Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 8-18 nm

Price range: $33.00 through $1,035.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi-walled carbon nanotubes have numerous potential uses in various industries. Medicine, mechanics, electric-electronics, chemistry, energy, and other fields are among these uses. Drug delivery, biosensors, CNT composites, catalysis, nanoprobes, hydrogen storage, flat panel displays, supercapacitors, transistors, solar cells, photoluminescence, and templates are a few areas where it can be used.

Prime CZ-Si Wafer, Size: 6”, Orientation: (111), Boron Doped, Resistivity: 1-2 (ohm.cm), 1-Side Polished, Thickness: 675 ± 15 μm

Price range: $54.00 through $1,035.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/49 € 5 pieces/210 € 25 pieces/925 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 6”, Orientation: (111), Boron Doped, 1-Side Polished, Thickness: 675 ± 15 μm

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 6”
Orientation (111)
Coating  
Thickness (μm) 675 ± 15
Doping Boron
Resistivity (ohm.cm) 1-2
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.

Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,034.00

Product 

Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

12031-63-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 147.85 g/mol

Melting Point

~1,240–1,257 °C

Boiling Point

N/A

Density

~4.30 g/cm³ (ceramic); up to 4.65 g/cm³ (crystal)

Product Codes

NCZ-2037K

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 2”, Thickness: 0.125”

$1,030.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 2'', Thickness: 0.125''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2552K

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 3”, Thickness: 0.125”

$1,029.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 3'', Thickness: 0.125''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2551K

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,029.00

Product 

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

1317‑61‑9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 231.6 g/mol

Melting Point

~1,597 °C

Boiling Point

 ~2,623 °C (material may decompose before boiling)

Density

 ~5.17 g/cm³ (sintered target)

Product Codes

NCZ-2171K

(-COOH) Functionalized Multi Walled Carbon Nanotubes, Purity: > 96%, Outside Diameter: 48-78 nm

Price range: $27.00 through $1,029.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in;
  • Drug delivery,
  • Biosensors,
  • CNT composites,
  • Catalysis,
  • Nanoprobes,
  • Hydrogen storage,
  • Lithium batteries,
  • Gas-discharge tubes,
  • Flat panel displays,
  • Supercapacitors,
  • Transistors,
  • Solar cells,
  • Photoluminescence,
  • Templates.

Manganese Sputtering Target Mn

Price range: $303.00 through $1,025.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Manganese Sputtering Target Mn
CAS No. N/A
Appearance Silvery Metallic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Mn
Molecular Weight N/A
Melting Point 1,244 °C
Boiling Point N/A
Density 7.2 g/cm³
Product Codes NCZ-128H

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

$1,024.00

Product 

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.250''

CAS No.

 12201-04-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~234.77 g/mol

Melting Point

~1,770 °C (ceramic decomposes)

Boiling Point

N/A

Density

 ~6.25 g/cm³

Product Codes

NCZ-2085K

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.250”

$1,024.00

Product 

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 2'', Thickness: 0.250''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

 ~3.58 g/cm³

Product Codes

NCZ-1973K

Strontium Titanate (SrTiO3) Sputtering Targets, elastomer, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$1,023.00

Product 

Strontium Titanate (SrTiO3) Sputtering Targets, elastomer, Purity: 99.9%, Size: 1'', Thickness: 0.125''

CAS No.

12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

183.49 g/mol

Melting Point

 ~2080 °C

Boiling Point

N/A

Density

~5.12 g/cm³

Product Codes

NCZ-1669K

Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$1,022.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$1,021.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum Strontium Manganate (La0.9Sr0.1MnO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,020.00

Product 

Lanthanum Strontium Manganate (La0.9Sr0.1MnO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

68189-52-4 — generic CAS for La₁₋ₓSrₓMnO₃ perovskite system (x = 0.1–0.3)

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~237.53 g/mol (calculated for La₀.₉Sr₀.₁MnO₃)

Melting Point

 Approx. >1,300 °C

Boiling Point

N/A

Density

6.4–6.5 g/cm³ (typical bulk/sintered density)

Product Codes

NCZ-2095K

Holmium (Ho) Sputtering Target

Price range: $428.00 through $1,020.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Holmium (Ho) Sputtering Target

CAS No.

