Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.125''

$550.00

Product	Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.125''
CAS No.	409-21-2
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	40.10 g/mol
Melting Point	~2,700 °C
Boiling Point	N/A
Density	~3.21 g/cm³
Product Codes	NCZ-1728K

Add to compare

Quick view

Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$473.00

Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.250''

Add to compare

Quick view

Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.250”

Sputtering Targets

$697.00

Add to cart

Product	Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.250''
CAS No.	409-21-2
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	40.10 g/mol
Melting Point	~2,700 °C
Boiling Point	N/A
Density	~3.21 g/cm³
Product Codes	NCZ-1727K

Add to compare

Quick view

Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.250”

SILICON CARBIDE SPUTTERING TARGETS, 2, SPUTTERING TARGETS NAMES N - S, Sputtering Targets

$598.00

Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.125''

Add to compare

Quick view

Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.125”

Sputtering Targets

$715.00

Add to cart

Product	Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.125''
CAS No.	409-21-2
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	40.10 g/mol
Melting Point	~2,700 °C
Boiling Point	N/A
Density	~3.21 g/cm³
Product Codes	NCZ-1726K

Add to compare

Quick view

Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.125”

SILICON CARBIDE SPUTTERING TARGETS, 3, SPUTTERING TARGETS NAMES N - S, Sputtering Targets

$613.00

Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.250''

Add to compare

Quick view

Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

Sputtering Targets

$728.00

Add to cart

Product	Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.250''
CAS No.	409-21-2
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	40.10 g/mol
Melting Point	~2,700 °C
Boiling Point	N/A
Density	~3.21 g/cm³
Product Codes	NCZ-1725K

Add to compare

Quick view

Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

SILICON CARBIDE SPUTTERING TARGETS, 3, SPUTTERING TARGETS NAMES N - S, Sputtering Targets

$624.00

Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.125''

Add to compare

Quick view

Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.125”

Sputtering Targets

$718.00

Add to cart

Product	Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.125''
CAS No.	409‑21‑2
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	SiC (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	40.10 g/mol
Melting Point	~2730 °C
Boiling Point	N/A
Density	~3.21 g/cm³
Product Codes	NCZ-1393K

Add to compare

Quick view

Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.125”

SILICON CARBIDE SPUTTERING TARGETS, 4, SPUTTERING TARGETS NAMES N - S, Sputtering Targets

$619.00

Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.250''

Add to compare

Quick view

Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

Sputtering Targets

$728.00

Add to cart

Product	Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.250''
CAS No.	409-21-2
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	40.10 g/mol
Melting Point	~2,700 °C
Boiling Point	N/A
Density	~3.21 g/cm³
Product Codes	NCZ-1724K

Add to compare

Quick view

Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

4, Sputtering Targets, SPUTTERING TARGETS NAMES N - S

$624.00

Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Fiber (SiC, Beta, 99+%)

Nanoparticles & Nanopowders, Oxides and Compounds

Select options

$64/10g

$113/25g

$325/100g

Product	Silicon Carbide Fiber (SiC, Beta, 99+%)
CAS No.	409-21-2
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	10–15 µm (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	40.10 g/mol
Melting Point	~2,730 °C
Boiling Point	~3,100 °C
Density	~3.21 g/cm³
Product Codes	NCZ-1175K

Add to compare

Quick view

Add to wishlist

Silicon carbide nanoparticles Alpha

Nanoparticles & Nanopowders

$0.00

Add to cart

Silicon carbide Nanopowder

Silicon carbide Nanoparticles

Nano Silicon carbide

MF:	SiC
Chemical Name:	Silicon carbide Alpha
Purity:	> 99.99%
APS:	50 nm (Size Customization possible)
Form:	Nanopowder
Product Number:	NCZ5001
CAS Number	409-21-2

Silicon carbide nanoparticles Alpha

Note: We supply different products of microparticles and Nanoparticles powder in all sizes range according to the client’s requirements.

