Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$907.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound barium zirconate has the formula BaZrO3. An electroceramic, or family of ceramic materials principally employed for their electrical capabilities, is what barium zirconate is. In semiconductor, chemical vapor deposition (CVD), physical vapor deposition (PVD), and optical applications, barium zirconate sputtering targets can be employed. Barium zirconate sputtering targets can also be employed for ferroelectric applications.

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$907.00

Product 

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.125''

CAS No.

12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

183.49 g/mol

Melting Point

 ~2080 °C

Boiling Point

N/A

Density

~5.12 g/cm³

Product Codes

NCZ-1674K

Strontium Titanate (SrTiO3) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$909.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.95%, Size: 4”, Thickness: 0.125” , Grey to Black

$909.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Yttrium Ferrite (Y3Fe5O12) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$909.00

Product 

Yttrium Ferrite (Y3Fe5O12) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''

CAS No.

12068-40-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

706.32 g/mol

Melting Point

~1,790 °C

Boiling Point

N/A

Density

~5.17 – 5.36

Product Codes

NCZ-1514K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$909.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2332K

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

$910.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

$910.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Beryllium Oxide (BeO) Powder >99.95%

Price range: $910.00 through $5,243.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Beryllium Oxide (BeO) Powder >99.95%
CAS No. 1304-56-9
Appearance Colorless to white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 50µm (Size Can be customized),  Ask for other available size range.
Ingredient BeO
Molecular Weight 25.01 g/mol
Melting Point N/A
Boiling Point N/A
Density 3.01 g/cm³
Product Codes NCZ-298I

Manganese (Mn) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$910.00

Product 

Manganese (Mn) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

 7439-96-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

54.93804 g/mol

Melting Point

 1,246 °C

Boiling Point

 2,061 °C

Density

 7.21 g/cm³

Product Codes

NCZ-1950K

Praseodymium (Pr) Micron Powder, Purity: 99.5 %, Size: 325 mesh

$912.00
Select options This product has multiple variants. The options may be chosen on the product page
100 grams/840 € Please contact us for quotes on larger quantities !!!

Praseodymium (Pr) Micron Powder

Purity: 99.5 %, Size: 325 mesh

Technical Properties:

PURITY

 99.5 %

PARTICLE SIZE

325 mesh

MELTING POINT

931 °C

BOILING POINT

3512 °C

DENSITY

6.773 g/cc

FORM  

Powder

ELECTRIC RESISTIVITY

68 microhm-cm @ 25 °C

     

Applications:

Praseodymium has paramagnetic magnetic property at any temperature above 1 K. It is never found free in nature. It is combined with other rare earths in various minerals. It can be found in the minerals monazite and bastnasite. It is reactive and oxidizes in air. Praseodymium is used as alloying agent for the manufacturing of high strength metals used in aircrafts. It is also used in super magnets due to its magnetic properties. Praseodymium is used as doping agent in glass and optic fibers. It gives the yellow color to the glasses and cubic zirconia. It has also applications in electronics. It is used in the core of carbon arc lights which are used in studio lighting and projector lights.

>99% Violet Phosphorus Powder

Price range: $913.00 through $1,562.00
Select options This product has multiple variants. The options may be chosen on the product page
Product >99% Violet Phosphorus Powder
CAS No. 7723-14-0
Appearance Violet to purple
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10-50µm (Size Can be customized),  Ask for other available size range.
Ingredient P
Molecular Weight 30.97 g/mol
Melting Point 610 °C
Boiling Point N/A
Density 2.36 g/cm³
Product Codes NCZ-275I

Graphdiyne Oxide (GDYO) Powder, 10mg

$913.00
Product Graphdiyne Oxide (GDYO) Powder, 10mg
CAS No. N/A
Appearance Brownish or dark
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10–500nm (Size Can be customized),  Ask for other available size range.
Ingredient C₈H₂Oₓ
Molecular Weight 678.18 g/mol
Melting Point N/A
Boiling Point N/A
Density 1.8–2.0 g/cm³
Product Codes NCZ-359I

