Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$944.00

Product 

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

 ~3.58 g/cm³

Product Codes

NCZ-1972K

Zinc (Zn) powder, -40 mesh, 99.999%

Price range: $605.00 through $943.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Zinc (Zn) powder, -40 mesh, 99.999%
CAS No. 7440-66-6
Appearance Shiny, grayish metallic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Zn
Molecular Weight 65.38 g/mol
Melting Point N/A
Boiling Point N/A
Density 7.14 g/cm³
Product Codes NCZ-607I

Prime Si+SiO2 Wafer (dry), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

Price range: $51.00 through $943.00
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1 piece/46 € 5 pieces/190 € 25 pieces/850 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 3”
Orientation (100)
Coating 100 nm
Thickness (μm) 380 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$942.00

Product 

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.250''

CAS No.

25583-20-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

61.88 g/mol

Melting Point

 ~2950 °C

Boiling Point

~4300 °C

Density

5.22 g/cm³

Product Codes

NCZ-1602K

Multi Walled Carbon Nanotubes Water Dispersion, 4 wt%, Purity: > 96%, OD: 3-13 nm, Length: 45 µm

Price range: $83.00 through $942.00
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30 ml/76 € 60 ml/136 € 120 ml/246 € 500 ml/855 € Please contact us for quotes on larger quantities !!!

Multi Walled Carbon Nanotubes Water Dispersion

4 wt%, Purity: > 96+ %, OD: 3-13 nm, Length: 45 µm

Technical Properties:

Purity > 96+ %
Color black
Average Outside Diameter (nm) 3-13
Average Inside Diameter (nm) 3.0-5.0
Length (µm) 45
Tap Density (g/cm3) 0.30
True Density (g/cm3) 2.4
Specific Surface Area (m2/g) 240
Ash < 1.5 wt%
Electrical Conductivity (S/cm) > 98
Manufacturing Method CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template  

Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$941.00

Product 

Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

 ~68189‑52‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~234–237 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

~6.3–6.5 g/cm³

Product Codes

NCZ-2107K

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$940.00

Product 

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

 1304-76-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

465.96 g/mol

Melting Point

 ~817 °C

Boiling Point

N/A

Density

 ~8.9 g/cm³

Product Codes

NCZ-2406K

Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$940.00

Product 

Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''

CAS No.

12031-63-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 147.85 g/mol

Melting Point

~1,240–1,257 °C

Boiling Point

N/A

Density

~4.30 g/cm³ (ceramic); up to 4.65 g/cm³ (crystal)

Product Codes

NCZ-2041K

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.250”

$940.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Fullerene-C70, Purity: 98%

Price range: $194.00 through $940.00
Select options This product has multiple variants. The options may be chosen on the product page
1 gram/174 € 5 grams/840 €                           
Please contact us for quotes on larger quantities !!!

Fullerene-C70

Purity: 98% 

Technical Properties:

Fullerene Compound Formula C70
Fullerene  Molecular Weight 840.77 g/mol
Fullerene  Purity 98%
Fullerene  Melting Point >280 °C
Fullerene  Appearance Black Powder
Fullerene  CAS 115383-22-7

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.

Zinc Selenide (ZnSe) Sputtering Target

Price range: $365.00 through $939.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Zinc Selenide (ZnSe) Sputtering Target

CAS No.

1315‑09‑9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~144.35 g/mol

Melting Point

1,525 °C

Boiling Point

N/A

Density

5.27–5.30 g/cm³

Product Codes

NCZ-1390K

Graphene Nanoplatelet, Purity: 99.9+%, Size: 5 nm, S.A: 170 m2/g, Dia: 7 μm

Price range: $10.00 through $939.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Graphene Nanoplatelet

  • Use as a high performance additive for composites with PPO, POM ,PPS, PC, ABS, PP, PE, PS, Nylon and rubbers.
  • Can improve composites tensile strength, stiffness, corrosion resistance, abrasion resistance and anti-static electricity and lubricant properties.
  • For all mechanical properties modifications, typical amounts are about 2-6 wt%.
  • For conductivity modification, typical amounts are about 2-8 wt%.

