Borophene Ethanol Dispersion 1 mg/mL

Price range: $595.00 through $6,870.00
Select options This product has multiple variants. The options may be chosen on the product page
DESCRIPTION Borophene is known as atomically thin, two-dimensional sheets of boron. Borophene has remarkable properties like, high electrical conductivity, flexibility

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$595.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Nickel Chromium (Ni-Cr) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$595.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$595.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$595.00

Product 

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1630K

Nickel Oxide (NiO) Sputtering Targets, Purity: 99.9%, Size:1”, Thickness: 0.125”

$595.00

Product 

Nickel Oxide (NiO) Sputtering Targets, Purity: 99.9%, Size:1'', Thickness: 0.125''

CAS No.

1313-99-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~3–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

74.69 g/mol

Melting Point

1,950 °C

Boiling Point

 2,730 °C

Density

 6.67 g/cm³

Product Codes

NCZ-1841K

Carbon Nanotube Sponges, Size: 50 mm x 20 mm, Thickness: 1-2 mm

Price range: $596.00 through $3,101.00
Select options This product has multiple variants. The options may be chosen on the product page
Carbon Nanotube Sponges, Size: 50 mm x 20 mm, Thickness: 1-2mm The carbon nanotube sponge structure is uniform and they possess good mechanical strength, good flexibility, high porosity and low density. They can be used as a purifying agent in order to absorb pollutants. These pollutants can be fertilizers, pesticides or pharmaceuticals found in water, energy storage materials, catalyst carriers or in high-efficiency composite materials.

Nickel Oxide (NiO) Sputtering Targets, Purity: 99.98%, Size:2”, Thickness: 0.125”

$597.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.250”

$598.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Yttrium Ferrite (Y3Fe5O12) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$598.00

Product 

Yttrium Ferrite (Y3Fe5O12) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

12068-40-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

706.32 g/mol

Melting Point

~1,790 °C

Boiling Point

N/A

Density

~5.17 – 5.36

Product Codes

NCZ-1512K

Cadmium Selenide Quantum Dots (CdSe/ZnS QD) 625 nm

Price range: $599.00 through $1,555.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS CdSe QDs have several uses because of their photoluminescence and electroluminescence capabilities. using CdSe quantum dots in;
  • Bioimaging,
  • Light Emitting Diodes (LEDs),
  • Solar Cell,
  • Sensors,
  • Single-electron transistors,
  • Display devices.

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$599.00

Product 

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.125''

CAS No.

 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

233.19 g/mol

Melting Point

~1625 °C

Boiling Point

N/A

Density

 ~6.02 g/cm³

Product Codes

NCZ-2466K

Cobalt (Co) Sputtering Targets, indium, Purity: 99.95%, Size: 2”, Thickness: 0.250”

$600.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical element cobalt has the atomic number 27 and the symbol Co. Cobalt is a silver-gray, hard, and shiny metal. Because it is one of only three room temperature ferromagnets with unaxial symmetry and hence suitability for digital recording, cobalt is employed in the production of high-strength, wear-resistant alloys as well as magnetic recording.

Lithium Titanate (Li2TiO3) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.250”

$600.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 100%

Price range: $601.00 through $2,740.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/545 € 5 pieces/2485 €                 Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Quality  Mechanical Grade
Size (inch)  4”
Thickness (μm)  350
Ra  ≤0.3
4H area  100%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤10
Bow  ≤10
Warp  ≤25
OF Length  32.5±2
IF Length  18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.

Indium Arsenide (InAs) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

Price range: $601.00 through $2,746.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/545 € 5 pieces/2490 €                           Please contact us for quotes on larger quantities !!!

Indium Arsenide (InAs) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Zinc/Sulphur (Zn/S, N Type)
Orientation  100
Mobility  6000-20000
EPD  ≤50000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound. Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material. Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source. They can be supplied in n type, p type or semi insulating forms with different orientations. Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
  • Indium arsenide (InAs) wafer is used for infrared detectors.
  • Indium arsenide (InAs) wafer  is used for mil specs.
  • Indium arsenide (InAs) wafer  is used for foods.
  • Indium arsenide (InAs) wafer  is used for optical grades.
  • Diode lasers are also made using indium arsenide (InAs) wafer.

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$601.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$601.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Niobium Oxide (Nb2O5) Sputtering Targets, Purity: 99.5%, Size: 8”, Thickness: 0.250”

$601.00

Product 

Niobium Oxide (Nb2O5) Sputtering Targets, Purity: 99.5%, Size: 8'', Thickness: 0.250''

CAS No.

1313-96-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 265.81 g/mol

Melting Point

~1512 °C

Boiling Point

N/A

Density

 4.6 – 4.9 g/cm³

Product Codes

NCZ-1804K

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.125”

$602.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Molybdenum Disulfide (MoS2) Sputtering Targets, indium, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$602.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, indium, Purity: 99.995%, Size: 3”, Thickness: 0.125”

$602.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$602.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Vanadium Oxide (V2O5) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$602.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected.

Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Cobalt Iron Boron (Co-Fe-B) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$602.00

Product 

Cobalt Iron Boron (Co-Fe-B) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~135.943 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

 ~0.986 g/cm³ (per SAM data; unusually low for metal alloys — consider verifying)

Product Codes

NCZ-2276K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$603.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

Approx. 260–270 g/mol (depends on ratio)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2195K

Shape Memory Polymer NGM3520, Ether Type

Price range: $603.75 through $7,633.75
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Shape Memory Polymer (SMP) has myriad of advanced applications in different fields from daily life uses like textile to biomedicals. These applications include smart catheter, drug-delivery systems, biosensors, auto-repairing automobile parts, smart textile, self-healing materials, smart suture, artificial organs like muscles, and so on.

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.250”

$604.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$604.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel Oxide (NiO) Sputtering Targets, Purity: 99.995%, Size:1”, Thickness: 0.125”

$604.00

Product 

Nickel Oxide (NiO) Sputtering Targets, Purity: 99.995%, Size:1'', Thickness: 0.125''

CAS No.

1313-99-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~3–5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

74.69 g/mol

Melting Point

1,950 °C

Boiling Point

 2,730 °C

Density

 6.67 g/cm³

Product Codes

NCZ-1840K

Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$605.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

5mL Oleic Acid Coated Magnetic Fe3O4 Magnetic Polystyrene Nanoparticle Water Dispersion, 1mg/mL

$605.00
Product 5mL Oleic Acid Coated Magnetic Fe3O4 Magnetic Polystyrene Nanoparticle Water Dispersion, 1mg/mL
CAS No. 1317-61-9
Appearance Brown to black colloidal
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Fe3O4
Molecular Weight 231.54 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.2 g/cm³
Product Codes NCZ-191I

High Purity (>95 wt%) Amino Single-walled Carbon Nanotube (Floating Catalyst Method), 1g

Price range: $605.00 through $671.00
Select options This product has multiple variants. The options may be chosen on the product page
Product High Purity (>95 wt%) Amino Single-walled Carbon Nanotube (Floating Catalyst Method), 1g
CAS No. 308068-56-6
Appearance Black to dark gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–2 nm (Size Can be customized),  Ask for other available size range.
Ingredient (C)x–(NH₂)y
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 0.03–0.1 g/cm³
Product Codes NCZ-384I
 

High Purity 99.9% Lithium Nitride (Li3N) for Solid State Lithium Batteries, -50 Mesh

Price range: $605.00 through $2,316.00
Select options This product has multiple variants. The options may be chosen on the product page
Product High Purity 99.9% Lithium Nitride (Li3N) for Solid State Lithium Batteries, -50 Mesh
CAS No. 26134-62-3
Appearance Reddish to purplish
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 300µm (Size Can be customized),  Ask for other available size range.
Ingredient Li₃N
Molecular Weight 34.83 g/mol
Melting Point 813 °C
Boiling Point N/A
Density 1.27 g/cm³
Product Codes NCZ-399I

Zinc (Zn) powder, -40 mesh, 99.999%

Price range: $605.00 through $943.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Zinc (Zn) powder, -40 mesh, 99.999%
CAS No. 7440-66-6
Appearance Shiny, grayish metallic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Zn
Molecular Weight 65.38 g/mol
Melting Point N/A
Boiling Point N/A
Density 7.14 g/cm³
Product Codes NCZ-607I

Titanium Boride (TiB2) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$606.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Molybdenum Oxide (MoO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$607.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Yttrium (Y) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$607.00

Product 

Yttrium (Y) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

7440-65-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

88.91 g/mol

Melting Point

1522 °C

Boiling Point

3338 °C

Density

4.47 g/cm³

Product Codes

NCZ-1519K

Neodymium Nitrate Hexahydrate (Nd(NO3)3 · 6H2O) 99.5% 2N5

$607.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Neodymium Nitrate Hexahydrate (Nd(NO3)3 · 6H2O) 99.5% 2N5
CAS No. 10361-12-7
Appearance Colorless to pale pink crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–10µm (Size Can be customized),  Ask for other available size range.
Ingredient Nd(NO3)3·6H2O
Molecular Weight 438.24 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.3 g/cm³
Product Codes NCZ-473I

Chromium Oxide (Cr2O3) Sputtering Targets, Purity: 99.8%-99.9%, Size: 3”, Thickness: 0.125”

$607.00

Product 

Chromium Oxide (Cr2O3) Sputtering Targets, Purity: 99.8%-99.9%, Size: 3'', Thickness: 0.125''

CAS No.

