Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.250”

$683.00

Product 

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 1'', Thickness: 0.250''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

~158 °C (likely decomposition)

Density

 ~2.53 g/cm³

Product Codes

NCZ-2034K

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$683.00

Product 

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

 12070-08-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

59.89 g/mol

Melting Point

 ~3160 °C

Boiling Point

N/A

Density

4.93 g/cm³

Product Codes

NCZ-1612K

Magnesium carbonate trihydrate whisker(MgCO3·3H2O, ≥99%, L=30-50µm, D=0.2-0.5µm) (126665)

$682.00
Select options This product has multiple variants. The options may be chosen on the product page
Magnesium carbonate trihydrate whisker(MgCO3·3H2O, ≥99%, L=30-50µm, D=0.2-0.5µm) (126665)

     

MgO

30.16%

Length-Diameter ratio

50-100

Length/µm

30-50

Diameter/µm

0.2-0.5

 
Product Codes- NCZ-2753K

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.125”

$682.00

Product 

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 1'', Thickness: 0.125''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

 ~3.58 g/cm³

Product Codes

NCZ-1976K

Molybdenum Disulfide (MoS2) Sputtering Targets, indium, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$682.00

Product 

Molybdenum Disulfide (MoS2) Sputtering Targets, indium, Purity: 99.9%, Size: 1'', Thickness: 0.125''

CAS No.

 1317-33-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 160.07 g/mol

Melting Point

 ~1185 °C

Boiling Point

 ~4500 °C

Density

 ~5.06 g/cm³

Product Codes

NCZ-1908K

Carbon Nanotube Buckypaper with Metal 0.8%, Thickness: 28 µm, Diameter: 35-39 mm

Price range: $151.00 through $682.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Carbon Nanotubes are used in a variety of applications. Buckypapers with metals are strong and have good electrical conductivity. They can be used for the following purposes: 1-Transmission of electricity and heat. 2- super capacitors. 3-Shielding against electromagnetic interference. 4-Electrodes are used in fuel cells, supercapacitors, and batteries. 5-Extremely strong structures. 6-Medical equipment. 7-Displays with seven flat panels.

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

$681.00

Product 

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.250''

CAS No.

123273‑09‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~313.9 g/mol

Melting Point

 ~1,550 °C (approximate; ceramic decomposition likely above)

Boiling Point

N/A

Density

 ~5.3 g/cm³ @ room temp

Product Codes

NCZ-2149K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$681.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

58397-70-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~231.71 g/mol

Melting Point

~2,700–3,200 °C

Boiling Point

~4,500–5,000 °C

Density

~14.5–17.0 g/cm³

Product Codes

NCZ-1558K

Lanthanum Hexaboride Nanoparticles/ Nanopowder (LaB6, 99+%, 50-80 nm)

Price range: $233.00 through $681.00
Select options This product has multiple variants. The options may be chosen on the product page
$233/25g $394/50g $681/100g
Product Lanthanum Hexaboride Nanoparticles/ Nanopowder (LaB6, 99+%, 50-80 nm)
CAS No. 12008-21-8
Appearance Black powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 50-80nm (Size Can be customized),  Ask for other available size range.
Ingredient LaB6
Molecular Weight 203.78g/mol
Melting Point 2210°C
Boiling Point N/A
Density 4.72 g/cm³
Product Codes NCZ-115R
 

Lanthanum Hexaboride Nanoparticles/Nanopowder ( LaB6, 99+%, 50~80nm)

Price range: $233.00 through $681.00
Select options This product has multiple variants. The options may be chosen on the product page
$233/25g
$391/50g
$681/100g

Product 

Lanthanum Hexaboride Nanoparticles/Nanopowder ( LaB6, 99+%, 50~80nm)

CAS No.

12008-21-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 50~80nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 203.78 g/mol

Melting Point

~2,530 °C

Boiling Point

N/A

Density

~4.72 g/cm³

Product Codes

NCZ-1146K

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$681.00
 

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

(-COOH) Functionalized Industrial Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 8-15 nm

Price range: $65.00 through $681.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$680.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$680.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Multi Walled Carbon Nanotubes, Purity: > 95%, Outside Diameter: 30-50 nm

Price range: $37.00 through $680.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates  

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$679.00

Product 

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.125''

CAS No.

12009‑21‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

276.55 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

~5.52 g/cm³ (theoretical)

Product Codes

NCZ-2448K

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$679.00

Product 

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.

