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Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''
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Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$1,170.00
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 Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

 7440-22-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 107.87 g/mol

Melting Point

 961.78 °C

Boiling Point

 2162 °C

Density

  10.49 g/cm³

Product Codes

NCZ-1687K
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Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 4”, Thickness: 0.125”

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$1,171.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.
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Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 4”, Thickness: 0.125”

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$1,171.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound aluminum nitride has the formula AlN. The combination of mechanical, chemical, and physical properties of aluminum nitride is exceptional. Superior aluminum nitride films have found application in a wide range of sensors and devices, including optoelectronic and optical ones. Regarding optical and optoelectronic applications, AlN is a very desirable material due to its broad band gap (~6.2 eV), high refractive index (~2.0), and low absorption coefficient (<10−3).

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''
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Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$1,174.00
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 Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1–5 μm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 237.66 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

 ~6.4–6.8 g/cm³

Product Codes

NCZ-1780K
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Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 3'', Thickness: 0.125''
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Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,175.00
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 Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

1314‑62‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 181.88 g/mol

Melting Point

690 °C

Boiling Point

~1750 °C

Density

 ~3.35 g/cm³

Product Codes

NCZ-1532K
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Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”, Beige to White

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$1,176.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

, , ,
$1,176.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.250''
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Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.250”

$1,176.00
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 Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.250''

CAS No.

 12201-04-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 234.80 g/mol

Melting Point

~1,770 °C (ceramic decomposes)

Boiling Point

N/A

Density

  ~6.5–6.6 g/cm³

Product Codes

NCZ-2081K
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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

, ,
$1,177.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

, ,
$1,177.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

~4.64–4.65 g/cm³ (single crystal), ~4.30 g/cm³ (ceramic target)
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Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$1,178.00
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 Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''

CAS No.

12031-63-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  147.85 g/mol

Melting Point

~1,240–1,257 °C

Boiling Point

N/A

Density

 ~4.64–4.65 g/cm³ (single crystal), ~4.30 g/cm³ (ceramic target)

Product Codes

NCZ-2036K
Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''
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Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$1,178.00
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 Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

 68189‑52‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ≈ 234.47–234.90 g/mol

Melting Point

 ~1300–1400 °C

Boiling Point

N/A

Density

 ~6.3–6.5 g/cm³

Product Codes

NCZ-2101K
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Manganese (Mn) Sputtering Targets, indium, Purity: 99.95%, Size: 3”, Thickness: 0.125”

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$1,179.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''
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Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,179.00
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Product 

 Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1–5 μm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 237.66 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

 ~6.4–6.8 g/cm³

Product Codes

NCZ-1779K
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Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.250”

, , ,
$1,180.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

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Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

, ,
$1,182.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

An inorganic substance is lead zirconium titanate. This ceramic perovskite material has a strong piezoelectric effect, which means that when an electric field is applied, the compound changes shape. Lead zirconium titanate is employed in a number of practical applications such as ultrasonic transducers and piezoelectric resonators.

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''
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Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$1,183.00
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 Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.
12068-69-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 626.32 g/mol

Melting Point

 620 °C

Boiling Point

N/A

Density

 6.50 g/cm³

Product Codes

NCZ-2496K
Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 4'', Thickness: 0.125''
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Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,184.00
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 Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.
7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  10.81 g/mol

Melting Point

 ~2076 °C

Boiling Point

 ~3927 °C

Density

  ~2.34 g/cm³

Product Codes

NCZ-2387K
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Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

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$1,188.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 5'', Thickness: 0.250''
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Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.250”

$1,188.00
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Product 

 Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 5'', Thickness: 0.250''

CAS No.
 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~233.19 g/mol

Melting Point

 ~1625 °C

Boiling Point

N/A

Density

  ~6.02 g/cm³

Product Codes

NCZ-2457K
Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 5'', Thickness: 0.125''
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Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.125”

$1,188.00
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Product 

 Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 5'', Thickness: 0.125''

CAS No.
 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~233.19 g/mol

Melting Point

 ~1625 °C

Boiling Point

N/A

Density

  ~6.02 g/cm³

Product Codes

NCZ-2458K
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Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.125”

, , ,
$1,190.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

Using mass spectrometry, the identification and concentration of spewed atoms are determined. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

One of the most promising inorganic chemical compounds is bismuth ferrite, or BiFeO3, an inorganic compound having a perovskite structure.

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Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.125”

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$1,190.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation.

