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Hexagonal Boron Nitride (h-BN) Powder, 99% Purity, 2~4 um
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Hexagonal Boron Nitride (h-BN) Powder, 99% Purity, 2~4 um

Price range: $513.00 through $755.00
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Product Hexagonal Boron Nitride (h-BN) Powder, 99% Purity, 2~4 um
CAS No. 10043-11-5
Appearance White to off-white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 2-4um (Size Can be customized),  Ask for other available size range.
Ingredient BN
Molecular Weight 24.82 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.1 g/cm³
Product Codes NCZ-374I
 
Hexagonal Boron Nitride (h-BN) Powder, 99% Purity, 1~2 um
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Hexagonal Boron Nitride (h-BN) Powder, 99% Purity, 1~2 um

Price range: $293.00 through $755.00
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Product Hexagonal Boron Nitride (h-BN) Powder, 99% Purity, 1~2 um
CAS No. 10043-11-5
Appearance White to off-white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–2µm (Size Can be customized),  Ask for other available size range.
Ingredient BN
Molecular Weight 24.82 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.1 g/cm³
Product Codes NCZ-373I
99% Purity Hexagonal Boron Nitride (h-BN) Powder, 9~12 um
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99% Purity Hexagonal Boron Nitride (h-BN) Powder, 9~12 um

Price range: $513.00 through $755.00
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Product 99% Purity Hexagonal Boron Nitride (h-BN) Powder, 9~12 um
CAS No. 10043-11-5
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 9~12um (Size Can be customized),  Ask for other available size range.
Ingredient BN
Molecular Weight 24.82 g/mol
Melting Point N/A
Boiling Point N/A
Density 0.35-0.50 g/cm3
Product Codes NCZ-215I
99% Purity Hexagonal Boron Nitride (h-BN) Powder, 6~8 um
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99% Purity Hexagonal Boron Nitride (h-BN) Powder, 6~8 um

Price range: $513.00 through $755.00
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Product 99% Purity Hexagonal Boron Nitride (h-BN) Powder, 6~8 um
CAS No. 10043-11-5
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 6~8um (Size Can be customized),  Ask for other available size range.
Ingredient BN
Molecular Weight 24.82 g/mol
Melting Point N/A
Boiling Point N/A
Density 0.40-0.60 g/cm3
Product Codes NCZ-214I
 
99% Purity Hexagonal Boron Nitride (h-BN) Powder, 45~55 um
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99% Purity Hexagonal Boron Nitride (h-BN) Powder, 45~55 um

Price range: $513.00 through $755.00
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Product 99% Purity Hexagonal Boron Nitride (h-BN) Powder, 45~55 um
CAS No.  10043-11-5
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 45~55um (Size Can be customized),  Ask for other available size range.
Ingredient BN
Molecular Weight 24.82 g/mol
Melting Point N/A
Boiling Point N/A
Density 0.35-0.50 g/cm3
Product Codes NCZ-213I
99%  Purity Hexagonal Boron Nitride (h-BN) Powder, 2~4 um
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99% Purity Hexagonal Boron Nitride (h-BN) Powder, 2~4 um

Price range: $513.00 through $755.00
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Product 99% Purity Hexagonal Boron Nitride (h-BN) Powder, 2~4 um
CAS No. 10043-11-5
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 2~4um(Size Can be customized),  Ask for other available size range.
Ingredient BN
Molecular Weight 24.82 g/mol
Melting Point N/A
Boiling Point N/A
Density 0.15-0.25 g/cm3
Product Codes NCZ-212I
 
99% Purity Hexagonal Boron Nitride (h-BN) Powder, 18~22 um
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99% Purity Hexagonal Boron Nitride (h-BN) Powder, 18~22 um

Price range: $513.00 through $755.00
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Product 99% Purity Hexagonal Boron Nitride (h-BN) Powder, 18~22 um
CAS No. 10043-11-5
Appearance White to off-white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 18~22um (Size Can be customized),  Ask for other available size range.
Ingredient BN
Molecular Weight 24.82 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.1 g/cm³
Product Codes NCZ-211I
50-100 nm Yttrium (III) Oxide (Y2O3) 99.999% 5N Nano Powder
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50-100 nm Yttrium (III) Oxide (Y2O3) 99.999% 5N Nano Powder