Graphene Nanoplatelet, Purity: 99.9+%, Size: 5 nm, S.A: 170 m2/g, Dia: 7 μm

Price range: $10.00 through $939.00
Select options This product has multiple variants. The options may be chosen on the product page
1 gram: 10 € 5 grams: 17 € 25 grams: 46 € 100 grams: 141 € 500 grams: 490 € 1000 grams: 939 € Contact us for tailored quotes on larger quantities &

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$937.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

$936.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.125''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1658K

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$936.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$936.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$936.00

 Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

With the chemical formula Al2O3, aluminum oxide is a compound made of aluminum and oxygen. Because of its high melting point, Al2O3 is useful as a refractory material and as an abrasive due to its hardness, as well as for the production of aluminum metal. Thin coatings of aluminum oxide that can

be acquired using aluminum oxide Because of their exceptional qualities, including great resistance to abrasion and corrosion, transparency, mechanical strength and hardness, as well as insulating and optical qualities, sputtering targets are widely employed in a variety of mechanical, optical, and microelectronic applications. All of these characteristics of aluminum oxide film are dependent on several sputtering system parameters, including sputtering rate, target-to-substrate distance, reactive gas pressures, etc.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$936.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Graphene Nanoplatelet, Purity: 99.9+%, Size: 3 nm, S.A: 320 m2/g, Dia: 1.5 μm

Price range: $7.00 through $935.00
Select options This product has multiple variants. The options may be chosen on the product page
Graphene Nanoplatelets are nano particles consisting of short stacks of platalet-shaped graphene sheets that are in a planar form. Graphene nanoplatelets are excellent electrical and thermal conductors as a result of their pure graphitic composition. Graphene nanoplatelets help increase thermal, electrical conductivity and stability and improve barrier properties. Unique features of graphene nanoplatelets benefit it greatly to gain a place in the market. Nanografi supplies Graphene Nanoplatelet with high quantity and more types for different applications.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$934.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2331K

Zinc Oxide (ZnO), 99.9995% (5N5) High Purity Powder, 500g

$933.00
Product Zinc Oxide (ZnO), 99.9995% (5N5) High Purity Powder, 500g
CAS No. 1314-13-2
Appearance White fine
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–5µm (Size Can be customized),  Ask for other available size range.
Ingredient ZnO
Molecular Weight 81.38 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.61 g/cm³
Product Codes NCZ-610I
 

Titanium Nitride (TiN) Sputtering Target

Price range: $346.00 through $933.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Titanium Nitride (TiN) Sputtering Target

CAS No.

25583-20-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

61.87 g/mol

Melting Point

~2,940 °C

Boiling Point

~3,560 °C

Density

~5.4 g/cm³

Product Codes

NCZ-1335K

Borosilicate Wafer, Size: 4”, 2-Side polished, Thickness: 500 ± 25 μm

Price range: $72.45 through $932.40
Select options This product has multiple variants. The options may be chosen on the product page
Please contact us for quotes on larger quantities !!! Boroslicate Wafer Size: 4”, 2-Side polished, Thickness: 500 ± 25 μm Technical

Polyglutamic acid(PGA, Cosmetic grade) (439511)

Price range: $682.00 through $932.00
Select options This product has multiple variants. The options may be chosen on the product page
Polyglutamic acid(PGA, Cosmetic grade) (439511)
 
Synonym  PGA, γ-PGA-Na, γ-Polyglutamic Acid, Gamma-Polyglutamic acid   Product Codes- NCZ-2677K

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

$932.00

Product 

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.125''

CAS No.

12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

183.49 g/mol

Melting Point

 ~2080 °C

Boiling Point

N/A

Density

~5.12 g/cm³

Product Codes

NCZ-1676K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$931.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2401K

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$931.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

An inorganic substance is lead zirconium titanate. This ceramic perovskite material has a strong piezoelectric effect, which means that when an electric field is applied, the compound changes shape. Lead zirconium titanate is employed in a number of practical applications such as ultrasonic transducers and piezoelectric resonators.

