Sort by
Filter by price
Filter
Show 9 12 18 24
Add to compare
Quick view
Add to wishlist

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

, ,
$1,040.00
Add to cart

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
Add to compare
Quick view
Add to wishlist

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

, , ,
$1,040.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Silicon on Insulator (SOI) Wafers, Size: 6”, Device Thickness: 340 nm, P type

, ,
Price range: $1,042.00 through $4,935.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/945 € 5 pieces/4475 €                          Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 6'', Device Thickness: 340 nm, P type

Technical Properties:

Size (inch)  6”
Thickness (μm)  625
Resistivity   1-20 ohm.cm
Grade  Prime
Dopant  P type (Boron doped )
Orientation  100
Device Thickness  340 nm
Device Resistivity   1-20 ohm.cm
Device Type  P type (Boron doped )
Device Orientation  100
BOX Thickness  2 um

Fields of Application for Silicon on Insulator (SOI) Wafer

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.
  • Silicon on insulator (SOI) wafer is used in silicon photonics.
  • Silicon on insulator (SOI) wafer is used in microelectronic devices.
  • Silicon on insulator (SOI) wafer is used for radio frequency (RF).
Add to compare
Quick view
Add to wishlist

Titanium Nitride (TiN) Sputtering Targets, indium, Purity: 99.5%, Size: 3”, Thickness: 0.125”

, , ,
$1,044.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

$1,048.00
Add to cart

Product 

 Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.250''

CAS No.

13538-87-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 240.83 g/mol

Melting Point

 ~2300 °C

Boiling Point

N/A

Density

 ~6.3 – 6.8 g/cm³

Product Codes

NCZ-2134K
Add to compare
Quick view
Add to wishlist

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

, , ,
$1,050.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

One of the most promising multiferroic materials is bismuth ferrite, an inorganic chemical compound with a perovskite structure and the chemical formula BiFeO3. In order to create a one-phase material called bismuth ferrite (BiFeO3), a bismuth ferrite sputtering target is often manufactured by high temperature sinttering or recrystallizing the mixture of the oxide compound of Bi and Fe. For targets that are sputtering bismuth ferrite, indium bonding is advised.

Add to compare
Quick view
Add to wishlist

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

, , ,
$1,050.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

One of the most promising multiferroic materials is bismuth ferrite, an inorganic chemical compound with a perovskite structure and the chemical formula BiFeO3. In order to create a one-phase material called bismuth ferrite (BiFeO3), a bismuth ferrite sputtering target is often manufactured by high temperature sinttering or recrystallizing the mixture of the oxide compound of Bi and Fe. For targets that are sputtering bismuth ferrite, indium bonding is advised.

Strontium Titanate (SrTiO3) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Strontium Titanate (SrTiO3) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$1,052.00
Add to cart

Product 

 Strontium Titanate (SrTiO3) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 183.49 g/mol

Melting Point

 ~2080 °C

Boiling Point

N/A

Density

 ~5.12 g/cm³

Product Codes

NCZ-1668K
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Silicon on Insulator (SOI) Wafers, Size: 8”, Device Thickness: 300 nm, P type

, ,
Price range: $1,054.00 through $4,918.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/956 € 5 pieces/4460 €                           Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 8'', Device Thickness: 300 nm, P type

Technical Properties:

Size (inch)  8”
Thickness (μm)  725
Resistivity   1-100 ohm.cm
Grade  Prime
Dopant  P type (Boron doped )
Orientation  100
Device Thickness  300 nm
Device Resistivity   1-100 ohm.cm
Device Type  P type (Boron doped )
Device Orientation  100
BOX Thickness  500 nm

Fields of Application for Silicon on Insulator (SOI) Wafer

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.
  • Silicon on insulator (SOI) wafer is used in silicon photonics.
  • Silicon on insulator (SOI) wafer is used in microelectronic devices.
  • Silicon on insulator (SOI) wafer is used for radio frequency (RF).
Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$1,056.00
Add to cart

Product 

 Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.
12009‑21‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 276.55 g/mol

Melting Point

 N/A

Boiling Point

N/A

Density

 ~5.52 g/cm³ (theoretical)

Product Codes

NCZ-2444K
Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.95%, Size: 4'', Thickness: 0.125'' , Grey to Black
Add to compare
Quick view
Add to wishlist

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.95%, Size: 4”, Thickness: 0.125” , Grey to Black

$1,057.00
Add to cart

Product 

 Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.95%, Size: 4'', Thickness: 0.125'' , Grey to Black