Price range: $183.00 through $755.00
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Product 50-100 nm Yttrium (III) Oxide (Y2O3) 99.999% 5N Nano Powder
CAS No. 1314-36-9
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 50-100nm (Size Can be customized),  Ask for other available size range.
Ingredient Y2O3
Molecular Weight N/A
Melting Point 2425 °C
Boiling Point N/A
Density 5.01 g/cm³
Product Codes NCZ-184I
4N (99.99%) Indium Tin Oxide (In2O3/SnO2 90/10 wt%) Pieces Evaporation Materials
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4N (99.99%) Indium Tin Oxide (In2O3/SnO2 90/10 wt%) Pieces Evaporation Materials

Price range: $209.00 through $755.00
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Product 4N (99.99%) Indium Tin Oxide (In2O3/SnO2 90/10 wt%) Pieces Evaporation Materials
CAS No. 50926-11-9
Appearance Blue-gray or yellowish solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient In₂O₃·SnO₂
Molecular Weight N/A
Melting Point 1,910 °C
Boiling Point N/A
Density 7.1 g/cm³
Product Codes NCZ-170I
4N (99.99%) ITO Indium Tin Oxide (In2O3SnO2 9010 wt%) Pieces Evaporation Materials
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4N (99.99%) ITO Indium Tin Oxide (In2O3/SnO2 90/10 wt%) Pieces Evaporation Materials

Price range: $209.00 through $755.00
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Product 4N (99.99%) ITO Indium Tin Oxide (In2O3/SnO2 90/10 wt%) Pieces Evaporation Materials
CAS No. 50926-11-9
Appearance Pale yellow, dark green, dark grey 
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–10 mm (Size Can be customized),  Ask for other available size range.
Ingredient In2O3
Molecular Weight 62.30 g/mol
Melting Point N/A
Boiling Point N/A
Density 7.14 g/cm³
Product Codes NCZ-125E
High Purity Larger Surface Area SWNTs 95+%
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High Purity Larger Surface Area SWNTs 95+%

Price range: $195.00 through $755.00
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$195/1g
$755/5g

Product 

 High Purity Larger Surface Area SWNTs 95+%

CAS No.

7727-54-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1-2 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 228.20 g/mol

Melting Point

~3,650 °C

Boiling Point

N/A

Density

 1.98 g/cm³

Product Codes

NCZ-1238K
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Niobium (Nb) Micron Powder Purity: 99.95 %, Size: 3 µm

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Price range: $96.00 through $755.00
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25 grams/86 € 100 grams/150 € 500 grams/573 € 1000 grams/870 €  
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Neodymium (Nd) Micron Powder Purity: 99.5 %, Size: 325 mesh

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Price range: $13.00 through $755.00
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1 gram/12 € 5 grams/45 € 25 grams/185 € 100 grams/670 €   
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Titanium Nitride (TiN) Sputtering Targets, elastomer, Purity: 99.5%, Size: 2”, Thickness: 0.125”

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$754.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Molybdenum Oxide (MoO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''
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Molybdenum Oxide (MoO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$753.00
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Product 

 Molybdenum Oxide (MoO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''

CAS No.

1313-27-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  143.94 g/mol

Melting Point

 ~795°C

Boiling Point

 ~1155°C

Density

  ~4.7 g/cm³

Product Codes

NCZ-1905K
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Barium Titanate (BaTiO3) Sputtering Targets, elastomer, Purity: 99.99%, Size: 2”, Thickness: 0.125”

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$753.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering is sputtering, a process that alters the physical and chemical characteristics of bodies without air, such the Moon and asteroids.

Formulated as BaTiO3, barium titanate is an inorganic substance. When manufactured, barium titanate is transparent and has a white powder appearance.

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Magnetic Graphene Aerogel, Content of Fe3O4: 50%, Diameter: 1±0.1 cm

Price range: $194.00 through $753.00
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1 piece/ 194 € 5 pieces/ 753 €  Contact us for tailored quotes on larger quantities & experience exceptional solutions from our experts.
Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''
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Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$752.00
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Product 

 Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''

CAS No.
 12010‑42‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 0.5–2 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~312.82 g/mol

Melting Point

  ~1255 °C (bulk material)

Boiling Point

N/A

Density

 ~8.22 g/cm³

Product Codes

NCZ-2430K
Cobalt (Co) Sputtering Targets, indium, Purity: 99.95%, Size: 3'', Thickness: 0.125''
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Cobalt (Co) Sputtering Targets, indium, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$752.00
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Product 

 Cobalt (Co) Sputtering Targets, indium, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.
7440‑48‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 58.93 g/mol (cobalt atomic weight)

Melting Point

 ~1,495 °C

Boiling Point

~2,870–2,927 °C

Density

 ~8.9 g/cm³

Product Codes

NCZ-2282K
Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''
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Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$752.00
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Product 

 Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''

CAS No.

