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Gallium Arsenide (GaAs) Wafer, Size: 4”, Thickness: 300± 25 μm, Double Side Polished, EPI-ready

Price range: $237.00 through $4,776.00
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Gallium Arsenide (GaAs) Wafer Size: 4”, Double Side Polished, Thickness: 300± 25 μm, EPI-ready Technical Properties: Quality  GaAs Materials  GaAs
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

Price range: $162.00 through $3,108.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Thickness: 350±25 μm, Single Side Polished Technical Properties: Quality  GaAs Materials  GaAs Size (inch)
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, EPI-ready

Price range: $189.00 through $3,588.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Thickness: 350±25 μm, Orientation: 100 Technical Properties: Quality  GaAs Materials  GaAs Size (inch)  2”
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Silicon on Insulator (SOI) Wafers, Size: 4”, Thickness: 725 μm, P type (Boron doped)

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Price range: $898.00 through $3,936.00
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Silicon on Insulator (SOI) Wafers Size: 4”, Thickness: 750 μm, P type (Boron doped) Technical Properties: Size (inch)  4” Thickness (μm)
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready, Mobility: 1000-3000

Price range: $189.00 through $3,588.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Thickness: 350±25 μm, Mobility: 1000-3000 Technical Properties: Quality  GaAs Materials  GaAs Size (inch)  2” Thickness
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Double Side Polished, EPI-ready

Price range: $189.00 through $3,588.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Arsenide (GaAs) Wafer Size: 2”, Thickness: 350±25 μm, Double Side Polished Technical Properties: Quality  GaAs Materials  GaAs Size (inch)
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Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

Price range: $189.00 through $3,588.00
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Gallium Arsenide (GaAs) Wafer Size: 4”, Thickness: 350±25 μm, Single Side Polished Technical Properties: Quality  GaAs Materials  GaAs Size (inch)
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Silicon on Insulator (SOI) Wafers, Size: 6”, Device Thickness: 625 nm, P type

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Price range: $1,128.00 through $5,340.00
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Silicon on Insulator (SOI) Wafers Size: 6”, Device Thickness: 625 nm, P type Technical Properties: Size (inch)  6” Thickness (μm)
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Silicon on Insulator (SOI) Wafers, Size: 6”, Device Thickness: 340 nm, P type

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Price range: $1,134.00 through $5,370.00
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Silicon on Insulator (SOI) Wafers Size: 6”, Device Thickness: 340 nm, P type Technical Properties: Size (inch)  6” Thickness (μm)
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Silicon on Insulator (SOI) Wafers, Size: 8”, Device Thickness: 300 nm, P type

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Price range: $1,147.00 through $5,352.00
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Silicon on Insulator (SOI) Wafers Size: 8”, Device Thickness: 300 nm, P type Technical Properties: Size (inch)  8” Thickness (μm)
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350±25 μm, Orientation: 100, Single Side Polished, EPI-Ready

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Price range: $432.00 through $1,968.00
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Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 100 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

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Price range: $432.00 through $1,968.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 111 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

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Price range: $414.00 through $1,968.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 100 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

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Price range: $414.00 through $1,968.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 111 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready

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Price range: $672.00 through $3,168.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 100 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

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Price range: $672.00 through $3,168.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 111 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

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Price range: $534.00 through $2,508.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 100 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

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Price range: $534.00 through $2,508.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 111 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Silicon Carbide Wafer (SiC-4H) – 4H , Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

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Price range: $297.00 through $1,302.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality  Mechanical Grade Size (inch)  2”
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Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready

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Price range: $1,536.00 through $7,176.00
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Indium Phosphide (InP) Wafers Size: 4”, Thickness: 625± 25 μm, Orientation: 100 Technical Properties: Size (inch)  4” Thickness (μm)  625±
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Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

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Price range: $1,536.00 through $7,176.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 4”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Size (inch)  4” Thickness (μm)  625±
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Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

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Price range: $828.00 through $3,816.00
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Indium Phosphide (InP) Wafers Size: 4”, Thickness: 625± 25 μm, Orientation: 100 Technical Properties: Size (inch)  4” Thickness (μm)  625±
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Indium Phosphide (InP) Wafers, Size: 4”, Thickness: 625± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

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Price range: $828.00 through $3,816.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 4”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Size (inch) 4” Thickness (μm) 625±
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready, Dopant: Iron (N Type)

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Price range: $822.00 through $3,936.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600± 25 μm, Orientation: 100 Technical Properties: Size (inch)  3” Thickness (μm)  600±
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111 , Single Side Polished, EPI-Ready, Dopant: Iron (N Type)

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Price range: $822.00 through $3,936.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600± 25 μm, Orientation: 111 Technical Properties: Size (inch)  3” Thickness (μm)  600±
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

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Price range: $594.00 through $2,748.00
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Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness (μm)
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, EPI-Ready

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Price range: $594.00 through $2,748.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness (μm)
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Silicon Carbide Wafer (SiC-4H)- 4H, Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 95%

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Price range: $456.00 through $2,010.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality Dummy Grade Size (inch)  2”
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, Testing Grade

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Price range: $475.00 through $2,196.00
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Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 100 Technical Properties: Quality  Testing Grade Size (inch)  2” Thickness
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, Testing Grade

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Price range: $475.00 through $2,196.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 111 Technical Properties: Quality  Testing Grade Size (inch)  2” Thickness
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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

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Price range: $1,014.00 through $4,794.00
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Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  3” Thickness (μm)
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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, EPI-Ready