Lithium Phosphate (Li3PO4) Sputtering Targets, elastomer, Purity: 99.95%, Size: 1”, Thickness: 0.125”

$913.00

Product 

Lithium Phosphate (Li3PO4) Sputtering Targets, elastomer, Purity: 99.95%, Size: 1'', Thickness: 0.125''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

N/A

Density

 ~2.53 g/cm³

Product Codes

NCZ-2019K

Lithium Cobalt Oxide (LiCoO2) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$914.00

Product 

Lithium Cobalt Oxide (LiCoO2) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

CAS No.

12190‑79‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

97.87 g/mol

Melting Point

 ~1,100–1,130 °C (decomposes rather than boils)

Boiling Point

N/A

Density

~4.80–4.95 g/cm³

Product Codes

NCZ-2050K

Germanium (Ge) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$914.00

Product 

Germanium (Ge) Sputtering Targets, indium, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 72.63 g/mol

Melting Point

 938.3 °C

Boiling Point

2,833 °C

Density

 5.32 g/cm³

Product Codes

NCZ-2235K

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2”, Thickness: 0.250”

$914.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2'', Thickness: 0.250''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2558K

ZnSe-based QLED Quantum Dots 455 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

InP-based QLED Quantum Dots 625 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

InP-based QLED Quantum Dots 525 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

Cd-based QLED Quantum Dots 625 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

Cd-based QLED Quantum Dots 525 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

Cd-based QLED Quantum Dots 465 nm

Price range: $915.00 through $1,780.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$919.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Polylactide-block-poly(ethylene glycol)-block-polylactide(PLA-PEG-PLA) (711989)

$919.00
Polylactide-block-poly(ethylene glycol)-block-polylactide(PLA-PEG-PLA) (711989) Appearance                    white irregular blocks PEG                          400, 1000, 1500, 2000, 4000, 6000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm  
Grade Mw of PLA Mw of PEG Price($/20g)
PLA-PEG-PLA-01 2000-4000 400 919
PLA-PEG-PLA-02 5000-10,000 400 919
PLA-PEG-PLA-03 20,000-40,000 400 919
PLA-PEG-PLA-04 60,000-80,000 400 919
PLA-PEG-PLA-05 100,000-200,000 400 919
PLA-PEG-PLA-06 2000-4000 1000 919
PLA-PEG-PLA-07 5000-10,000 1000 919
PLA-PEG-PLA-08 20,000-40,000 1000 919
PLA-PEG-PLA-09 60,000-80,000 1000 919
PLA-PEG-PLA-10 100,000-200,000 1000 919
PLA-PEG-PLA-11 2000-4000 1500 919
PLA-PEG-PLA-12 5000-10,000 1500 919
PLA-PEG-PLA-13 20,000-40,000 1500 919
PLA-PEG-PLA-14 60,000-80,000 1500 919
PLA-PEG-PLA-15 100,000-200,000 1500 919
PLA-PEG-PLA-16 2000-4000 2000 919
PLA-PEG-PLA-17 5000-10,000 2000 919
PLA-PEG-PLA-18 20,000-40,000 2000 919
PLA-PEG-PLA-19 60,000-80,000 2000 919
PLA-PEG-PLA-20 100,000-200,000 2000 919
PLA-PEG-PLA-21 2000-4000 4000 919
PLA-PEG-PLA-22 5000-10,000 4000 919
PLA-PEG-PLA-23 20,000-40,000 4000 919
PLA-PEG-PLA-24 60,000-80,000 4000 919
PLA-PEG-PLA-25 100,000-200,000 4000 919
PLA-PEG-PLA-26 2000-4000 6000 919
PLA-PEG-PLA-27 5000-10,000 6000 919
PLA-PEG-PLA-28 20,000-40,000 6000 919
PLA-PEG-PLA-29 60,000-80,000 6000 919
PLA-PEG-PLA-30 100,000-200,000 6000 919
 