12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 183.49 g/mol

Melting Point

 ~2080 °C

Boiling Point

N/A

Density

 ~5.12 g/cm³

Product Codes

NCZ-1683K
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Zinc Oxide (ZnO) Sputtering Targets, elastomer, Purity: 99.99%, Size: 2”, Thickness: 0.125”

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$752.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Multi Walled Carbon Nanotubes N-butanol Dispersion, 4 wt%, Purity: >96%, OD: 45-75 nm, Length 8-28 µm

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Price range: $154.00 through $752.00
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15 ml/140 € 30 ml/245 € 60 ml/385 € 120 ml/682 €    
Please contact us for quotes on larger quantities !!!

Multi Walled Carbon Nanotubes N-butanol Dispersion

4 wt%, Purity: >96+%, OD: 45-75 nm, Length 8-28 µm

Technical Properties:

Purity >96 %
Color black
Average Outside Diameter (nm) 45-75
Average Inside Diameter (nm) 5.0-10.0
Length (μm) 8-28
Tap Density (g/cm3) 0.30
True Density (g/cm3) 2.4
Specific Surface Area (m2/g) 50
Ash < 1.5 wt%
Electrical Conductivity (S/cm) > 98
Manufacturing Method CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include midicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug dilevery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium battaries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-tamplate  
Silicon hexaboride(SiB6, 99%-99.9%, 100mesh) (751530 )
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Silicon hexaboride(SiB6, 99%-99.9%, 100mesh) (751530 )

Price range: $553.00 through $751.00
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Silicon hexaboride(SiB6, 99%-99.9%, 100mesh) (751530 )
Product Codes- NCZ-2695K
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Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

, , ,
$751.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Chromium (Cr) Sputtering Targets, indium, Purity: 99.95%, Size: 3'', Thickness: 0.125''
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Chromium (Cr) Sputtering Targets, indium, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$750.00
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Product 

 Chromium (Cr) Sputtering Targets, indium, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.
7440‑47‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  52.00 g/mol

Melting Point

  1,857 °C

Boiling Point

 2,672 °C

Density

  7.14 g/cm³

Product Codes

NCZ-2307K
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Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''
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Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$750.00
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Product 

 Zinc Oxide (ZnO) with Alumina Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''

CAS No.

ZnO: 1314-13-2 Al₂O₃: 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

ZnO + Al₂O₃ (AZO)(black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ZnO: 81.38 g/mol Al₂O₃: 101.96 g/mol

Melting Point

~1975 °C

Boiling Point

N/A

Density

 ~5.6 g/cm³

Product Codes

NCZ-1484K
Germanium (Ge) Sputtering Target
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Germanium (Ge) Sputtering Target

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Price range: $84.00 through $750.00
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Product 

 Germanium (Ge) Sputtering Target

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 72.63 g/mol

Melting Point

937.4 °C

Boiling Point

2,830 °C

Density

  5.32 g/cm³

Product Codes

NCZ-1290K
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Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

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$750.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

, ,
$750.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 6”, Thickness: 0.250”

, , ,
$750.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

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$750.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
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Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

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$750.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
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Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

, ,
$750.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
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Multi Walled Carbon Nanotubes N-butanol Dispersion, 4 wt%, Purity: >96%, OD: 45-75 nm, Length 8-28 µm

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Price range: $155.00 through $750.00
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Multi Walled Carbon Nanotubes N-butanol Dispersion 4 wt%, Purity: >96+%, OD: 45-75 nm, Length 8-28 µm Technical Properties: Purity >96 %
(-COOH) Functionalized Single Walled Carbon Nanotubes
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(-COOH) Functionalized Single Walled Carbon Nanotubes, Purity: > 65%

Price range: $65.00 through $750.00
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Applications:

There are numerous possible uses for single-walled carbon nanotubes in various industries. Among these are applications in the fields of energy, chemicals, medicine, mechanics, and electric and electronic devices. It can be used in biosensors, medication delivery, CNT composites, gas-discharge tubes, flat panel displays, hydrogen storage, catalysis, nanoprobes, and lithium batteries solar cells, photoluminescence, supercapacitors, transistors, and templates.

