Tungsten Oxide Nanoparticles

$0.00

Tungsten Oxide nanoparticles

Tungsten Oxide nanopowder

MF: WO3
Chemical Name: Tungsten Oxide
Purity: > 99.99%
APS: 50 nm (Size Customization possible)
Form: Nanopowder
Product Number: #NCZ5901
CAS Number 1314-35-8
Note: We supply different products of microparticles and Nanoparticles powder in all size range according to client’s requirements.

Tungsten Oxide Nanoparticles/Nanopowder ( WO3, 99.5%, APS <100nm)

Price range: $67.00 through $710.00
Select options This product has multiple variants. The options may be chosen on the product page
$67/25g
$151/100g $411/500g
$710/kg

Product 

Tungsten Oxide Nanoparticles/Nanopowder ( WO3, 99.5%, APS <100nm)

CAS No.

1314-35-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 

<100nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 231.84 g/mol

Melting Point

~1,470 °C

Boiling Point

~1,700–1,735 °C

Density

~7.16 g/cm³

Product Codes

NCZ-1202K

Tungsten Powder

Product Tungsten Powder
CAS No. 7440-33-7
Appearance Dark gray or black fine metallic powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–10 µm (Size Can be customized),  Ask for other available size range.
Ingredient W
Molecular Weight 183.84 g/mol
Melting Point 3422 °C
Boiling Point N/A
Density 19.25 g/cm³
Product Codes NCZ-189M

Tungsten Sputtering Target W

Price range: $232.00 through $714.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Tungsten Sputtering Target W
CAS No. 7440-33-7
Appearance Grayish White, Lustrous, Metallic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient W
Molecular Weight 183.84 g/mol
Melting Point 3410°C
Boiling Point N/A
Density 19.3 g/cm³
Product Codes NCZ-145H
 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$102.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$113.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.125''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 170.5 g/mol

Melting Point

 2,800 °C

Boiling Point

 ~4,800 °C

Density

16.7 g/cm³

Product Codes

NCZ-1563K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$99.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$109.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 170.5 g/mol

Melting Point

 2,800 °C

Boiling Point

 ~4,800 °C

Density

16.7 g/cm³

Product Codes

NCZ-1562K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$303.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 170.5 g/mol

Melting Point

2,700 – 3,200 °C

Boiling Point

4,000 – 5,000 °C

Density

16.7 g/cm³

Product Codes

NCZ-1560K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$265.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$367.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

58397-70-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~231.71 g/mol

Melting Point

~2,700–3,200 °C

Boiling Point

~4,500–5,000 °C

Density

~14.5–17.0 g/cm³

Product Codes

NCZ-1559K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$320.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$681.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

58397-70-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~231.71 g/mol

Melting Point

~2,700–3,200 °C

Boiling Point

~4,500–5,000 °C

Density

~14.5–17.0 g/cm³

Product Codes

NCZ-1558K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$590.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$745.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

58397-70-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~231.71 g/mol

Melting Point

~2,700–3,200 °C

Boiling Point

~4,500–5,000 °C

Density

~14.5–17.0 g/cm³

Product Codes

NCZ-1557K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$645.00

Applications of Sputtering Targets;

For film deposition, sputtering targets are employed. A sputtering technique called "deposition made by sputter targets" entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Targets are etched using semiconductor sputtering targets. When etching anisotropy is required to a great degree and selectivity is not an issue, sputter etching is the method of choice. By etching away the target material, sputter targets are also utilized for investigation. In one instance, the target sample is sputtered at a steady pace in secondary ion spectroscopy (SIMS). Using mass spectrometry, the concentration and identity of the spewed atoms are determined when the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$721.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

58397-70-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~231.71 g/mol

Melting Point

~2,700–3,200 °C

Boiling Point

~4,500–5,000 °C

Density

~14.5–17.0 g/cm³

Product Codes

NCZ-1556K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$624.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$410.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

58397-70-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~231.71 g/mol

Melting Point

~2,700–3,200 °C

Boiling Point

~4,500–5,000 °C

Density

~14.5–17.0 g/cm³

Product Codes

NCZ-1555K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$357.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$441.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.125''

CAS No.

58397-70-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~231.71 g/mol

Melting Point

~2,700–3,200 °C

Boiling Point

~4,500–5,000 °C

Density

~14.5–17.0 g/cm³

Product Codes

NCZ-1554K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$384.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$476.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''

CAS No.