1308-38-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 151.99 g/mol

Melting Point

2,435 °C

Boiling Point

 ~3,000 °C (approximate; may decompose before boiling)

Density

5.21 g/cm³

Product Codes

NCZ-2302K

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 5”, Thickness: 0.125”

$608.00

Product 

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 5'', Thickness: 0.125''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

 ~3.58 g/cm³

Product Codes

NCZ-1968K

Copper (Cu) Sputtering Targets, Purity: 99.999%, Size: 7”, Thickness: 0.250”

$609.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Yttrium (Y) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$610.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”, Grey to Black

$610.00

Product 

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125'', Grey to Black

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

~4.23 g/cm³

Product Codes

NCZ-1433K

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$611.00

Product 

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

1314‑62‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

181.88 g/mol

Melting Point

690 °C

Boiling Point

~1750 °C

Density

~3.35 g/cm³

Product Codes

NCZ-1537K

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$611.00

Product 

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1627K

Bismuth Ferrite (BiFeO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$613.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

One of the most promising multiferroic materials is bismuth ferrite, an inorganic chemical compound with a perovskite structure and the chemical formula BiFeO3. In order to create a one-phase material called bismuth ferrite (BiFeO3), a bismuth ferrite sputtering target is often manufactured by high temperature sinttering or recrystallizing the mixture of the oxide compound of Bi and Fe. For targets that are sputtering bismuth ferrite, indium bonding is advised.

Nickel Oxide (NiO) Sputtering Targets, Purity: 99.995%, Size:1”, Thickness: 0.250”

$613.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$613.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Sulfide (ZnS) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$613.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$613.00

Product 

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

123273‑09‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~313.9 g/mol

Melting Point

 ~1,550 °C (approximate; ceramic decomposition likely above)

Boiling Point

N/A

Density

 ~5.3 g/cm³ @ room temp

Product Codes

NCZ-2156K

Antimony (Sb) Sputtering Targets, elastomer, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$613.00

Product 

Antimony (Sb) Sputtering Targets, elastomer, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

 7440-36-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 121.76 g/mol

Melting Point

 630.6 °C

Boiling Point

 1587 °C

Density

 6.69 g/cm³

Product Codes

NCZ-2502K

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$614.00

Product 

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.

 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

233.19 g/mol

Melting Point

~1625 °C

Boiling Point

N/A

Density

 ~6.02 g/cm³

Product Codes

NCZ-2465K

Cadmium Selenide Quantum Dots (CdSe/ZnS QD) 545 nm

Price range: $615.00 through $1,589.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS CdSe QDs have several uses because of their photoluminescence and electroluminescence capabilities. using CdSe quantum dots in;
  • Bioimaging,
  • Light Emitting Diodes (LEDs),
  • Solar Cell,
  • Sensors,
  • Single-electron transistors,
  • Display devices.

TEMPO hydrolyzed CNC

$615.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

TEMPO hydrolyzed CNC

CAS No.

No unique CAS – classified under Cellulose (CAS: 9004-34-6)

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

~5–15 nm diameter, 100–300 nm length(Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Not fixed – polymer; repeat unit: 162.14 g/mol (before modification)

Melting Point

N/A

Boiling Point

N/A

Density

~1.5–1.6 g/cm³

Product Codes

NCZ-2597K

Sulfuric acid hydrolyzed CNC

$615.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Sulfuric acid hydrolyzed CNC

CAS No.

 Not specific; generally falls under Cellulose (CAS: 9004‑34‑6)

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 Rod‑like: ~6–55 nm diameter, ~100–800 nm length depending on source (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Not fixed – polymer; repeat unit: 162.14 g/mol (before modification)

Melting Point

N/A

Boiling Point

N/A

Density

~1.5 g/cm³ (typical for cellulose-based nanomaterials) (approximate)

Product Codes

NCZ-2598K

Cellulose nanocrystal(CNC) (353567) TEMPO hydrolyzed CNC

$615.00
Select options This product has multiple variants. The options may be chosen on the product page
Cellulose nanocrystal(CNC) (353567) TEMPO hydrolyzed CNC
TEMPO hydrolyzed CNC Grade Length (nm) Diameter (nm) Appearance Concentration (w/w %) Price($)
TO-CNC-PL200 150-200 <10 Powder >92 615/10g
Product Codes- NCZ-2650K

Cellulose nanocrystal(CNC) (353567) Sulfuric acid hydrolyzed CNC

$615.00
Select options This product has multiple variants. The options may be chosen on the product page
Cellulose nanocrystal(CNC) (353567) Sulfuric acid hydrolyzed CNC
Sulfuric acid hydrolyzed CNC Grade Length (nm) Diameter (nm) Appearance Concentration (w/w %) Price($)
SF-CNC-PL200 150-200 <10 Powder >92 620/10g
Product Codes- NCZ-2651K

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$616.00

Product 

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

12031‑12‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

LaMnO₃ (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

241.84 g/mol¹

Melting Point

N/A

Boiling Point

N/A

Density

~6.4 g/cm³

Product Codes

NCZ-1398K

Graphdiyne Powder, 10mg

$616.00
Product Graphdiyne Powder, 10mg
CAS No. 154702-15-5
Appearance Black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 40–100 nm (Size Can be customized),  Ask for other available size range.
Ingredient 1.9 to 2.1 g/cm³
Molecular Weight (C₈H₂)ₙ
Melting Point N/A
Boiling Point N/A
Density 1.9 to 2.1 g/cm³
Product Codes NCZ-360I