In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering. One of the most promising multiferroic materials is bismuth ferrite, an inorganic chemical compound with a perovskite structure and the chemical formula BiFeO3. In order to create a one-phase material called bismuth ferrite (BiFeO3), a bismuth ferrite sputtering target is often manufactured by high temperature sinttering or recrystallizing the mixture of the oxide compound of Bi and Fe. For targets that are sputtering bismuth ferrite, indium bonding is advised.

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Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

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$1,192.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

, ,
$1,194.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Lanthanum nickel oxide with the chemical formula of LaNiO3 is an important perovskite-type oxide with metallic conductivity. Lanthanum nickel oxide is a ternary compound with unique chemical and physical properties. It shows an extended range of oxygen-deficient compositions, an uncommon intrinsic n-type metallic conductance, a perovskite crystal structure and thermal and chemical stability. These characteristics make LNO a technologically important perovskite oxide electrode in many potential applications such as ferroelectric thin film capacitors, solid oxide fuel cells, nonvolatile ferroelectric random access memories and multilayer actuators. Furthermore, LNO films have potential to be used as oxygen pressure and ethanol active sensing layers. Also, the reduced La–Ni mixed oxides are reported to be good catalyst precursors to synthesized organic compounds and to grow large amounts of regular diameter distribution controlled carbon nanotubes. Different chemical and physical thin film deposition techniques have been used to prepare LNO on various substrates. Chemical methods such as chemical vapor deposition, metallo-organic chemical vapor deposition and chemical solution deposition have been used to prepare LNO films. Physical methods such as sputtering, pulsed laser deposition and mist plasma evaporation have also been reported. Wet chemical solution deposition techniques provide simple and versatile alternative methods for thin film preparation.
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Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

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$1,194.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Lanthanum nickel oxide with the chemical formula of LaNiO3 is an important perovskite-type oxide with metallic conductivity. Lanthanum nickel oxide is a ternary compound with unique chemical and physical properties. It shows an extended range of oxygen-deficient compositions, an uncommon intrinsic n-type metallic conductance, a perovskite crystal structure and thermal and chemical stability. These characteristics make LNO a technologically important perovskite oxide electrode in many potential applications such as ferroelectric thin film capacitors, solid oxide fuel cells, nonvolatile ferroelectric random access memories and multilayer actuators. Furthermore, LNO films have potential to be used as oxygen pressure and ethanol active sensing layers. Also, the reduced La–Ni mixed oxides are reported to be good catalyst precursors to synthesized organic compounds and to grow large amounts of regular diameter distribution controlled carbon nanotubes. Different chemical and physical thin film deposition techniques have been used to prepare LNO on various substrates. Chemical methods such as chemical vapor deposition, metallo-organic chemical vapor deposition and chemical solution deposition have been used to prepare LNO films. Physical methods such as sputtering, pulsed laser deposition and mist plasma evaporation have also been reported. Wet chemical solution deposition techniques provide simple and versatile alternative methods for thin film preparation.
Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.250''
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Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.250”

$1,196.00
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Product 

 Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.250''

CAS No.

1317‑61‑9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  231.6 g/mol

Melting Point

~1,597 °C

Boiling Point

 ~2,623 °C (material may decompose before boiling)

Density

  ~5.17 g/cm³ (sintered target)

Product Codes

NCZ-2164K
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Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

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$1,197.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

An inorganic substance is lead zirconium titanate. This ceramic perovskite material has a strong piezoelectric effect, which means that when an electric field is applied, the compound changes shape. Lead zirconium titanate is employed in a number of practical applications such as ultrasonic transducers and piezoelectric resonators.

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Chromium Oxide (Cr2O3) Sputtering Targets, Purity: 99.8%, Size: 4”, Thickness: 0.125”

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$1,198.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The inorganic chemical with the formula Cr2O3 is chromium oxide. Applications for chromium oxide sputtering targets are numerous. Instead, let's examine a few instances that make advantage of chromium oxide sputtering targets. Low friction coefficients and high hardness values are displayed by Cr2O3 thin films. Because of these characteristics, chromium oxide is a strong contender to take the place of Al2O3 or transition metal nitrides in some applications.

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''
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Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$1,198.00
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Product 

 Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

CAS No.

 12201-04-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~234.77 g/mol

Melting Point

~1,770 °C (ceramic decomposes)

Boiling Point

N/A

Density

  ~6.25 g/cm³

Product Codes

NCZ-2089K
Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''
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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$1,199.00
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Product 

 Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

1314-35-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 231.84 g/mol

Melting Point

1,473 °C

Boiling Point

1,700–1,850 °C

Density

 7.16 g/cm³

Product Codes

NCZ-1572K
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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

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$1,200.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
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Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

, , ,
$1,200.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound barium zirconate has the formula BaZrO3. An electroceramic, or class of ceramic materials, includes barium zirconate.

