Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$660.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$764.00

Product 

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

• Indium Oxide (In₂O₃): 1312-43-2 • Tin Oxide (SnO₂): 18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Approx. 292.6 g/mol (based on 90:10 wt% In₂O₃:SnO₂ blend)

Melting Point

 ~1,800 °C (sintered ceramic composite; no sharp melting point)

Boiling Point

N/A

Density

 ~7.15 g/cm³

Product Codes

NCZ-2205K

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$667.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$772.00

Product 

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.125''

CAS No.

• Indium Oxide (In₂O₃): 1312-43-2 • Tin Oxide (SnO₂): 18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Approx. 292.6 g/mol (based on 90:10 wt% In₂O₃:SnO₂ blend)

Melting Point

 ~1,800 °C (sintered ceramic composite; no sharp melting point)

Boiling Point

N/A

Density

 ~7.15 g/cm³

Product Codes

NCZ-2204K

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$1,225.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for invest1,225igation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$1,423.00

Product 

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''

CAS No.

• Indium Oxide (In₂O₃): 1312-43-2 • Tin Oxide (SnO₂): 18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Approx. 292.6 g/mol (based on 90:10 wt% In₂O₃:SnO₂ blend)

Melting Point

 ~1,800 °C (sintered ceramic composite; no sharp melting point)

Boiling Point

N/A

Density

 ~7.15 g/cm³

Product Codes

NCZ-2203K

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$1,350.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”

$1,569.00

Product 

Indium Tin Oxide/ITO (In203:Sn02) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.250''

CAS No.

• Indium Oxide (In₂O₃): 1312-43-2 • Tin Oxide (SnO₂): 18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Approx. 292.6 g/mol (based on 90:10 wt% In₂O₃:SnO₂ blend)

Melting Point

 ~1,800 °C (sintered ceramic composite; no sharp melting point)

Boiling Point

N/A

Density

 ~7.15 g/cm³

Product Codes

NCZ-2202K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$634.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$734.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

90% In₂O₃ (277.64 g/mol), 10% ZnO (81.38 g/mol) → ~260–270 g/mol (estimated)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2194K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$950.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$1,102.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

90% In₂O₃ (277.64 g/mol), 10% ZnO (81.38 g/mol) → ~260–270 g/mol (estimated)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2193K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$252.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$288.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.125''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

Approx. 260–270 g/mol (depends on ratio)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2201K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$267.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Even very low quantities of contaminants can be detected with the aid of the sputtering target, allowing for the determination of the target material's composition.

Applications for sputtering targets are also found in space. One type of space weathering is sputtering, which modifies the chemical and physical characteristics of airless worlds like the Moon and asteroids.

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$306.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

Approx. 260–270 g/mol (depends on ratio)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2200K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$357.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$411.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

Approx. 260–270 g/mol (depends on ratio)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2199K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$408.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$470.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

Approx. 260–270 g/mol (depends on ratio)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2198K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$579.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

Approx. 260–270 g/mol (depends on ratio)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2197K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$549.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$635.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

Approx. 260–270 g/mol (depends on ratio)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2196K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$522.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$603.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

Indium oxide (In₂O₃): 1312-43-2
Zinc oxide (ZnO): 1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

Approx. 260–270 g/mol (depends on ratio)

Melting Point

Indium oxide: ~1910 °C Zinc oxide: ~1975 °C

Boiling Point

N/A

Density

~7.1 g/cm³

Product Codes

NCZ-2195K

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$576.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$668.00

Product 

Indium Zinc Oxide/IZO (InZnO) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

117944‑65‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

InZnO (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~140.8 g/mol

Melting Point

~1900–1920 °C

Boiling Point

N/A

Density

 ~6.0–6.1 g/cm³

Product Codes

NCZ-1408K

Indium(III) Oxide (In2O3) Nanopowder, 50nm, ≥99.99% (4N) Purity

Price range: $446.00 through $908.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Indium(III) Oxide (In2O3) Nanopowder, 50nm, ≥99.99% (4N) Purity
CAS No. 1312-43-2
Appearance Yellowish-white or pale tan
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 50nm (Size Can be customized),  Ask for other available size range.
Ingredient In2O3
Molecular Weight 277.64 g/mol
Melting Point N/A
Boiling Point N/A
Density 7.18 g/cm³
Product Codes NCZ-430I

Industrial Grade Graphene (97%, <10nm)

Price range: $175.00 through $945.00
Select options This product has multiple variants. The options may be chosen on the product page
$175/5g $415/25g $945/100g
Product Industrial Grade Graphene (97%, <10nm)
CAS No. 7782-42-5
Appearance Dark grey to black powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10nm (Size Can be customized),  Ask for other available size range.
Ingredient N/A
Molecular Weight N/A
Melting Point 3697 °C
Boiling Point 4830 °C
Density 2.267 g/cm³
Product Codes NCZ-105G
 

Industrial Grade Graphene Oxides (97%, <2nm, diameter: 3~10um)

$545.00
Select options This product has multiple variants. The options may be chosen on the product page
$115/g $545/5g
Product Industrial Grade Graphene Oxides (97%, <2nm, diameter: 3~10um)
CAS No. 7782-42-5
Appearance Black powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 3-10um (Size Can be customized),  Ask for other available size range.
Ingredient (CₓOyHz)
Molecular Weight 1106.96 g/mol
Melting Point N/A
Boiling Point N/A
Density 1.36 g/cm³
Product Codes NCZ-118G

Industrial Grade Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 48-78 nm

Price range: $55.00 through $349.00
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Applications:

Multi Walled Carbon Nanotubes have a wide range of possible uses in several industries. These applications span a variety of fields, including energy, chemistry, mechanics, and electric-electronics. Drug delivery, biosensors, CNT composites, catalysis, nanoprobes, and hydrogen storage are just a few applications for it. 7, lithium-ion batteries, eight gas discharge tubes nine flat-panel screens, ten supercapacitors, and eleven transistors a dozen solar cells, 14 templates, 13 photoluminescence

Industrial Grade Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 48-78 nm

Price range: $60.00 through $377.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Industrial Grade Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 48-78 nm

Price range: $59.00 through $376.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Industrial Grade Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 7-16 nm

Price range: $46.00 through $479.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Industrial Grade Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 7-16 nm

Price range: $47.00 through $493.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates  

Industrial Grade Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 8-28 nm

Price range: $43.00 through $436.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Industrial Grade Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 8-28 nm

Price range: $43.00 through $435.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Industrial Grade Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 8-28 nm

Price range: $40.00 through $400.00
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Applications:

Several Walled Carbon There are numerous possible uses for nanotubes in various industries. Medicine, mechanics, electric-electronics, chemistry, energy, and other fields are among these uses. It can be used in a variety of applications, including medication delivery, biosensors, CNT composites, catalysis, nanoprobes, and hydrogen storage. seven lithium batteries, tubes for 8 gas discharges, 11 transistors, 10 supercapacitors, and 9 flat-panel screens twelve solar cells templates, 13-photoluminescence, and 14

Industrial Grade Short Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 28-48 nm

Price range: $65.00 through $425.00
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Applications:

Multi Walled Carbon Nanotubes have a wide range of possible uses in several industries. These applications span a variety of fields, including energy, chemistry, mechanics, and electric-electronics. Drug delivery, biosensors, CNT composites, catalysis, nanoprobes, and hydrogen storage are just a few applications for it. 7, lithium-ion batteries, eight gas discharge tubes nine flat-panel screens, ten supercapacitors, and eleven transistors a dozen solar cells, 14 templates, 13 photoluminescence

Industrial Grade Short Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 28-48 nm

Price range: $71.00 through $460.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Industrial Grade Short Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 28-48 nm

Price range: $71.00 through $462.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Industrial Grade Short Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 28-48 nm

Price range: $71.00 through $461.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

InP-based QLED Quantum Dots 525 nm

Price range: $915.00 through $1,780.00
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APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

InP-based QLED Quantum Dots 625 nm

Price range: $915.00 through $1,780.00
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APPLICATIONS
  • Televisions
  • Monitors
  • Smartphones

Iridium (Ir) Nanopowder, 20-30nm, ≥99.99% (4N) Purity, 1g

$926.00
Product Iridium (Ir) Nanopowder, 20-30nm, ≥99.99% (4N) Purity, 1g
CAS No. 7439-88-5
Appearance Gray to black metallic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20-30nm (Size Can be customized),  Ask for other available size range.
Ingredient Ir
Molecular Weight 192.22 g/mol
Melting Point N/A
Boiling Point N/A
Density 22.56 g/cm³
Product Codes NCZ-431I
 

Iridium ACAC

Price range: $115.00 through $577.00
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Product Iridium ACAC
CAS No. 15635-87-7
Appearance Yellow-orange / orange-yellow crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Ir(O₂C₅H₇)₃)
Molecular Weight 489.5 g/mol
Melting Point 269–271 °C
Boiling Point N/A
Density N/A
Product Codes NCZ-277R

Iron (Fe) Micron Powder, Purity: 99.99 %, Size: 100 mesh

Price range: $31.00 through $281.00
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25 grams/28 € 100 grams/65 € 500 grams/176 € 1000 grams/250 €
Please contact us for quotes on larger quantities !!!

Iron (Fe) Micron Powder

Purity: 99.99 %, Size: 100 mesh

Technical Properties:

PURITY

99.99 %

PARTICLE SIZE

100 mesh

CAS

7439-89-6

DENSITY

7.87 g/cm³

BOILING POINT

3000 °C

MELTING POINT

1536 °C

COEFF. OF EXPANSION @ 20ºC

12.6 x 10⁻⁶

BRINNELL HARDNESS

82 – 100

ELECTRIC RESISTIVITY

9.71 microhm-cm

CRYSTAL STRUCTURE

Cubic, Body Centered

FORM  

Powder

APPLICATIONS

Fillers Plastics Polymers

                                                           

Iron (Fe) Micron Powder, Purity: 99.99 %, Size: 325 mesh

Price range: $20.00 through $219.00
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25 grams/18 € 100 grams/48 € 500 grams/128 € 1000 grams/195 €
Please contact us for quotes on larger quantities !!!

Iron (Fe) Micron Powder

Purity: 99.99 %, Size: 325 mesh

Iron (Fe) Micron Powder, Purity: 99.99 %, Size: 5 µm

Price range: $38.00 through $218.00
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25 grams/34 € 100 grams/65 € 500 grams/146 € 1000 grams/194 € Please contact us for quotes on larger quantities !!!

Iron (Fe) Micron Powder

Purity: 99.99 %, Size: 5 µm

Technical Properties:

PURITY

99.99 %

PARTICLE SIZE

5 Micron

CAS

7439-89-6

DENSITY

7.87 g/cm³

BOILING POINT

3000 °C

MELTING POINT

1536 °C

COEFF. OF EXPANSION @ 20ºC

12.6 x 10⁻⁶

BRINNELL HARDNESS

82 – 100

ELECTRIC RESISTIVITY

9.71 microhm-cm

CRYSTAL STRUCTURE

Cubic, Body Centered

FORM  

Powder

APPLICATIONS

Fillers Plastics Polymers

   
            
             

Iron (Fe) Nanopowder/Nanoparticles, Purity: 99.55%, Size: 22 nm, Carbon Coated

Price range: $53.00 through $305.00
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Iron (Fe) Nanopowder/Nanoparticles

Purity: 99.55%, Size: 22 nm, Carbon Coated

Technical Properties:

Fe Purity (%) 99,55 (partially passivated by coating nanoparticles with 8,7wt% Carbon for only safe shipping)
Bulk Density (g/cm3) 0,15-0,30
True Density (g/cm3) 7,9
Color black
Crystal Structure cubic
Average Particle Size (nm) 22
Specific Surface Area (m2/g) 45,0-65,0
Elemental Analysis Fe Al Mn Ni Cr Others
99.55 0.12 0,09 0.009 0.006 0.004

Properties, Storage and Cautions:

Iron nanoparticles are highly reactive and flammable, therefore it should be handled with care and rapid moves, vibrations should be avoided. Nanopowder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, nanopowder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.

Iron (Fe) Nanopowder/Nanoparticles, Purity: 99.55%, Size: 22 nm, Partially Passivated

Price range: $37.00 through $237.00
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Iron (Fe) Nanopowder/Nanoparticles

Purity: 99.55%, Size: 22 nm, Partially Passivated

Technical Properties:

Fe Purity (%) 99,5 (partially passivated by coating nanoparticles with 0,9 wt% Oxygen for only safe shipping)
Bulk Density (g/cm3) 0,15-0,30
True Density (g/cm3) 7,9
Color black
Crystal Structure cubic
Average Particle Size (nm) 22
Specific Surface Area (m2/g) 45,0-65,0
Elemental Analysis Fe Al Mn Ni Cr Others
99.5 0.16 0,08 0.007 0.006 0.004

Properties, Storage and Cautions:

Iron nanoparticles are highly reactive and flammable, therefore it should be handled with care and rapid moves, vibrations should be avoided. Nanopowder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, nanopowder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.