7440-60-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

164.930 g/mol

Melting Point

1,474 °C

Boiling Point

2,700 °C

Density

8.80 g/cm³

Product Codes

NCZ-1292K

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.125”

$1,020.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Formulated as BaTiO3, barium titanate is an inorganic substance. When formed as big crystals, barium titanate is clear and has a white powdery appearance. It is a ferroelectric ceramic material with piezoelectric and photorefractive characteristics. Titanate of barium sputtering Agents have various applications. For instance, barium titanate films, which are produced by sputtering targets, can be employed in particular electronic ceramics. Barium titanate can be utilized in the building of electrical devices such as sensors, capacitors, and detectors.

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.250”

$1,020.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Formulated as BaTiO3, barium titanate is an inorganic substance. When formed as big crystals, barium titanate is clear and has a white powdery appearance. It is a ferroelectric ceramic material with piezoelectric and photorefractive characteristics. Titanate of barium sputtering Agents have various applications. For instance, barium titanate films, which are produced by sputtering targets, can be employed in particular electronic ceramics. Barium titanate can be utilized in the building of electrical devices such as sensors, capacitors, and detectors.

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$1,020.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical formula for antimony telluride, an inorganic molecule, is Sb2Te3. It has a layered structure and is a grey crystalline solid. Weak van der Waals forces hold the layers together. They are made up of three atomic sheets of tellurium and two atomic sheets of antimony.

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.250”

$1,020.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,019.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 7”, Thickness: 0.125”

$1,018.00

Product 

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 7'', Thickness: 0.125''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

 ~3.58 g/cm³

Product Codes

NCZ-1964K

Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,017.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Manganese (Mn) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.250”

$1,015.00

Product 

Manganese (Mn) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.250''

CAS No.

 7439-96-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

54.93804 g/mol

Melting Point

 1,246 °C

Boiling Point

 2,061 °C

Density

 7.21 g/cm³

Product Codes

NCZ-1949K

Multi Walled Carbon Nanotubes Water Dispersion, 4 wt%, Purity: > 96%, OD: 3-13 nm, Length: 45 µm

Price range: $90.00 through $1,015.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

MWCNTs have numerous potential uses in various industries. Medical, mechanical, electric, chemical, energy, and other uses are among these. It can be used in the delivery of one medication, biosensors, CNT composites, catalysts, nanoprobes, hydrogen storage, nanomaterials for catalysis, eight gas discharge tubes, seven lithium batteries, nine-panel flat display, 11 transistors, 10 supercapacitors, twelve solar cells Photoluminescence 13 and template 14

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

$1,014.00

Product 

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.125''

CAS No.

 12201-04-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~234.77 g/mol

Melting Point

~1,770 °C (ceramic decomposes)

Boiling Point

N/A

Density

 ~6.25 g/cm³

Product Codes

NCZ-2086K

Reduced Graphene Oxide (rGO), S.A: 1562 m2/g, 2-5 layers

Price range: $54.00 through $1,014.00
Select options This product has multiple variants. The options may be chosen on the product page
Reduced Graphene Oxide (rGO) is derived by deoxygenation of graphene oxide via chemical, thermal, electrochemical process or through IR or UV irradiation to get a powder form. Reduced graphene oxide is the most suitable solution for bulk material applications such as energy storage thanks to be manufactured easily in large quantities with desired quantity level. For applications requiring the highest uniformity in size, we offer high purity of Reduced Graphene Oxide (rGO) with lowest prices.

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$1,013.00

Product 

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

1314-98-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 (ZnS) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

97.45 g/mol

Melting Point

~1700 °C

Boiling Point

N/A

Density

 4.09 g/cm³

Product Codes

NCZ-1502K

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$1,012.00

Product 

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.125''

CAS No.

