Sort by
Filter by price
Filter
Show 9 12 18 24
Add to compare
Quick view
Add to wishlist

Prime FZ-Si Wafer, Size: 4”, Orientation: (100), None Doped, Resistivity: 1000 – 10000 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $95.00 through $1,578.00
Select options This product has multiple variants. The options may be chosen on the product page

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), None Doped, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 525 ± 25
Doping
Resistivity (ohm.cm) 1000 - 10000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
Add to compare
Quick view
Add to wishlist

Prime FZ-Si Wafer, Size: 4”, Orientation: (111), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 20 μm

Price range: $79.00 through $1,620.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime FZ-Si Wafer Size: 4”, Orientation: (111), None Doped, 2-Side Polished, Thickness: 300 ± 20 μm Technical Properties: Quality Prime
Add to compare
Quick view
Add to wishlist

Prime Si+SiO2 Wafer (dry), Size: 2”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

Price range: $69.00 through $870.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (dry) Size: 2”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm
Add to compare
Quick view
Add to wishlist

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 2-Side Polished, Thickness: 500 ± 15 μm, Coating 300 nm

Price range: $79.00 through $1,122.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 500 ± 15 μm, Coating 300 nm
Add to compare
Quick view
Add to wishlist

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm

Price range: $79.00 through $1,122.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 70 nm

Price range: $78.00 through $1,544.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 70 nm Technical Properties: Quality Prime
Add to compare
Quick view
Add to wishlist

Silicon on Insulator (SOI) Wafers, Size: 8”, Device Thickness: 600 nm, P type

Price range: $1,210.00 through $5,633.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon on Insulator (SOI) Wafers Size: 8”, Device Thickness: 600 nm, P type Technical Properties: Size (inch)  8” Thickness (μm)
Add to compare
Quick view
Add to wishlist

Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 625±25 μm, Single Side Polished, EPI-ready

Price range: $198.45 through $3,768.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Arsenide (GaAs) Wafer Size: 4”, Thickness: 625±25 μm, Single Side Polished Technical Properties: Quality  GaAs Materials  GaAs Size (inch)
Add to compare
Quick view
Add to wishlist

Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 350± 25 μm, Single Side Polished, EPI-ready, Mobility: 1000-3000

Price range: $198.45 through $3,768.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Arsenide (GaAs) Wafer Size: 4”, Thickness: 350± 25 μm, Mobility: 1000-3000 Technical Properties: Quality  GaAs Materials  GaAs Size (inch)  4”
Add to compare
Quick view
Add to wishlist

Coin Style Single Wafer Shipper, 3’’ / 76 mm , Natural PP

Price range: $10.05 through $74.00
Select options This product has multiple variants. The options may be chosen on the product page
Introduction The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon
Add to compare
Quick view
Add to wishlist

Prime CZ-Si Wafer, Size: 4”, Orientation: (111), Phosphor Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm

Price range: $44.10 through $761.25
Select options This product has multiple variants. The options may be chosen on the product page
Prime CZ-Si Wafer Size: 4”, Orientation: (111), Phosphor Doped, 1-Side Polished Technical Properties: Quality Prime Materials CZ-Si Size (inch) 4”
Add to compare
Quick view
Add to wishlist

Quartz Wafer, (X-Cut), Size: 2”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $66.15 through $806.40
Select options This product has multiple variants. The options may be chosen on the product page
Quartz Wafer (X-Cut), Size: 2”, 2-Side Polished, Thickness: 500 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch)
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 150 nm

Price range: $60.90 through $1,181.25
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+Si3N4 Wafer Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 150 nm Technical Properties: Quality Prime
Add to compare
Quick view
Add to wishlist

Prime FZ-Si Wafer, Size: 3”, Orientation: (100), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 380 ± 25 μm

Price range: $103.95 through $1,751.40
Select options This product has multiple variants. The options may be chosen on the product page
Prime FZ-Si Wafer Size: 3”, Orientation: (100), None Doped, 2-Side Polished, Thickness: 380 ± 25 μm Technical Properties: Quality Prime
Add to compare
Quick view
Add to wishlist

Prime Si+SiO2 Wafer (dry), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

Price range: $57.75 through $1,071.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (dry) Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm
Placeholder
Add to compare
Quick view
Add to wishlist