Add to compare

Quick view

Add to wishlist

Silicon carbide nanoparticles Beta

Nanoparticles & Nanopowders

$0.00

Add to cart

Silicon carbide beta Nanopowder

Silicon carbide beta Nanoparticles

Nano Silicon carbide beta

MF:	SiC
Chemical Name:	Silicon carbide beta
Purity:	> 99.99%
APS:	50 nm (Size Customization possible)
Form:	Nanopowder
Product Number:	NCZ5002
CAS Number	409-21-2

Note: We supply different products of microparticles and Nanoparticles powder in all size range according to client’s requirements.

Silicon Carbide Nanoparticles/ Nanopowder (SiC, 99.0+%, 40nm, beta)

Add to compare

Quick view

Add to wishlist

Silicon Carbide Nanoparticles/ Nanopowder (SiC, 99.0+%, 40nm, beta)

Nanoparticles & Nanopowders, Oxides and Compounds

Select options

$55/25g

$90/100g

Product	Silicon Carbide Nanoparticles/ Nanopowder (SiC, 99.0+%, 40nm, beta)
CAS No.	409-21-2
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	40nm (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	40.10 g/mol
Melting Point	~2,730 °C
Boiling Point	~3,100 °C
Density	~3.21 g/cm³
Product Codes	NCZ-1174K

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H , Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

INDIUM PHOSPHIDE (INP) WAFERS, 2"

Select options

Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality Mechanical Grade Size (inch) 2”

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Production Grade, 4H Area: 1

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 2", Silicon Wafers & Semiconductor Wafers

Select options

1 piece/565 € 5 pieces/2480 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 1

Technical Properties:

Quality	Production Grade
Size (inch)	2”
Thickness (μm)	350
Ra	≤0.3
4H area	1
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤10
Bow	≤10
Warp	≤25
OF Length	16±2
IF Length	8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Production Grade, 4H Area: 1

Silicon Wafers & Semiconductor Wafers

Select options

Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 1 Technical Properties: Quality Production Grade Size (inch) 2”

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Testing Grade, 4H Area: 80%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 2", Silicon Wafers & Semiconductor Wafers

Select options

1 piece/380 € 5 pieces/1675 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'' , Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Quality	Testing Grade
Size (inch)	2”
Thickness (μm)	350
Ra	≤1
4H area	80%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤25
Bow	≤30
Warp	≤35
OF Length	16±2
IF Length	8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Testing Grade, 4H Area: 80%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 2"

Select options

Silicon Carbide Wafer (SiC-4H) – 4H Size: 2” , Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality Testing Grade Size (inch)

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 3", Silicon Wafers & Semiconductor Wafers

Select options

1 piece/390 € 5 pieces/1790 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Dummy Grade
Size (inch)	3”
Thickness (μm)	350
Ra	≤0.3
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤15
Bow	≤25
Warp	≤35
OF Length	22.0±2.0
IF Length	11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H)- 4H wafer has superior electronic properties, silicon carbide (SiC-6H)– 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

Silicon Wafers & Semiconductor Wafers

Select options

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Production Grade, 4H Area: 100%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 3", Silicon Wafers & Semiconductor Wafers

Select options

1 piece/370 € 5 pieces/1690 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Quality	Production Grade
Size (inch)	3”
Thickness (μm)	350
Ra	≤0.3
4H area	100%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤15
Bow	≤10
Warp	≤25
OF Length	22.0±2.0
IF Length	11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Production Grade, 4H Area: 100%

Silicon Wafers & Semiconductor Wafers

Select options

Silicon Carbide Wafer (SiC-4H)-4H Size: 3”, Thickness: 350 μm, 4H Area: 100% Technical Properties: Quality Production Grade Size (inch) 3” Thickness (μm)

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Research Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 3", Silicon Wafers & Semiconductor Wafers

Select options

1 piece/780 € 5 pieces/3480 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Research Grade
Size (inch)	3”
Thickness (μm)	350
Ra	≤0.3
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤15
Bow	≤10
Warp	≤35
OF Length	22.0±2.0
IF Length	11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Research Grade, 4H Area: 95%