12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

183.49 g/mol

Melting Point

 ~2080 °C

Boiling Point

N/A

Density

~5.12 g/cm³

Product Codes

NCZ-1684K

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$1,011.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Lanthanum nickel oxide with the chemical formula of LaNiO3 is an important perovskite-type oxide with metallic conductivity. Lanthanum nickel oxide is a ternary compound with unique chemical and physical properties. It shows an extended range of oxygen-deficient compositions, an uncommon intrinsic n-type metallic conductance, a perovskite crystal structure and thermal and chemical stability. These characteristics make LNO a technologically important perovskite oxide electrode in many potential applications such as ferroelectric thin film capacitors, solid oxide fuel cells, nonvolatile ferroelectric random access memories and multilayer actuators. Furthermore, LNO films have potential to be used as oxygen pressure and ethanol active sensing layers. Also, the reduced La–Ni mixed oxides are reported to be good catalyst precursors to synthesized organic compounds and to grow large amounts of regular diameter distribution controlled carbon nanotubes. Different chemical and physical thin film deposition techniques have been used to prepare LNO on various substrates. Chemical methods such as chemical vapor deposition, metallo-organic chemical vapor deposition and chemical solution deposition have been used to prepare LNO films. Physical methods such as sputtering, pulsed laser deposition and mist plasma evaporation have also been reported. Wet chemical solution deposition techniques provide simple and versatile alternative methods for thin film preparation.

Cadmium Sulfide (CdS) Sputtering Target

Price range: $440.00 through $1,010.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Cadmium Sulfide (CdS) Sputtering Target

CAS No.

1306-23-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

144.48 g/mol

Melting Point

~1,750 °C

Boiling Point

~980 °C

Density

~4.82 g/cm³

Product Codes

NCZ-1341K

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$1,008.00

Product 

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''

CAS No.

 12201-04-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~234.77 g/mol

Melting Point

~1,770 °C (ceramic decomposes)

Boiling Point

N/A

Density

 ~6.25 g/cm³

Product Codes

NCZ-2087K

Magnesium Oxide (MgO) Sputtering Targets, indium, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$1,008.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Magnesium Oxide (MgO) Sputtering Targets, indium, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$1,008.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in 1, 2-Propanediol, Size: 22 nm, Amorphous, 15 wt%

Price range: $54.00 through $1,008.00
Select options This product has multiple variants. The options may be chosen on the product page
30 ml/54 € 60 ml/119 € 120 ml/231 € 500 ml/656 € 1000 ml/1008 €         Please contact us for quotes on larger

Tantalum Oxide (Ta2O5) Sputtering Target

Price range: $375.00 through $1,007.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tantalum Oxide (Ta2O5) Sputtering Target

CAS No.

 1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

441.89 g/mol

Melting Point

~1,875 °C

Boiling Point

~3,000 °C

Density

~8.2 g/cm³

Product Codes

NCZ-1325K

Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in 1, 2-Propanediol, Size: 12 nm, Anatase, 22 wt%

Price range: $59.00 through $1,007.00
Select options This product has multiple variants. The options may be chosen on the product page
Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in 1, 2-Propanediol Size: 12 nm, Anatase, 22 wt%

Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0.001 – 0.005 (ohm.cm), 2- Polished, Thickness: 200 ± 10 μm

Price range: $54.00 through $1,007.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/49 € 5 pieces/195 € 25 pieces/900 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 2- Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (100)
Coating  
Thickness (μm) 200 ± 10 μm
Doping Boron
Resistivity (ohm.cm) 0.001 - 0.005
Polished Double Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,006.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,006.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

CHOOSE OPTIONS COMPARE QUICK VIEW Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,006.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs  in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,005.00

Product 

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

183.49 g/mol

Melting Point

 ~2080 °C

Boiling Point

N/A

Density

~5.12 g/cm³

Product Codes

NCZ-1678K

Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$1,005.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$1,003.00

Product 

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 3'', Thickness: 0.125''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2377K

Molybdenum Disulfide (MoS2) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,003.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$1,002.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$1,002.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.125”

$999.00

Product 

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.125''

CAS No.

