles, >99.9% High Purity

Price range: $132.00 through $1,859.00
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Product 50nm Monoclinic Zirconium Dioxide ZrO2 Nanoparticles, >99.9% High Purity
CAS No. 1314-23-4
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 50nm (Size Can be customized),  Ask for other available size range.
Ingredient ZrO2
Molecular Weight 123.22 g/mol
Melting Point 2,715 °C
Boiling Point N/A
Density 5.68 g/cm³
Product Codes NCZ-189I

4N (99.99%) Aluminum Fluoride (AlF3) Pieces (1-10mm) Evaporation Materials, 250g

Price range: $132.00 through $1,859.00
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Product 4N (99.99%) Aluminum Fluoride (AlF3) Pieces (1-10mm) Evaporation Materials, 250g
CAS No. 7784-18-1
Appearance White solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1-10mm (Size Can be customized),  Ask for other available size range.
Ingredient AlF3
Molecular Weight 123.22 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.68 g/cm³
Product Codes NCZ-165I
 

40nm Monoclinic Zirconium Dioxide ZrO2 Nanoparticles, >99.9% High Purity

Price range: $132.00 through $1,859.00
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Product 40nm Monoclinic Zirconium Dioxide ZrO2 Nanoparticles, >99.9% High Purity
CAS No. 1314-23-4
Appearance White or off-white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 40nm (Size Can be customized),  Ask for other available size range.
Ingredient ZrO₂
Molecular Weight 123.22 g/mol
Melting Point 2,715 °C
Boiling Point 4,300 °C
Density 5.68 g/cm³
Product Codes NCZ-164I

Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 450±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N Type)

Price range: $126.00 through $1,859.00
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1 piece/114€ 5 pieces/445€ 25 pieces/1675€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 2”, Single Side Polished, Thickness: 450± 25 μm, EPI-ready, Dopant: Silicon (N Type) Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  450± 25
Polished  Single Side
Dopant  Silicon (N Type)
Orientation  (100) =2 deg off toward<111A>± 0.5
Resistivity  ( 1.2-9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length  7±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.

Lead Zirconate Titanate (PZT) Nanopowder/Nanoparticles, Purity: 99.5+ %, Size: < 100 nm

Price range: $44.00 through $1,856.00
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5 grams/39 € 25 grams/110 €                        
100 grams/290 €                     
500 grams/980 €                    
1000 grams/1640 €
Please contact us for quotes on larger quantities !!! 

Lead Zirconate Titanate (PZT) Nanopowder/Nanoparticles

Purity: 99.5+ %, Size: < 100 nm

Technical Properties:

Purity: 99.5+%
Particle Size: <100 nm
CAS No: 12626-81-2  

Applications:

Lead Zirconate Titanate nanoparticles/nanopowder are commonly used in applications that require high temperatures and sensitivity. Lead Zirconate Titanate nanoparticles/nanopowder based materials are components of ultrasound transducers and ceramic capacitors, STM/AFM actuators. Lead Zirconate Titanate nanoparticles/nanopowder are also used in the manufacture of ceramic resonators for reference timing in electronic circuitry.

Single Layer Graphene Oxide, Purity: 99.5 %, Size: 1 nm

Price range: $186.00 through $1,856.00
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Single layer graphene oxide is a mono-atomic layer of highly oxidized carbon atoms, manufactured by chemical oxidation of graphite. Graphene oxide layers are about 1.1 ± 0.2 nm thick. Monolayer graphne oxide can be embedded in different ceramic or polymeric matrices to enhance electrical, thermal and mechanical properties. Thanks to its excellent properties of single-layer graphene oxide, it has been involved in many applications such as Graphene and polymers manufacture, water purification, flexible rechargeable battery electrode, optically transparent films, papers, sensors, nanocarriers for metal catalysis, anti-electrostatic additives and many more. We are committed to provide high quality single layer graphene oxide with competitive prices and fast shipping.

GeS2, Germanium (IV) Disulfide Powder, >99.99% Purity, 325 Mesh

Price range: $425.00 through $1,855.00
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Product GeS2, Germanium (IV) Disulfide Powder, >99.99% Purity, 325 Mesh
CAS No. 12240-15-2
Appearance Off-white to pale yellow
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 44µm (Size Can be customized),  Ask for other available size range.
Ingredient GeS2
Molecular Weight 137.7 g/mol
Melting Point 800 °C
Boiling Point N/A
Density 3.19 g/cm³
Product Codes NCZ-355I

Tantalum Sputtering Target Ta

Price range: $206.00 through $1,855.00
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Product Tantalum Sputtering Target Ta
CAS No. 7440-25-7
Appearance Gray Blue, Metallic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Ta
Molecular Weight 180.94788 g/mol
Melting Point 3,017 °C
Boiling Point N/A
Density 16.6 g/cm3
Product Codes NCZ-141H
 

Niobium Oxide (Nb2O5) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$1,850.00

Product 

Niobium Oxide (Nb2O5) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.125''

CAS No.