Silicon Wafers & Semiconductor Wafers

Select options

Silicon Carbide Wafer (SiC-4H) – 4H Size: 3”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality Research Grade Size (inch) 3”

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 3", Silicon Wafers & Semiconductor Wafers

Select options

V 1 piece/385 € 5 pieces/1745 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Testing Grade
Size (inch)	3”
Thickness (μm)	350
Ra	≤0.3
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤25
Bow	≤30
Warp	≤35
OF Length	22.0±2.0
IF Length	11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

Silicon Wafers & Semiconductor Wafers

Select options

Silicon Carbide Wafer (SiC-4H) – 4H Size: 3”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality Testing Grade Size (inch) 3”

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 100%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 4", Silicon Wafers & Semiconductor Wafers

Select options

1 piece/545 € 5 pieces/2485 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Quality	Mechanical Grade
Size (inch)	4”
Thickness (μm)	350
Ra	≤0.3
4H area	100%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤10
Bow	≤10
Warp	≤25
OF Length	32.5±2
IF Length	18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 100%

Silicon Wafers & Semiconductor Wafers

Select options

Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 100% Technical Properties: Quality Mechanical Grade Size (inch) 4”

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 4", Silicon Wafers & Semiconductor Wafers

Select options

1 piece/495 € 5 pieces/2280 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Quality	Mechanical Grade
Size (inch)	4”
Thickness (μm)	350
Ra	≤1
4H area	80%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤25
Bow	≤30
Warp	≤45
OF Length	32.5±2
IF Length	18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

Silicon Wafers & Semiconductor Wafers

Select options

Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality Mechanical Grade Size (inch) 4”

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 4", Silicon Wafers & Semiconductor Wafers

Select options

1 piece/750 € 5 pieces/3690 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)- 4H

Size: 4'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Testing Grade
Size (inch)	4”
Thickness (μm)	350
Ra	≤0.3
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤25
Bow	≤30
Warp	≤35
OF Length	32.5±2
IF Length	18±2

Fields of Application for Silicon Carbide (SiC-4H) - 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

Silicon Wafers & Semiconductor Wafers

Select options

Silicon Carbide Wafer (SiC-4H)- 4H Size: 4”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality Testing Grade Size (inch) 4” Thickness

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H)- 4H , Size: 4”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 4", Silicon Wafers & Semiconductor Wafers

Select options

1 piece/485 € 5 pieces/2260 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Dummy Grade
Size (inch)	4”
Thickness (μm)	350
Ra	≤0.3
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤15
Bow	≤25
Warp	≤35
OF Length	32.5±2
IF Length	18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H)- 4H , Size: 4”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

Silicon Wafers & Semiconductor Wafers

Select options

Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality Dummy Grade Size (inch) 4”

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H)- 4H, Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 2"

Select options

Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality Dummy Grade Size (inch) 2”

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-4H)- 4H, Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 2", Silicon Wafers & Semiconductor Wafers

Select options

1 piece/380 € 5 pieces/1675 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Dummy Grade
Size (inch)	2”
Thickness (μm)	350
Ra	≤1
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤15
Bow	≤25
Warp	≤35
OF Length	16±2
IF Length	8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-6H) – 6H , Size: 2”, Thickness: 350 μm, Dummy Grade, Usable Area: 95%

SILICON CARBIDE WAFER ( SIC-6H ) - 6H, 2"

Select options

1 piece/495 € 5 pieces/2190 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-6H) - 6H

Size: 2'', Thickness: 350 μm, Usable Area: 95%

Technical Properties:

Quality	Dummy Grade
Size (inch)	2”
Thickness (μm)	350
Ra	≤1
Usable Area	95%
Orientation	<0001>±0.5°
Resistivity	0.02 ~0.1 Ω·cm
TTV	≤25
Bow	≤30
Warp	≤45
OF Length	15.9±1.7
IF Length	8±1.7

Fields of Application for Silicon Carbide (SiC-6H)- 6H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-6H) - 6H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

