Manganese (Mn) Sputtering Targets, indium, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$742.00

Product 

Manganese (Mn) Sputtering Targets, indium, Purity: 99.95%, Size: 2'', Thickness: 0.125''

CAS No.

 7439-96-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

54.94 g/mol

Melting Point

 1,246 °C

Boiling Point

 2,061 °C

Density

 7.21 g/cm³

Product Codes

NCZ-1943K

Graphene Oxide, 2-5 Layer, Dia: 4,5 µm, SA: 420 m2/gr

Price range: $75.00 through $742.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Graphene Oxide

  • Composite
  • Thermal management and heat spreading
  • Graphene-polymer composite materials
  • Graphene Oxide paper
  • Transparent and conductive graphene oxide coatings
  • Solar cells
  • Supercapacitors graphene oxide
  • Low permeability materials
  • High-Barrier packaging
  • Electro-static Dissipation Graphene Oxide (ESD) films
  • Support for metallic catalysts
  • Chemical-bio  graphene oxide sensors
  • Multifunctional materials based on Graphene
  • Graphene Research

Lanthanum Aluminate Sputtering Target LaAlO3

$741.00
Product Lanthanum Aluminate Sputtering Target LaAlO3
CAS No. 12003-65-5
Appearance Dense, dark-colored ceramic material
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient LaAlO3
Molecular Weight 213.89 g/mol
Melting Point N/A
Boiling Point N/A
Density 6.52 g/cm3
Product Codes NCZ-124H

Aluminum Sputtering Target

Price range: $147.00 through $741.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Aluminum Sputtering Target
CAS No. 7429-90-5
Appearance Solid, metallic, silvery-white to gray
Purity ≥99%,  ≥99.9%,  ≥95% (Other purities are also available)
APS <100 µm (Size Can be customized),  Ask for other available size range.
Ingredient Al
Molecular Weight 26.98 g/mol
Melting Point 660.3 °C
Boiling Point 2,470 °C
Density 2.70 g/cm³
Product Codes NCZ-102H

Iron Oxide (Fe3O4) Sputtering Targets, indium, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$741.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Hydroxyapatite Microsphere(Ca10(PO4)6(OH)2, Spherical, 15-60um, D50=35um, Medical grade) (827982)

$740.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Hydroxyapatite Microsphere(Ca10(PO4)6(OH)2, Spherical, 15-60um, D50=35um, Medical grade) (827982)

CAS No.

1306‑06‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 <15 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~1004.7 g/mol

Melting Point

~1650–1670 °C

Boiling Point

N/A

Density

 ~3.16 g/cm³

Product Codes

NCZ-2604K

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$740.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$740.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Dummy CZ-Si Wafer, Size: 6”, Orientation: (100), Boron Doped, Resistivity: 5-10 (ohm.cm), 1-Side Polished, Thickness: 675 ± 25 μm

Price range: $64.00 through $740.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/58 € 5 pieces/190 € 25 pieces/740 €   Please ask for amount of stock before placing an order on Wafer Products Please contact us for quotes on larger quantities !!!

Dummy CZ-Si Wafer

Size: 6”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 675 ± 25 μm

Technical Properties:

Quality Dummy
Materials CZ-Si
Size (inch) 6”
Orientation (100)
Coating  
Thickness (μm) 675 ± 25 μm
Doping Boron
Resistivity (ohm.cm) 5-10
Polished One Side
Dummy is a grade of wafers, which is also referred as “test wafer” a grade lower than prime. Dummy CZ Si wafers are often doped with arsenic. Test grade wafers are high quality but have less stringent properties than prime grade wafers, usually failing for one or more of the Semiconductor Equipment and Materials International (SEMI) standards. Test grade wafers are often used in applications that require a large quantity of wafers for equipment and fabrication testing. Even if you are doing very high end R&D work it is much more cost effective to develop a process using test wafers and then do the final checks using Prime or Epi-Prime wafers.