Antimony (Sb) Sputtering Target

Price range: $423.00 through $930.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Antimony (Sb) Sputtering Target

CAS No.

7440-36-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

121.76 g/mol

Melting Point

630.63 °C

Boiling Point

1,580 °C

Density

~6.697 g/cm³

Product Codes

NCZ-1285K

Zinc Oxide (ZnO) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$930.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$930.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Graphene Nanoplatelet, Purity: 99.9+%, Size: 5 nm, S.A: 135 m2/g, Dia: 7 μm

Price range: $8.00 through $929.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Graphene Nanoplatelets

  • Use as a high performance additive for composites with PPO, POM ,PPS, PC, ABS, PP, PE, PS, Nylon and rubbers.
  • Can improve composites tensile strength, stiffness, corrosion resistance, abrasion resistance and anti-static electricity and lubricant properties.
  • For all mechanical properties modifications, typical amounts are about 2-6 wt%
  • For conductivity modification, typical amounts are about 2-8 wt%

Lanthanum Aluminate (LaAlO3) Sputtering Target

Price range: $427.00 through $928.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lanthanum Aluminate (LaAlO3) Sputtering Target

CAS No.

12003-62-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

221.89 g/mol

Melting Point

~2,078 °C

Boiling Point

N\A

Density

~6.52 g/cm³

Product Codes

NCZ-1317K

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”, Grey to Black

$928.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$927.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes at ~3,600 °C (does not melt under normal pressure)

Boiling Point

 Sublimes directly without boiling phase at ~3,600 °C+

Density

~2.2 g/cm³ (varies with crystallinity and orientation)

Product Codes

NCZ-2335K

Iridium (Ir) Nanopowder, 20-30nm, ≥99.99% (4N) Purity, 1g

$926.00
Product Iridium (Ir) Nanopowder, 20-30nm, ≥99.99% (4N) Purity, 1g
CAS No. 7439-88-5
Appearance Gray to black metallic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20-30nm (Size Can be customized),  Ask for other available size range.
Ingredient Ir
Molecular Weight 192.22 g/mol
Melting Point N/A
Boiling Point N/A
Density 22.56 g/cm³
Product Codes NCZ-431I
 

Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in Ethylene Glycol, Size: 12 nm, Anatase, 22 wt %

Price range: $37.00 through $926.00
Select options This product has multiple variants. The options may be chosen on the product page
25 gram/34 € 50 grams/55 € 100 grams/104 € 500 grams/445 € 1000 grams/840 €                 
Please contact us for quotes on larger quantities !!!

Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in Ethylene Glycol

Size: 12 nm, Anatase, 22 wt %

Graphene on Silicon substrate (795508)

Price range: $225.00 through $925.00
Select options This product has multiple variants. The options may be chosen on the product page
Graphene on Silicon substrate (795508) Silicon parameter Thickness :700μm SiO2 thickness:300nm Graphene parameter and price
 
Substrate Layers Size Sheet Resistance(Ω/sq) Notes Price($/pc)
Si/SiO2 monolayer 10mm×10mm 300-500 monolayer coverage ≥95% 161
monolayer 15mm×15mm 300-500 monolayer coverage ≥95% 325
monolayer 20mm×20mm 300-500 monolayer coverage ≥95% 405
monolayer 50mm×50mm 300-500 monolayer coverage ≥95% 845
multilayer 10mm×10mm 200-300 2-4 layers 225
multilayer 15mm×15mm 200-300 2-4 layers 405
multilayer 20mm×20mm 200-300 2-4 layers 495
multilayer 50mm×50mm 200-300 2-4 layers 925
Product Codes- NCZ-2589K

Prime CZ-Si Wafer, Size: 6”, Orientation: (111), Boron Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 625±25um

Price range: $49.00 through $925.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime CZ-Si Wafer Size: 6”, Orientation: (111), Boron Doped, 1-Side Polished, Thickness: 625±25um Technical Properties: Quality Prime Materials CZ-Si Size (inch)

Fullerene-C70, Purity: 96%

Price range: $193.00 through $925.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.