Coin Style Single Wafer Shipper, 6’’ / 150 mm , Natural PP

Price range: $10.50 through $70.35
Select options This product has multiple variants. The options may be chosen on the product page
Introduction The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon
Borosilicate Wafer
Add to compare
Quick view
Add to wishlist

Borosilicate Wafer, Size: 4”, 2-Side polished, Thickness: 500 ± 25 μm

Price range: $72.45 through $932.40
Select options This product has multiple variants. The options may be chosen on the product page
Please contact us for quotes on larger quantities !!! Boroslicate Wafer Size: 4”, 2-Side polished, Thickness: 500 ± 25 μm Technical
Placeholder
Add to compare
Quick view
Add to wishlist

Coin Style Single Wafer Shipper, 2’’ / 51 mm , Natural PP

Price range: $9.45 through $55.65
Select options This product has multiple variants. The options may be chosen on the product page
Introduction The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Indium Arsenide (InAs) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

, ,
Price range: $926.00 through $4,367.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/840 € 5 pieces/3960 €                           Please contact us for quotes on larger quantities !!!

Indium Arsenide (InAs) Wafers

Size: 3”, Thickness: 625± 25 μm , Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Zinc/Sulphur (Zn/S, N Type)
Orientation  100
Mobility  6000-20000
EPD  ≤50000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound. Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material. Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source. They can be supplied in n type, p type or semi insulating forms with different orientations. Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
  • Indium arsenide (InAs) wafer is used for infrared detectors.
  • Indium arsenide (InAs) wafer  is used for mil specs.
  • Indium arsenide (InAs) wafer  is used for foods.
  • Indium arsenide (InAs) wafer  is used for optical grades.
  • Diode lasers are also made using indium arsenide (InAs) wafer.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Indium Arsenide (InAs) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

, ,
Price range: $601.00 through $2,746.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/545 € 5 pieces/2490 €                           Please contact us for quotes on larger quantities !!!

Indium Arsenide (InAs) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Zinc/Sulphur (Zn/S, N Type)
Orientation  100
Mobility  6000-20000
EPD  ≤50000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound. Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material. Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source. They can be supplied in n type, p type or semi insulating forms with different orientations. Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
  • Indium arsenide (InAs) wafer is used for infrared detectors.
  • Indium arsenide (InAs) wafer  is used for mil specs.
  • Indium arsenide (InAs) wafer  is used for foods.
  • Indium arsenide (InAs) wafer  is used for optical grades.
  • Diode lasers are also made using indium arsenide (InAs) wafer.
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm

, ,
Price range: $60.00 through $1,240.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/55 € 5 pieces/245 € 25 pieces/1125 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 150 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

, ,
Price range: $101.00 through $2,178.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/92 € 5 pieces/420 € 25 pieces/1975 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 1000 nm
Thickness (μm) 380± 15
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 70 nm

, ,
Price range: $68.00 through $1,350.00
Select options This product has multiple variants. The options may be chosen on the product page
V 1 piece/62 € 5 pieces/270 € 25 pieces/1225 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 70 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 70 nm
Thickness (μm) 525± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

, ,
Price range: $70.00 through $1,433.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/280 € 25 pieces/1300 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 150 nm
Thickness (μm) 525± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

, ,
Price range: $76.00 through $1,599.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/69 € 5 pieces/310 € 25 pieces/1450 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 450 nm
Thickness (μm) 525± 25
Doping Arsenic
Resistivity (ohm.cm) 0,001-0,005
Polished One Side
  Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 150 nm

, ,
Price range: $63.00 through $1,240.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/58 € 5 pieces/245 € 25 pieces/1125 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size(inch) 3”
Orientation (100)
Coating 150 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm

, ,
Price range: $72.00 through $1,488.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/66 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 3”
Orientation (100)
Coating 300 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Silicon on Insulator (SOI) Wafers, Size: 8”, Device Thickness: 300 nm, P type

, ,
Price range: $1,054.00 through $4,918.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/956 € 5 pieces/4460 €                           Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 8'', Device Thickness: 300 nm, P type

Technical Properties:

Size (inch)  8”
Thickness (μm)  725
Resistivity   1-100 ohm.cm
Grade  Prime
Dopant  P type (Boron doped )
Orientation  100
Device Thickness  300 nm
Device Resistivity   1-100 ohm.cm
Device Type  P type (Boron doped )
Device Orientation  100
BOX Thickness  500 nm

Fields of Application for Silicon on Insulator (SOI) Wafer

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.
  • Silicon on insulator (SOI) wafer is used in silicon photonics.
  • Silicon on insulator (SOI) wafer is used in microelectronic devices.
  • Silicon on insulator (SOI) wafer is used for radio frequency (RF).
Add to compare
Quick view
Add to wishlist

Silicon on Insulator (SOI) Wafers, Size: 8”, Device Thickness: 600 nm, P type

, ,
Price range: $1,058.00 through $4,929.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/960 € 5 pieces/4470 €                          Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 8'', Device Thickness: 600 nm, P type

Technical Properties:

Size (inch)  8”
Thickness (μm)  725
Resistivity   1-100 ohm.cm
Grade  Prime
Dopant  P type (Boron doped )
Orientation  100
Device Thickness  600 nm
Device Resistivity   1-100 ohm.cm
Device Type  P type (Boron doped )
Device Orientation  100
BOX Thickness  2000 nm

Fields of Application for Silicon on Insulator (SOI) Wafer

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.
  • Silicon on insulator (SOI) wafer is used in silicon photonics.
  • Silicon on insulator (SOI) wafer is used in microelectronic devices.
  • Silicon on insulator (SOI) wafer is used for radio frequency (RF).
Add to compare
Quick view
Add to wishlist

Silicon on Insulator (SOI) Wafers, Size: 6”, Device Thickness: 625 nm, P type

, ,
Price range: $1,036.00 through $4,907.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/940 € 5 pieces/4450 €                          Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 6'', Device Thickness: 625 nm, P type

Technical Properties:

Size (inch)  6”
Thickness (μm)  625
Resistivity   1-20 ohm.cm
Grade  Prime
Dopant  P type (Boron doped)
Orientation  100
Device Thickness  220 nm
Device Resistivity   1-20 ohm.cm
Device Type  P type (Boron doped)
Device Orientation  100
BOX Thickness  1.5 um

Fields of Application for Silicon on Insulator (SOI) Wafer:

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.
  • Silicon on insulator (SOI) wafer is used in silicon photonics.
  • Silicon on insulator (SOI) wafer is used in microelectronic devices.
  • Silicon on insulator (SOI) wafer is used for radio frequency (RF).
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Silicon on Insulator (SOI) Wafers, Size: 6”, Device Thickness: 340 nm, P type

, ,
Price range: $1,042.00 through $4,935.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/945 € 5 pieces/4475 €                          Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 6'', Device Thickness: 340 nm, P type

Technical Properties:

Size (inch)  6”
Thickness (μm)  625
Resistivity   1-20 ohm.cm
Grade  Prime
Dopant  P type (Boron doped )
Orientation  100
Device Thickness  340 nm
Device Resistivity   1-20 ohm.cm
Device Type  P type (Boron doped )
Device Orientation  100
BOX Thickness  2 um

Fields of Application for Silicon on Insulator (SOI) Wafer

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.
  • Silicon on insulator (SOI) wafer is used in silicon photonics.
  • Silicon on insulator (SOI) wafer is used in microelectronic devices.
  • Silicon on insulator (SOI) wafer is used for radio frequency (RF).
Add to compare
Quick view
Add to wishlist

Silicon on Insulator (SOI) Wafers, Size: 4”, Thickness: 725 μm, P type (Boron doped)

, ,
Price range: $760.00 through $3,617.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/690 € 5 pieces/3280 €                           Please ask for stock status before placing an order on wafer products   Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 4'', Thickness: 750 μm, P type (Boron doped)

Technical Properties:

Size (inch)  4”
Thickness (μm)  725
Resistivity   1-100 ohm.cm
Grade  Prime
Dopant  P type (Boron doped )
Orientation  100
Device Thickness  300 nm
Device Resistivity   1-100 ohm.cm
Device Type  P type (Boron doped )
Device Orientation  100
BOX Thickness  500 nm