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Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

, , ,
$1,200.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

One of the most promising multiferroic materials is bismuth ferrite, an inorganic chemical compound with a perovskite structure and the chemical formula BiFeO3. In order to create a one-phase material called bismuth ferrite (BiFeO3), a bismuth ferrite sputtering target is often manufactured by high temperature sinttering or recrystallizing the mixture of the oxide compound of Bi and Fe. For targets that are sputtering bismuth ferrite, indium bonding is advised.

Titanium Nitride (TiN) Sputtering Targets, indium, Purity: 99.5%, Size: 3'', Thickness: 0.125''
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Titanium Nitride (TiN) Sputtering Targets, indium, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$1,206.00
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Product 

 Titanium Nitride (TiN) Sputtering Targets, indium, Purity: 99.5%, Size: 3'', Thickness: 0.125''

CAS No.

25583-20-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 61.88 g/mol

Melting Point

 ~2950 °C

Boiling Point

~4300 °C

Density

 5.22 g/cm³

Product Codes

NCZ-1597K
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Indium Arsenide (InAs) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

Price range: $1,209.00 through $5,702.00
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Indium Arsenide (InAs) Wafers Size: 3”, Thickness: 625± 25 μm , Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  3” Thickness (μm)
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Silicon on Insulator (SOI) Wafers, Size: 8”, Device Thickness: 600 nm, P type

Price range: $1,210.00 through $5,633.00
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Silicon on Insulator (SOI) Wafers Size: 8”, Device Thickness: 600 nm, P type Technical Properties: Size (inch)  8” Thickness (μm)
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Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size:4”, Thickness: 0.250”

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$1,213.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.
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Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size:4”, Thickness: 0.250”

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$1,213.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound aluminum nitride has the formula AlN.The combination of mechanical, chemical, and physical properties of aluminum nitride is exceptional. Superior aluminum nitride films have found application in a wide range of sensors and devices, including optoelectronic and optical ones. High refractive index (~2.0), low absorption, and a broad band gap (~6.2 eV) are important characteristics for optical and optoelectronic applications.

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Calcium Manganate (CaMnO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

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$1,215.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.250''
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Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

$1,219.00
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Product 

 Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.250''

CAS No.

7440-10-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  140.91 g/mol

Melting Point

931 °C

Boiling Point

 3520 °C

Density

  6.77 g/cm³

Product Codes

NCZ-1784K
Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.250''
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Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

$1,222.00
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Product 

 Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.250''

CAS No.

7439‑92‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  207.2 g/mol

Melting Point

~327.5 °C

Boiling Point

~1,740 °C

Density

  ~11.34 g/cm³

Product Codes

NCZ-2079K
Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.250''
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Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

$1,222.00
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 Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.250''

CAS No.

12031‑18‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  ~245.6 g/mol

Melting Point

Decomposes at ~1300–1500 °C

Boiling Point

N/A

Density

  ~6.5–7.0 g/cm³

Product Codes

NCZ-2118K
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Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

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$1,223.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.125''
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Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

$1,224.00
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Product 

 Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.125''

CAS No.
 12010‑42‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 0.5–2 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~312.82 g/mol

Melting Point

  ~1255 °C (bulk material)

Boiling Point

N/A

Density

 ~8.22 g/cm³

Product Codes

NCZ-2423K
Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''
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Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$1,224.00
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Product 

 Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

CAS No.
 12010‑42‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 0.5–2 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~312.82 g/mol

Melting Point

  ~1255 °C (bulk material)

Boiling Point

N/A

Density

 ~8.22 g/cm³

Product Codes

NCZ-2426K
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Polyhydroxylated Fullerene (Fullerenols)/ C60, (-OH) Functionalized, Dry powder

Price range: $1,225.00 through $5,600.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity, anti-HIV drugs, anti-cancer drugs, chemotherapy drugs, cosmetics additives and scientific research. 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.
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Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

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$1,225.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for invest1,225igation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Stainless Steel Three-Electrode Split Test Cell

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$1,228.00
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Application:

Stainless steel Three-Electrode Split Test Cell for R&D, Hi-Voltage Battery - 15 mm Diameter Cell
Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.125''
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Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.125”

$1,229.00
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Product 

 Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.125''

CAS No.