100g Sodium bis(oxalato)borate (NaBOB) Powder, >99.5%

$924.00
Product 100g Sodium bis(oxalato)borate (NaBOB) Powder, >99.5%
CAS No. 83145-77-1
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient C₄BNaO₈
Molecular Weight 209.84 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-120I

Nickel/Chromium (Ni/Cr 80/20 wt.%) Pellets (6mm Diameter x 6mm Length) Evaporation Materials

Price range: $429.00 through $924.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Nickel/Chromium (Ni/Cr 80/20 wt.%) Pellets (6mm Diameter x 6mm Length) Evaporation Materials
CAS No. 1116-97-1
Appearance Silvery-gray, metallic gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 6mm (Size Can be customized),  Ask for other available size range.
Ingredient Ni/Cr
Molecular Weight 57.35g/mol
Melting Point N/A
Boiling Point N/A
Density 8.4 g/cm3
Product Codes NCZ-169E

3N (99.9%) Ytterbium Fluoride (YbF3) Pieces (1-6mm) Evaporation Materials

Price range: $429.00 through $924.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 3N (99.9%) Ytterbium Fluoride (YbF3) Pieces (1-6mm) Evaporation Materials
CAS No. 13760-80-0
Appearance White, Crystalline Solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1-6mm (Size Can be customized),  Ask for other available size range.
Ingredient YbF3
Molecular Weight 230.04 g/mol
Melting Point 1,157 °C
Boiling Point N/A
Density 8.2 g/cm3
Product Codes NCZ-168E

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$924.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

One of the most promising multiferroic materials is bismuth ferrite, an inorganic chemical compound with a perovskite structure and the chemical formula BiFeO3. In order to create a one-phase material called bismuth ferrite (BiFeO3), a bismuth ferrite sputtering target is often manufactured by high temperature sinttering or recrystallizing the mixture of the oxide compound of Bi and Fe. For targets that are sputtering bismuth ferrite, indium bonding is advised.

Selenium (Se) Sputtering Target

Price range: $261.00 through $923.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Selenium (Se) Sputtering Target

CAS No.

7782‑49‑2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~78.96 u/g·mol

Melting Point

~217 °C

Boiling Point

~685 °C

Density

~4.79 g/cm³

Product Codes

NCZ-1303K

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$921.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lithium Niobate LiNbO3 Sputtering Target with 5 at.% excess Li2O

Price range: $678.00 through $920.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Lithium Niobate LiNbO3 Sputtering Target with 5 at.% excess Li2O
CAS No. 12031-63-9
Appearance Dense, white or light gray ceramic material
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient LiNbO3
Molecular Weight 147.846 g/mol
Melting Point 1,257 °C 
Boiling Point N/A
Density N/A
Product Codes NCZ-126H

Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA85/15) (823989)

$919.00
Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA85/15) (823989) Appearance                    yellowish to tan irregular blocks m-PEG                        1900, 5000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm
Grade Mw of PLGA Mw of mPEG Price($/20g)
mPEG-PLGA-01 2000-4000 1900 919
mPEG-PLGA-02 5000-10,000 1900 919
mPEG-PLGA-03 20,000-40,000 1900 919
mPEG-PLGA-04 60,000-80,000 1900 919
mPEG-PLGA-05 100,000-200,000 1900 919
mPEG-PLGA-06 2000-4000 5000 919
mPEG-PLGA-07 5000-10,000 5000 919
mPEG-PLGA-08 20,000-40,000 5000 919
mPEG-PLGA-09 60,000-80,000 5000 919
mPEG-PLGA-10 100,000-200,000 5000 919
Product Codes- NCZ-2644K

Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA75/25) (822989)