Gallium Oxide (Beta Ga2O3) Powder, 99.999% (5N) (Metal Basis), High Purity

$739.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Gallium Oxide (Beta Ga2O3) Powder, 99.999% (5N) (Metal Basis), High Purity
CAS No. 12024-21-4
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Ga2O3
Molecular Weight 187.44 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.88 g/cm³
Product Codes NCZ-352I
 

Tungsten (W) Sputtering Targets, elastomer, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$739.00

Product 

Tungsten (W) Sputtering Targets, elastomer, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

 7440-33-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 183.84 g/mol

Melting Point

3,410 °C

Boiling Point

5,900 °C

Density

19.25 g/cm³

Product Codes

NCZ-1583K

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$738.00

Product 

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2391K

Borosilicate Wafer, Size: 4”, 1-Side polished, Thickness: 1000 ± 20 μm

Price range: $64.00 through $738.00
Select options This product has multiple variants. The options may be chosen on the product page
Boroslicate Wafer Size: 4”, 1-Side polished, Thickness: 1000 ± 20 μm Technical Properties: Materials Borosilicate Size (inch) 4” Orientation Coating

Ti3C2Tx MXene Few-Layer Nanoflakes

Price range: $348.00 through $737.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Ti3C2Tx MXene Few-Layer Nanoflakes
CAS No. N/A
Appearance Black or dark gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 0.5–5µm (Size Can be customized),  Ask for other available size range.
Ingredient Ti₃C₂Tₓ,
Molecular Weight 195.88 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.5–3.2 g/cm³
Product Codes NCZ-560I
 

Praseodymium Fluoride (PrF3) 99% 2N

$737.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Praseodymium Fluoride (PrF3) 99% 2N
CAS No. 13709-46-1
Appearance Pale green crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–10µm (Size Can be customized),  Ask for other available size range.
Ingredient PrF3
Molecular Weight 209.90 g/mol
Melting Point N/A
Boiling Point N/A
Density 6.55 g/cm³
Product Codes NCZ-502I

3N5 (99.95%) Tantalum (Ta) Pellets Evaporation Materials

Price range: $176.00 through $737.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 3N5 (99.95%) Tantalum (Ta) Pellets Evaporation Materials
CAS No. 7440-25-7
Appearance Gray Blue, Metallic 
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 3mm (Size Can be customized),  Ask for other available size range.
Ingredient Ta
Molecular Weight 180.95 g/mol
Melting Point 3,017°C
Boiling Point N/A
Density 16.6 g/cm³
Product Codes NCZ-118E

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$736.00

Product 

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

114.82 g/mol

Melting Point

 156.6 °C

Boiling Point

 2,072 °C

Density

 7.31 g/cm³

Product Codes

NCZ-2224K

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$735.00

Product 

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2378K

Teflon (PTFE) Sputtering Target, 99.9% Purity

Price range: $376.00 through $735.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Teflon (PTFE) Sputtering Target, 99.9% Purity
CAS No. 9002-84-0
Appearance Solid white, slightly opaque disk
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient (C₂F₄)ₙ
Molecular Weight 100.01 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.2 g/cm³
Product Codes NCZ-142H

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$735.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Barium (Ba) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$735.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

A Block S, Group 2, Period 6 element with an atomic weight of 137.27, barium has the atomic symbol Ba and atomic number 56. One of the alkaline-earth metals is barium. Electronics can be plated using barium sputtering targets. Barium is beneficial for sputtering applications because of its good electrical characteristics. Barium sputtering targets can be utilized for semiconductors. Barium for flat panel screens

Barium (Ba) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

$735.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

A Block S, Group 2, Period 6 element with an atomic weight of 137.27, barium has the atomic symbol Ba and atomic number 56. Barium is a mineral that  an alkaline-earth metal member. Electronics can be plated using barium sputtering targets. Barium is beneficial for sputtering applications because of its good electrical characteristics. Barium sputtering targets can be utilized for semiconductors. Barium sputtering targets will work well for flat panel displays. Barium can be combined with other metals, such as titanium and strontium, to create alloys with more specialized qualities.