Product Codes- NCZ-2638K

Methoxy poly(ethylene glycol)-b-poly(D,L-lactide)(mPEG-PLA) (721989)

$919.00
Methoxy poly(ethylene glycol)-b-poly(D,L-lactide)(mPEG-PLA) (721989)Appearance                    white irregular blocks m-PEG                        1900, 5000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm .
Grade Mw of PLA Mw of mPEG Price($/20g)
mPEG-PLA-01 2000-4000 1900 919
mPEG-PLA-02 5000-10,000 1900 919
mPEG-PLA-03 20,000-40,000 1900 919
mPEG-PLA-04 60,000-80,000 1900 919
mPEG-PLA-05 100,000-200,000 1900 919
mPEG-PLA-06 2000-4000 5000 919
mPEG-PLA-07 5000-10,000 5000 919
mPEG-PLA-08 20,000-40,000 5000 919
mPEG-PLA-09 60,000-80,000 5000 919
mPEG-PLA-10 100,000-200,000 5000 919
  Product Codes- NCZ-2639K

Poly(lactide-co-glycolide)-block-poly(ethylene glycol)-block-poly(lactide-co-glycolide) (PLGA50/50-PEG-PLGA50/50) (811989)

$919.00
Poly(lactide-co-glycolide)-block-poly(ethylene glycol)-block-poly(lactide-co-glycolide) (PLGA50/50-PEG-PLGA50/50) (811989)Appearance                    yellowish to tan irregular blocks PEG                          400, 1000, 1500, 2000, 4000, 6000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm .
Grade Mw of PLGA Mw of PEG Price($/20g)
PLGA-PEG-PLGA-01 2000-4000 400 919
PLGA-PEG-PLGA -02 5000-10,000 400 919
PLGA-PEG-PLGA -03 20,000-40,000 400 919
PLGA-PEG-PLGA -04 60,000-80,000 400 919
PLGA-PEG-PLGA -05 100,000-200,000 400 919
 
PLGA-PEG-PLGA -06 2000-4000 1000 919
PLGA-PEG-PLGA -07 5000-10,000 1000 919
PLGA-PEG-PLGA -08 20,000-40,000 1000 919
PLGA-PEG-PLGA -09 60,000-80,000 1000 919
PLGA-PEG-PLGA -10 100,000-200,000 1000 919
 
PLGA-PEG-PLGA -11 2000-4000 1500 919
PLGA-PEG-PLGA -12 5000-10,000 1500 919
PLGA-PEG-PLGA -13 20,000-40,000 1500 919
PLGA-PEG-PLGA -14 60,000-80,000 1500 919
PLGA-PEG-PLGA -15 100,000-200,000 1500 919
 
PLGA-PEG-PLGA -16 2000-4000 2000 919
PLGA-PEG-PLGA -17 5000-10,000 2000 919
PLGA-PEG-PLGA -18 20,000-40,000 2000 919
PLGA-PEG-PLGA -19 60,000-80,000 2000 919
PLGA-PEG-PLGA -20 100,000-200,000 2000 919
 
PLGA-PEG-PLGA -21 2000-4000 4000 919
PLGA-PEG-PLGA -22 5000-10,000 4000 919
PLGA-PEG-PLGA -23 20,000-40,000 4000 919
PLGA-PEG-PLGA -24 60,000-80,000 4000 919
PLGA-PEG-PLGA -25 100,000-200,000 4000 919
PLGA-PEG-PLGA -26 2000-4000 6000 919
PLGA-PEG-PLGA -27 5000-10,000 6000 919
PLGA-PEG-PLGA -28 20,000-40,000 6000 919
PLGA-PEG-PLGA -29 60,000-80,000 6000 919
PLGA-PEG-PLGA -30 100,000-200,000 6000 919
Product Codes- NCZ-2640K

Poly(lactide-co-glycolide)-block-poly(ethylene glycol)-block-poly(lactide-co-glycolide) (PLGA85/15-PEG-PLGA85/15) (813989)