$919.00
Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA75/25) (822989) Appearance                    yellowish to tan irregular blocks m-PEG                        1900, 5000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm 
   
Grade Mw of PLGA Mw of mPEG Price($/20g)
mPEG-PLGA-01 2000-4000 1900 919
mPEG-PLGA-02 5000-10,000 1900 919
mPEG-PLGA-03 20,000-40,000 1900 919
mPEG-PLGA-04 60,000-80,000 1900 919
mPEG-PLGA-05 100,000-200,000 1900 919
mPEG-PLGA-06 2000-4000 5000 919
mPEG-PLGA-07 5000-10,000 5000 919
mPEG-PLGA-08 20,000-40,000 5000 919
mPEG-PLGA-09 60,000-80,000 5000 919
mPEG-PLGA-10 100,000-200,000 5000 919
Product Codes- NCZ-2643K

Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA50/50) (821989)

$919.00
Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA50/50) (821989) Appearance                    yellowish to tan irregular blocks m-PEG                        1900, 5000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm 
   
Grade Mw of PLGA Mw of mPEG Price($/20g)
mPEG-PLGA-01 2000-4000 1900 919
mPEG-PLGA-02 5000-10,000 1900 919
mPEG-PLGA-03 20,000-40,000 1900 919
mPEG-PLGA-04 60,000-80,000 1900 919
mPEG-PLGA-05 100,000-200,000 1900 919
mPEG-PLGA-06 2000-4000 5000 919
mPEG-PLGA-07 5000-10,000 5000 919
mPEG-PLGA-08 20,000-40,000 5000 919
mPEG-PLGA-09 60,000-80,000 5000 919
mPEG-PLGA-10 100,000-200,000 5000 919
Product Codes- NCZ-2642K

Poly(lactide-co-glycolide)-block-poly(ethylene glycol)-block-poly(lactide-co-glycolide) (PLGA85/15-PEG-PLGA85/15) (813989)

$919.00
Poly(lactide-co-glycolide)-block-poly(ethylene glycol)-block-poly(lactide-co-glycolide) (PLGA85/15-PEG-PLGA85/15) (813989) Appearance                    yellowish to tan irregular blocks PEG                          400, 1000, 1500, 2000, 4000, 6000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm 
   
Grade Mw of PLGA Mw of PEG Price($/20g)
PLGA-PEG-PLGA-01 2000-4000 400 919
PLGA-PEG-PLGA -02 5000-10,000 400 919
PLGA-PEG-PLGA -03 20,000-40,000 400 919
PLGA-PEG-PLGA -04 60,000-80,000 400 919
PLGA-PEG-PLGA -05 100,000-200,000 400 919
PLGA-PEG-PLGA -06 2000-4000 1000 919
PLGA-PEG-PLGA -07 5000-10,000 1000 919
PLGA-PEG-PLGA -08 20,000-40,000 1000 919
PLGA-PEG-PLGA -09 60,000-80,000 1000 919
PLGA-PEG-PLGA -10 100,000-200,000 1000 919
PLGA-PEG-PLGA -11 2000-4000 1500 919
PLGA-PEG-PLGA -12 5000-10,000 1500 919
PLGA-PEG-PLGA -13 20,000-40,000 1500 919
PLGA-PEG-PLGA -14 60,000-80,000 1500 919
PLGA-PEG-PLGA -15 100,000-200,000 1500 919
PLGA-PEG-PLGA -16 2000-4000 2000 919
PLGA-PEG-PLGA -17 5000-10,000 2000 919
PLGA-PEG-PLGA -18 20,000-40,000 2000 919
PLGA-PEG-PLGA -19 60,000-80,000 2000 919
PLGA-PEG-PLGA -20 100,000-200,000 2000 919
PLGA-PEG-PLGA -21 2000-4000 4000 919
PLGA-PEG-PLGA -22 5000-10,000 4000 919
PLGA-PEG-PLGA -23 20,000-40,000 4000 919
PLGA-PEG-PLGA -24 60,000-80,000 4000 919
PLGA-PEG-PLGA -25 100,000-200,000 4000 919
PLGA-PEG-PLGA -26 2000-4000 6000 919
PLGA-PEG-PLGA -27 5000-10,000 6000 919
PLGA-PEG-PLGA -28 20,000-40,000 6000 919
PLGA-PEG-PLGA -29 60,000-80,000 6000 919
PLGA-PEG-PLGA -30 100,000-200,000 6000 919
Product Codes- NCZ-2641K