12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

183.49 g/mol

Melting Point

 ~2080 °C

Boiling Point

N/A

Density

~5.12 g/cm³

Product Codes

NCZ-1672K

Tantalum Oxide (Ta2O5) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$999.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel Oxide (NiO) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$999.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, indium, Purity: 99.99%, Size: 4”, Thickness: 0.125′

$996.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 0.05 – 0.152 (ohm.cm), 2-Side Polished, Thickness: 365 ± 15 μm

Price range: $70.00 through $996.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (100)
Coating  
Thickness (μm) 365 ± 15
Doping Phosphor
Resistivity (ohm.cm) 0.05 - 0.152
Polished Double Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$995.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

One of the most promising multiferroic materials is bismuth ferrite, an inorganic chemical compound with a perovskite structure and the chemical formula BiFeO3. In order to create a one-phase material called bismuth ferrite (BiFeO3), a bismuth ferrite sputtering target is often manufactured by high temperature sinttering or recrystallizing the mixture of the oxide compound of Bi and Fe. For targets that are sputtering bismuth ferrite, indium bonding is advised.

Lithium Niobate (LiNbO3) Sputtering Target

Price range: $547.00 through $993.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lithium Niobate (LiNbO3) Sputtering Target

CAS No.

 12031-63-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

147.85 g/mol

Melting Point

~1,250 °C

Boiling Point

NA

Density

~4.65 g/cm³

Product Codes

NCZ-1319K

Lead Zirconate (PbZrO3) Sputtering Target

Price range: $566.00 through $993.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lead Zirconate (PbZrO3) Sputtering Target

CAS No.

 19824-65-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

303.5 g/mol

Melting Point

~1,250–1,300 °C

Boiling Point

NA

Density

~8.3–8.5 g/cm³

Product Codes

NCZ-1318K

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$992.00

Product 

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

183.49 g/mol

Melting Point

 ~2080 °C

Boiling Point

N/A

Density

~5.12 g/cm³

Product Codes

NCZ-1680K

Zirconium Carbide (ZrC) Sputtering Target

Price range: $390.00 through $991.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Zirconium Carbide (ZrC) Sputtering Target

CAS No.

 12070-14-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

103.23 g/mol

Melting Point

~3,530 °C

Boiling Point

 ~5,100 °C

Density

~6.59 g/cm³

Product Codes

NCZ-1339K

Zinc Oxide (ZnO) Sputtering Targets, indium, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$991.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

10 mL Oil-Soluble Silver (Ag) Nanoparticles, 0.1mg/mL

Price range: $803.00 through $990.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 10 mL Oil-Soluble Silver (Ag) Nanoparticles, 0.1mg/mL
CAS No. 7440-22-4
Appearance Black, dark gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Ag
Molecular Weight 107.87 g/mol
Melting Point N/A
Boiling Point N/A
Density 8.94 g/cm³
Product Codes NCZ-116I

Nickel Oxide (NiO) Sputtering Target

Price range: $357.00 through $990.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Nickel Oxide (NiO) Sputtering Target

CAS No.

1313-99-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

74.69 g/mol

Melting Point

~1,950 °C

Boiling Point

~2,730 °C

Density

~6.67 g/cm³

Product Codes

NCZ-1321K

Sulfonated Reduced Graphene Oxide Powder

Price range: $589.00 through $989.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Sulfonated Reduced Graphene Oxide Powder
CAS No. N/A
Appearance Black or dark gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 0.5–10µm (Size Can be customized),  Ask for other available size range.
Ingredient CₓOySz
Molecular Weight N/A
Melting Point 1477 °C
Boiling Point N/A
Density 0.2–0.4 g/cm³
Product Codes NCZ-543I