$919.00
Poly(lactide-co-glycolide)-block-poly(ethylene glycol)-block-poly(lactide-co-glycolide) (PLGA85/15-PEG-PLGA85/15) (813989) Appearance                    yellowish to tan irregular blocks PEG                          400, 1000, 1500, 2000, 4000, 6000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm 
   
Grade Mw of PLGA Mw of PEG Price($/20g)
PLGA-PEG-PLGA-01 2000-4000 400 919
PLGA-PEG-PLGA -02 5000-10,000 400 919
PLGA-PEG-PLGA -03 20,000-40,000 400 919
PLGA-PEG-PLGA -04 60,000-80,000 400 919
PLGA-PEG-PLGA -05 100,000-200,000 400 919
PLGA-PEG-PLGA -06 2000-4000 1000 919
PLGA-PEG-PLGA -07 5000-10,000 1000 919
PLGA-PEG-PLGA -08 20,000-40,000 1000 919
PLGA-PEG-PLGA -09 60,000-80,000 1000 919
PLGA-PEG-PLGA -10 100,000-200,000 1000 919
PLGA-PEG-PLGA -11 2000-4000 1500 919
PLGA-PEG-PLGA -12 5000-10,000 1500 919
PLGA-PEG-PLGA -13 20,000-40,000 1500 919
PLGA-PEG-PLGA -14 60,000-80,000 1500 919
PLGA-PEG-PLGA -15 100,000-200,000 1500 919
PLGA-PEG-PLGA -16 2000-4000 2000 919
PLGA-PEG-PLGA -17 5000-10,000 2000 919
PLGA-PEG-PLGA -18 20,000-40,000 2000 919
PLGA-PEG-PLGA -19 60,000-80,000 2000 919
PLGA-PEG-PLGA -20 100,000-200,000 2000 919
PLGA-PEG-PLGA -21 2000-4000 4000 919
PLGA-PEG-PLGA -22 5000-10,000 4000 919
PLGA-PEG-PLGA -23 20,000-40,000 4000 919
PLGA-PEG-PLGA -24 60,000-80,000 4000 919
PLGA-PEG-PLGA -25 100,000-200,000 4000 919
PLGA-PEG-PLGA -26 2000-4000 6000 919
PLGA-PEG-PLGA -27 5000-10,000 6000 919
PLGA-PEG-PLGA -28 20,000-40,000 6000 919
PLGA-PEG-PLGA -29 60,000-80,000 6000 919
PLGA-PEG-PLGA -30 100,000-200,000 6000 919
Product Codes- NCZ-2641K

Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA50/50) (821989)

$919.00
Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA50/50) (821989) Appearance                    yellowish to tan irregular blocks m-PEG                        1900, 5000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm 
   
Grade Mw of PLGA Mw of mPEG Price($/20g)
mPEG-PLGA-01 2000-4000 1900 919
mPEG-PLGA-02 5000-10,000 1900 919
mPEG-PLGA-03 20,000-40,000 1900 919
mPEG-PLGA-04 60,000-80,000 1900 919
mPEG-PLGA-05 100,000-200,000 1900 919
mPEG-PLGA-06 2000-4000 5000 919
mPEG-PLGA-07 5000-10,000 5000 919
mPEG-PLGA-08 20,000-40,000 5000 919
mPEG-PLGA-09 60,000-80,000 5000 919
mPEG-PLGA-10 100,000-200,000 5000 919
Product Codes- NCZ-2642K

Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA75/25) (822989)

$919.00
Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA75/25) (822989) Appearance                    yellowish to tan irregular blocks m-PEG                        1900, 5000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm 
   