Iron (Fe) Nanopowder/Nanoparticles, Purity: 99.55%, Size: 790 nm

Price range: $27.00 through $522.00
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Iron (Fe) Nanopowder/Nanoparticles

Purity: 99.55%, Size: 790 nm

Technical Properties:

True Density (g/cm3) 7,9
Color dark gray
Crystal Structure cubic
Tmelting (oC) 1538
Tboiling (oC) 2862
Average Particle Size (nm) 790
Elemental Analysis Fe Mn Ni Al Ca Others
99.5 0.13 0.12 0.09 0.05 0.02

Properties, Storage and Cautions:

Iron nanoparticles are highly reactive and flammable, therefore it should be handled with care and rapid moves, vibrations should be avoided. Nanopowder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, nanopowder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.

Iron (Fe) Nanopowder/Nanoparticles, Purity: 99.55+%, Size: 30-40 nm, Metal Basis

$175.00
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Iron (Fe) Nanopowder/Nanoparticles

Purity: 99.55+%, Size: 30-40 nm, Metal Basis

Technical Properties:

Bulk Density (g/cm3) 0,5
True Density (g/cm3) 7,9
Color black
Crystal Structure cubic
Average Particle Size (nm) 30-40
Specific Surface Area (m2/g) 10,0-15,0
Elemental Analysis Fe Mn Ni Al Ca Others
99.55 0.13 0.12 0.09 0.05 0.02

Properties, Storage and Cautions:

Iron nanoparticles are highly reactive and flammable, therefore it should be handled with care and rapid moves, vibrations should be avoided. Nanopowder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, nanopowder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.

Iron (Fe) Nanopowder/Nanoparticles, Purity: 99.55+%, Size: 60-70 nm, Metal Basis

$65.00
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Iron (Fe) Nanopowder/Nanoparticles

Purity: 99.55+%, Size: 60-70 nm, Metal Basis

Technical Properties:

Bulk Density (g/cm3) 0,4
True Density (g/cm3) 7,9
Color black
Crystal Structure cubic
Average Particle Size (nm) 60-70
Specific Surface Area (m2/g) 7,0-10,0
Elemental Analysis Fe Mn Ni Al Ca Others
99.55 0.13 0.12 0.09 0.05 0.02

Properties, Storage and Cautions:

Iron nanoparticles are highly reactive and flammable, therefore it should be handled with care and rapid moves, vibrations should be avoided. Nanopowder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, nanopowder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.

Applications:

Iron nanoparticles are known for their electrical and magnetic properties. With these properties iron nanopowder can be used in magnetic probes, magnetic data storage, vacuum seals, magnetic separators and contrast agents in MRI, hard metal degradation, transistor applications etc.  

Iron (Fe) Nanopowder/Nanoparticles, Purity: 99.55+%, Size: 90-100 nm, Metal Basis

$65.00
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Iron (Fe) Nanopowder/Nanoparticles

Purity 99.55+%, 90-100 nm, Metal Basis

Technical Properties:

Bulk Density (g/cm3) 0,7
True Density (g/cm3) 7,9
Color black
Crystal Structure cubic
Average Particle Size (nm) 90-100
Specific Surface Area (m2/g) 4,5-7,0
Elemental Analysis Fe Mn Ni Al Ca Others
99.55 0.13 0.12 0.09 0.05 0.02

Properties, Storage and Cautions:

Iron nanoparticles are highly reactive and flammable, therefore it should be handled with care and rapid moves, vibrations should be avoided. Nanopowder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, nanopowder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.

Iron (Fe) Sputtering Target

Price range: $155.00 through $486.00
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Product 

Iron (Fe) Sputtering Target

CAS No.

7439-88-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

192.22 g/mol

Melting Point

2,446 °C

Boiling Point

4,428 °C

Density

22.56 g/cm³

Product Codes

NCZ-1358K

Iron (Fe) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$104.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Iron (Fe) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$116.00

Product 

Iron (Fe) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

 7439-89-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 55.85 g/mol

Melting Point

 1538 °C

Boiling Point

 2862 °C

Density

 7.87 g/cm³

Product Codes

NCZ-2189K

Iron (Fe) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$138.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Iron (Fe) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$155.00

Product 

Iron (Fe) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

 7439-89-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 55.85 g/mol

Melting Point

 1538 °C

Boiling Point

 2862 °C

Density

 7.87 g/cm³

Product Codes

NCZ-2186K