58397-70-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~231.71 g/mol

Melting Point

~2,700–3,200 °C

Boiling Point

~4,500–5,000 °C

Density

~14.5–17.0 g/cm³

Product Codes

NCZ-1553K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$414.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$497.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250''

CAS No.

58397‑70‑9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

231.71 g/mol

Melting Point

~2,700–3,400 °C

Boiling Point

~3,167–3,930 °C

Density

~14.5–17.0 g/cm³ (depends on composition and porosity)

Product Codes

NCZ-1552K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$432.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.995%, Size: 1”, Thickness: 0.250”

$167.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.995%, Size: 1'', Thickness: 0.250''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 170.5 g/mol

Melting Point

2,700 – 3,200 °C

Boiling Point

4,000 – 5,000 °C

Density

16.7 g/cm³

Product Codes

NCZ-1561K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.995%, Size: 1”, Thickness: 0.250”

$148.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Titanium Sputtering Target WTi

Price range: $184.00 through $879.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Tungsten Titanium Sputtering Target WTi
CAS No. 58397-70-9
Appearance Grayish-white lustrous
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient WTi
Molecular Weight 231.71 g/mol
Melting Point N/A
Boiling Point N/A
Density 10.4 - 12.0 g/cm³
Product Codes NCZ-146H

Two-dimensional MgAl Layered Double Hydroxide (MgAl-LDH) Powder, 500 mg/bottle

$517.00
Product Two-dimensional MgAl Layered Double Hydroxide (MgAl-LDH) Powder, 500 mg/bottle
CAS No. 11097-59-9
Appearance Fine white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–4µm (Size Can be customized),  Ask for other available size range.
Ingredient Mg₆Al₂(OH)₁₆CO₃·4H₂O
Molecular Weight 603.97 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-584I

Two-dimensional NiAl Layered Double Hydroxide (NiAl-LDH) Powder, 500 mg/bottle

$253.00
Product Two-dimensional NiAl Layered Double Hydroxide (NiAl-LDH) Powder, 500 mg/bottle
CAS No. N/A
Appearance Light green to pale yellow
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20–40nm (Size Can be customized),  Ask for other available size range.
Ingredient Ni₆Al₂(OH)₁₆CO₃·4H₂O
Molecular Weight 604.2 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.2 – 2.4 g/cm³
Product Codes NCZ-585I

Two-dimensional NiFe Layered Double Hydroxide (NiFe-LDH) Powder, 500 mg/bottle

$374.00
Product Two-dimensional NiFe Layered Double Hydroxide (NiFe-LDH) Powder, 500 mg/bottle
CAS No. N/A
Appearance Pale green, layered platele
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 15–20nm (Size Can be customized),  Ask for other available size range.
Ingredient Ni₆Al₂(OH)₁₆CO₃·4H₂O
Molecular Weight 603–610 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.3 – 2.4 g/cm³
Product Codes NCZ-586I
 

Two-dimensional NiFe Layered Double Oxide (NiFe-LDO) Powder, 500 mg/bottle

$462.00
Product Two-dimensional NiFe Layered Double Oxide (NiFe-LDO) Powder, 500 mg/bottle
CAS No. N/A
Appearance Brown
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10–30nm (Size Can be customized),  Ask for other available size range.
Ingredient NiFe₂O₄
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 4.5 – 5.0 g/cm³
Product Codes NCZ-587I

Two-dimensional ZnAl Layered Double Hydroxide (ZnAl-LDH) Powder, 500 mg/bottle

$385.00
Product Two-dimensional ZnAl Layered Double Hydroxide (ZnAl-LDH) Powder, 500 mg/bottle
CAS No. N/A
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–3µm (Size Can be customized),  Ask for other available size range.
Ingredient Zn₆Al₂(OH)₁₆CO₃·4H₂O
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 0.2–0.5 g/cm³
Product Codes NCZ-588I
 

Two-dimensional ZnNiAl Layered Double Hydroxide (ZnNiAl-LDH) Powder, 500 mg/bottle

$385.00
Product Two-dimensional ZnNiAl Layered Double Hydroxide (ZnNiAl-LDH) Powder, 500 mg/bottle
CAS No. N/A
Appearance White to pale-green
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 0.5–2µm (Size Can be customized),  Ask for other available size range.
Ingredient Zn₄Ni₂Al₂(OH)₁₆CO₃·4H₂O
Molecular Weight 650–700 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.2–2.4 g/cm³
Product Codes NCZ-589I

