Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 6'', Thickness: 0.250''

$621.00

Product	Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 6'', Thickness: 0.250''
CAS No.	7440-33-7
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	183.84 g/mol
Melting Point	3422 °C
Boiling Point	5555 °C
Density	19.25 g/cm³
Product Codes	NCZ-1587K

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Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$540.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.125''

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Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

Sputtering Targets

$651.00

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Product	Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.125''
CAS No.	7440-33-7
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	183.84 g/mol
Melting Point	3422 °C
Boiling Point	5555 °C
Density	19.25 g/cm³
Product Codes	NCZ-1585K

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Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

TUNGSTEN SPUTTERING TARGETS, 8, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$566.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.250''

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Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

Sputtering Targets

$663.00

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Product	Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.250''
CAS No.	7440-33-7
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	183.84 g/mol
Melting Point	3422 °C
Boiling Point	5555 °C
Density	19.25 g/cm³
Product Codes	NCZ-1586K

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Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

TUNGSTEN SPUTTERING TARGETS, 8, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$576.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Tungsten Carbide (WC) Nanopowder/Nanoparticles, Purity: 99.96%, Size: 25-95 nm

Nanoparticles, Compounds nanoparticles, Tungsten carbide (wc) Nanoparticles

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5 grams/94 €

25 grams/182 € 100 grams/536 €

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Tungsten Carbide (WC) Nanopowder/Nanoparticles

Purity: 99.96%, Size: 25-95 nm

Storage Condition:

Tungsten carbide nanoparticles should be sealed in vacuum and stored in cool and dry room. It should not be exposure to air and avoid stress.

Applications:

Tungsten carbide nanoparticles is a hard material, corrosion resistant, and waer resistant material. It is used in cutting tools, mining tolls, and chipless forming tools. It is also used in coatings such as corrosion-resistant coatings, wear-resistance coatings, and erosion-resistant coatings. In order to enhance hardness, strength, and wear resistance tungsten carbide nanoparticles is used in nano-compsites. It is used in producing super fine horniness alloy and high capability nano-crystalline. It is also used as in catalysis as petrochemical cracking catalyst.

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Tungsten Carbide (WC) Nanopowder/Nanoparticles, Purity: 99.99%, Size: 55 nm

Nanoparticles, Compounds nanoparticles, Tungsten carbide (wc) Nanoparticles

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5 grams/26 € 25 grams/47 € 100 grams/128 € 500 grams/296 € 1000 grams/485 €

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Tungsten Carbide (WC) Nanopowder/Nanoparticles

Purity: 99.99%, Size: 55 nm

Storage Condition:

Tungsten carbide nanoparticles should be sealed in vacuum and stored in cool and dry room. It should not be exposure to air and avoid stress.

Applications:

Tungsten carbide nanoparticles is a hard material, corrosion resistant, and waer resistant material. It is used in cutting tools, mining tolls, and chipless forming tools. It is also used in coatings such as corrosion-resistant coatings, wear-resistance coatings, and erosion-resistant coatings. In order to enhance hardness, strength, and wear resistance tungsten carbide nanoparticles is used in nano-compsites. It is used in producing super fine horniness alloy and high capability nano-crystalline. It is also used as in catalysis as petrochemical cracking catalyst.

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Tungsten Carbide (WC) Sputtering Target

SPUTTERING TARGETS NAMES T - Z, Deposition Materials

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Product	Tungsten Carbide (WC) Sputtering Target
CAS No.	12070-12-1
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	NA (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	195.85 g/mol
Melting Point	~2,870 °C
Boiling Point	~6,000 °C
Density	~15.6 g/cm³
Product Codes	NCZ-1337K

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Tungsten Carbide Cobalt (WC/Co) Nanopowder/Nanoparticles, Purity: 99.99%, Size: 35-75 nm

Nanoparticles, Compounds nanoparticles, Tungsten carbide Cobalt (Wc/CO) Nanoparticles