Add to compare

Quick view

Add to wishlist

Silicon Carbide Wafer (SiC-6H) – 6H , Size: 2”, Thickness: 350 μm, Dummy Grade, Usable Area: 95%

SILICON CARBIDE WAFER ( SIC-6H ) - 6H, 2"

Select options

Silicon Carbide Wafer (SiC-6H) – 6H Size: 2”, Thickness: 350 μm, Usable Area: 95% Technical Properties: Quality Dummy Grade Size (inch) 2”

Silicon Dioxide (amorphous), SiO2 99.99% 4N High Purity Powder

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (amorphous), SiO2 99.99% 4N High Purity Powder

High Purity Inorganic Chemicals

Select options

Product	Silicon Dioxide (amorphous), SiO2 99.99% 4N High Purity Powder
CAS No.	7631-86-9
Appearance	White to off-white fine
Purity	≥99%, ≥99.9%, ≥95%(Other purities are also available)
APS	1µm (Size Can be customized), Ask for other available size range.
Ingredient	SiO₂
Molecular Weight	60.08 g/mol
Melting Point	N/A
Boiling Point	N/A
Density	2.2 g/cm³
Product Codes	NCZ-516I

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in 1, 2-Propanediol, Size: 22 nm, Amorphous, 15 wt%

Single Metal Oxide Nanoparticles, silicon Dioxide Nanoparticles, Nanoparticles

Select options

30 ml/34 € 60 ml/76 € 120 ml/148 € 500 ml/420 € 1000 ml/675 €

Please contact us for quotes on larger quantities !!!

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in 1, 2-Propanediol

Size: 22 nm, Amorphous, 15 wt%

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in 1, 2-Propanediol, Size: 22 nm, Amorphous, 15 wt%

DISPERSIONS, METAL AND OXIDE DISPERSIONS

Select options

30 ml/54 € 60 ml/119 € 120 ml/231 € 500 ml/656 € 1000 ml/1008 € Please contact us for quotes on larger

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Ethylene Glycol, Size: 22 nm, Amorphous, 15 wt%

Single Metal Oxide Nanoparticles, silicon Dioxide Nanoparticles, Nanoparticles

Select options

30 ml/34 € 60 ml/76 € 120 ml/148 € 500 ml/420 € 1000 ml/675 €

Please contact us for quotes on larger quantities !!!

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Ethylene Glycol

Size: 22 nm, Amorphous, 15 wt%

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Ethylene Glycol, Size: 22 nm, Amorphous, 15 wt%

DISPERSIONS, METAL AND OXIDE DISPERSIONS

Select options

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Ethylene Glycol Size: 22 nm, Amorphous, 15 wt%

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Water, Amorphous, Size: 28 nm, 26 wt%

DISPERSIONS, METAL AND OXIDE DISPERSIONS

Select options

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Water Amorphous, Size: 28 nm, 26 wt%

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Water, Amorphous, Size: 28 nm, 26 wt%

Single Metal Oxide Nanoparticles, silicon Dioxide Nanoparticles, Nanoparticles

Select options

120 ml/34 € 500 ml/62 € 1000 ml/92 €

Please contact us for quotes on larger quantities !!!

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Water

Amorphous, Size: 28 nm, 26 wt%

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Water, Amorphous, Size: 8-33 nm, 26 wt%

DISPERSIONS, METAL AND OXIDE DISPERSIONS

Select options

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Water Amorphous, Size: 8-33 nm, 26 wt%

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Water, Amorphous, Size: 8-33 nm, 26 wt%

Single Metal Oxide Nanoparticles, silicon Dioxide Nanoparticles, Nanoparticles

Select options

120 ml/42 € 500 ml/61 € 1000 ml/93 €

Please contact us for quotes on larger quantities !!!

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Water

Amorphous, Size: 8-33 nm, 26 wt%

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles, Amorphous, Purity: 98.5+%, Size: 55-75 nm

Single Metal Oxide Nanoparticles, silicon Dioxide Nanoparticles, Nanoparticles

Select options

25 grams/24 € 100 grams/37 € 500 grams/71 € 1000 grams/105 €

Please contact us for quotes on larger quantities !!!