Ultra Fine Magnetic Fe3O4 Nanoparticle for Biomolecular Coupling, 2-5nm

Price range: $286.00 through $539.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Ultra Fine Magnetic Fe3O4 Nanoparticle for Biomolecular Coupling, 2-5nm
CAS No. 1317-61-9
Appearance Brown
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 2-5nm (Size Can be customized),  Ask for other available size range.
Ingredient Fe3O4
Molecular Weight 231.53 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.0–5.17 g/cm³
Product Codes NCZ-590I
 

Ultralight Graphene Aerogel, Diameter: 1.2±0.1 cm, Height: 1.2±0.1 cm

Price range: $196.00 through $743.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/ 196 € 5 pieces/ 743 € Contact us for tailored quotes on larger quantities & experience exceptional solutions from our experts.

Ultralight Graphene Aerogel, Diameter: 1.2±0.1 cm, Height: 1.2±0.1 cm

Price range: $201.00 through $764.00
Select options This product has multiple variants. The options may be chosen on the product page
Please contact us for quotes for larger quantities !   Graphene aerogels are materials which have elasticity and they can easily gain their original form after some compression. In addition, the low density of graphene aerogels enables them to be very absorbent. This material can absorb more than 850 times of its own weight. This property means that it could be useful for environmental clean-ups like oil spills, and the aerogels only need to be picked up later after absorbing the spilled material. Graphene aerogel may also have some applications in both the storage and the transfer of energy by enabling the creation of lighter, higher-energy-density batteries and vigorous research is being done on the matter.

Ultralight Graphene Aerogel, Diameter: 2±0.4 cm, Height: 2±0.4 cm

Price range: $260.00 through $1,039.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/ 260 € 5 pieces/ 1039 €  Contact us for tailored quotes on larger quantities & experience exceptional solutions from our experts.

Ultralight Graphene Aerogel, Diameter: 2±0.4 cm, Height: 2±0.4 cm

Price range: $267.00 through $1,069.00
Select options This product has multiple variants. The options may be chosen on the product page
Please contact us for quotes for larger quantities !   Graphene aerogels are materials which have elasticity and they can easily gain their original form after some compression. In addition, the low density of graphene aerogels enables them to be very absorbent. This material can absorb more than 850 times of its own weight. This property means that it could be useful for environmental clean-ups like oil spills, and the aerogels only need to be picked up later after absorbing the spilled material. Graphene aerogel may also have some applications in both the storage and the transfer of energy by enabling the creation of lighter, higher-energy-density batteries and vigorous research is being done on the matter.

Ultrasonic Homogenizer

$3,700.00

Applications of Ultrasonic Homogenizer

Ultrasonic homogenizers have a wide range of applications, including disintegrating cells and biological tissues, DNA protein extraction, RNA hydrolysis, and protein microencapsulation in biology. In chemistry, they are used to accelerate and increase reactions output. They are also used for Earth and sediments treatments in the environment field, as well as quality control, R&D, sample gas removal, dissolution and homogenization, emulsion, and dispersion in general analysis. Additionally, ultrasonic homogenizers can be used in an anti-noise cabin to insulate high noises emitted by ultrasound effects. Our ultrasonic homogenizer packing includes a host, ultrasonic probe, power cord, cable, fuse, operating user manual, sound box, and lifting platform. Choose Nanografi for reliable and high-quality ultrasonic homogenizer solutions tailored to your specific needs.

Ultrasonic Homogenizer Packing List

  1. Host: 1
  2. Ultrasonic Probe: 1
  3. Power Cord: 1
  4. Cable: 1
  5. Fuse: 3
  6. Operating User Manual: 1
  7. Sound Box: 1
  8. Lifting Platform: 1

Upconverting Nanoparticles Water Solution, 10mg/bottle

$1,276.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Upconverting Nanoparticles Water Solution, 10mg/bottle
CAS No. N/A
Appearance Ivory-white to pale color
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 25nm (Size Can be customized),  Ask for other available size range.
Ingredient NaYF₄:Yb³⁺,Er³⁺
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-591I

V2AlC MAXene Powder

$0.00

Product Name: V2AlC MAXene Powder

Product V2AlC MAXene
Colour Black Powder
Purity ≥98 wt%
Ingredient V2AlC
Product Code NCZ-MX-125

V2AlC MAXene Powder APPLICATION FIELDS

High-temperature coating, MXene precursor, conductive self-lubricating ceramic, lithium-ion battery, supercapacitor, electrochemical catalysis. RELATED INFORMATION Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com