(-OH) Functionalized Double Walled Carbon Nanotubes, Purity: > 65%

Price range: $76.00 through $735.00
Select options This product has multiple variants. The options may be chosen on the product page

(-OH) Functionalized Double Walled Carbon Nanotubes

Purity: > 65%, Length: 48 µm, black

Double walled carbon nanotubes are especial class of carbon nanotubes, comprise of two nanotubes placed inside one another. Varying degrees of interaction between the two tubes due to the differences in the diameter of the tubes results in unique and interesting optical, mechanical and electronic properties. DWCNTs can be applied in many different areas such as emission displays (FEDs) and field emission transistors (FETs) whereby their impressive properties. For applications requiring the highest quality, we offer Double Walled Carbon Nano Tubes with low prices. 

Poly(Lactide-co-trimethylene carbonate)(PLTMC75/25) (613989)

$734.00
Poly(Lactide-co-trimethylene carbonate)(PLTMC75/25) (613989)
Grade Description Inherent viscosity (dL/g) Weight average molecular weight (x10000)
PLTMC75-10 PLTMC75/25 0.5-1.0 5-12
PLTMC75-15 PLTMC75/25 1.0-1.5 12-20
PLTMC75-20 PLTMC75/25 1.5-2.0 20-30
Product Codes- NCZ-2648K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$734.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

90% In₂O₃ (277.64 g/mol), 10% ZnO (81.38 g/mol) → ~260–270 g/mol (estimated)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2194K

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$732.00

Product 

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

101.96 g/mol

Melting Point

~2,072 °C

Boiling Point

~2,977 °C

Density

~3.97–3.98 g/cm³

Product Codes

NCZ-2540K

Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$732.00

Product 

Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

ZnO: 1314-13-2 Al₂O₃: 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

ZnO + Al₂O₃ (AZO)(black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

ZnO: 81.38 g/mol Al₂O₃: 101.96 g/mol

Melting Point

~1975 °C

Boiling Point

N/A

Density

~5.6 g/cm³

Product Codes

NCZ-1485K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

$732.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$732.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon Nanotubes Thermal Radiation Coating Dispersion

Price range: $62.00 through $731.00
Select options This product has multiple variants. The options may be chosen on the product page
30 ml/57 € 60 ml/97 € 120 ml/165 € 500 ml/408 € 1000 ml/663 €      
Please contact us for quotes on larger quantities !!!

Carbon Nanotubes Thermal Radiation Coating Dispersion

Technical Properties:

Film-forming Resin Coating Waterborne Polyurethane
CNT Content 4 wt%
Paint Dry Condition (°C) 75-85
Recommended Coating Thickness (um) 5.0-10.0
Emissivity Coating (%) 0.96-0.98
Coating Surface Resistivity (Ω) 104-106
Thermal Conductivity (W/m.K) 1.4-2.0
Coating Hardness HB
Coating adhesion (level) 5B

Applications:

Carbon nanotubes are one of the best thermal conductivity materials. They can form very thin coatings with very small thermal resistance. Carbon nanotubes thermal radiation coating dispersion can be applied to copper foil, aluminum plate, LED lamp base, and electrical enclosure cooling.  

Graphene Sheet, Size: 29 cm x 29 cm, Thickness: 35 µm, Highly Conductive

Price range: $64.00 through $731.00
Select options This product has multiple variants. The options may be chosen on the product page
Graphene sheets are essentially the finest materials in the world. Graphene sheet is a one-atom-thick planar sheet of carbon iotas which are intensively packed in a hexagonal lattice structure. Graphene sheets show high electrical conductance at room temperatures. They are used as fillers for the improvement of electrical and mechanical properties in composite materials. Graphene sheets have a vital importance for applications in biomaterials, biosensors, biomedical devices and drug delivery. Our company sells Graphene Sheet with low prices and high quality.

Molybdenum Disilicide (MoSi2) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.250”

$730.00

Product 

Molybdenum Disilicide (MoSi2) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.250''

CAS No.

12136-78-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

152.11 g/mol

Melting Point

 ~2030 °C

Boiling Point

 ~2300 °C to 2500 °C

Density

~6.26 g/cm³

Product Codes

NCZ-1924K

Molybdenum Disulfide (MoS2) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$730.00

Product 

Molybdenum Disulfide (MoS2) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

CAS No.