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles

Amorphous, Purity: 98.5+%, Size: 55-75 nm

Technical Properties:

Purity (%)	98.5+
Color	white
Average Particle Size (nm)	55-75
Specific Surface Area (m²/g)	150-550
Bulk Density (g/cm3)	<0.1
True Density (g/cm3)	2,2
Elemental Analysis (%)	Fe	Ca	Ti	Na
	0.004	0.013	0.022	0.008

Applications:

Silicon dioxide nanoparticle is used as additive for plastics, rubber, ceramics, porcelain, glass, adhesives, fibers, and many other products. It is added to concrete and construction composites as strengthening filler. It has also applications in biomedical field such as drug delivery and theranostics. Silicon dioxide is also used in environmental protection products.

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles, Amorphous, Purity: 99.5+%, Size: 15-35 nm

silicon Dioxide Nanoparticles, Nanoparticles & Nanopowders

Select options

25 grams/24 € 100 grams/38 € 500 grams/72 € 1000 grams/106 €

Please contact us for quotes on larger quantities !!!

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles

Amorphous, Purity: 99.5+%, Size: 15-35 nm

Technical Properties:

Purity (%)	99.5
Color	white
Average Particle Size (nm)	15-35
Specific Surface Area (m²/g)	150-550
Bulk Density (g/cm3)	<0.1
True Density (g/cm3)	2,2
Elemental Analysis (%)	Fe	Ca	Ti	Na
	0.002	0.007	0.012	0.003

Applications:

Silicon dioxide nanoparticle is used as additive for plastics, rubber, ceramics, porcelain, glass, adhesives, fibers, and many other products. It is added to concrete and construction composites as strengthening filler. It has also applications in biomedical field such as drug delivery and theranostics. Silicon dioxide is also used in environmental protection products.

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles, P-type, Purity: 99.65+%, Size: 13-23 nm, Nonporous and Amorphous

silicon Dioxide Nanoparticles, Nanoparticles & Nanopowders

Select options

25 grams/19 € 100 grams/33 € 500 grams/66 € 1000 grams/105 €

Please contact us for quotes on larger quantities !!!

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles

P-type, Purity: 99.65+%, Size: 13-23 nm, Nonporous and Amorphous

Technical Properties:

Purity (%)	99.65+
SiOx	x=1.2-1.6
Color	white
Morphology	porous
Average Particle Size (nm)	13-23
Specific Surface Area (m²/g)	650
Ultraviolet Reflectivity (%)	>85
Bulk Density (g/cm3)	0,1
True Density (g/cm3)	2,2
Hydroxyl Content (%)	>45
Pore Size (nm)	2.0-6.0
Pore Volume (cm3/g)	0.8-1.5
Elemental Analysis (%)	Al	Fe	Mg	Ca
	0.002	0.001	0.001	0.002

Applications:

Silicon dioxide nanoparticle is used as additive for plastics, rubber, ceramics, porcelain, glass, adhesives, fibers, and many other products. It is added to concrete and construction composites as strengthening filler. It has also applications in biomedical field such as drug delivery and theranostics. Silicon dioxide is also used in environmental protection products.

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles, Purity: 95.9+%, Size: 18-35 nm, KH570 Coated

silicon Dioxide Nanoparticles, Nanoparticles & Nanopowders

Select options

25 grams/26 € 100 grams/53 € 500 grams/119 € 1000 grams/141 €

Please contact us for quotes on larger quantities !!!

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles

Purity: 95.9+%, Size: 18-35 nm, KH570 Coated

Technical Properties:

Purity (%)	95.9+
Color	white
Average Particle Size (nm)	18-35
Specific Surface Area (m²/g)	150-550
Bulk Density (g/cm3)	<0.1
True Density (g/cm3)	2,2
Elemental Analysis (%)	SiO2 : KH570	Fe	Ca	Mg	S
	95.9 : 3-4	0.032	0.056	0.0085	0.025

Chemical Properties:

Silicon dioxide nanoparticles coated with KH570-Silane coupling agent is super oleophilic, and hydrophilic. It is suitable for both oily and waterborne systems.