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5 grams/37 €

25 grams/73 € 100 grams/112 €

500 grams/264 € 1000 grams/468 €

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Tungsten Carbide Cobalt (WC/Co) Nanopowder/Nanoparticles

Purity: 99.99%, Size: 35-75 nm

Applications:

Tungsten carbide cobalt nanoparticles is a hard material, corrosion resistant, and waer resistant material. It is used in cutting tools, mining tolls, and chipless forming tools. It is also used in coatings such as corrosion-resistant coatings, wear-resistance coatings, and erosion-resistant coatings. In order to enhance hardness, strength, and wear resistance tungsten carbide cobalt nanoparticles is used in nano-compsites.

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Tungsten Carbide Cobalt Nanoparticles

Nanoparticles & Nanopowders

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Tungsten Carbide Cobalt Nanoparticles

Tungsten Carbide Cobalt Nanopowder

Nano Tungsten Carbide Cobalt

MF:	WC : Co
Chemical Name:	Tungsten Carbide Cobalt
Purity:	> 99.99%
APS:	80 nm (Size Customization possible)
Form:	Nano powder
Product Number:	#NCZ5801
CAS Number	12070-12-1

Note: We supply different products of microparticles and Nanoparticles powder in all size range according to client’s requirements.

Tungsten Carbide Nanoparticles/ Nanopowder ( WC, 80nm)

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Tungsten Carbide Nanoparticles/ Nanopowder ( WC, 80nm)

Nanoparticles & Nanopowders, Oxides and Compounds

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$115/25g

$305/100g

$715/500g

Product	Tungsten Carbide Nanoparticles/ Nanopowder ( WC, 80nm)
CAS No.	12070-12-1
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	80nm (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	195.85 g/mol
Melting Point	~2,870 °C
Boiling Point	~6,000 °C
Density	~15.63 g/cm³
Product Codes	NCZ-1205K

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Tungsten Disulfide (WS2) Nanopowder/Nanoparticles, Purity: 99.99+%, Size: 35-75 nm

Nanoparticles, Compounds nanoparticles, Tungsten Disulfide (WSZ) Nanoparticles

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5 grams/44 € 25 grams/122 € 100 grams/311 €

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Tungsten Disulfide (WS2) Nanopowder/Nanoparticles

Purity: 99.99+%, Size: 35-75 nm

Applications:

Tungsten disulfide nanoparticles is used in oil catalysts, and as a catalyst in hydrodesulfurization processes. It is used in semiconductors and in fuel cells. Tungsten disulfide nanoparticles has very good preformance as solid lubricant material. It is used as solid lubricant, and dry film lubricant. It is used in self lubricating composite materials. It is most effective in haigh pressure, high load, high vacuum, high temperature, and corrosive environments.

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Tungsten Disulfide (WS2) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

TUNGSTEN DISULFIDE SPUTTERING TARGETS, 2, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$546.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Disulfide (WS2) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''

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Tungsten Disulfide (WS2) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

Sputtering Targets

$628.00

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Product	Tungsten Disulfide (WS2) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''
CAS No.	12138-09-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	247.97 g/mol
Melting Point	~1,250 °C
Boiling Point	N/A
Density	~7.5 g/cm³
Product Codes	NCZ-1575K

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

Sputtering Targets

$449.00

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Product	Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''
CAS No.	12138-09-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	247.97 g/mol
Melting Point	~1,250 °C
Boiling Point	N/A
Density	~7.5 g/cm³
Product Codes	NCZ-1582K

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

TUNGSTEN DISULFIDE SPUTTERING TARGETS, 3, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$392.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

Sputtering Targets

$582.00

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Product	Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''
CAS No.	12138-09-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	247.97 g/mol
Melting Point	~1,250 °C
Boiling Point	N/A
Density	~7.5 g/cm³
Product Codes	NCZ-1581K

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

TUNGSTEN DISULFIDE SPUTTERING TARGETS, 2, 3, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$506.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