 1317-33-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 160.07 g/mol

Melting Point

 ~1185 °C

Boiling Point

 ~4500 °C

Density

 ~5.06 g/cm³

Product Codes

NCZ-1914K

Molybdenum Disulfide (MoS2) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$730.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$730.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon Nanotubes Thermal Radiation Coating Dispersion

Price range: $63.00 through $730.00
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Carbon Nanotubes Thermal Radiation Coating Dispersion Technical Properties: Film-forming Resin Coating Waterborne Polyurethane CNT Content 4 wt% Paint Dry Condition

Carbon Nanotubes Thermal Radiation Coating Dispersion

Price range: $63.00 through $730.00
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Applications:

Carbon nanotubes are one of the best thermal conductivity materials. They can form very thin coatings with very small thermal resistance. Carbon nanotubes thermal radiation coating dispersion can be applied to copper foil, aluminum plate, LED lamp base, and electrical enclosure cooling.

Yttrium (Y) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$729.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

(-OH) Functionalized Single Walled Carbon Nanotubes, Purity: > 65%

Price range: $62.00 through $729.00
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Applications:

Single Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in drug delivery, biosensors, CNT composites, catalysis, nanoprobes, hydrogen storage, lithium batteries, gas-discharge tubes, flat panel displays, supercapacitors, transistors, solar cells, photoluminescence, templates

Cerium hexaboride(CeB6, 99.9%, 360 mesh) (585927)

$728.00
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Cerium hexaboride(CeB6, 99.9%, 360 mesh) (585927)
Product Codes- NCZ-2700K

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2”, Thickness: 0.125”

$728.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2'', Thickness: 0.125''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2559K

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$728.00

Product 

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~233.19 g/mol

Melting Point

~1625 °C

Boiling Point

N/A

Density

 ~6.02 g/cm³

Product Codes

NCZ-2462K

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$728.00

Product 

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.250''

CAS No.

 409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 40.10 g/mol

Melting Point

~2,700 °C

Boiling Point

N/A

Density

~3.21 g/cm³

Product Codes

NCZ-1725K

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

$728.00

Product 

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.250''

CAS No.

 409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 40.10 g/mol

Melting Point

~2,700 °C

Boiling Point

N/A

Density

~3.21 g/cm³

Product Codes

NCZ-1724K

Silicon Nitride (Si3N4) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”, Dark Gray to Black

$728.00

Product 

Silicon Nitride (Si3N4) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.250'', Dark Gray to Black

CAS No.

 12033-89-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 140.28 g/mol

Melting Point

 ~1900 °C

Boiling Point

N/A

Density

~3.2 g/cm³

Product Codes

NCZ-1695K

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$727.00

Product 

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

1314-98-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 (ZnS) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

97.45 g/mol

Melting Point

~1700 °C

Boiling Point

N/A

Density

 4.09 g/cm³

Product Codes

NCZ-1505K

Zinc Oxide with Alumina (ZnO/Al2O3) Sputtering Target

Price range: $217.00 through $727.00
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Product 

Zinc Oxide with Alumina (ZnO/Al2O3) Sputtering Target

CAS No.

1314-13-2 (ZnO) / 1344-28-1 (Al₂O₃)

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

81–90 g/mol

Melting Point

~1,975 °C (ZnO), ~2,050 °C (Al₂O₃)

Boiling Point

N/A

Density

~5.6 g/cm³

Product Codes

NCZ-1332K

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$727.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

A chemical compound consisting of barium and fluorine, barium fluoride (BaF2) is a salt. It is a solid that has the potential to be a clear crystal. One chemical compound for the 10–20 µm wavelength infrared area is barium fluoride. Enamel, glazing frits, and aluminum metallurgy all use barium fluoride.

Prime CZ-Si Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 5-10 (ohm.cm), 2-Side Polished, Thickness: 360 ± 10 μm

Price range: $43.00 through $727.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/39 € 5 pieces/145 € 25 pieces/650 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 3”, Orientation: (100), Boron Doped, 2-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 3”
Orientation (100)
Coating  
Thickness (μm) 360 ± 10
Doping Boron
Resistivity (ohm.cm) 5-10
Polished Double Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.