Poly(lactide-co-glycolide)-block-poly(ethylene glycol)-block-poly(lactide-co-glycolide) (PLGA50/50-PEG-PLGA50/50) (811989)

$919.00
Poly(lactide-co-glycolide)-block-poly(ethylene glycol)-block-poly(lactide-co-glycolide) (PLGA50/50-PEG-PLGA50/50) (811989)Appearance                    yellowish to tan irregular blocks PEG                          400, 1000, 1500, 2000, 4000, 6000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm .
Grade Mw of PLGA Mw of PEG Price($/20g)
PLGA-PEG-PLGA-01 2000-4000 400 919
PLGA-PEG-PLGA -02 5000-10,000 400 919
PLGA-PEG-PLGA -03 20,000-40,000 400 919
PLGA-PEG-PLGA -04 60,000-80,000 400 919
PLGA-PEG-PLGA -05 100,000-200,000 400 919
 
PLGA-PEG-PLGA -06 2000-4000 1000 919
PLGA-PEG-PLGA -07 5000-10,000 1000 919
PLGA-PEG-PLGA -08 20,000-40,000 1000 919
PLGA-PEG-PLGA -09 60,000-80,000 1000 919
PLGA-PEG-PLGA -10 100,000-200,000 1000 919
 
PLGA-PEG-PLGA -11 2000-4000 1500 919
PLGA-PEG-PLGA -12 5000-10,000 1500 919
PLGA-PEG-PLGA -13 20,000-40,000 1500 919
PLGA-PEG-PLGA -14 60,000-80,000 1500 919
PLGA-PEG-PLGA -15 100,000-200,000 1500 919
 
PLGA-PEG-PLGA -16 2000-4000 2000 919
PLGA-PEG-PLGA -17 5000-10,000 2000 919
PLGA-PEG-PLGA -18 20,000-40,000 2000 919
PLGA-PEG-PLGA -19 60,000-80,000 2000 919
PLGA-PEG-PLGA -20 100,000-200,000 2000 919
 
PLGA-PEG-PLGA -21 2000-4000 4000 919
PLGA-PEG-PLGA -22 5000-10,000 4000 919
PLGA-PEG-PLGA -23 20,000-40,000 4000 919
PLGA-PEG-PLGA -24 60,000-80,000 4000 919
PLGA-PEG-PLGA -25 100,000-200,000 4000 919
PLGA-PEG-PLGA -26 2000-4000 6000 919
PLGA-PEG-PLGA -27 5000-10,000 6000 919
PLGA-PEG-PLGA -28 20,000-40,000 6000 919
PLGA-PEG-PLGA -29 60,000-80,000 6000 919
PLGA-PEG-PLGA -30 100,000-200,000 6000 919
Product Codes- NCZ-2640K

Methoxy poly(ethylene glycol)-b-poly(D,L-lactide)(mPEG-PLA) (721989)

$919.00
Methoxy poly(ethylene glycol)-b-poly(D,L-lactide)(mPEG-PLA) (721989)Appearance                    white irregular blocks m-PEG                        1900, 5000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm .
Grade Mw of PLA Mw of mPEG Price($/20g)
mPEG-PLA-01 2000-4000 1900 919
mPEG-PLA-02 5000-10,000 1900 919
mPEG-PLA-03 20,000-40,000 1900 919
mPEG-PLA-04 60,000-80,000 1900 919
mPEG-PLA-05 100,000-200,000 1900 919
mPEG-PLA-06 2000-4000 5000 919
mPEG-PLA-07 5000-10,000 5000 919
mPEG-PLA-08 20,000-40,000 5000 919
mPEG-PLA-09 60,000-80,000 5000 919
mPEG-PLA-10 100,000-200,000 5000 919
  Product Codes- NCZ-2639K

