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Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (111), Phosphor Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1000 nm

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Price range: $76.00 through $1,278.00
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Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (111), Phosphor Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1000 nm
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Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

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$1,277.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Upconverting Nanoparticles Water Solution, 10mg/bottle
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Upconverting Nanoparticles Water Solution, 10mg/bottle

$1,276.00
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Product Upconverting Nanoparticles Water Solution, 10mg/bottle
CAS No. N/A
Appearance Ivory-white to pale color
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 25nm (Size Can be customized),  Ask for other available size range.
Ingredient NaYF₄:Yb³⁺,Er³⁺
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-591I
NH2 Modified Upconverting Nanoparticles Water Solution, 10mg/bottle
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NH2 Modified Upconverting Nanoparticles Water Solution, 10mg/bottle

$1,276.00
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Product NH2 Modified Upconverting Nanoparticles Water Solution, 10mg/bottle
CAS No. N/A
Appearance Clear to slightly opalescent
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20–50nm ( (Size Can be customized),  Ask for other available size range.
Ingredient NaYF₄
Molecular Weight 188 g/mol
Melting Point N/A
Boiling Point N/A
Density 4.2–4.3 g/cm³
Product Codes NCZ-475I
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Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

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$1,275.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material's composition and even detect incredibly low impurity quantities.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound barium zirconate has the formula BaZrO3. An electroceramic, or family of ceramic materials principally employed for their electrical capabilities, is what barium zirconate is. Applications for barium zirconate sputtering targets include semiconductors, photonic, and physical and chemical vapor deposition (PVD) as well as CVD and PVD displays. Barium zirconate sputtering targets can also be employed for ferroelectric applications.

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Zinc Selenide Quantum Dots (ZnSe/ZnS QD) 420 nm

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Price range: $540.00 through $1,275.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS Due to their distinct qualities, ZnSe QDs are utilized in:
  • Light emmiting diodes (LEDs),
  • Photocatalysts,
  • Solar cells,
  • Biological markers,
  • Scintillators,
  • Sensors.
Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''
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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$1,272.00
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Product 

 Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

1314-35-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 231.84 g/mol

Melting Point

1,473 °C

Boiling Point

1,700–1,850 °C

Density

 7.16 g/cm³

Product Codes

NCZ-1571K
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Indium Phosphide Quantum (InP/ZnS QD) Dots 625 nm

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Price range: $535.00 through $1,270.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS InPQDs are employed in because of their electrical and optical characteristics in:
  • Light emitting diodes (LEDs),
  • Biomedical applications like bioimaging,
  • Electronic devices,
  • Solar cells.
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Carbon Quantum Dots (CQD) 572 nm

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Price range: $710.00 through $1,270.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS Carbon quantum dots are employed in the following because of their optical, electrical, and biological characteristics:
  • Bioimaging,
  • Photovoltaics,
  • Photocatalysis,
  • Drug delivery,
  • Sensors,
  • Optronics.
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Multi Walled Carbon Nanotubes Ethanol Dispersion, 4 wt%, Purity: > 96%, OD: 3-13 nm, Length: 45 µm

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Price range: $276.00 through $1,268.00
Select options This product has multiple variants. The options may be chosen on the product page
15 ml/251 € 30 ml/410 € 60 ml/710 € 120 ml/1150 € Please contact us for quotes on larger quantities !!!

Multi Walled Carbon Nanotubes Ethanol Dispersion

4 wt%, Purity: > 96+ %, OD: 3-13 nm, Length: 45 µm

Technical Properties:

Purity > 96+ %
Color black
Average Outside Diameter (nm) 3-13
Average Inside Diameter (nm) 3.0-5.0
Length (µm) 45
Tap Density (g/cm3) 0.30
True Density (g/cm3) 2.4
Specific Surface Area (m2/g) 240
Ash < 1.5 wt%
Electrical Conductivity (S/cm) > 98
Manufacturing Method CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template  
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Multi Walled Carbon Nanotubes Ethanol Dispersion, 4 wt%, Purity: > 96 %, OD: 45-75 nm,Length 8-28 µm

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Price range: $277.00 through $1,268.00
Select options This product has multiple variants. The options may be chosen on the product page
15 ml/252 € 30 ml/420 €  60 ml/720 € 120 ml/1150 €  
Please contact us for quotes on larger quantities !!!

Multi Walled Carbon Nanotubes Ethanol Dispersion

4 wt%, Purity: > 96+ %, OD: 45-75 nm, Length 8-28 µm

Technical Properties:

Purity > 96+ %
Color black
Average Outside Diameter (nm) 45-75
Average Inside Diameter (nm) 5.0-10.0
Length (μm) 8-28
Tap Density (g/cm3) 0.30
True Density (g/cm3) 2.4
Specific Surface Area (m2/g) 50
Ash < 1.5 wt%
Electrical Conductivity (S/cm) > 98
Manufacturing Method CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include midicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug dilevery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium battaries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template  
Nickel Oxide (NiO) Sputtering Targets, indium, Purity: 99.95%, Size: 2'', Thickness: 0.125''
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Nickel Oxide (NiO) Sputtering Targets, indium, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$1,266.00
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Product 

 Nickel Oxide (NiO) Sputtering Targets, indium, Purity: 99.95%, Size: 2'', Thickness: 0.125''

CAS No.

1313-99-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~3–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 74.69 g/mol

Melting Point

1,950 °C

Boiling Point

 2,730 °C

Density

  6.67 g/cm³

Product Codes

NCZ-1832K
Indium Oxide (In2O3) Sputtering Target
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Indium Oxide (In2O3) Sputtering Target

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Price range: $339.00 through $1,265.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

 Indium Oxide (In2O3) Sputtering Target

CAS No.

1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 277.64 g/mol

Melting Point

~1,910 °C

Boiling Point

~3,000 °C

Density

 ~7.18 g/cm³

Product Codes

NCZ-1316K
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Multi Walled Carbon Nanotubes N-Methyl-2-Pyrrolidinone Dispersion, 4 wt%, Purity: > 96%, OD: 4-13 nm, Length: 45 µm

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Price range: $315.00 through $1,265.00
Select options This product has multiple variants. The options may be chosen on the product page
Multi Walled Carbon Nanotubes N-Methyl-2-Pyrrolidinone Dispersion 4 wt%, Purity: > 96+ %, OD: 4-13 nm, Length: 45 µm Technical Properties: Purity
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Multi Walled Carbon Nanotubes Ethanol Dispersion, 4 wt%, Purity: > 96 %, OD: 45-75 nm,Length 8-28 µm

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Price range: $278.00 through $1,265.00
Select options This product has multiple variants. The options may be chosen on the product page
Multi Walled Carbon Nanotubes Ethanol Dispersion 4 wt%, Purity: > 96+ %, OD: 45-75 nm, Length 8-28 µm Technical Properties: Purity
La-substituted Bismuth Ferrite Sputtering Target Bi0.85La0.15FeO3
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La-substituted Bismuth Ferrite Sputtering Target Bi0.85La0.15FeO3

$1,262.00
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Product La-substituted Bismuth Ferrite Sputtering Target Bi0.85La0.15FeO3
CAS No. 12010-42-3
Appearance Gray ceramic targets
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Bi0.85La0.15FeO3
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-123H
Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 4'', Thickness: 0.125''
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Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$1,261.00
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Product 

 Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 4'', Thickness: 0.125''

CAS No.

 409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  40.10 g/mol

Melting Point

~2,700 °C

Boiling Point

N/A

Density

 ~3.21 g/cm³

Product Codes

NCZ-1720K
Titanium Monoxide (TiO) Sputtering Target
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Titanium Monoxide (TiO) Sputtering Target

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Price range: $335.00 through $1,259.00
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Product 

 Titanium Monoxide (TiO) Sputtering Target

CAS No.

12036-80-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  63.86 g/mol

Melting Point

~1,750 °C

Boiling Point

N\A

Density

 ~4.93 g/cm³

Product Codes

NCZ-1327K
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Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 5”, Thickness: 0.250”

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$1,257.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When etching anisotropy is high, sputter etching is the preferred method.

is required, and selectivity is unimportant. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Multi Walled Carbon Nanotubes Water Dispersion, 4 wt%, Purity: > 96%, OD: 18-28 nm, Length: 8-35 um

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Price range: $71.00 through $1,257.00
Select options This product has multiple variants. The options may be chosen on the product page
30 ml/65 € 60 ml/120 €                         120 ml/185 €                      500 ml/660 €                   1000 ml/1140 € Please contact us for quotes on larger quantities !!!

Multi Walled Carbon Nanotubes Water Dispersion

4 wt%, Purity: > 96+ %, OD: 18-28 nm, Length: 8-35 µm

Multi Walled Carbon NanoTubes Water Dispersion is obtained by dispersing MWCNT in deionized water without the addition of any surfactant. MWCNT water dispersions appear to have great industrial and medical potential. Dispersion of MWCNT in water is widely used inmass production because of its excellent mechanical and electrical properties. Our company sells multi walled carbon nanotubes water dispersion with various options.

Technical Properties:

Purity >96+ %
Color black
Average Outside Diameter (nm) 18-28
Average Inside Diameter (nm) 5.0-10.0
Length (µm) 8-35
Tap Density (g/cm3) 0.30
True Density (g/cm3) 2.4
Specific Surface Area (m2/g) 120
Ash <1.5 wt%
Electrical Conductivity (S/cm) >98
Manufacturing Method CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in drug delivery, biosensors, CNT composites, catalysis, nanoprobes, hydrogen storage, lithium batteries, gas-discharge tubes, flat panel display, supercapacitor, transistors, solar cells, photoluminescence, template.
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Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

, ,
$1,256.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

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$1,256.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Lanthanum nickel oxide with the chemical formula of LaNiO3 is an important perovskite-type oxide with metallic conductivity. Lanthanum nickel oxide is a ternary compound with unique chemical and physical properties. It shows an extended range of oxygen-deficient compositions, an uncommon intrinsic n-type metallic conductance, a perovskite crystal structure and thermal and chemical stability. These characteristics make LNO a technologically important perovskite oxide electrode in many potential applications such as ferroelectric thin film capacitors, solid oxide fuel cells, nonvolatile ferroelectric random access memories and multilayer actuators. Furthermore, LNO films have potential to be used as oxygen pressure and ethanol active sensing layers. Also, the reduced La–Ni mixed oxides are reported to be good catalyst precursors to synthesized organic compounds and to grow large amounts of regular diameter distribution controlled carbon nanotubes. Different chemical and physical thin film deposition techniques have been used to prepare LNO on various substrates. Chemical methods such as chemical vapor deposition, metallo-organic chemical vapor deposition and chemical solution deposition have been used to prepare LNO films. Physical methods such as sputtering, pulsed laser deposition and mist plasma evaporation have also been reported. Wet chemical solution deposition techniques provide simple and versatile alternative methods for thin film preparation.
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Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

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$1,255.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

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Zinc Selenide Quantum Dots (ZnSe/ZnS QD) 450 nm

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Price range: $530.00 through $1,255.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS Due to their distinct qualities, ZnSe QDs are utilized in:
  • Light emmiting diodes (LEDs),
  • Photocatalysts,
  • Solar cells,
  • Biological markers,
  • Scintillators,
  • Sensors.
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Carbon Quantum Dots (CQD) 625 nm

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Price range: $695.00 through $1,255.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS Carbon quantum dots are employed in the following because of their optical, electrical, and biological characteristics:
  • Bioimaging,
  • Photovoltaics,
  • Photocatalysis,
  • Drug delivery,
  • Sensors,
  • Optronics.
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Zinc Sulfide (ZnS) Sputtering Targets, indium, Purity: 99.99%, Size: 3'', Thickness: 0.125''
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Zinc Sulfide (ZnS) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$1,252.00
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Product 

 Zinc Sulfide (ZnS) Sputtering Targets, indium, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

1314-98-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 (ZnS) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 97.45 g/mol

Melting Point

~1700 °C

Boiling Point

N/A

Density

  4.09 g/cm³

Product Codes

NCZ-1500K
Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''
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Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$1,251.00
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Product 

 Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1–5 μm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 237.66 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

 ~6.4–6.8 g/cm³

Product Codes

NCZ-1778K
Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''
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Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$1,250.00
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Product 

 Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.
 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~233.19 g/mol

Melting Point

 ~1625 °C

Boiling Point

N/A

Density

  ~6.02 g/cm³

Product Codes

NCZ-2459K
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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

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$1,250.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

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$1,250.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.250”

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$1,250.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

Mass spectrometry is used to measure and identify individual atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

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$1,250.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Lanthanum nickel oxide with the chemical formula of LaNiO3 is an important perovskite-type oxide with metallic conductivity. Lanthanum nickel oxide is a ternary compound with unique chemical and physical properties. It shows an extended range of oxygen-deficient compositions, an uncommon intrinsic n-type metallic conductance, a perovskite crystal structure and thermal and chemical stability. These characteristics make LNO a technologically important perovskite oxide electrode in many potential applications such as ferroelectric thin film capacitors, solid oxide fuel cells, nonvolatile ferroelectric random access memories and multilayer actuators. Furthermore, LNO films have potential to be used as oxygen pressure and ethanol active sensing layers. Also, the reduced La–Ni mixed oxides are reported to be good catalyst precursors to synthesized organic compounds and to grow large amounts of regular diameter distribution controlled carbon nanotubes. Different chemical and physical thin film deposition techniques have been used to prepare LNO on various substrates. Chemical methods such as chemical vapor deposition, metallo-organic chemical vapor deposition and chemical solution deposition have been used to prepare LNO films. Physical methods such as sputtering, pulsed laser deposition and mist plasma evaporation have also been reported. Wet chemical solution deposition techniques provide simple and versatile alternative methods for thin film preparation.
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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

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$1,250.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
Nickel Oxide (NiO) Sputtering Targets, indium, Purity: 99.98%, Size: 2'', Thickness: 0.125''
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Nickel Oxide (NiO) Sputtering Targets, indium, Purity: 99.98%, Size: 2”, Thickness: 0.125”

$1,249.00
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Product 

 Nickel Oxide (NiO) Sputtering Targets, indium, Purity: 99.98%, Size: 2'', Thickness: 0.125''

CAS No.

1313-99-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~3–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 74.69 g/mol

Melting Point

1,950 °C

Boiling Point

 2,730 °C

Density

  6.67 g/cm³

Product Codes

NCZ-1833K
4N (99.99%) Tin (Sn) Pellets Evaporation Materials
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4N (99.99%) Tin (Sn) Pellets Evaporation Materials

Price range: $269.00 through $1,249.00
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Product 4N (99.99%) Tin (Sn) Pellets Evaporation Materials
CAS No. 7440-31-5
Appearance Light Yellow Crystal Granule
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1-3mm (Size Can be customized),  Ask for other available size range.
Ingredient Sn
Molecular Weight 118.71 g/mol
Melting Point N/A
Boiling Point N/A
Density 7.31 g/cm³
Product Codes NCZ-174I
 
Terbium (Tb) Sputtering Target
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Terbium (Tb) Sputtering Target

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Price range: $510.00 through $1,249.00
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Product 

 Terbium (Tb) Sputtering Target

CAS No.

7440-27-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 158.93 g/mol

Melting Point

1,356 °C

Boiling Point

3,123 °C

Density

  8.23 g/cm³

Product Codes

NCZ-1362K
Dysprosium (Dy) Sputtering Target
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Dysprosium (Dy) Sputtering Target

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Product 

 Dysprosium (Dy) Sputtering Target

CAS No.

 7429-91-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 162.5 g/mol

Melting Point

1,407 °C

Boiling Point

2,567 °C

Density

 8.55 g/cm³

Product Codes

NCZ-1353K
Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.250''
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Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$1,245.00
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Product 

 Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.250''

CAS No.

12031‑18‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  ~245.6 g/mol

Melting Point

Decomposes at ~1300–1500 °C

Boiling Point

N/A

Density

  ~6.5–7.0 g/cm³

Product Codes

NCZ-2116K
MWNTs -COOH Functionalized 95% 50-100 nm
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MWNTs -COOH Functionalized 95% 50-100 nm

Price range: $175.00 through $1,245.00
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$175/5g
$375/25g
$1245/100g

Product 

 MWNTs -COOH Functionalized 95% 50-100 nm

CAS No.

7727-54-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

50-100 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 228.20 g/mol

Melting Point

 ~120 °C

Boiling Point

N/A

Density

  1.98 g/cm³

Product Codes

NCZ-1274K
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Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

, ,
$1,245.00
Add to cart

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Lanthanum nickel oxide with the chemical formula of LaNiO3 is an important perovskite-type oxide with metallic conductivity. Lanthanum nickel oxide is a ternary compound with unique chemical and physical properties. It shows an extended range of oxygen-deficient compositions, an uncommon intrinsic n-type metallic conductance, a perovskite crystal structure and thermal and chemical stability. These characteristics make LNO a technologically important perovskite oxide electrode in many potential applications such as ferroelectric thin film capacitors, solid oxide fuel cells, nonvolatile ferroelectric random access memories and multilayer actuators. Furthermore, LNO films have potential to be used as oxygen pressure and ethanol active sensing layers. Also, the reduced La–Ni mixed oxides are reported to be good catalyst precursors to synthesized organic compounds and to grow large amounts of regular diameter distribution controlled carbon nanotubes. Different chemical and physical thin film deposition techniques have been used to prepare LNO on various substrates. Chemical methods such as chemical vapor deposition, metallo-organic chemical vapor deposition and chemical solution deposition have been used to prepare LNO films. Physical methods such as sputtering, pulsed laser deposition and mist plasma evaporation have also been reported. Wet chemical solution deposition techniques provide simple and versatile alternative methods for thin film preparation.
Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 3'', Thickness: 0.125''
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Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$1,244.00
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Product 

 Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 3'', Thickness: 0.125''

CAS No.

 409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  40.10 g/mol

Melting Point

~2,700 °C

Boiling Point

N/A

Density

 ~3.21 g/cm³

Product Codes

NCZ-1721K
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CR2450 Coin Cell Cases with 304SS (Positive+Negative Cases), Diameter: 24 mm, Height : 5 mm

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Price range: $190.00 through $1,240.00
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100 set: 190€ 500 set: 800€ 1000 set: 1240€ Technical Properties: Diameter 24 mm Height 5 mm Material 304SS
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm

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Price range: $60.00 through $1,240.00
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1 piece/55 € 5 pieces/245 € 25 pieces/1125 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 150 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
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Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 150 nm

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Price range: $63.00 through $1,240.00
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1 piece/58 € 5 pieces/245 € 25 pieces/1125 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size(inch) 3”
Orientation (100)
Coating 150 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
Gadolinium (III) Oxide (Gd2O3) 99.999% 5N Powder
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Gadolinium (III) Oxide (Gd2O3) 99.999% 5N Powder

Price range: $143.00 through $1,239.00
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Product Gadolinium (III) Oxide (Gd2O3) 99.999% 5N Powder
CAS No. 12064-62-9
Appearance White odorless
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20–80nm (Size Can be customized),  Ask for other available size range.
Ingredient Gd2O3
Molecular Weight 362.50 g/mol
Melting Point N/A
Boiling Point N/A
Density 7.07 g/cm³
Product Codes NCZ-349I
 
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Magnetic Graphene Aerogel, Content of Fe3O4: 50%, Diameter: 2±0.4 cm

Price range: $267.00 through $1,239.00
Select options This product has multiple variants. The options may be chosen on the product page
Please contact us for quotes for larger quantities !   This aerogel is a self-assembled, 3d porous foam material with high quality sheet layer < 3 graphene oxide and Fe3O4 nanoparticles as raw materials. The aerogel has micron-sized macropores and nano-sized mesoporous pores to form a rich compound void structure. With stable chemical properties, large specific surface area and abundant pores, this aerogel is suitable for the adsorption of copper, chromium, lead and other heavy metals in water. Please Click for TDS
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CR2325 Coin Cell Cases with 304SS (Positive+Negative Cases), Diameter: 23 mm, Height : 2.5 mm

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Price range: $182.00 through $1,238.00
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100 set:182€ 500 set: 800€ 1000 set:1238€ Technical Properties: Diameter 23 mm Height 2.5 mm Material 304SS  
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CR2016 Coin Cell Cases with 304SS (Positive+Negative Cases), Diameter: 20 mm, Height : 1.6 mm

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Price range: $182.00 through $1,238.00
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100 set:182€ 500 set: 800€ 1000 set:1238€ Technical Properties: Diameter 20 mm Height 1.6 mm Material 304SS
Placeholder
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PTFE Separator Film for Battery Applications Thickness: 50μm, Width: 60mm, Length: 600 m, 1 roll: 600 m

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Price range: $358.00 through $1,238.00
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Product Information Product Name PTFE Separator Film for Battery Applications Thickness 50μm Width 60mm±0.005 Length 600m Product No NG10BEW0942 Elongation
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Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

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Price range: $78.00 through $1,237.00
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1 piece/71 € 5 pieces/255 € 25 pieces/1115 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 1500 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''
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Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,234.00
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Product 

 Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

12626-81-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~303.1 g/mol

Melting Point

 ~1,250°C – 1,350°C

Boiling Point

N/A

Density

  ~7.75–8.0 g/cm³

Product Codes

NCZ-2066K
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Niobium (Nb) Micron Powder Purity: 99.95%, Size: 325 mesh

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Price range: $107.00 through $1,234.00
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25 grams/95 € 100 grams/265 € 500 grams/645 € 1000 grams/1095 €
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Magnetic Graphene Aerogel, Content of Fe3O4: 65%, Diameter: 2±0.4 cm

Price range: $266.00 through $1,233.00
Select options This product has multiple variants. The options may be chosen on the product page
Please contact us for quotes for larger quantities !   This aerogel is a self-assembled, 3d porous foam material with high quality sheet layer < 3 graphene oxide and Fe3O4 nanoparticles as raw materials. The aerogel has micron-sized macropores and nano-sized mesoporous pores to form a rich compound void structure. With stable chemical properties, large specific surface area and abundant pores, this aerogel is suitable for the adsorption of copper, chromium, lead and other heavy metals in water.
Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.250''
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Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.250”

$1,232.00
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Product 

 Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.250''

CAS No.

12031‑18‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  ~245.6 g/mol

Melting Point

Decomposes at ~1300–1500 °C

Boiling Point

N/A

Density

 ~6.3–7.0 g/cm³ (≥90% theoretical)

Product Codes

NCZ-2114K
Lithium Titanate (Li2TiO3) Powder, 99% 2N
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Lithium Titanate (Li2TiO3) Powder, 99% 2N

Price range: $364.00 through $1,232.00
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Product Lithium Titanate (Li2TiO3) Powder, 99% 2N
CAS No. 12031-82-2
Appearance White to light gray fine
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100nm (Size Can be customized),  Ask for other available size range.
Ingredient Li2TiO3
Molecular Weight 109.75 g/mol
Melting Point 1,250 °C
Boiling Point N/A
Density 3.4 g/cm³
Product Codes NCZ-446I
 
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Lithium Lanthanum Zirconate (LLZO, Li7La3Zr2O12), Purity: ≥99.5, Size: 0.3 -1 µm

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Price range: $175.00 through $1,232.00
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Product Information Product Name Lithium Lanthanum Zirconate (LLZO, Li7La3Zr2O12) Size 0.3 -1 µm Purity ≥99.5 Product No NG10BEW0958 Appearance White Powder
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Prime CZ-Si Wafer, Size: 8”, Orientation: (100), Boron Doped, Resistivity: 6,5-9 (ohm.cm), 1-Side Polished, Thickness: 725 ± 20 μm

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Price range: $62.00 through $1,231.00
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1 piece/56 € 5 pieces/240 € 25 pieces/1100 € Please contact us for quotes on larger quantities !!! 

Prime CZ-Si Wafer

Size: 8”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 725 ± 20 μm

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 8”
Orientation (100)
Coating  
Thickness (μm) 725 ± 20 μm
Doping Boron
Resistivity (ohm.cm) 6,5-9
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
Molybdenum Disilicide (MoSi2) Sputtering Targets, indium, Purity: 99.95%, Size: 3'', Thickness: 0.125''
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Molybdenum Disilicide (MoSi2) Sputtering Targets, indium, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$1,230.00
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Product 

 Molybdenum Disilicide (MoSi2) Sputtering Targets, indium, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

12136-78-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 152.11 g/mol

Melting Point

 ~2030 °C

Boiling Point

 ~2300 °C to 2500 °C

Density

 ~6.26 g/cm³

Product Codes

NCZ-1921K
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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.125”

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$1,230.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

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$1,230.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.