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

 ~4.23 g/cm³

Product Codes

NCZ-1421K
Add to compare
Quick view
Add to wishlist

Silicon on Insulator (SOI) Wafers, Size: 8”, Device Thickness: 600 nm, P type

, ,
Price range: $1,058.00 through $4,929.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/960 € 5 pieces/4470 €                          Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 8'', Device Thickness: 600 nm, P type

Technical Properties:

Size (inch)  8”
Thickness (μm)  725
Resistivity   1-100 ohm.cm
Grade  Prime
Dopant  P type (Boron doped )
Orientation  100
Device Thickness  600 nm
Device Resistivity   1-100 ohm.cm
Device Type  P type (Boron doped )
Device Orientation  100
BOX Thickness  2000 nm

Fields of Application for Silicon on Insulator (SOI) Wafer

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.
  • Silicon on insulator (SOI) wafer is used in silicon photonics.
  • Silicon on insulator (SOI) wafer is used in microelectronic devices.
  • Silicon on insulator (SOI) wafer is used for radio frequency (RF).
Add to compare
Quick view
Add to wishlist

Lithium Cobalt Oxide (LiCoO2) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

, ,
$1,058.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Formula LiCoO2 represents the chemical compound lithium cobalt oxide. A crystalline solid that is dark blue or bluish-gray in color, lithium cobalt oxide is frequently utilized in the positive electrodes of lithium-ion batteries.

Add to compare
Quick view
Add to wishlist

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250

, ,
$1,060.00
Add to cart

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$1,060.00
Add to cart

Product 

 Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.125''

CAS No.

1317‑61‑9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  231.6 g/mol

Melting Point

~1,597 °C

Boiling Point

 ~2,623 °C (material may decompose before boiling)

Density

  ~5.17 g/cm³ (sintered target)

Product Codes

NCZ-2167K
Hot
Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 4'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,061.00
Add to cart

Product 

 Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

1314‑62‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 181.88 g/mol

Melting Point

690 °C

Boiling Point

~1750 °C

Density

 ~3.35 g/cm³

Product Codes

NCZ-1531K
Add to compare
Quick view
Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 3”, Thickness: 0.125”

, , ,
$1,063.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Add to compare
Quick view
Add to wishlist

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

, ,
$1,067.00
Add to cart

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
Add to compare
Quick view
Add to wishlist

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

, , ,
$1,067.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Add to compare
Quick view
Add to wishlist

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

, ,
$1,068.00
Add to cart

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Lanthanum nickel oxide with the chemical formula of LaNiO3 is an important perovskite-type oxide with metallic conductivity. Lanthanum nickel oxide is a ternary compound with unique chemical and physical properties. It shows an extended range of oxygen-deficient compositions, an uncommon intrinsic n-type metallic conductance, a perovskite crystal structure and thermal and chemical stability. These characteristics make LNO a technologically important perovskite oxide electrode in many potential applications such as ferroelectric thin film capacitors, solid oxide fuel cells, nonvolatile ferroelectric random access memories and multilayer actuators. Furthermore, LNO films have potential to be used as oxygen pressure and ethanol active sensing layers. Also, the reduced La–Ni mixed oxides are reported to be good catalyst precursors to synthesized organic compounds and to grow large amounts of regular diameter distribution controlled carbon nanotubes. Different chemical and physical thin film deposition techniques have been used to prepare LNO on various substrates. Chemical methods such as chemical vapor deposition, metallo-organic chemical vapor deposition and chemical solution deposition have been used to prepare LNO films. Physical methods such as sputtering, pulsed laser deposition and mist plasma evaporation have also been reported. Wet chemical solution deposition techniques provide simple and versatile alternative methods for thin film preparation.
Add to compare
Quick view
Add to wishlist

Nickel Oxide (NiO) Sputtering Targets, indium, Purity: 99.98%, Size: 2”, Thickness: 0.125”

, , ,
$1,068.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.250”

$1,068.00
Add to cart

Product 

 Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.250''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

  ~3.58 g/cm³

Product Codes

NCZ-1971K
Add to compare
Quick view
Add to wishlist

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.250”