Polylactide-block-poly(ethylene glycol)-block-polylactide(PLA-PEG-PLA) (711989)

$919.00
Polylactide-block-poly(ethylene glycol)-block-polylactide(PLA-PEG-PLA) (711989) Appearance                    white irregular blocks PEG                          400, 1000, 1500, 2000, 4000, 6000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm  
Grade Mw of PLA Mw of PEG Price($/20g)
PLA-PEG-PLA-01 2000-4000 400 919
PLA-PEG-PLA-02 5000-10,000 400 919
PLA-PEG-PLA-03 20,000-40,000 400 919
PLA-PEG-PLA-04 60,000-80,000 400 919
PLA-PEG-PLA-05 100,000-200,000 400 919
PLA-PEG-PLA-06 2000-4000 1000 919
PLA-PEG-PLA-07 5000-10,000 1000 919
PLA-PEG-PLA-08 20,000-40,000 1000 919
PLA-PEG-PLA-09 60,000-80,000 1000 919
PLA-PEG-PLA-10 100,000-200,000 1000 919
PLA-PEG-PLA-11 2000-4000 1500 919
PLA-PEG-PLA-12 5000-10,000 1500 919
PLA-PEG-PLA-13 20,000-40,000 1500 919
PLA-PEG-PLA-14 60,000-80,000 1500 919
PLA-PEG-PLA-15 100,000-200,000 1500 919
PLA-PEG-PLA-16 2000-4000 2000 919
PLA-PEG-PLA-17 5000-10,000 2000 919
PLA-PEG-PLA-18 20,000-40,000 2000 919
PLA-PEG-PLA-19 60,000-80,000 2000 919
PLA-PEG-PLA-20 100,000-200,000 2000 919
PLA-PEG-PLA-21 2000-4000 4000 919
PLA-PEG-PLA-22 5000-10,000 4000 919
PLA-PEG-PLA-23 20,000-40,000 4000 919
PLA-PEG-PLA-24 60,000-80,000 4000 919
PLA-PEG-PLA-25 100,000-200,000 4000 919
PLA-PEG-PLA-26 2000-4000 6000 919
PLA-PEG-PLA-27 5000-10,000 6000 919
PLA-PEG-PLA-28 20,000-40,000 6000 919
PLA-PEG-PLA-29 60,000-80,000 6000 919
PLA-PEG-PLA-30 100,000-200,000 6000 919
 
Product Codes- NCZ-2638K

Zinc Sulfide (ZnS) Sputtering Target

Price range: $232.00 through $919.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Zinc Sulfide (ZnS) Sputtering Target

CAS No.

 1314-98-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

97.45 g/mol

Melting Point

~1,850 °C

Boiling Point

(~1,180–1,200 °C)

Density

~4.09 g/cm³

Product Codes

NCZ-1343K

Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$919.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Cellulose Nanocrystal (Nanocrystalline Cellulose,CNC)

Price range: $22.00 through $918.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/22 €                          25 grams/43 €         

3N (99.9%) 50nm Silicon (Si) Nanopowder

Price range: $225.00 through $915.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 3N (99.9%) 50nm Silicon (Si) Nanopowder
CAS No. 7440-21-3
Appearance Gray to black fine
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 50nm (Size Can be customized), Ask for other available size range.
Ingredient Si
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 2.33 g/cm3
Product Codes NCZ-159I
 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2”, Thickness: 0.250”

$914.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2'', Thickness: 0.250''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2558K

Germanium (Ge) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$914.00

Product 

Germanium (Ge) Sputtering Targets, indium, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 72.63 g/mol

Melting Point

 938.3 °C

Boiling Point

2,833 °C

Density

 5.32 g/cm³

Product Codes

NCZ-2235K