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Fullerene-C70, Purity: 95%

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Price range: $165.00 through $750.00
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1 gram/148 € 5 grams/670 €                           
Please contact us for quotes on larger quantities !!!

Fullerene-C70

Purity: 95% 

Technical Properties:

Fullerene Compound Formula C70
Fullerene  Molecular Weight 840.77 g/mol
Fullerene  Purity 95%
Fullerene  Melting Point >280 °C
Fullerene  Appearance Black Powder
Fullerene  CAS 115383-22-7 

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor. 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.  
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(-COOH) Functionalized Double Walled Carbon Nanotubes, Purity: > 65%

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Price range: $78.00 through $750.00
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(-COOH) Functionalized Double Walled Carbon Nanotubes

Purity: > 65%, Length: 48 µm, black

Double walled carbon nanotubes are especial class of carbon nanotubes, comprise of two nanotubes placed inside one another. Varying degrees of interaction between the two tubes due to the differences in the diameter of the tubes results in unique and interesting optical, mechanical and electronic properties. DWCNTs can be applied in many different areas such as emission displays (FEDs) and field emission transistors (FETs) whereby their impressive properties. For applications requiring the highest quality, We offer Double Walled Carbon Nano Tubes with low prices.
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Carbon Nanotubes Thermal Radiation Coating Dispersion

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Price range: $64.00 through $750.00
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Applications:

Carbon nanotubes are one of the best thermal conductivity materials. They can form very thin coatings with very small thermal resistance. Carbon nanotubes thermal radiation coating dispersion can be applied to copper foil, aluminum plate, LED lamp base, and electrical enclosure cooling.
Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 6'', Thickness: 0.125''
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Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 6”, Thickness: 0.125”

$749.00
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Product 

 Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 6'', Thickness: 0.125''

CAS No.
 10043-11-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 24.82 g/mol

Melting Point

 ~2973 °C

Boiling Point

N/A

Density

 ~2.1 g/cm³

Product Codes

NCZ-2367K
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Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

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$748.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Magnetic Graphene Aerogel, Content of Fe3O4: 65%, Diameter: 1±0.1 cm

Price range: $192.00 through $748.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/ 192 € 5 pieces/ 748 €  Contact us for tailored quotes on larger quantities & experience exceptional solutions from our
Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.125''
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Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.125”

$747.00
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Product 

 Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.125''

CAS No.

123273‑09‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  ~313.9 g/mol

Melting Point

 ~1,550 °C (approximate; ceramic decomposition likely above)

Boiling Point

N/A

Density

  ~5.3 g/cm³ @ room temp

Product Codes

NCZ-2144K
Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''
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Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$746.00
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Product 

 Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.
 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  172.11 g/mol

Melting Point

 2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

  7.13 g/cm³

Product Codes

NCZ-2333K
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(-OH) Functionalized Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 18-28 nm

Price range: $46.00 through $746.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Kish Graphite(industrial grade, 80-90%) (371667)
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Kish Graphite(industrial grade, 80-90%) (371667)

$745.00
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Kish Graphite(industrial grade, 80-90%) (371667)
  Kish Graphite is a byproduct of steel-making. The more modern steel-making processes do not result in the generation of Kish graphite, but in earlier times it was produced during the cooling of molten steel. It is obtained when carbon crystallizes from molten steel during the steel manufacturing process. It is used by hundreds of research groups to make graphene by mechanical exfoliation.  With preparation methods, the size of kish graphite is from mm to cm. As it is obtained by high temperature, the main applications include: as raw materials to synthesis the graphene, graphite intercalation compounds, and the fundamental research works such as the properties of graphite, large size graphite layer compounds.
Product Codes- NCZ-2717K
Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''
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Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$745.00
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Product 

 Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

58397-70-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~231.71 g/mol

Melting Point

~2,700–3,200 °C

Boiling Point

~4,500–5,000 °C

Density

 ~14.5–17.0 g/cm³

Product Codes

NCZ-1557K
Doped Tin Oxide Nanoparticles/ Nanopowder Dispersion in Water(DTO)
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Doped Tin Oxide Nanoparticles/ Nanopowder Dispersion in Water(DTO)