Lithium Nickel Cobalt Oxide (LiNi(1-x)CoxO2) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$726.00

Product 

Lithium Nickel Cobalt Oxide (LiNi(1-x)CoxO2) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

113066-89-0 (commonly used for LiNi₀.₈Co₀.₂O₂)

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~365.38 g/mol (for LiNi₀.₈Co₀.₂O₂)

Melting Point

 >1000 °C (approximate; exact point varies slightly with composition)

Boiling Point

N/A

Density

 ~4.6–4.8 g/cm³ (theoretical)

Product Codes

NCZ-2043K

High Purity 99.9wt% Hollow Mesoporous Silica Solution (Spherical)

Price range: $406.00 through $726.00
Select options This product has multiple variants. The options may be chosen on the product page
Product High Purity 99.9wt% Hollow Mesoporous Silica Solution (Spherical)
CAS No. 7631-86-9
Appearance White, opaque solution
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 2-50nm (Size Can be customized),  Ask for other available size range.
Ingredient SiO₂
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-403I

C3N Quantum Dot Powder, 50mg

$726.00
Product C3N Quantum Dot Powder, 50mg
CAS No. N/A
Appearance Black to dark brown
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 13–33nm (Size Can be customized),  Ask for other available size range.
Ingredient C3N
Molecular Weight 10.81 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-301I

Niobium Carbide (Nb4C3Tx) MXene Multilayer Nanoflakes, 1g

$725.00
Product Niobium Carbide (Nb4C3Tx) MXene Multilayer Nanoflakes, 1g
CAS No. N/A
Appearance Dark gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–5µm (Size Can be customized),  Ask for other available size range.
Ingredient Nb4C3Tx
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-482I

Silicon Nanoparticles / Nanopowder ( Si, 98.5% 50 nm)

Price range: $305.00 through $725.00
Select options This product has multiple variants. The options may be chosen on the product page
$305/25g
$725/100g

Product 

Silicon Nanoparticles / Nanopowder ( Si, 98.5% 50 nm)

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

50 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

3,265 °C

Density

~2.33 g/cm³

Product Codes

NCZ-1071K

Prime CZ-Si Wafer, Size: 3”, Orientation: (100), Phosphor Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 625±25um

Price range: $42.00 through $725.00
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Prime CZ-Si Wafer Size: 3”, Orientation: (100), Phosphor Doped, 1-Side Polished Technical Properties: Quality Prime Materials CZ-Si Size (inch) 3”

Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2-Side Polished, Thickness: 525 ± 25 μm

Price range: $43.00 through $725.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime CZ-Si Wafer Size: 4”, Orientation: (100), Boron Doped, 2-Side Polished Technical Properties: Quality Prime Materials CZ-Si Size (inch) 4”

Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm

Price range: $43.00 through $725.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime CZ-Si Wafer Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished Technical Properties: Quality Prime Materials CZ-Si Size (inch) 4”

Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm

Price range: $43.00 through $725.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime CZ-Si Wafer Size: 4”, Orientation: (100), Phosphor Doped, 1-Side Polished Technical Properties: Quality Prime Materials CZ-Si Size (inch) 4”

Prime CZ-Si Wafer, Size: 4”, Orientation: (110), Boron Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm

Price range: $43.00 through $725.00
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Prime CZ-Si Wafer Size: 4”, Orientation: (110), Boron Doped, 1-Side Polished Technical Properties: Quality Prime Materials CZ-Si Size (inch) 4”

Aligned Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 8-18 nm, Length 9-14 µm

Price range: $30.00 through $725.00
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Applications:

CNTs are bundled together to create aligned MWCNTs. They are arranged in a single direction, parallel to the bundle axis, and near to one another. Aligned MWCNTs exhibit good dispersibility and great electrical conductivity. There are numerous possible uses for aligned MWCNTs in different industries. Medicine, mechanics, electric-electronics, chemistry, energy, and other fields are among these uses. Drug delivery, biosensors, CNT composites, catalysis, nanoprobes, and hydrogen storage are just a few applications for it. seven lithium batteries, tubes for 8 gas discharges, the nine flat panel displays, 10-supercapacitors, 11-transistors, solar cells (12), photoluminescence (13), and templates (14).