Applications:

Silicon dioxide nanoparticle is used as additive for plastics, rubber, ceramics, porcelain, glass, adhesives, fibers, and many other products. It is added to concrete and construction composites as strengthening filler. It has also applications in biomedical field such as drug delivery and theranostics. Silicon dioxide is also used in environmental pro tection products. Silane KH-570 coupling agent is used to improve physical and chemical properties of glass reinforced and mineral filled resins, and reinforced thermoplastic polymers.

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles, Purity: 96.3+%, Size: 18-35 nm, KH550 Coated

Single Metal Oxide Nanoparticles, silicon Dioxide Nanoparticles, Nanoparticles

Select options

25 grams/26 € 100 grams/53 € 500 grams/98 € 1000 grams/141 €

Please contact us for quotes on larger quantities !!!

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles

Purity: 96.3+%, Size: 18-35 nm, KH550 Coated

Technical Properties:

Purity (%)	96.3+
Color	white
Average Particle Size (nm)	18-35
Specific Surface Area (m²/g)	150-550
Bulk Density (g/cm3)	<0.1
True Density (g/cm3)	2,2
Elemental Analysis (%)	SiO2 : KH550	Fe	Ca	Ti	Na
	96.3 : 3-4	0.02	0.002	0.012	0.025

Chemical Properties:

Silicon dioxide nanoparticles coated with KH570-Silane coupling agent is super oleophilic, and hydrophilic. It is suitable for both oily and waterborne systems.

Applications:

Silicon dioxide nanoparticle is used as additive for plastics, rubber, ceramics, porcelain, glass, adhesives, fibers, and many other products. It is added to concrete and construction composites as strengthening filler. It has also applications in biomedical field such as drug delivery and theranostics. Silicon dioxide is also used in environmental protection products. Silane KH-550 is used to increase mechanical, electrical, anti-aging, and water resistance properties for organic polymers and inorganic fillers.

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles, Purity: 97.3+ wt%, Size: 16 nm, Coated with 2 wt% Silane

Single Metal Oxide Nanoparticles, silicon Dioxide Nanoparticles, Nanoparticles

Select options

5 grams/17 € 25 grams/31 € 100 grams/85 € 500 grams/202 € 1000 grams/338 €

Please contact us for quotes on larger quantities !!!

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles

Purity: 97.3+ wt%, Size: 16 nm, Coated with 2 wt% Silane

Technical Properties:

Purity (%)	97.3+
Color	white
Average Particle Size (nm)	16
Specific Surface Area (m²/g)	150-550
Loss of Weight in Drying (wt%)	5,4
Loss of Weight on Ignition (wt%)	9,4
PH	6.0
Bulk Density (g/cm3)	<0.05
True Density (g/cm3)	2,2
Elemental Analysis (%)	SiO2 : Silane	Mg	Ca	S	Fe
	97.3 : 2.0	0.005	0.022	0.0126	0.0056

Chemical Properties:

Silicon dioxide nanoparticles coated withSilane coupling agent is super oleophilic, and hydrophilic. It is easier to be dispersed.

Applications:

Silicon dioxide nanoparticle is used as additive for plastics, rubber, ceramics, porcelain, glass, adhesives, fibers, and many other products. It is added to concrete and construction composites as strengthening filler. It has also applications in biomedical field such as drug delivery and theranostics. Silicon dioxide is also used in environmental protection products.

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles, S-type, Spherical, Purity: 99.95+%, Size: 13-22 nm, Nonporous and Amorphous

silicon Dioxide Nanoparticles, Nanoparticles & Nanopowders

Select options

25 grams/19 € 100 grams/33 € 500 grams/66 € 1000 grams/105 €

Please contact us for quotes on larger quantities !!!