V2C MXene Powder

$0.00

Product Name: V2C MXene Powder

Product

V2C MXene Powder

Colour Black Powder
Purity ≥98 wt%
Ingredient V2C
Product Code NCZ-MX-111
APPLICATION FIELDS High-temperature coating, MXene precursor, conductive self-lubricating ceramic, lithium-ion battery, supercapacitor, electrochemical catalysis. RELATED INFORMATION Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com

V4AlC3 MAXene Powder

$0.00

Product Name: V4AlC3 MAXene Powder

V4AlC3 MAX Phase Powder

Product V4AlC3 MAXene Powder
Colour Black Powder
Purity ≥98 wt%
Ingredient V4AlC3
Product Code NCZ-MX-126
APPLICATION FIELDS High-temperature coating, MXene precursor, conductive self-lubricating ceramic, lithium-ion battery, supercapacitor, electrochemical catalysis. RELATED INFORMATION Storage Conditions: Airtight sealed, avoid light, and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com

V4C3 MXene Powder

$0.00

Product Name: V4C3 MXene Powder

Product Code: NCZ-MX-212
Product

 V4C3 MXene Powder

Colour Black Powder
Purity ≥98 wt%
Ingredient  V4C3
CAS NO 12316-56-2
APPLICATION FIELDS High-temperature coating, Mxene precursor, conductive self-lubricating ceramic, lithium-ion battery, supercapacitor, electrochemical catalysis. RELATED INFORMATION Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com

Vanadium (V) Micron Powder Purity: 99.9 %, Size: 100 mesh

Price range: $264.00 through $3,934.00
Select options This product has multiple variants. The options may be chosen on the product page
 25 grams/235 €  100 grams/595 € 500 grams/2140 € 1000 grams/3490 €

Vanadium (V) Micron Powder Purity: 99.9%, Size: 325 mesh

Price range: $219.00 through $3,697.00
Select options This product has multiple variants. The options may be chosen on the product page
25 grams/195 € 100 grams/545 € 500 grams/1985 € 1000 grams/3280 €  

Vanadium (V) oxide isopropoxide

Price range: $58.00 through $245.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Vanadium (V) oxide isopropoxide
CAS No. 5588-84-1
Appearance Pale yellow-orange liquid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient C₉H₂₁O₄V
Molecular Weight 244.2 g/mol
Melting Point 11 °C
Boiling Point 80–82 °C
Density N/A
Product Codes NCZ-187R

Vanadium (V) Sputtering Target

Price range: $133.00 through $547.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Vanadium (V) Sputtering Target

CAS No.

7440-62-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.9415 g/mol

Melting Point

1,910 °C

Boiling Point

3,407 °C

Density

 6.11 g/cm³

Product Codes

NCZ-1308K

Vanadium (V) Sputtering Targets, indium, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$856.00

Product 

Vanadium (V) Sputtering Targets, indium, Purity: 99.5%, Size: 3'', Thickness: 0.125''

CAS No.

7440-62-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.9415 g/mol

Melting Point

1910 °C

Boiling Point

3407 °C

Density

6.11 g/cm³

Product Codes

NCZ-1543K

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$127.00

Product 

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.125''

CAS No.

7440-62-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.9415 g/mol

Melting Point

1910 °C

Boiling Point

3407 °C

Density

6.11 g/cm³

Product Codes

NCZ-1551K

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$114.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.250”

$131.00

Product 

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.250''

CAS No.

7440-62-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.9415 g/mol

Melting Point

1910 °C

Boiling Point

3407 °C

Density

6.11 g/cm³

Product Codes

NCZ-1550K

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.250”

$117.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$210.00

Product 

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

7440‑62‑2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

V(Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.94 g/mol

Melting Point

1890 °C

Boiling Point

3380 °C

Density

 ~6.11 g/cm³

Product Codes

NCZ-1396K

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$184.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.250”

$323.00

Product 

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.250''

CAS No.

7440-62-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.9415 g/mol

Melting Point

1910 °C

Boiling Point

3407 °C

Density

6.11 g/cm³

Product Codes

NCZ-1549K

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.250”

$282.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$333.00

Product 

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.125''

CAS No.

7440-62-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.9415 g/mol

Melting Point

1910 °C

Boiling Point

3407 °C

Density

6.11 g/cm³

Product Codes

NCZ-1548K