Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$669.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$669.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$669.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target. There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$669.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.125”

$668.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1635K

Zinc Oxide (ZnO) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$668.00

Product 

Zinc Oxide (ZnO) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

1314‑13‑2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

ZnO (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

81.38 g/mol

Melting Point

~1975 °C

Boiling Point

~2360 °C

Density

 ~5.61 g/cm³

Product Codes

NCZ-1446K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$668.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

117944‑65‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

InZnO (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~140.8 g/mol

Melting Point

~1900–1920 °C

Boiling Point

N/A

Density

 ~6.0–6.1 g/cm³

Product Codes

NCZ-1408K

Tantalum Oxide (Ta2O5) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$668.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$668.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

With the chemical formula Al2O3, aluminum oxide is a compound made of aluminum and oxygen. Because of its high melting point, Al2O3 is useful as a refractory material and as an abrasive due to its hardness, as well as for the production of aluminum metal.

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$667.00

Product 

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

~158 °C (likely decomposition)

Density

 ~2.53 g/cm³

Product Codes

NCZ-2031K

Ytterbium Oxide (Yb2O3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$667.00

Product 

Ytterbium Oxide (Yb2O3) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

1314-37-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

394.08 g/mol

Melting Point

2346 °C

Boiling Point

4127 °C

Density

 9.17 g/cm³

Product Codes

NCZ-1524K

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$667.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.125”

$666.00

Product 

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.125''

CAS No.

7440-10-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 140.91 g/mol

Melting Point

931 °C

Boiling Point

 3520 °C

Density

 6.77 g/cm³

Product Codes

NCZ-1785K

Zinc Oxide (ZnO) with Alumina Sputtering Targets, indium, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$666.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel Oxide (NiO) Sputtering Targets, Purity: 99.995%, Size:2”, Thickness: 0.125”

$666.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel Oxide (NiO) Sputtering Targets, Purity: 99.995%, Size:2”, Thickness: 0.125”

$666.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel Oxide (NiO) Sputtering Targets, Purity: 99.9%, Size:1”, Thickness: 0.250”

$664.00

Product 

Nickel Oxide (NiO) Sputtering Targets, Purity: 99.995%, Size:1'', Thickness: 0.250''

CAS No.

1313-99-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~3–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

74.69 g/mol

Melting Point

1,950 °C

Boiling Point

 2,730 °C

Density

 6.67 g/cm³

Product Codes

NCZ-1839K

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$664.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$664.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Molybdenum Oxide (MoO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$664.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$664.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Graphene Water Dispersion, Purity: 99.5%, Black Liquid, Graphene: 2 wt%

Price range: $107.00 through $664.00
Select options This product has multiple variants. The options may be chosen on the product page
Graphene Water Dispersion, Purity: 99.5%, Black Liquid, Graphene: 2 wt%
Graphene Purity (%) 99,5
Graphene Thickness (nm) 0,6-1,2
Diameter (µm) 2,0-12,0
Appearance Black Liquid
Concentration (wt%)  2 (mg/ml)
Specific Surface Area (m2/g) 600-1200
Elemental Analysis (%) C            O 99,6    <0,4
Surfactant                                                                                                           YES

Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 48-78 nm

Price range: $30.00 through $664.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

$663.00

Product 

Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.250''

CAS No.

7440-33-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 183.84 g/mol

Melting Point

3422 °C

Boiling Point

 5555 °C

Density

19.25 g/cm³

Product Codes

NCZ-1586K

Lithium Cobalt Oxide (LiCoO2) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$663.00

Product 

Lithium Cobalt Oxide (LiCoO2) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''

CAS No.

12190‑79‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

LiCoO₂  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

97.87 g/mol

Melting Point

~1100 °C¹

Boiling Point

N/A

Density

~5.05 g/cm³²

Product Codes

NCZ-1407K

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$662.00

Product 

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

114.82 g/mol

Melting Point

 156.6 °C

Boiling Point

 2,072 °C

Density

 7.31 g/cm³

Product Codes

NCZ-2221K

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, indium, Purity: 99.995%, Size: 4”, Thickness: 0.125”

$662.00

Product 

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, indium, Purity: 99.995%, Size: 4'', Thickness: 0.125''

CAS No.