Grade Mw of PLGA Mw of mPEG Price($/20g)
mPEG-PLGA-01 2000-4000 1900 919
mPEG-PLGA-02 5000-10,000 1900 919
mPEG-PLGA-03 20,000-40,000 1900 919
mPEG-PLGA-04 60,000-80,000 1900 919
mPEG-PLGA-05 100,000-200,000 1900 919
mPEG-PLGA-06 2000-4000 5000 919
mPEG-PLGA-07 5000-10,000 5000 919
mPEG-PLGA-08 20,000-40,000 5000 919
mPEG-PLGA-09 60,000-80,000 5000 919
mPEG-PLGA-10 100,000-200,000 5000 919
Product Codes- NCZ-2643K

Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA85/15) (823989)

$919.00
Poly(ethylene glycol) methyl ether-block-poly(lactide-co-glycolide)(mPEG-PLGA85/15) (823989) Appearance                    yellowish to tan irregular blocks m-PEG                        1900, 5000 Inherent Viscosity               0.10-1.00dl/g Melting Range                  amorphous Residual Solvent                 0.05% Residual Monomer               0.5% Residual Catalyst(Tin)           200ppm
Grade Mw of PLGA Mw of mPEG Price($/20g)
mPEG-PLGA-01 2000-4000 1900 919
mPEG-PLGA-02 5000-10,000 1900 919
mPEG-PLGA-03 20,000-40,000 1900 919
mPEG-PLGA-04 60,000-80,000 1900 919
mPEG-PLGA-05 100,000-200,000 1900 919
mPEG-PLGA-06 2000-4000 5000 919
mPEG-PLGA-07 5000-10,000 5000 919
mPEG-PLGA-08 20,000-40,000 5000 919
mPEG-PLGA-09 60,000-80,000 5000 919
mPEG-PLGA-10 100,000-200,000 5000 919
Product Codes- NCZ-2644K

Barium Titanate Sputtering Target BaTiO3

Price range: $920.00 through $1,110.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Barium Titanate Sputtering Target BaTiO3
CAS No. 12047-27-7
Appearance Solid, white to light gray ceramic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient BaTiO3
Molecular Weight 304.98 g/mol
Melting Point 1,625 °C
Boiling Point N/A
Density 6.02 g/cm³
Product Codes NCZ-105H

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$921.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$924.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

One of the most promising multiferroic materials is bismuth ferrite, an inorganic chemical compound with a perovskite structure and the chemical formula BiFeO3. In order to create a one-phase material called bismuth ferrite (BiFeO3), a bismuth ferrite sputtering target is often manufactured by high temperature sinttering or recrystallizing the mixture of the oxide compound of Bi and Fe. For targets that are sputtering bismuth ferrite, indium bonding is advised.

100g Sodium bis(oxalato)borate (NaBOB) Powder, >99.5%

$924.00
Product 100g Sodium bis(oxalato)borate (NaBOB) Powder, >99.5%
CAS No. 83145-77-1
Appearance White
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient C₄BNaO₈
Molecular Weight 209.84 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-120I

Indium Arsenide (InAs) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

Price range: $926.00 through $4,367.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/840 € 5 pieces/3960 €                           Please contact us for quotes on larger quantities !!!

Indium Arsenide (InAs) Wafers

Size: 3”, Thickness: 625± 25 μm , Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Zinc/Sulphur (Zn/S, N Type)
Orientation  100
Mobility  6000-20000
EPD  ≤50000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound. Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material. Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source. They can be supplied in n type, p type or semi insulating forms with different orientations. Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
  • Indium arsenide (InAs) wafer is used for infrared detectors.
  • Indium arsenide (InAs) wafer  is used for mil specs.
  • Indium arsenide (InAs) wafer  is used for foods.
  • Indium arsenide (InAs) wafer  is used for optical grades.
  • Diode lasers are also made using indium arsenide (InAs) wafer.