, ,
$1,069.00
Add to cart

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Lanthanum nickel oxide with the chemical formula of LaNiO3 is an important perovskite-type oxide with metallic conductivity. Lanthanum nickel oxide is a ternary compound with unique chemical and physical properties. It shows an extended range of oxygen-deficient compositions, an uncommon intrinsic n-type metallic conductance, a perovskite crystal structure and thermal and chemical stability. These characteristics make LNO a technologically important perovskite oxide electrode in many potential applications such as ferroelectric thin film capacitors, solid oxide fuel cells, nonvolatile ferroelectric random access memories and multilayer actuators. Furthermore, LNO films have potential to be used as oxygen pressure and ethanol active sensing layers. Also, the reduced La–Ni mixed oxides are reported to be good catalyst precursors to synthesized organic compounds and to grow large amounts of regular diameter distribution controlled carbon nanotubes. Different chemical and physical thin film deposition techniques have been used to prepare LNO on various substrates. Chemical methods such as chemical vapor deposition, metallo-organic chemical vapor deposition and chemical solution deposition have been used to prepare LNO films. Physical methods such as sputtering, pulsed laser deposition and mist plasma evaporation have also been reported. Wet chemical solution deposition techniques provide simple and versatile alternative methods for thin film preparation.
Add to compare
Quick view
Add to wishlist

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

, ,
$1,070.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

An inorganic substance is lead zirconium titanate. This ceramic perovskite material has a strong piezoelectric effect, which means that when an electric field is applied, the compound changes shape. Lead zirconium titanate is employed in a number of practical applications such as ultrasonic transducers and piezoelectric resonators.

Add to compare
Quick view
Add to wishlist

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

, , ,
$1,073.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Formulated as BaTiO3, barium titanate is an inorganic substance. When formed as big crystals, barium titanate is clear and has a white powdery appearance. It is a ferroelectric ceramic material with piezoelectric and photorefractive characteristics. Titanate of barium sputtering Agents have various applications. For instance, barium titanate films, which are produced by sputtering targets, can be employed in particular electronic ceramics. Barium titanate can be utilized in the building of electrical devices such as sensors, capacitors, and detectors.

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$1,073.00
Add to cart

Product 

 Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

12626-81-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~303.1 g/mol

Melting Point

 ~1,250°C – 1,350°C

Boiling Point

N/A

Density

  ~7.75–8.0 g/cm³

Product Codes

NCZ-2068K
Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$1,076.00
Add to cart

Product 

 Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.125''

CAS No.

25583-20-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 61.88 g/mol

Melting Point

 ~2950 °C

Boiling Point

~4300 °C

Density

 5.22 g/cm³

Product Codes

NCZ-1601K
Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$1,076.00
Add to cart

Product 

 Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.
 12010‑42‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 0.5–2 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~312.82 g/mol

Melting Point

  ~1255 °C (bulk material)

Boiling Point

N/A

Density

 ~8.22 g/cm³

Product Codes

NCZ-2428K
Add to compare
Quick view
Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 4”, Thickness: 0.125”

, , ,
$1,078.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Add to compare
Quick view
Add to wishlist

Zinc Sulfide (ZnS) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

, , ,
$1,078.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Hot
Zinc Oxide (ZnO) Sputtering Targets, indium, Purity: 99.9%, Size: 3'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Zinc Oxide (ZnO) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,079.00
Add to cart

Product 

 Zinc Oxide (ZnO) Sputtering Targets, indium, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 (ZnO) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 81.38 g/mol

Melting Point

1975 °C

Boiling Point

N/A

Density

 5.61 g/cm³

Product Codes

NCZ-1494K
Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.9%, Size: 3'', Thickness: 0.125'', Grey to Black
Add to compare
Quick view
Add to wishlist

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”, Grey to Black

$1,080.00
Add to cart

Product 

 Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.9%, Size: 3'', Thickness: 0.125'', Grey to Black

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

 ~4.23 g/cm³

Product Codes

NCZ-1423K
Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 7'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 7”, Thickness: 0.250”

$1,080.00
Add to cart

Product 

 Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 7'', Thickness: 0.250''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

  ~3.58 g/cm³

Product Codes

NCZ-1963K
Add to compare
Quick view
Add to wishlist

Molybdenum Disilicide (MoSi2) Sputtering Targets, indium, Purity: 99.95%, Size: 3”, Thickness: 0.125”

,
$1,082.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Add to compare
Quick view
Add to wishlist

Nickel Oxide (NiO) Sputtering Targets, indium, Purity: 99.95%, Size: 2”, Thickness: 0.125”

, , ,
$1,082.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$1,088.00
Add to cart

Product 

 Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.250''

CAS No.