Fields of Application for Silicon on Insulator (SOI) Wafer

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.
  • Silicon on insulator (SOI) wafer is used in silicon photonics.
  • Silicon on insulator (SOI) wafer is used in microelectronic devices.
  • Silicon on insulator (SOI) wafer is used for radio frequency (RF).
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-6H) – 6H , Size: 2”, Thickness: 350 μm, Dummy Grade, Usable Area: 95%

,
Price range: $545.00 through $2,415.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/495 € 5 pieces/2190 €                           Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-6H) - 6H

Size: 2'', Thickness: 350 μm, Usable Area: 95%

Technical Properties:

Quality  Dummy Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤1
Usable Area  95%
Orientation  <0001>±0.5°
Resistivity   0.02 ~0.1 Ω·cm
TTV  ≤25
Bow  ≤30
Warp  ≤45
OF Length  15.9±1.7
IF Length  8±1.7

Fields of Application for Silicon Carbide (SiC-6H)- 6H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-6H) - 6H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

, ,
Price range: $545.00 through $2,514.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/495 € 5 pieces/2280 €               Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Quality  Mechanical Grade
Size (inch)  4”
Thickness (μm)  350
Ra  ≤1
4H area  80%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤25
Bow  ≤30
Warp  ≤45
OF Length  32.5±2
IF Length  18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 100%

, ,
Price range: $601.00 through $2,740.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/545 € 5 pieces/2485 €                 Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Quality  Mechanical Grade
Size (inch)  4”
Thickness (μm)  350
Ra  ≤0.3
4H area  100%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤10
Bow  ≤10
Warp  ≤25
OF Length  32.5±2
IF Length  18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-4H)- 4H , Size: 4”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

, ,
Price range: $534.00 through $2,492.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/485 € 5 pieces/2260 €               Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality  Dummy Grade
Size (inch)  4”
Thickness (μm)  350
Ra  ≤0.3
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤25
Warp  ≤35
OF Length  32.5±2
IF Length  18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

, ,
Price range: $827.00 through $4,069.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/750 € 5 pieces/3690 €                 Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)- 4H

Size: 4'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality  Testing Grade
Size (inch)  4”
Thickness (μm)  350
Ra  ≤0.3
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤25
Bow  ≤30
Warp  ≤35
OF Length  32.5±2
IF Length  18±2

Fields of Application for Silicon Carbide (SiC-4H) - 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

, ,
Price range: $430.00 through $1,974.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/390 € 5 pieces/1790 €                         Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality  Dummy Grade
Size (inch)  3”
Thickness (μm)  350
Ra  ≤0.3
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤25
Warp  ≤35
OF Length  22.0±2.0
IF Length  11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H)- 4H wafer has superior electronic properties, silicon carbide (SiC-6H)– 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

, ,
Price range: $424.00 through $1,924.00
Select options This product has multiple variants. The options may be chosen on the product page
V 1 piece/385 € 5 pieces/1745 €            Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality  Testing Grade
Size (inch)  3”
Thickness (μm)  350
Ra  ≤0.3
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤25
Bow  ≤30
Warp  ≤35
OF Length  22.0±2.0
IF Length  11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Production Grade, 4H Area: 100%

, ,
Price range: $408.00 through $1,863.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/370 € 5 pieces/1690 €                 Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Quality  Production Grade
Size (inch)  3”
Thickness (μm)  350
Ra  ≤0.3
4H area  100%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤10
Warp  ≤25
OF Length  22.0±2.0
IF Length  11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
 
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Research Grade, 4H Area: 95%

, ,
Price range: $860.00 through $3,837.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/780 € 5 pieces/3480 €               Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality  Research Grade
Size (inch)  3”
Thickness (μm)  350
Ra  ≤0.3
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤10
Warp  ≤35
OF Length  22.0±2.0
IF Length  11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-4H)- 4H, Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 95%

, ,
Price range: $419.00 through $1,847.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/380 € 5 pieces/1675 €                           Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality Dummy Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤1
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤25
Warp  ≤35
OF Length  16±2
IF Length  8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Testing Grade, 4H Area: 80%