Sputtering Targets

$647.00

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Product	Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''
CAS No.	12138-09-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	247.97 g/mol
Melting Point	~1,250 °C
Boiling Point	N/A
Density	~7.5 g/cm³
Product Codes	NCZ-1580K

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

TUNGSTEN DISULFIDE SPUTTERING TARGETS, 4, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$562.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

Sputtering Targets

$628.00

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Product	Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''
CAS No.	12138-09-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	247.97 g/mol
Melting Point	~1,250 °C
Boiling Point	N/A
Density	~7.5 g/cm³
Product Codes	NCZ-1579K

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

TUNGSTEN DISULFIDE SPUTTERING TARGETS, 4, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$546.00

Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.125''

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

Sputtering Targets

$484.00

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Product	Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.125''
CAS No.	12138-09-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	247.97 g/mol
Melting Point	~1,250 °C
Boiling Point	N/A
Density	~7.5 g/cm³
Product Codes	NCZ-1578K

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

TUNGSTEN DISULFIDE SPUTTERING TARGETS, 5, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$422.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

TUNGSTEN DISULFIDE SPUTTERING TARGETS, 5, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$507.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.250''

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

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Product	Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.250''
CAS No.	12138-09-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	247.97 g/mol
Melting Point	~1,250 °C
Boiling Point	N/A
Density	~7.5 g/cm³
Product Codes	NCZ-1577K

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

TUNGSTEN DISULFIDE SPUTTERING TARGETS, 6, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$586.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.250''

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

Sputtering Targets

$674.00

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Product	Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.250''
CAS No.	12138-09-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	247.97 g/mol
Melting Point	~1,250 °C
Boiling Point	N/A
Density	~7.5 g/cm³
Product Codes	NCZ-1576K

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

TUNGSTEN DISULFIDE SPUTTERING TARGETS, 8, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$436.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.250''

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Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

Sputtering Targets

$500.00

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Product	Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.250''
CAS No.	12138-09-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	247.97 g/mol
Melting Point	~1,250 °C
Boiling Point	N/A
Density	~7.5 g/cm³
Product Codes	NCZ-1576K

Tungsten Disulfide Nanopowder/ Nanoparticles ( WS2, 99.9%,

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Tungsten Disulfide Nanopowder/ Nanoparticles ( WS2, 99.9%, <100nm)

Nanoparticles & Nanopowders, Oxides and Compounds

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$195/25g

$475/100g

$1045/500g

Product	Tungsten Disulfide Nanopowder/ Nanoparticles ( WS2, 99.9%, <100nm)
CAS No.	12138-09-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	<100nm (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	247.97 g/mol
Melting Point	~1,250 °C
Boiling Point	~2,295 °C
Density	~7.5 g/cm³
Product Codes	NCZ-1204K

Tungsten Disulfide Nanopowder/ Nanoparticles ( WS2, 99.9%, 0.8um)

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Tungsten Disulfide Nanopowder/ Nanoparticles ( WS2, 99.9%, 0.8um)

Nanoparticles & Nanopowders, Oxides and Compounds

$91.00

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$91/100g

Product	Tungsten Disulfide Nanopowder/ Nanoparticles ( WS2, 99.9%, 0.8um)
CAS No.	12138-09-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	0.8um (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	247.97 g/mol
Melting Point	~1,250 °C
Boiling Point	~2,295 °C
Density	~7.5 g/cm³
Product Codes	NCZ-1203K

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Tungsten nanoparticles

Nanoparticles & Nanopowders

$0.00

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Tungsten nanopowder

Tungsten nanoparticles

MF:	W
Chemical Name:	Tungsten
Purity:	> 99.99%
APS:	25 nm (Size Customization possible)
Form:	Nano powder
Product Number:	#NCZ5701
CAS Number	7440-33-7

Note: We can supply different size products of microparticles and Nanoparticles size range powder according to client’s requirements.