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Price range: $1,014.00 through $4,794.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  3” Thickness (μm)
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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, Testing Grade

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Price range: $813.00 through $3,801.00
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Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Quality  Testing Grade Size (inch)  3” Thickness
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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, Testing Grade

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Price range: $813.00 through $3,801.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 3”, Thickness: 625± 25 μm, Orientation: 111 Technical Properties: Quality  Testing Grade Size (inch)  3” Thickness
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Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 100, EPI-Ready

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Price range: $1,699.00 through $7,041.00
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Gallium Antimonide (GaSb) Wafers Size: 4”, Thickness: 1000± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  4” Thickness
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Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 111, EPI-Ready

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Price range: $1,699.00 through $7,041.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 4”, Thickness: 1000± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  4” Thickness
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Testing Grade, 4H Area: 80%

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Price range: $547.00 through $2,412.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 2” , Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality  Testing Grade Size (inch)
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Silicon Carbide Wafer (SiC-6H) – 6H , Size: 2”, Thickness: 350 μm, Dummy Grade, Usable Area: 95%

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Price range: $712.00 through $3,153.00
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Silicon Carbide Wafer (SiC-6H) – 6H Size: 2”, Thickness: 350 μm, Usable Area: 95% Technical Properties: Quality  Dummy Grade Size (inch)  2”
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Production Grade, 4H Area: 1

Price range: $813.00 through $3,571.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 1 Technical Properties: Quality  Production Grade Size (inch)  2”
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

Price range: $561.00 through $2,577.00
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Indium Arsenide (InAs) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

Price range: $784.00 through $3,585.00
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Indium Arsenide (InAs) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness
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Indium Arsenide (InAs) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

Price range: $1,209.00 through $5,702.00
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Indium Arsenide (InAs) Wafers Size: 3”, Thickness: 625± 25 μm , Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  3” Thickness (μm)
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

Price range: $554.00 through $2,476.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 3”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality  Testing Grade Size (inch)  3”
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Production Grade, 4H Area: 100%

Price range: $444.00 through $2,028.00
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Silicon Carbide Wafer (SiC-4H)-4H Size: 3”, Thickness: 350 μm, 4H Area: 100% Technical Properties: Quality  Production Grade Size (inch)  3” Thickness (μm)
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Research Grade, 4H Area: 95%

Price range: $936.00 through $4,176.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 3”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality  Research Grade Size (inch)  3”
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

Price range: $594.00 through $2,736.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality  Mechanical Grade Size (inch)  4”
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 100%

Price range: $654.00 through $2,982.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 100% Technical Properties: Quality  Mechanical Grade Size (inch)  4”
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Silicon Carbide Wafer (SiC-4H)- 4H , Size: 4”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

Price range: $582.00 through $2,712.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality  Dummy Grade Size (inch)  4”
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

Price range: $750.00 through $3,690.00
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Silicon Carbide Wafer (SiC-4H)- 4H Size: 4”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality  Testing Grade Size (inch)  4” Thickness
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 400±25 μm, Double Side Polished, EPI-ready

Price range: $153.00 through $2,370.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 400± 25 μm, EPI-ready  Technical Properties: Quality  GaAs Materials  GaAs
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Double Side Polished, EPI-ready, Dopant: Zinc (P Type)

Price range: $151.00 through $2,250.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 350± 25 μm, EPI-ready, Dopant: Zinc (P Type) Technical Properties:
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 450±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N Type)

Price range: $163.00 through $2,412.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Single Side Polished, Thickness: 450± 25 μm, EPI-ready, Dopant: Silicon (N Type) Technical Properties:
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Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 600±25 μm, Double Side Polished, EPI-ready

Price range: $201.00 through $4,740.00
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Gallium Arsenide (GaAs) Wafer Size: 4”, Double Side Polished, Thickness: 600± 25 μm, EPI-ready Technical Properties: Quality  GaAs Materials  GaAs
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Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 640±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N-type)

Price range: $165.00 through $3,450.00
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Gallium Arsenide (GaAs) Wafer Size: 4”, Single Side Polished, Thickness: 640± 25 μm, EPI-ready, Dopant: Silicon (N-type) Technical Properties: Quality
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Coin Style Single Wafer Shipper, 4’’ / 100 mm , Natural PP

Price range: $10.00 through $63.00
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Introduction The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon
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Coin Style Single Wafer Shipper, 5’’ / 125 mm , Natural PP

Price range: $10.00 through $63.00
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Introduction The wafer shippers are specifically designed to ship, transport or store semiconductor wafers. Primarily designed to hold thin silicon
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Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 0.05 – 0.152 (ohm.cm), 2-Side Polished, Thickness: 365 ± 15 μm

Price range: $63.00 through $890.00
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Prime CZ-Si Wafer Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished Technical Properties: Quality Prime Materials CZ-Si Size (inch) 4” Orientation
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Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0,01-0,02 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $48.00 through $875.00
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Prime CZ-Si Wafer Size: 4”, Orientation: (100), Boron Doped, 2-Side Polished Technical Properties: Quality Prime Materials CZ-Si Size (inch) 4”
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Prime CZ-Si Wafer, Size: 4”, Orientation: (110), Boron Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm

Price range: $43.00 through $725.00
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Prime CZ-Si Wafer Size: 4”, Orientation: (110), Boron Doped, 1-Side Polished Technical Properties: Quality Prime Materials CZ-Si Size (inch) 4”
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 5000 – 500000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 10 μm

Price range: $97.00 through $1,638.00
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Prime FZ-Si Wafer Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 300 ± 10 μm Technical Properties: Quality Prime