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$745.00
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$745/500g

Product 

 Doped Tin Oxide Nanoparticles/ Nanopowder Dispersion in Water(DTO)

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

10~15nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~150–165 g/mol

Melting Point

~1630 °C

Boiling Point

N/A

Density

  6.9–7.1 g/cm³

Product Codes

NCZ-1190K
Doped Tin Oxide Nanoparticles/ Nanopowder Dispersion in Aromatic(DTO)
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Doped Tin Oxide Nanoparticles/ Nanopowder Dispersion in Alcohols(DTO)

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$745.00
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$745/500g

Product 

 Doped Tin Oxide Nanoparticles/ Nanopowder Dispersion in Alcohols(DTO)

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

10–15 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~150–165 g/mol

Melting Point

~1630 °C

Boiling Point

N/A

Density

  6.9–7.1 g/cm³

Product Codes

NCZ-1187K
Doped Tin Oxide Nanoparticles/ Nanopowder Dispersion in Aromatic(DTO)
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Doped Tin Oxide Nanoparticles/ Nanopowder Dispersion in Aromatic(DTO)

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$745.00
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$745/500g

Product 

 Doped Tin Oxide Nanoparticles/ Nanopowder Dispersion in Aromatic(DTO)

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

10~15nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~150–165 g/mol

Melting Point

~1630 °C

Boiling Point

N/A

Density

  6.9–7.1 g/cm³

Product Codes

NCZ-1186K
Antimony Tin Oxide Nanoparticles/ Nanopowder Dispersion in Alcohols
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Antimony Tin Oxide Nanoparticles/ Nanopowder Dispersion in Alcohols (Copy)

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$745.00
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$745/500g

Product 

 Antimony Tin Oxide Nanoparticles/ Nanopowder Dispersion in Alcohols

CAS No.

1332-09-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<20nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 160–165 g/mol

Melting Point

~1,100 – 1,300 °C

Boiling Point

N/A

Density

 ~6.5–7.2 g/cm³

Product Codes

NCZ-1185K
Antimony Tin Oxide Nanoparticles/ Nanopowder Dispersion in aromatic
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Antimony Tin Oxide Nanoparticles/ Nanopowder Dispersion in aromatic

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$745.00
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$745/500g

Product 

 Antimony Tin Oxide Nanoparticles/ Nanopowder Dispersion in aromatic

CAS No.

1332-09-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<20nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~150–170 g/mol

Melting Point

~1,100 – 1,300 °C

Boiling Point

N/A

Density

 ~6.5–7.2 g/cm³

Product Codes

NCZ-1183K
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Molybdenum Disulfide (MoS2) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

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$745.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

, ,
$745.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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(-COOH) Functionalized Short Length Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 18-28 nm

Price range: $46.00 through $745.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Calcium Manganate (CaMnO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''
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Calcium Manganate (CaMnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$744.00
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Product 

 Calcium Manganate (CaMnO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.
12058-85-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 157.87 g/mol

Melting Point

  Approx. 1400 °C (decomposes)

Boiling Point

N/A

Density

  ~4.7 g/cm³

Product Codes

NCZ-2360K
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Titanium Boride (TiB2) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

, , ,
$744.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 3”, Thickness: 0.125”

, ,
$744.00
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 Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound aluminum nitride has the formula AlN. The combination of mechanical, chemical, and physical properties of aluminum nitride is exceptional. Superior aluminum nitride films have found application in a wide range of sensors and devices, including optoelectronic and optical ones. Regarding the optical and optoelectronic uses, a large band gap (~6.2 eV), a high refractive index (~2.0), and low absorption

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Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 3”, Thickness: 0.125”

, , ,
$744.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.
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Ultralight Graphene Aerogel, Diameter: 1.2±0.1 cm, Height: 1.2±0.1 cm

Price range: $196.00 through $743.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/ 196 € 5 pieces/ 743 € Contact us for tailored quotes on larger quantities & experience exceptional solutions from our experts.
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Graphene Oxide, 2-5 Layer, Dia: 4,5 µm, SA: 420 m2/gr

Price range: $75.00 through $742.50
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1 gram / 75 € 5 grams / 269.50 € 25 grams / 742.50 €