, ,
Price range: $419.00 through $1,847.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/380 € 5 pieces/1675 €                           Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'' , Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Quality  Testing Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤1
4H area  80%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤25
Bow  ≤30
Warp  ≤35
OF Length  16±2
IF Length  8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
Add to compare
Quick view
Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Production Grade, 4H Area: 1

, ,
Price range: $623.00 through $2,734.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/565 € 5 pieces/2480 €                          Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 1

Technical Properties:

Quality  Production Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤0.3
4H area  1
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤10
Bow  ≤10
Warp  ≤25
OF Length  16±2
IF Length  8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
Add to compare
Quick view
Add to wishlist

Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 100, EPI-Ready

, ,
Price range: $1,301.00 through $5,392.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/1180 € 5 pieces/4890 €                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 4”, Thickness: 1000± 25 μm, Orientation: 111

Technical Properties:

Quality  EPI-Ready
Size (inch)  4”
Thickness (μm)  1000± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  32.5±2
IF Length   18±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 111, EPI-Ready (No reviews yet)

, ,
Price range: $1,301.00 through $5,392.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/1180 € 5 pieces/4890 €                         Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 4”, Thickness: 1000± 25 μm, Orientation: 111

Technical Properties:

Quality  EPI-Ready
Size (inch)  4”
Thickness (μm)  1000± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  32.5±2
IF Length   18±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
Add to compare
Quick view
Add to wishlist

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

, ,
Price range: $931.00 through $4,405.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/845 € 5 pieces/3995 €                          Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, EPI-Ready

, ,
Price range: $931.00 through $4,405.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/845 € 5 pieces/3995 €                           Please ask for amount of stock before placing an order on Wafer Products Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Quality  EPI-Ready
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
Add to compare
Quick view
Add to wishlist

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, Testing Grade

, ,
Price range: $623.00 through $2,611.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/565 € 5 pieces/2640 €                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
Add to compare
Quick view
Add to wishlist

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, Testing Grade

, ,
Price range: $623.00 through $2,911.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/565 € 5 pieces/2640 €                          Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
Add to compare
Quick view
Add to wishlist

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

, ,
Price range: $549.00 through $2,542.00
Select options This product has multiple variants. The options may be chosen on the product page
  1 piece/495 € 5 pieces/2290 €                         Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium (N type)
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
Add to compare
Quick view
Add to wishlist

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, EPI-Ready

, ,
Price range: $549.00 through $2,542.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/495 € 5 pieces/2290 €                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 111

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
Add to compare
Quick view
Add to wishlist

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, Testing Grade

, ,
Price range: $439.00 through $2,031.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/396 € 5 pieces/1830 €                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  Testing Grade
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, Testing Grade

, ,
Price range: $439.00 through $2,031.00
Select options This product has multiple variants. The options may be chosen on the product page
  1 piece/396 € 5 pieces/1830 €                         Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
Add to compare
Quick view
Add to wishlist

Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready

, ,
Price range: $1,420.00 through $6,638.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/1280 € 5 pieces/5980 €                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 4'', Thickness: 625± 25 μm, Orientation: 100

Technical Properties:

Size (inch)  4”
Thickness (μm)  625± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  32.5±2
IF Length   18±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
Add to compare
Quick view
Add to wishlist

Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

, ,
Price range: $1,420.00 through $6,638.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/1280 € 5 pieces/5980 €                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 4'', Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Size (inch)  4”
Thickness (μm)  625± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  32.5±2
IF Length   18±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

, ,
Price range: $766.00 through $3,530.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/690 € 5 pieces/3180 €                          Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 4'', Thickness: 625± 25 μm, Orientation: 100

Technical Properties:

Size (inch)  4”
Thickness (μm)  625± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  32.5±2
IF Length   18±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
Add to compare
Quick view
Add to wishlist

Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

, ,
Price range: $766.00 through $3,530.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/690 € 5 pieces/3180 €                         Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 4'', Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Size (inch)  4”
Thickness (μm)  625± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  32.5±2
IF Length   18±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready

, ,
Price range: $621.00 through $2,930.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/560 € 5 pieces/2640 €                          Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 100

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
Add to compare
Quick view
Add to wishlist

Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

, ,
Price range: $621.00 through $2,930.00
Select options This product has multiple variants. The options may be chosen on the product page
  1 piece/560 € 5 pieces/2640 €                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 111

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.