Tungsten Nanoparticles/nanopowder ( W, 99.7% 40-60 nm)

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Tungsten Nanoparticles/nanopowder ( W, 99.7% 40-60 nm)

Nanoparticles & Nanopowders, Metal and Non-metal Elements

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$115/25g

$345/100g

Product	Tungsten Nanoparticles/nanopowder ( W, 99.7% 40-60 nm)
CAS No.	7440-33-7
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	40–60 nm (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	183.84 g/mol
Melting Point	3,422 °C
Boiling Point	5,555 °C
Density	19.3 g/cm³
Product Codes	NCZ-1081K

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Tungsten Oxide (WO3) Nanopowder/Nanoparticles, High Purity: 99.99%, Size: 20-60 nm, Orthorhombic

Tungsten trioxide Nanoparticles, Nanoparticles & Nanopowders

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5 grams/51 €

25 grams/112 € 100 grams/248 €

500 grams/748 € 1000 grams/1223 €

Please contact us for quotes on larger quantities !!!

Tungsten Oxide (WO3) Nanopowder/Nanoparticles

High Purity: 99.99%, Size: 20-60 nm, Orthorhombic

Technical Properties:

Purity (%)	99.99
Morphology	nearly spherical
Average Particle Size (nm)	20.0-60.0
Color	light yellow
Bulk Density (g/cm3)	1,5
True Density (g/cm3)	7,1
Elemental Analysis (%)	Ni	Fe	Cu	Cr	Cu
	0.00005	0.0002	0.0035	0.01	0.0035

Applications: Tungsten oxide nanoparticle is used in gas sensors, humidity sensors, temperature sensors, large area displays, X-ray screens, high density memory devices, infrared switching devices, and optical devices. It is also used as ceramic pigments, and colorant of chinaware. Tungsten oxide nanoparticle is used in fire proofing fabrics and textiles. It is used as catalyst and in wastewater treatment.

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Tungsten Oxide (WO3) Nanopowder/Nanoparticles, Purity: 99.99%, Size: 55 nm, Tetragonal

Nanoparticles & Nanopowders

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5 grams/24 €

25 grams/37 € 100 grams/86 €

500 grams/222 € 1000 grams/387 €

Please contact us for quotes on larger quantities !!!

Tungsten Oxide (WO3) Nanopowder/Nanoparticles

Purity: 99.99%, Size: 55 nm, Tetragonal

Technical Properties:

Purity (%)	99.99
Morphology	nearly spherical
Average Particle Size (nm)	55.0
Melting Point (°C)	1470.0
Bulk Density (g/cm3)	1,5
True Density (g/cm3)	7,1
Elemental Analysis (%)	Ni	Fe	Cu	Cr	Cu
	0.008	0.009	0.012	0.062	0.012

Applications:

Tungsten oxide nanoparticle is used in gas sensors, humidity sensors, temperature sensors, large area displays, X-ray screens, high density memory devices, infrared switching devices, and optical devices. It is also used as ceramic pigments, and colorant of chinaware. Tungsten oxide nanoparticle is used in fire proofing fabrics and textiles. It is used as catalyst and in wastewater treatment.

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Tungsten Oxide (WO3) Sputtering Target

SPUTTERING TARGETS NAMES T - Z, Deposition Materials

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Product	Tungsten Oxide (WO3) Sputtering Target
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	NA (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	~1,473 °C
Boiling Point	~1,700–1,830 °C
Density	~7.16 g/cm³
Product Codes	NCZ-1328K

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Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

TUNGSTEN OXIDE SPUTTERING TARGETS, 2, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$1,308.00

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Applications of Sputtering Targets;

For film deposition, sputtering targets are employed. A sputtering technique called "deposition made by sputter targets" entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Targets are etched using semiconductor sputtering targets. When etching anisotropy is required to a great degree and selectivity is not an issue, sputter etching is the method of choice. By etching away the target material, sputter targets are also utilized for investigation. In one instance, the target sample is sputtered at a steady pace in secondary ion spectroscopy (SIMS). Using mass spectrometry, the concentration and identity of the spewed atoms are determined when the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''