1317‑61‑9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  231.6 g/mol

Melting Point

~1,597 °C

Boiling Point

 ~2,623 °C (material may decompose before boiling)

Density

  ~5.17 g/cm³ (sintered target)

Product Codes

NCZ-2166K
10 mL Gold (Au) Nanowire Dispersion
Add to compare
Quick view
Add to wishlist

10 mL Gold (Au) Nanowire Dispersion

$1,089.00
Add to cart
Product 10 mL Gold (Au) Nanowire Dispersion
CAS No. 7440-57-5
Appearance Pale yellow, light red, or brownish tint
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Au
Molecular Weight 196.97 g/mol
Melting Point 1064 °C
Boiling Point 2970 °C
Density N/A
Product Codes NCZ-115I
 
Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 4'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$1,089.00
Add to cart

Product 

 Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 4'', Thickness: 0.125''

CAS No.
12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  ≈ 55.26 g/mol

Melting Point

 ~2350 °C

Boiling Point

 > 3500 °C (decomposes and volatilizes quickly above ~2800 °C)

Density

 approximately ~2.5 g/cm³ for typical solid form

Product Codes

NCZ-2376K
Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$1,091.00
Add to cart

Product 

 Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.
 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 101.96 g/mol

Melting Point

 ~2,072 °C

Boiling Point

~2,977 °C

Density

 ~3.97–3.98 g/cm³

Product Codes

NCZ-2536K
Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.125”

$1,095.00
Add to cart

Product 

 Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.125''

CAS No.

 12201-04-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 234.80 g/mol

Melting Point

~1,770 °C (ceramic decomposes)

Boiling Point

N/A

Density

  ~6.5–6.6 g/cm³

Product Codes

NCZ-2082K
Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$1,095.00
Add to cart

Product 

 Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.
12068-69-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 626.32 g/mol

Melting Point

 620 °C

Boiling Point

N/A

Density

  6.50 g/cm³

Product Codes

NCZ-2497K
Lithium Cobalt Oxide (LiCoO2) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Lithium Cobalt Oxide (LiCoO2) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$1,096.00
Add to cart

Product 

 Lithium Cobalt Oxide (LiCoO2) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''

CAS No.

12190‑79‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 97.87 g/mol

Melting Point

~1,130 °C

Boiling Point

N/A

Density

 ~4.80–4.95 g/cm³

Product Codes

NCZ-2048K
Add to compare
Quick view
Add to wishlist

Polyhydroxylated Fullerene (Fullerenols)/ C60, (-OH) Functionalized, Dry powder

,
Price range: $1,097.00 through $5,016.00
Select options This product has multiple variants. The options may be chosen on the product page
1 gram/980 € 5 grams/4480 €                         
Please contact us for quotes on larger quantities !!! 

Polyhydroxylated Fullerene (Fullerenols)/ C60

(-OH) Functionalized, Dry powder

Technical Properties:

Water Soluble can reach >50 mg/mL
Dimethyl Sulfoxide (DMSO) Slightly soluble
Methanol Slightly soluble
Storage Temperature 2-8°C
Color Dark Brown
Form Powder
The starting material is >98% purity C60 fullerenes. C60 bearing over 40 hydroxyl groups that have higher water solubility (>50 mg/mL). These exist as monodisperse nanoparticles in water, and have a valiant polishing effect. They exhibit superior antioxidant and anti-inflammatory properties.

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity, anti-HIV drugs, anti-cancer drugs, chemotherapy drugs, cosmetics additives and scientific research. 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.  
Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$1,097.00
Add to cart

Product 

 Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1–5 μm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 237.66 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

 ~6.4–6.8 g/cm³

Product Codes

NCZ-1781K
Add to compare
Quick view
Add to wishlist

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

, , ,
$1,101.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$1,101.00
Add to cart

Product 

 Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.
12009‑21‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 276.55 g/mol

Melting Point

 N/A

Boiling Point

N/A

Density

 ~5.52 g/cm³ (theoretical)

Product Codes

NCZ-2443K
Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$1,101.00
Add to cart

Product 

 Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''

CAS No.
 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 101.96 g/mol

Melting Point

 ~2,072 °C

Boiling Point

~2,977 °C

Density

 ~3.97–3.98 g/cm³

Product Codes

NCZ-2531K
Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$1,101.00
Add to cart

Product 

 Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.125''

CAS No.
 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 101.96 g/mol

Melting Point

 ~2,072 °C

Boiling Point

~2,977 °C

Density

 ~3.97–3.98 g/cm³

Product Codes

NCZ-2533K
Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 3'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$1,102.00
Add to cart