12009‑21‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

276.55 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

~5.52 g/cm³ (theoretical)

Product Codes

NCZ-2447K

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$679.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$678.00

Product 

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

 1304-76-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

465.96 g/mol

Melting Point

 ~817 °C

Boiling Point

N/A

Density

 ~8.9 g/cm³

Product Codes

NCZ-2410K

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$678.00

Product 

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

 1304-76-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

465.96 g/mol

Melting Point

 ~817 °C

Boiling Point

N/A

Density

 ~8.9 g/cm³

Product Codes

NCZ-2409K

Gadolinium (III) Fluoride, GdF3, 99.99% 4N High Purity Powder

$678.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Gadolinium (III) Fluoride, GdF3, 99.99% 4N High Purity Powder
CAS No. 13765-26-9
Appearance White crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 44–150µm (Size Can be customized),  Ask for other available size range.
Ingredient GdF3
Molecular Weight 214.25 g/mol
Melting Point N/A
Boiling Point N/A
Density 7.10 g/cm³
Product Codes NCZ-348I

Copper (Cu) Nanopowder/Nanoparticles, Purity: 99.95%, Size: 80-240 nm, Metal Basis

Price range: $57.00 through $678.00
Select options This product has multiple variants. The options may be chosen on the product page

Copper (Cu) Nanopowder/Nanoparticles

Purity: 99.95%, Size: 80-240 nm, Metal Basis

Technical Properties:

Bulk Density (g/cm3) 0,25
True Density (g/cm3) 8,9
Color reddish brown
Shape spherical
Crystal Structure cubic
Average Particle Size (nm) 80-240
Specific Surface Area (m2/g) 4,6
Elemental Analysis Cu Fe Ni Others
99.95 0.02 0.01 0.01

Properties, Storage and Cautions:

Copper nanoparticles are highly reactive and flammable, therefore it should be handled with care and rapid moves, vibrations should be avoided. Nanopowder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, nanopowder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.

99% (2N) Boron (B) Amorphous Powder, 100g

$677.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99% (2N) Boron (B) Amorphous Powder, 100g
CAS No. 7440-42-8
Appearance Black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100nm. (Size Can be customized),  Ask for other available size range.
Ingredient B
Molecular Weight 10.81  g/mol
Melting Point N/A
Boiling Point N/A
Density 2.34 g/cm³
Product Codes NCZ-209I

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$676.00

Product 

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.

12068-69-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

626.32 g/mol

Melting Point

620 °C

Boiling Point

N/A

Density

 6.50 g/cm³

Product Codes

NCZ-2499K

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

$676.00

Product 

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.125''

CAS No.

123273‑09‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~313.9 g/mol

Melting Point

 ~1,550 °C (approximate; ceramic decomposition likely above)

Boiling Point

N/A

Density

 ~5.3 g/cm³ @ room temp

Product Codes

NCZ-2150K

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$676.00

Product 

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1629K

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.250”

$675.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When etching anisotropy is high, sputter etching is the preferred method.

is required, and selectivity is unimportant. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$675.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$675.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Graphene NMP Dispersion, Purity: 99.5%, Graphene: 2,0 wt%

Price range: $112.00 through $675.00
Select options This product has multiple variants. The options may be chosen on the product page
Graphene NMP Dispersion, Purity: 99.5%, Graphene: 2,0 wt%
Graphene Purity (%) 99,5
Graphene Thickness (nm) 0,6-1,2
Diameter (µm) 2,0-12,0
Appearance Black Liquid
Concentration (wt%) 2,0 (mg/ml)
Specific Surface Area (m2/g) 600-1200
Elemental Analysis (%) C            O 99,6    <0,4
Surfactant                                                                                                           YES

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$674.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes at ~3652 °C (does not melt under normal pressure)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2337K

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$674.00

Product 

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.250''

CAS No.

 12138-09-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

247.97 g/mol

Melting Point

~1,250 °C

Boiling Point

N/A

Density

~7.5 g/cm³

Product Codes

NCZ-1576K

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$674.00

Product 

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.250''

CAS No.

1314‑62‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

181.88 g/mol

Melting Point

690 °C

Boiling Point

~1750 °C

Density

~3.35 g/cm³

Product Codes

NCZ-1535K

Molybdenum Disilicide (MoSi2) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

$674.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$674.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$673.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

 Sublimes around 3,600°C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2336K

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$673.00

Product 

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1633K

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.250”

$673.00

Product 

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.250''

CAS No.

 12070-08-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

59.89 g/mol

Melting Point

 ~3160 °C

Boiling Point

N/A

Density

4.93 g/cm³

Product Codes

NCZ-1613K

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

$673.00

Product 

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.250''

CAS No.

1314‑62‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

181.88 g/mol

Melting Point

690 °C

Boiling Point

~1750 °C

Density

~3.35 g/cm³

Product Codes

NCZ-1534K

High Purity Short MWNTs 95+%, 8~15nm

Price range: $97.00 through $673.00
Select options This product has multiple variants. The options may be chosen on the product page
$97/5g
$297/25g
$673/100g

Product 

High Purity Short MWNTs 95+%, 8~15nm

CAS No.