1313-96-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 265.81 g/mol

Melting Point

~1512 °C

Boiling Point

N/A

Density

 4.6 – 4.9 g/cm³

Product Codes

NCZ-1812K

Lithium Lanthanum Tantalum Zirconate (LLZTO), Size: 1-3 µm, Purity: ≥99.5

Price range: $123.00 through $1,850.00
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APPLICATIONS
Lithium Lanthanum Tantalum Zirconate is used as a solid electrolyte material for Li-based batteries because of its high Lithium ionic conductivity and chemical stability with respect to lithium as well as its stability at elevated temperatures.

(-COOH) Functionalized Graphitized Multi Walled Carbon Nanotubes, Purity: > 99.99 %, Outside Diameter: 48-78 nm

Price range: $73.00 through $1,850.00
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Applications:

There are numerous possible uses for multiwalled carbon nanotubes in various industries. Medicine, mechanics, electrical and electronic systems, chemistry, energy, and other fields are among these applications. Drug delivery, biosensors, CNT composites, catalysis, nanoprobes, and hydrogen storage are just a few of the applications for which it can be used. 7-lithium power cells 8 tubes for gas discharge, 10-supercapacitors, 11-transistors, 12 solar cells, and 9 flat panel displays 13-luminescence and 14-models

Lutetium Oxide (Lu2O3) Micron Powder, Purity: 99.99%, Size: 325 mesh

Price range: $119.00 through $1,850.00
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Applications:

Lutetium oxide is used as raw material for laser crystals. It is used in glass, ceramics, and phosphorus as an additive. It is also used as a catalyst in hydrogenation, polymerization, cracking, and alkylation.

Spherical Nickel Base Alloy Micron Powder, Inconel 625 Powder, Size: 10-25 µm

Price range: $62.00 through $1,850.00
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Applications:

  • Flare stacks
  • Ducting systems for ships
  • Advanced seawater structures
  • Chemical process facilities
  • Shroud rings for tribunes
  • Thrust-reverser systems for generators
  • Exhaust systems for jet engines
  • Aerospace industry

Magnesium Oxide (MgO) Sputtering Targets, indium, Purity: 99.95%, Size: 4”, Thickness: 0.125”

$1,849.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Silicon Carbide Wafer (SiC-4H)- 4H, Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 95%

Price range: $419.00 through $1,847.00
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1 piece/380  5 pieces/1675                            Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality Dummy Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤1
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤25
Warp  ≤35
OF Length  16±2
IF Length  8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Testing Grade, 4H Area: 80%

Price range: $419.00 through $1,847.00
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1 piece/380 € 5 pieces/1675 €                           Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'' , Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Quality  Testing Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤1
4H area  80%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤25
Bow  ≤30
Warp  ≤35
OF Length  16±2
IF Length  8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.

(-COOH) Functionalized Industrial Short Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 28-48 nm

Price range: $62.00 through $1,846.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates  

(-COOH) Functionalized Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 28-48 nm

Price range: $62.00 through $1,846.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

(-COOH) Functionalized Industrial Short Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 28-48 nm

Price range: $58.00 through $1,846.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Hydrothermal Synthesis Autoclave Reactor with PTFE Lined Vessel 500 ml

Price range: $423.00 through $1,845.00
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APPLICATIONs
  • Chemical synthesis
  • Synthesizing of nanoparticles
  • For cultured crystal growth
  • Polymerization reaction
  • Hydrothermal decomposition
  • Catalyst synthesis
  • Hydrothermal oxidation
  • Hydrothermal precipitation
  • Material Digester / digestion
  • Crystallization process
  • Dissolve of heavy metals, refractory material, organic chemicals etc.

Yttrium (Y) Micron Powder, Purity: 99.5 %, Size: 325 mesh

Price range: $36.00 through $1,845.00
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Applications:

Yttrium is transition metallic element with chemical properties similar to the lanthanide elements. It is not found free in nature it is found with other lanthanides elements. It is highly crystalline and is moderately stable in air. Yttrium has the highest thermodynamic affinity for oxygen of any element. It has the ability to form crystals with useful properties. Yttrium has many applications due to its properties. It is used in alloys to reduce the grain size and increase the strength of the metals. It also improves the workability, adds resistance to high-temperature recrystallization and enhances resistance to high temperature oxidation. Yttrium has applications in electronics. It is used in making liquid crystal display panels and in fluorescent lightning. It is used in the development of superconductors, ceramics, and special glasses. Yttrium has also applications in medicine. It is used in manufacturing of artificial joints and other prosthetic devices. Its radioactive isotopes are used in the treatment of cancer lymphoma and leukemia.   

(-OH) Functionalized Single Walled Carbon Nanotubes, Purity: > 92%, SSA: 370 m2/g, Dia: 1.0 nm

Price range: $120.00 through $1,845.00
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(-OH) Functionalized Single Walled Carbon Nanotubes

Purity: > 92%, SSA: 370 m2/g, Dia: 1.0 nm

Single walled carbon nanotubes (SWCNTs, SWNTs) comprise of one-atom-thick sheets of graphene that rolled up to form long hollow tubes. SWCNTs possess exceptional thermal, mechanical and electrical properties. These remarkable properties lead to advances in performance in a wide range of materials and devices. Single-walled carbon nanotubes are actively used in diverse area including energy storage, molecular electronics, nano mechanial devices, composites and bio-sensing. We supply (-OH) Functionalized Single Walled Carbon Nano Tubes to fulfill our customers' need with low prices and various options.