Product 

 Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.
Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 90% In₂O₃ (277.64 g/mol), 10% ZnO (81.38 g/mol) → ~260–270 g/mol (estimated)

Melting Point

 Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

 ~7.1 g/cm³

Product Codes

NCZ-2193K
Lithium Phosphate (Li3PO4) Sputtering Targets, elastomer, Purity: 99.95%, Size: 3'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Lithium Phosphate (Li3PO4) Sputtering Targets, elastomer, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$1,104.00
Add to cart

Product 

 Lithium Phosphate (Li3PO4) Sputtering Targets, elastomer, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

N/A

Density

  ~2.53 g/cm³

Product Codes

NCZ-2017K
Barium Titanate (BaTiO3) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Barium Titanate (BaTiO3) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$1,105.00
Add to cart

Product 

 Barium Titanate (BaTiO3) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.
 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~233.19 g/mol

Melting Point

 ~1625 °C

Boiling Point

N/A

Density

  ~6.02 g/cm³

Product Codes

NCZ-2450K
Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$1,106.00
Add to cart

Product 

 Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.125''

CAS No.

13538-87-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 240.83 g/mol

Melting Point

 ~2300 °C

Boiling Point

N/A

Density

 ~6.3 – 6.8 g/cm³

Product Codes

NCZ-2133K
Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$1,106.00
Add to cart

Product 

 Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.
 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 101.96 g/mol

Melting Point

 ~2,072 °C

Boiling Point

~2,977 °C

Density

 ~3.97–3.98 g/cm³

Product Codes

NCZ-2534K
Add to compare
Quick view
Add to wishlist

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

, , ,
$1,107.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Ferrite (BiFeO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Bismuth Ferrite (BiFeO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$1,108.00
Add to cart

Product 

 Bismuth Ferrite (BiFeO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.
 12022-74-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  240.76 g/mol

Melting Point

  ~930 °C

Boiling Point

N/A

Density

  ~8.3–8.5 g/cm³

Product Codes

NCZ-2414K
Magnesium Oxide (MgO) Sputtering Targets, elastomer, Purity: 99.95%, Size: 2'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Magnesium Oxide (MgO) Sputtering Targets, elastomer, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$1,109.00
Add to cart

Product 

 Magnesium Oxide (MgO) Sputtering Targets, elastomer, Purity: 99.95%, Size: 2'', Thickness: 0.125''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

  ~3.58 g/cm³

Product Codes

NCZ-1958K
Add to compare
Quick view
Add to wishlist

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.125”

,
$1,110.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

$1,111.00
Add to cart

Product 

 Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.250''

CAS No.

25583-20-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 61.88 g/mol

Melting Point

 ~2950 °C

Boiling Point

~4300 °C

Density

 5.22 g/cm³

Product Codes

NCZ-1600K
Add to compare
Quick view
Add to wishlist

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

, ,
$1,115.00
Add to cart

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Lanthanum nickel oxide with the chemical formula of LaNiO3 is an important perovskite-type oxide with metallic conductivity. Lanthanum nickel oxide is a ternary compound with unique chemical and physical properties. It shows an extended range of oxygen-deficient compositions, an uncommon intrinsic n-type metallic conductance, a perovskite crystal structure and thermal and chemical stability. These characteristics make LNO a technologically important perovskite oxide electrode in many potential applications such as ferroelectric thin film capacitors, solid oxide fuel cells, nonvolatile ferroelectric random access memories and multilayer actuators. Furthermore, LNO films have potential to be used as oxygen pressure and ethanol active sensing layers. Also, the reduced La–Ni mixed oxides are reported to be good catalyst precursors to synthesized organic compounds and to grow large amounts of regular diameter distribution controlled carbon nanotubes. Different chemical and physical thin film deposition techniques have been used to prepare LNO on various substrates. Chemical methods such as chemical vapor deposition, metallo-organic chemical vapor deposition and chemical solution deposition have been used to prepare LNO films. Physical methods such as sputtering, pulsed laser deposition and mist plasma evaporation have also been reported. Wet chemical solution deposition techniques provide simple and versatile alternative methods for thin film preparation.
Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.125”

$1,115.00
Add to cart

Product 

 Lanthanum Nickel Oxide (LaNiO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.125''

CAS No.

12031‑18‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~1–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  ~245.6 g/mol

Melting Point

Decomposes at ~1300–1500 °C

Boiling Point

N/A

Density

  ~6.5–7.0 g/cm³

Product Codes

NCZ-2115K