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles

S-type, Spherical, Purity: 99.95+%, Size: 13-22 nm, Nonporous and Amorphous

Technical Properties:

Purity (%)	99.95+
SiOx	x=1.2-1.6
Color	white
Morphology	spherical
Average Particle Size (nm)	13-22
Specific Surface Area (m²/g)	165-195
Ultraviolet Reflectivity (%)	75
Bulk Density (g/cm3)	0,1
True Density (g/cm3)	2,2
Elemental Analysis (%)	Al	Fe	Mg	Ca
	0.001	0.001	0.001	0.004

Applications:

Silicon dioxide nanoparticle is used as additive for plastics, rubber, ceramics, porcelain, glass, adhesives, fibers, and many other products. It is added to concrete and construction composites as strengthening filler. It has also applications in biomedical field such as drug delivery and theranostics. Silicon dioxide is also used in environmental protection products.

Silicon Dioxide (SiO2) Nanowires Powder, 1g/bottle

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Nanowires Powder, 1g/bottle

High Purity Inorganic Chemicals

$253.00

Add to cart

Product	Silicon Dioxide (SiO2) Nanowires Powder, 1g/bottle
CAS No.	60676-86-0
Appearance	White to off-white fibrous
Purity	≥99%, ≥99.9%, ≥95%(Other purities are also available)
APS	1–10µm (Size Can be customized), Ask for other available size range.
Ingredient	SiO₂
Molecular Weight	60.08 g/mol
Melting Point	N/A
Boiling Point	N/A
Density	2.2 g/cm³
Product Codes	NCZ-517I

Silicon Dioxide (SiO2) Sputtering Target

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Sputtering Target

SPUTTERING TARGETS NAMES T - Z, Deposition Materials

Select options

Product	Silicon Dioxide (SiO2) Sputtering Target
CAS No.	7631-86-9
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	NA (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	60.08 g/mol
Melting Point	~1,710 °C
Boiling Point	~2,950 °C
Density	~2.2–2.65 g/cm³
Product Codes	NCZ-1323K

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, indium, Purity: 99.995%, Size: 1'', Thickness: 0.125''

Add to compare

Quick view

Add to wishlist

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, indium, Purity: 99.995%, Size: 1”, Thickness: 0.125”

Sputtering Targets

$366.00

Add to cart

Product	Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, indium, Purity: 99.995%, Size: 1'', Thickness: 0.125''
CAS No.	60676-86-0
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	60.08 g/mol
Melting Point	~1715 °C
Boiling Point	~2230 °C
Density	~2.20 g/cm³
Product Codes	NCZ-1709K

Filter by price

Product categories

Applications of Sputtering Targets;

Applications of Sputtering Targets;

Applications of Sputtering Targets;

Applications of Sputtering Targets;

Applications of Sputtering Targets;

Applications of Sputtering Targets;

Silicon carbide Nanoparticles

Nano Silicon carbide

Silicon carbide beta Nanopowder

Silicon carbide beta Nanoparticles

Nano Silicon carbide beta

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 1

Technical Properties:

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'' , Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon Carbide Wafer (SiC-4H)- 4H

Size: 4'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Fields of Application for Silicon Carbide (SiC-4H) - 4H Wafer

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon Carbide Wafer (SiC-6H) - 6H

Size: 2'', Thickness: 350 μm, Usable Area: 95%

Technical Properties:

Fields of Application for Silicon Carbide (SiC-6H)- 6H Wafer

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in 1, 2-Propanediol

Size: 22 nm, Amorphous, 15 wt%

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Ethylene Glycol

Size: 22 nm, Amorphous, 15 wt%

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Water

Amorphous, Size: 28 nm, 26 wt%

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles Dispersion in Water

Amorphous, Size: 8-33 nm, 26 wt%

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles

Amorphous, Purity: 98.5+%, Size: 55-75 nm

Technical Properties:

Applications:

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles

Amorphous, Purity: 99.5+%, Size: 15-35 nm

Technical Properties:

Applications:

Silicon Dioxide (SiO2) Nanopowder/Nanoparticles

P-type, Purity: 99.65+%, Size: 13-23 nm, Nonporous and Amorphous

Technical Properties: