Lithium Cobalt Oxide (LiCoO2) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$565.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Formula LiCoO2 represents the chemical compound lithium cobalt oxide. A crystalline solid that is dark blue or bluish-gray in color, lithium cobalt oxide is frequently utilized in the positive electrodes of lithium-ion batteries.

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$565.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Magnesium (Mg) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

$565.00

Product 

Magnesium (Mg) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.250''

CAS No.

7439-95-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 24.305 g/mol

Melting Point

 650 °C

Boiling Point

 1,090 °C

Density

1.738 g/cm³

Product Codes

NCZ-1988K

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

$566.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

$566.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lead Zirconate (PbZrO3) Sputtering Target

Price range: $566.00 through $993.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lead Zirconate (PbZrO3) Sputtering Target

CAS No.

 19824-65-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

303.5 g/mol

Melting Point

~1,250–1,300 °C

Boiling Point

NA

Density

~8.3–8.5 g/cm³

Product Codes

NCZ-1318K

Lead Telluride (PbTe) Sputtering Target

Price range: $566.00 through $1,794.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lead Telluride (PbTe) Sputtering Target

CAS No.

1314-91-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 334.8 g/mol

Melting Point

~924 °C

Boiling Point

~1,476 °C

Density

~8.16 g/cm³

Product Codes

NCZ-1345K

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$566.00

Product 

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

1314-98-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 (ZnS) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

97.45 g/mol

Melting Point

~1700 °C

Boiling Point

N/A

Density

 4.09 g/cm³

Product Codes

NCZ-1506K

Niobium Oxide (Nb2O5) Sputtering Targets, indium, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$566.00

Product 

Niobium Oxide (Nb2O5) Sputtering Targets, indium, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

1313-96-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 265.81 g/mol

Melting Point

~1512 °C

Boiling Point

N/A

Density

 4.6 – 4.9 g/cm³

Product Codes

NCZ-1803K

Magnesium Fluoride (MgF2) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$567.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silver (Ag) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$568.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$568.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Magnesium Fluoride (MgF2) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$568.00

Product 

Magnesium Fluoride (MgF2) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

7783-40-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 62.30 g/mol

Melting Point

~1263 °C

Boiling Point

~2260 °C

Density

 3.18 g/cm³

Product Codes

NCZ-1984K

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$568.00

Product 

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

 1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 277.64 g/mol

Melting Point

 ~1,910 °C

Boiling Point

 3,000 °C(approx., decomposes)

Density

~7.18 g/cm³ (sintered form)

Product Codes

NCZ-2217K

Cobalt Iron Boron (Co-Fe-B) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$568.00

Product 

Cobalt Iron Boron (Co-Fe-B) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~135.943 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

0.986 g/cm³ (SAM — verify via COA due to low value)

Product Codes

NCZ-2278K

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$568.00

Product 

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2392K

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.125”

$570.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5%, Size: 6”, Thickness: 0.125”

$570.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel Oxide (NiO) Sputtering Targets, Purity: 99.9%, Size:1”, Thickness: 0.250”

$570.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.125”

$570.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, indium, Purity: 99.995%, Size: 4”, Thickness: 0.125”

$571.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

$571.00

Product 

Vanadium (V) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.250''

CAS No.

7440-62-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.9415 g/mol

Melting Point

1910 °C

Boiling Point

3407 °C

Density

6.11 g/cm³

Product Codes

NCZ-1545K

Nickel (Ni) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$571.00

Product 

Nickel (Ni) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.125''

CAS No.

7440-02-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 58.69 g/mol

Melting Point

 1,455 °C

Boiling Point

 2,732 °C

Density

 8.90 g/cm³

Product Codes

NCZ-1873K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness:0.125”

$571.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness:0.125''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2248K

Chromium (Cr) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$572.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silvery, shiny, hard, and brittle, chromium is a metal that resists corrosion and has a high mirror polish. The automotive industry finds extensive use for chromium sputtering targets. Chromium sputtering targets work well as a shiny coating for bumpers and wheels. Chromium sputtering targets can be employed in a variety of vacuum applications, such as automotive glass coatings.

10mL Gold (Au) Nanoparticles Dispersion in Organic Solvent, 50μg/mL

Price range: $572.00 through $1,309.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 10mL Gold (Au) Nanoparticles Dispersion in Organic Solvent, 50μg/mL
CAS No. 7440-57-5
Appearance Red, ruby-red, or purple
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 5–20nm (Size Can be customized),  Ask for other available size range.
Ingredient Au
Molecular Weight 196.97 g/mol
Melting Point N/A
Boiling Point N/A
Density 19.32 g/cm³
Product Codes NCZ-126I
 

Molybdenum Disulfide (MoS2) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$572.00

Product 

Molybdenum Disulfide (MoS2) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''

CAS No.

 1317-33-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 160.07 g/mol

Melting Point

 ~1185 °C

Boiling Point

 ~4500 °C

Density

 ~5.06 g/cm³

Product Codes

NCZ-1912K

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$572.00

Product 

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 1'', Thickness: 0.250''

CAS No.

123273‑09‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~313.9 g/mol

Melting Point

 ~1,550 °C (approximate; ceramic decomposition likely above)

Boiling Point

N/A

Density

 ~5.3 g/cm³ @ room temp

Product Codes

NCZ-2157K

Titanium Boride (TiB2) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.250”

$573.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel (Ni) Sputtering Targets, Purity: 99.995%, Size: 8”, Thickness: 0.250”

$574.00

Product 

Nickel (Ni) Sputtering Targets, Purity: 99.995%, Size: 8'', Thickness: 0.250''

CAS No.

7440-02-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 58.69 g/mol

Melting Point

 1,455 °C

Boiling Point

 2,732 °C

Density

 8.90 g/cm³

Product Codes

NCZ-1862K

Ytterbium (Yb) Metal 99.5% 2N5

$574.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Ytterbium (Yb) Metal 99.5% 2N5
CAS No. 7440-64-4
Appearance Silvery-white, soft and malleable metal
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100µm (Size Can be customized),  Ask for other available size range.
Ingredient Yb
Molecular Weight 173.04 g/mol
Melting Point N/A
Boiling Point N/A
Density 6.9 g/cm³
Product Codes NCZ-596I
 

Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.250”

$574.00

Product 

Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.250''

CAS No.

 10043-11-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

24.82 g/mol

Melting Point

~2973 °C

Boiling Point

N/A

Density

~2.1 g/cm³

Product Codes

NCZ-2372K

Boron (B) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$574.00

Product 

Boron (B) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2389K

Ytterbium Oxide (Yb2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$575.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5, Size: 8”, Thickness: 0.250”

$575.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5, Size: 8”, Thickness: 0.250”

$575.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$576.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

$576.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel Chromium (Ni-Cr) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.125”

$576.00

Product 

Nickel Chromium (Ni-Cr) Sputtering Targets, Purity: 99.95%, Size: 6'', Thickness: 0.125''

CAS No.

 11106-97-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~110.69 g/mol

Melting Point

 ~1,400 °C

Boiling Point

 ~2,730–2,750 °C

Density

 ~8.4 – 8.5 g/cm³

Product Codes

NCZ-1851K

Nickel Chromium (Ni-Cr) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$576.00

Product 

Nickel Chromium (Ni-Cr) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.250''

CAS No.

 11106-97-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~110.69 g/mol

Melting Point

 ~1,400 °C

Boiling Point

 ~2,730–2,750 °C

Density

 ~8.4 – 8.5 g/cm³

Product Codes

NCZ-1852K

Cesium carbonate(Cs2CO3, 99.9%) (557836)

$576.00
Select options This product has multiple variants. The options may be chosen on the product page
Cesium carbonate(Cs2CO3, 99.9%) (557836)  
Cs2CO3 min% Impurities Max ppm
Li K Na Ca Mg Fe Al Si Rb Pb
99.9 5 50 50 30 5 10 50 50 200 5
Product Codes- NCZ-2743K

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$577.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1650K

Selenium (Se) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$577.00

Product 

Selenium (Se) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

7782-49-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 78.96 g/mol

Melting Point

 221 °C

Boiling Point

 685 °C

Density

 4.81 g/cm³

Product Codes

NCZ-1772K

Manganese (Mn) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$577.00

Product 

Manganese (Mn) Sputtering Targets, Purity: 99.95%, Size: 6'', Thickness: 0.250''

CAS No.

 7439-96-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

54.93804 g/mol

Melting Point

 1,246 °C

Boiling Point

 2,061 °C

Density

 7.21 g/cm³

Product Codes

NCZ-1946K

Copper (Cu) Sputtering Targets, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$577.00

Product 

Copper (Cu) Sputtering Targets, Purity: 99.999%, Size: 8'', Thickness: 0.250''

CAS No.

7440-50-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

63.55 g/mol

Melting Point

1,084 °C

Boiling Point

 2,562 °C

Density

8.96 g/cm³

Product Codes

NCZ-2253K

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$578.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation.

In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$578.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Molybdenum Oxide (MoO3) Sputtering Target

Price range: $578.00 through $1,056.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Molybdenum Oxide (MoO3) Sputtering Target

CAS No.

 1313-27-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

143.94 g/mol

Melting Point

 795–802 °C

Boiling Point

1,155 °C

Density

4.69 – 4.70 g/cm³

Product Codes

NCZ-1375K

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$579.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Formulated as BaTiO3, barium titanate is an inorganic substance. When manufactured, barium titanate is transparent and has a white powder appearance.

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.125”

$579.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$579.00

Product 

Zinc Oxide (ZnO) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

1314‑13‑2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

ZnO (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

81.38 g/mol

Melting Point

~1975 °C

Boiling Point

~2360 °C

Density

 ~5.61 g/cm³

Product Codes

NCZ-1452K

High Purity (>95 wt%) Single-walled Carbon Nanotubes (Moving Catalyst Method), 1g

$579.00
Product High Purity (>95 wt%) Single-walled Carbon Nanotubes (Moving Catalyst Method), 1g
CAS No. 308068-56-6
Appearance Black, fluffy
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–2nm (Size Can be customized),  Ask for other available size range.
Ingredient C
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 1.3–1.4 g/cm³
Product Codes NCZ-387I

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$579.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

Approx. 260–270 g/mol (depends on ratio)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2197K

Yttrium(III) Oxide (Y2O3) Nanopowder, 20nm, ≥99.99% (4N) Purity, 100g

$579.00
Product Yttrium(III) Oxide (Y2O3) Nanopowder, 20nm, ≥99.99% (4N) Purity, 100g
CAS No. 1314-36-9
Appearance Fine white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20nm (Size Can be customized),  Ask for other available size range.
Ingredient Y2O3
Molecular Weight 225.81 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.01 g/cm³
Product Codes NCZ-606I
 

Ytterbium Oxide (Yb2O3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$580.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs  in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Cobalt (Co) Sputtering Targets, indium, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$580.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical element cobalt has the atomic number 27 and the symbol Co. Cobalt is a silver-gray, hard, and shiny metal. Because it is one of only three room temperature ferromagnets with unaxial symmetry and hence suitability for digital recording, cobalt is employed in the production of high-strength, wear-resistant alloys as well as magnetic recording.

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”, Beige to White

$581.00

Product 

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125'', Beige to White

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

~4.23 g/cm³

Product Codes

NCZ-1440K

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$581.00

Product 

Tin (Sn) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1634K

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$581.00

Product 

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.250''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2386K

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$581.00

Product 

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2390K