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Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

Sputtering Targets

$1,512.00

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Product	Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	1,473 °C
Boiling Point	1,700–1,850 °C
Density	7.16 g/cm³
Product Codes	NCZ-1566K

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Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

TUNGSTEN OXIDE SPUTTERING TARGETS, 3, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$1,556.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3'', Thickness: 0.125''

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Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

Sputtering Targets

$1,800.00

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Product	Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3'', Thickness: 0.125''
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	1,473 °C
Boiling Point	1,700–1,850 °C
Density	7.16 g/cm³
Product Codes	NCZ-1565K

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Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 4”, Thickness: 0.125”

TUNGSTEN OXIDE SPUTTERING TARGETS, 4, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$2,178.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 4'', Thickness: 0.125''

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Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 4”, Thickness: 0.125”

Sputtering Targets

$2,521.00

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Product	Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 4'', Thickness: 0.125''
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	1,473 °C
Boiling Point	1,700–1,850 °C
Density	7.16 g/cm³
Product Codes	NCZ-1564K

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

TUNGSTEN OXIDE SPUTTERING TARGETS, 1, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$735.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.125''

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

Sputtering Targets

$847.00

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Product	Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.125''
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	1,473 °C
Boiling Point	1,700–1,850 °C
Density	7.16 g/cm³
Product Codes	NCZ-1574K

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

TUNGSTEN OXIDE SPUTTERING TARGETS, 1, Sputtering Targets

$780.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

Sputtering Targets

$899.00

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Product	Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	1,473 °C
Boiling Point	1,700–1,850 °C
Density	7.16 g/cm³
Product Codes	NCZ-1573K

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

TUNGSTEN OXIDE SPUTTERING TARGETS, 2, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$1,038.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

Sputtering Targets

$1,199.00

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Product	Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	1,473 °C
Boiling Point	1,700–1,850 °C
Density	7.16 g/cm³
Product Codes	NCZ-1572K

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

TUNGSTEN OXIDE SPUTTERING TARGETS, 2, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$1,101.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

Sputtering Targets

$1,272.00

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Product	Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	1,473 °C
Boiling Point	1,700–1,850 °C
Density	7.16 g/cm³
Product Codes	NCZ-1571K

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

TUNGSTEN OXIDE SPUTTERING TARGETS, 3, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$1,107.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

Sputtering Targets

$1,279.00

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Product	Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	1,473 °C
Boiling Point	1,700–1,850 °C
Density	7.16 g/cm³
Product Codes	NCZ-1570K

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

TUNGSTEN OXIDE SPUTTERING TARGETS, 3, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$1,176.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

Sputtering Targets

$1,359.00

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Product	Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	1,473 °C
Boiling Point	1,700–1,850 °C
Density	7.16 g/cm³
Product Codes	NCZ-1569K

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

TUNGSTEN OXIDE SPUTTERING TARGETS, 4, Sputtering Targets, SPUTTERING TARGETS NAMES T - Z

$1,717.00

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Applications of Sputtering Targets;

Film deposition is done using puttering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

Sputtering Targets

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Product	Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	1,473 °C
Boiling Point	1,700–1,850 °C
Density	7.16 g/cm³
Product Codes	NCZ-1568K

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Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

TUNGSTEN OXIDE SPUTTERING TARGETS, 4

$1,843.00

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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''

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Add to wishlist

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

Sputtering Targets

$2,133.00

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Product	Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''
CAS No.	1314-35-8
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	231.84 g/mol
Melting Point	1,473 °C
Boiling Point	1,700–1,850 °C
Density	7.16 g/cm³
Product Codes	NCZ-1567K

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Applications of Sputtering Targets;

Applications of Sputtering Targets;

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Applications of Sputtering Targets;

Applications of Sputtering Targets;

Applications of Sputtering Targets;

Applications of Sputtering Targets;

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