Iridium (Ir) Nanopowder, 20-30nm, ≥99.99% (4N) Purity, 1g

$926.00
Product Iridium (Ir) Nanopowder, 20-30nm, ≥99.99% (4N) Purity, 1g
CAS No. 7439-88-5
Appearance Gray to black metallic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20-30nm (Size Can be customized),  Ask for other available size range.
Ingredient Ir
Molecular Weight 192.22 g/mol
Melting Point N/A
Boiling Point N/A
Density 22.56 g/cm³
Product Codes NCZ-431I
 

Scandium (Sc) Sputtering Target

Price range: $927.00 through $2,148.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Scandium (Sc) Sputtering Target

CAS No.

7440-20-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

44.96 g/mol

Melting Point

 1,541 °C

Boiling Point

 2,838 °C

Density

2.99 g/cm³

Product Codes

NCZ-1359K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$927.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes at ~3,600 °C (does not melt under normal pressure)

Boiling Point

 Sublimes directly without boiling phase at ~3,600 °C+

Density

~2.2 g/cm³ (varies with crystallinity and orientation)

Product Codes

NCZ-2335K

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”, Grey to Black

$928.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

High Quality Natural Agate Mortar and Pestle, Size: 4″

Price range: $930.00 through $14,000.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

4" High Quality Natural Agate Mortar and Pestle

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$930.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$930.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, EPI-Ready

Price range: $931.00 through $4,405.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/845  5 pieces/3995                            Please ask for amount of stock before placing an order on Wafer Products Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Quality  EPI-Ready
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

Price range: $931.00 through $4,405.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/845  5 pieces/3995                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

Lead Zirconium Titanate/PZT (O5PbTiZr) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$931.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

An inorganic substance is lead zirconium titanate. This ceramic perovskite material has a strong piezoelectric effect, which means that when an electric field is applied, the compound changes shape. Lead zirconium titanate is employed in a number of practical applications such as ultrasonic transducers and piezoelectric resonators.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$931.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2401K

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

$932.00

Product 

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.125''

CAS No.

12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

183.49 g/mol

Melting Point

 ~2080 °C

Boiling Point

N/A

Density

~5.12 g/cm³

Product Codes

NCZ-1676K

Zinc Oxide (ZnO), 99.9995% (5N5) High Purity Powder, 500g

$933.00
Product Zinc Oxide (ZnO), 99.9995% (5N5) High Purity Powder, 500g
CAS No. 1314-13-2
Appearance White fine
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–5µm (Size Can be customized),  Ask for other available size range.
Ingredient ZnO
Molecular Weight 81.38 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.61 g/cm³
Product Codes NCZ-610I
 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$934.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2331K

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Research Grade, 4H Area: 95%

Price range: $936.00 through $4,176.00
Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide Wafer (SiC-4H) – 4H Size: 3”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality  Research Grade Size (inch)  3”

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$936.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$936.00

 Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

With the chemical formula Al2O3, aluminum oxide is a compound made of aluminum and oxygen. Because of its high melting point, Al2O3 is useful as a refractory material and as an abrasive due to its hardness, as well as for the production of aluminum metal. Thin coatings of aluminum oxide that can

be acquired using aluminum oxide Because of their exceptional qualities, including great resistance to abrasion and corrosion, transparency, mechanical strength and hardness, as well as insulating and optical qualities, sputtering targets are widely employed in a variety of mechanical, optical, and microelectronic applications. All of these characteristics of aluminum oxide film are dependent on several sputtering system parameters, including sputtering rate, target-to-substrate distance, reactive gas pressures, etc.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$936.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium Calcium Manganate (Pr0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$936.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

$936.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.125''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1658K

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$937.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron Sputtering Target B

Price range: $937.00 through $1,758.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Boron Sputtering Target B
CAS No. 7440-42-8
Appearance Solid, dark gray to black, hard and brittle material
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient B
Molecular Weight 10.81 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.34 g/cm³
Product Codes NCZ-108H

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.250”

$940.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$940.00

Product 

Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''

CAS No.

12031-63-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 147.85 g/mol

Melting Point

~1,240–1,257 °C

Boiling Point

N/A

Density

~4.30 g/cm³ (ceramic); up to 4.65 g/cm³ (crystal)

Product Codes

NCZ-2041K