 12201-04-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 234.80 g/mol

Melting Point

~1,770 °C (estimated; varies by stoichiometry)

Boiling Point

N/A

Density

 ~6.52 g/cm³

Product Codes

NCZ-2080K
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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.125”

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$1,230.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

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$1,230.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
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Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, indium, Purity: 99.9%, Size: 1”, Thickness: 0.125”

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$1,230.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Lanthanum nickel oxide with the chemical formula of LaNiO3 is an important perovskite-type oxide with metallic conductivity. Lanthanum nickel oxide is a ternary compound with unique chemical and physical properties. It shows an extended range of oxygen-deficient compositions, an uncommon intrinsic n-type metallic conductance, a perovskite crystal structure and thermal and chemical stability. These characteristics make LNO a technologically important perovskite oxide electrode in many potential applications such as ferroelectric thin film capacitors, solid oxide fuel cells, nonvolatile ferroelectric random access memories and multilayer actuators. Furthermore, LNO films have potential to be used as oxygen pressure and ethanol active sensing layers. Also, the reduced La–Ni mixed oxides are reported to be good catalyst precursors to synthesized organic compounds and to grow large amounts of regular diameter distribution controlled carbon nanotubes. Different chemical and physical thin film deposition techniques have been used to prepare LNO on various substrates. Chemical methods such as chemical vapor deposition, metallo-organic chemical vapor deposition and chemical solution deposition have been used to prepare LNO films. Physical methods such as sputtering, pulsed laser deposition and mist plasma evaporation have also been reported. Wet chemical solution deposition techniques provide simple and versatile alternative methods for thin film preparation.
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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

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$1,230.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.125”

, ,
$1,230.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Molybdenum Disilicide (MoSi2) Sputtering Targets, indium, Purity: 99.95%, Size: 3'', Thickness: 0.125''
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Molybdenum Disilicide (MoSi2) Sputtering Targets, indium, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$1,230.00
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Product 

 Molybdenum Disilicide (MoSi2) Sputtering Targets, indium, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

12136-78-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 152.11 g/mol

Melting Point

 ~2030 °C

Boiling Point

 ~2300 °C to 2500 °C

Density

 ~6.26 g/cm³

Product Codes

NCZ-1921K
Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.250''
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Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.250”

$1,232.00
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Product 

 Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.250''

CAS No.

12031‑18‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  ~245.6 g/mol

Melting Point

Decomposes at ~1300–1500 °C

Boiling Point

N/A

Density

 ~6.3–7.0 g/cm³ (≥90% theoretical)

Product Codes

NCZ-2114K
Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''
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Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,234.00
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Product 

 Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

12626-81-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~303.1 g/mol

Melting Point

 ~1,250°C – 1,350°C

Boiling Point

N/A

Density

  ~7.75–8.0 g/cm³

Product Codes

NCZ-2066K
Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 3'', Thickness: 0.125''
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Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$1,244.00
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Product 

 Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 3'', Thickness: 0.125''

CAS No.

 409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  40.10 g/mol

Melting Point

~2,700 °C

Boiling Point

N/A

Density

 ~3.21 g/cm³

Product Codes

NCZ-1721K
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Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

, ,
$1,245.00
Add to cart

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Lanthanum nickel oxide with the chemical formula of LaNiO3 is an important perovskite-type oxide with metallic conductivity. Lanthanum nickel oxide is a ternary compound with unique chemical and physical properties. It shows an extended range of oxygen-deficient compositions, an uncommon intrinsic n-type metallic conductance, a perovskite crystal structure and thermal and chemical stability. These characteristics make LNO a technologically important perovskite oxide electrode in many potential applications such as ferroelectric thin film capacitors, solid oxide fuel cells, nonvolatile ferroelectric random access memories and multilayer actuators. Furthermore, LNO films have potential to be used as oxygen pressure and ethanol active sensing layers. Also, the reduced La–Ni mixed oxides are reported to be good catalyst precursors to synthesized organic compounds and to grow large amounts of regular diameter distribution controlled carbon nanotubes. Different chemical and physical thin film deposition techniques have been used to prepare LNO on various substrates. Chemical methods such as chemical vapor deposition, metallo-organic chemical vapor deposition and chemical solution deposition have been used to prepare LNO films. Physical methods such as sputtering, pulsed laser deposition and mist plasma evaporation have also been reported. Wet chemical solution deposition techniques provide simple and versatile alternative methods for thin film preparation.