 7727-54-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

8~15nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

228.20 g/mol

Melting Point

 120 °C

Boiling Point

N/A

Density

 1.98 g/cm³

Product Codes

NCZ-1242K

Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$673.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Graphitized Multi Walled Carbon Nanotubes, Purity: > 99.99%, Outside Diameter: 18-28 nm

Price range: $59.00 through $673.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

There are numerous possible uses for multiwalled carbon nanotubes in various industries. These applications span a variety of fields, such as energy, chemistry, electronics, mechanics, and medicine. One can use it for medication delivery, two for biosensors, three for CNT composites, and four for catalysis. 5-hydrogen storage, 6-nanoprobes 7-lithium power cells 8 tubes for gas discharge, nine flat-panel monitors Ten supercapacitors and eleven transistors Photoluminescence, 12, solar cells, 13, and 14 templates  

(-COOH) Functionalized Industrial Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 8-15 nm

Price range: $64.00 through $673.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Titanium Boride (TiB2) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$672.00

Product 

Titanium Boride (TiB2) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.250''

CAS No.

 12045-63-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

69.49 g/mol

Melting Point

 ~3225 °C

Boiling Point

N/A

Density

 4.52 g/cm³

Product Codes

NCZ-1617K

Tantalum (Ta) Sputtering Targets, elastomer, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$672.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$672.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Nitride (Si3N4) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.125”, Dark Gray to Black

$672.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$672.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When etching anisotropy is high, sputter etching is the preferred method.

is required, and selectivity is unimportant. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Cobalt (Co) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

$672.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical element cobalt has the atomic number 27 and the symbol Co. Cobalt is a silver-gray, hard, and shiny metal. Because it is one of only three room temperature ferromagnets with unaxial symmetry and hence suitability for digital recording, cobalt is employed in the production of high-strength, wear-resistant alloys as well as magnetic recording.

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$672.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

High Purity (>95 wt%) Amino Single-walled Carbon Nanotube (Floating Catalyst Method), 1g

Price range: $605.00 through $671.00
Select options This product has multiple variants. The options may be chosen on the product page
Product High Purity (>95 wt%) Amino Single-walled Carbon Nanotube (Floating Catalyst Method), 1g
CAS No. 308068-56-6
Appearance Black to dark gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–2 nm (Size Can be customized),  Ask for other available size range.
Ingredient (C)x–(NH₂)y
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 0.03–0.1 g/cm³
Product Codes NCZ-384I
 

99.999% 5N Germanium (Ge) Pieces Evaporation Materials, Size 10-13 mm

$671.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99.999% 5N Germanium (Ge) Pieces Evaporation Materials, Size 10-13 mm
CAS No. 7440-56-4
Appearance Grayish-white, lustrous, brittle metalloid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10-13mm (Size Can be customized),  Ask for other available size range.
Ingredient Ge
Molecular Weight 72.63 g/mol
Melting Point 938.3 °C
Boiling Point 2833 °C
Density 5.323 g/cm³
Product Codes NCZ-261I
 

Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$671.00

Product 

Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

1314‑62‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

181.88 g/mol

Melting Point

690 °C

Boiling Point

~1750 °C

Density

~3.35 g/cm³

Product Codes

NCZ-1533K

Cobalt (Co) Sputtering Targets, indium, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$670.00

Product 

Cobalt (Co) Sputtering Targets, indium, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

7440‑48‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

58.93 g/mol (cobalt atomic weight)

Melting Point

~1,495 °C

Boiling Point

~2,870–2,927 °C

Density

~8.9 g/cm³

Product Codes

NCZ-2284K

Manganese (Mn) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$670.00

Product 

Manganese (Mn) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

 7439-96-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

54.93804 g/mol

Melting Point

 1,246 °C

Boiling Point

 2,061 °C

Density

 7.21 g/cm³

Product Codes

NCZ-1951K

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$669.00

Product 

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

233.19 g/mol

Melting Point

~1625 °C

Boiling Point

N/A

Density

 ~6.02 g/cm³

Product Codes

NCZ-2463K

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$669.00

Product 

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 1'', Thickness: 0.125''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2379K

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$669.00

Product 

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

• Indium Oxide (In₂O₃): 1312-43-2 • Tin Oxide (SnO₂): 18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Approx. 292.6 g/mol (based on 90:10 wt% In₂O₃:SnO₂ blend)

Melting Point

 ~1,800 °C (sintered ceramic composite; no sharp melting point)

Boiling Point

N/A

Density

 ~7.15 g/cm³

Product Codes

NCZ-2207K

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$669.00

Product 

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''

CAS No.

1317‑61‑9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 231.6 g/mol

Melting Point

~1,597 °C

Boiling Point

 ~2,623 °C (material may decompose before boiling)

Density

 ~5.17 g/cm³ (sintered target)

Product Codes

NCZ-2176K

Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$669.00

Product 

Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.125''

CAS No.

12031-63-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 147.85 g/mol

Melting Point

~1,240–1,257 °C

Boiling Point

N/A

Density

~4.30 g/cm³ (ceramic); up to 4.65 g/cm³ (crystal)

Product Codes

NCZ-2042K