60676-86-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

60.08 g/mol

Melting Point

~1715 °C

Boiling Point

~2230 °C

Density

~2.20 g/cm³

Product Codes

NCZ-1706K

Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$662.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Chromium (Cr) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$661.00

Product 

Chromium (Cr) Sputtering Targets, Purity: 99.95%, Size: 6'', Thickness: 0.250''

CAS No.

7440‑47‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 51.9961 g/mol

Melting Point

 1,857 °C

Boiling Point

 2,672 °C

Density

 7.14 g/cm³

Product Codes

NCZ-2310K

Titanium Boride (TiB2) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.250”

$661.00

Product 

Titanium Boride (TiB2) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.250''

CAS No.

 12045-63-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

69.49 g/mol

Melting Point

 ~3225 °C

Boiling Point

N/A

Density

 4.52 g/cm³

Product Codes

NCZ-1619K

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5%, Size: 6”, Thickness: 0.125”

$660.00

Product 

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5%, Size: 6'', Thickness: 0.125''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2383K

99.5% 50-100nm Ferroferric Oxide Fe3O4 Nanoparticles

Price range: $363.00 through $660.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99.5% 50-100nm Ferroferric Oxide Fe3O4 Nanoparticles
CAS No. 1317-61-9
Appearance Black to brownish-black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 50-100nm (Size Can be customized),  Ask for other available size range.
Ingredient Fe3O4 
Molecular Weight 159.69 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.2 g/cm³
Product Codes NCZ-218I
 

99.5% 20-30nm Alpha Iron Oxide Fe2 O3 Nanoparticles

Price range: $363.00 through $660.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99.5% 20-30nm Alpha Iron Oxide Fe2 O3 Nanoparticles
CAS No. 1309-37-1
Appearance Reddish-brown
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20-30nm (Size Can be customized),  Ask for other available size range.
Ingredient Fe₂O₃
Molecular Weight 159.69 g/mol
Melting Point 1565 °C
Boiling Point N/A
Density 5.24 g/cm³
Product Codes NCZ-217I

99.5% 10-20nm Gamma Iron Oxide Fe2 O3 Nanoparticles

Price range: $363.00 through $660.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99.5% 10-20nm Gamma Iron Oxide Fe2 O3 Nanoparticles
CAS No. 1309-37-1
Appearance Reddish brown
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10-20nm (Size Can be customized),  Ask for other available size range.
Ingredient Fe₂O₃
Molecular Weight 24.82 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-216I

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$660.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$660.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Cobalt (Co) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

$660.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical element cobalt has the atomic number 27 and the symbol Co. Cobalt is a silver-gray, hard, and shiny metal. Because it is one of only three room temperature ferromagnets with unaxial symmetry and hence suitability for digital recording, cobalt is employed in the production of high-strength, wear-resistant alloys as well as magnetic recording.

Bismuth Oxide (Bi2O3) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$660.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$660.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Barium Fluoride (BaF2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$660.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace.

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$660.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical formula for antimony telluride, an inorganic molecule, is Sb2Te3. It has a layered structure and is a grey crystalline solid. Weak van der Waals forces hold the layers together. They are made up of three atomic sheets of tellurium and two atomic sheets of antimony.

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$660.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical formula for antimony telluride, an inorganic molecule, is Sb2Te3. It has a layered structure and is a grey crystalline solid. Weak van der Waals forces hold the layers together. They are made up of three atomic sheets of tellurium and two atomic sheets of antimony.

Let's now examine the regions in which antimony telluride sputtering targets are used. As far as we are aware, thermoelectric devices have garnered significant interest due to Because they can directly convert heat into electric energy, they can be used as power generators, coolers, and thermal sensors or detectors. The power factor or the dimensionless figure of merit (ZT) of the materials are used to assess thermoelectric device performance. Tellurium antimony (Sb2Te3)

Yttrium Ferrite (Y3Fe5O12) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$660.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$660.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Prime CZ-Si Wafer, Size: 2”, Orientation: (111), Phosphor Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 280 ± 15 μm

Price range: $55.00 through $660.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/50 € 5 pieces/150 € 25 pieces/590 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 2”, Orientation: (111), Phosphor Doped, 1-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 2”
Orientation (111)
Coating
Thickness (μm) 280 ± 15
Doping Phosphor
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.

Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$659.00

Product 

Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

 7440-22-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

107.87 g/mol

Melting Point

 961.78 °C

Boiling Point

 2162 °C

Density

 10.49 g/cm³

Product Codes

NCZ-1688K

Calcium Manganate (CaMnO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$659.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

(-OH) Functionalized Industrial Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 48-78 nm

Price range: $37.00 through $659.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Zinc Oxide (ZnO) with Alumina Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$657.00

Product 

Zinc Oxide (ZnO) with Alumina Sputtering Targets, indium, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

ZnO: 1314-13-2 Al₂O₃: 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

ZnO + Al₂O₃ (AZO)(black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

ZnO: 81.38 g/mol Al₂O₃: 101.96 g/mol

Melting Point

~1975 °C

Boiling Point

N/A

Density

~5.6 g/cm³

Product Codes

NCZ-1482K

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

$655.00

Product 

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.250''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2384K

Zinc (Zn) Sputtering Targets, indium, Purity: 99.95%, Size: 4”, Thickness: 0.125”

$655.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Manganese (Mn) Sputtering Targets, indium, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$655.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Chromium Oxide (Cr2O3) Sputtering Targets, indium, Purity: 99.8%, Size: 2”, Thickness: 0.125”

$655.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The inorganic chemical with the formula Cr2O3 is chromium oxide. Applications for chromium oxide sputtering targets are numerous. Let's examine a few instances where chromium oxide sputtering targets are employed instead. Low friction coefficients and high hardness values are displayed by Cr2O3 thin films. Because of these qualities, chromium oxide is a strong contender to take the place of Al2O3 or transition metal nitrides in certain applications.

Graphene NMP Dispersion, Purity: 99.5%, Graphene: 2,0 wt%

Price range: $109.00 through $655.00
Select options This product has multiple variants. The options may be chosen on the product page
30 ml/109 € 60 ml/185 €                          120 ml/ 291

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$654.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Micron Powder, Purity: 99 %, Size: -325 mesh, Amorphous

Price range: $77.00 through $654.00
Select options This product has multiple variants. The options may be chosen on the product page
  25 grams/68 € 100 grams/134 € 500 grams/323 € 1000 grams/578 €
Please contact us for quotes on larger quantities !!!

Boron (B) Micron Powder

Purity: 99 %, Size: 325 mesh, Amorphous

Technical Properties:

 
PURITY

99%

PARTICLE SIZE

-325 Mesh

CAS

7440-42-8

BOILING POINT

2100 °C

MELTING POINT

2600 °C

ELECTRIC RESISTIVITY

4 x 10 ⁶ microhm-cm

MOHS HARDNESS @ 20ºC

9.3

FORM  

Powder

APPLICATIONS

Aerospace, Ceramics, Fuel Source, Nuclear

                               

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$653.00

Product 

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

101.96 g/mol

Melting Point

~2,072 °C

Boiling Point

~2,977 °C

Density

~3.97–3.98 g/cm³

Product Codes

NCZ-2544K

Magnesium Fluoride (MgF2) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$652.00

Product 

Magnesium Fluoride (MgF2) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

7783-40-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 62.30 g/mol

Melting Point

~1263 °C

Boiling Point

~2260 °C

Density

 3.18 g/cm³

Product Codes

NCZ-1982K

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$652.00

Product 

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1628K

Cesium iodide(CsI, 99.999%) (553836)

$651.00
Select options This product has multiple variants. The options may be chosen on the product page
Cesium iodide(CsI, 99.999%) (553836)
CAS NO.: 7789-17-5 [Formula] CsI [Properties] White crystal, soluble in water and alcohol. M. P. 621℃ [Standard of Quality]  
CsI min% Impurities Max ppm
Li K Na Ca Mg Fe Al Sr Rb Cr Mn SiO2
99.999 0.5 1 0.5 0.5 0.2 0.2 0.1 1 1 0.1 0.5 /
 
Product Codes- NCZ-2744K