Titanium Dioxide (TiO2) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2”, Thickness: 0.125”, Grey to Black

$594.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.250”

$594.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Aluminum Tab for Pouch Li-ion Cell, Width: 4 mm, Length: 57 mm

Price range: $160.00 through $594.00
Select options This product has multiple variants. The options may be chosen on the product page
100 pcs/128 € 250 pcs/265 € 500 pcs/475 €  Please contact us for quotes on larger quantities !!! 

Aluminum Tab for Pouch Li-ion Cell

Width: 4 mm, Length: 57 mm

Technical Properties:

Purity Aluminum 99.99%
Length 57 mm
Width 4 mm
Thickness 0.10 mm
Max. Loading Current 3A
Net Weight 60 mg/pcs

Applications:

4 mm Width Aluminum Tab as Positive Terminal for Pouch Li-ion Cell    

Iron Oxide Nanoparticles / Nanopowder (Fe2O3) alpha, 99%, 20~40nm

Price range: $88.00 through $593.00
Select options This product has multiple variants. The options may be chosen on the product page
$88/100g
$252/500g
$593/1000g

Product 

Iron Oxide Nanoparticles / Nanopowder (Fe2O3) alpha, 99%, 20~40nm

CAS No.

1309-37-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

20~40nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

159.69 g/mol

Melting Point

~1,565 °C

Boiling Point

Decomposes

Density

 ~5.24 g/cm³

Product Codes

NCZ-1134K

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

$593.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

$593.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$592.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Manganese (Mn) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.250”

$592.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$592.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$590.00

Product 

Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 4'', Thickness: 0.125''

CAS No.

 10043-11-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

24.82 g/mol

Melting Point

~2973 °C

Boiling Point

N/A

Density

~2.1 g/cm³

Product Codes

NCZ-2369K

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$590.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Nitride (Si3N4) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”, White to Gray

$590.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Prime CZ-Si Wafer, Size: 2”, Orientation: (111), Phosphor Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 280 ± 15 μm

Price range: $50.00 through $590.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime CZ-Si Wafer Size: 2”, Orientation: (111), Phosphor Doped, 1-Side Polished Technical Properties: Quality Prime Materials CZ-Si Size (inch) 2”

99.99% 4N Purity Gallium Indium Tin Eutectic for Electrode Contact Application, 100g

$589.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99.99% 4N Purity Gallium Indium Tin Eutectic for Electrode Contact Application, 100g
CAS No. 8049-11-4
Appearance Shiny, silvery
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–50μm (Size Can be customized),  Ask for other available size range.
Ingredient Ga-In-Sn
Molecular Weight 191.48 g/mol
Melting Point 710°C
Boiling Point N/A
Density 6.44–6.50 g/cm³
Product Codes NCZ-246I
 

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

$589.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

$589.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Tantalum Oxide (Ta2O5) Sputtering Target

Price range: $162.00 through $588.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tantalum Oxide (Ta2O5) Sputtering Target

CAS No.

13463-67-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.87 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

 ~4.23 g/cm³

Product Codes

NCZ-1326K

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”, Beige to White

$588.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$587.00

Product 

Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

101.96 g/mol

Melting Point

~2,072 °C

Boiling Point

~2,977 °C

Density

~3.97–3.98 g/cm³

Product Codes

NCZ-2539K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$587.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes ~3652 °C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2341K

Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

$587.00

Product 

Tungsten (W) Sputtering Targets, Purity: 99.95%, Size: 4'', Thickness: 0.250''

CAS No.

7440-33-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 183.84 g/mol

Melting Point

3422 °C

Boiling Point

 5555 °C

Density

19.25 g/cm³

Product Codes

NCZ-1588K

Ytterbium Oxide (Yb2O3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$587.00

Product 

Ytterbium Oxide (Yb2O3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

1314-37-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

394.08 g/mol

Melting Point

2346 °C

Boiling Point

4127 °C

Density

 9.17 g/cm³

Product Codes

NCZ-1527K

Cobalt Iron Boron (Co-Fe-B) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$586.00

Product 

Cobalt Iron Boron (Co-Fe-B) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

N/A

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~135.943 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

0.986 g/cm³ (SAM — verify via COA due to low value)

Product Codes

NCZ-2277K

Lanthanum Strontium Manganate (La0.9Sr0.1MnO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$586.00

Product 

Lanthanum Strontium Manganate (La0.9Sr0.1MnO3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

AApprox. 68189‑52‑4 (generic for La₁₋ₓSrₓMnO₃ systems around x ≈ 0.1–0.3)

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 *~237.54 g/mol (La 138.91, Sr 87.62 ×0.1, Mn ≈ 54.94, O₃ = 48)

Melting Point

N/A

Boiling Point

N/A

Density

 *~6.4–6.5 g/cm³ (typical solid/sintered density in LSMO perovskites)

Product Codes

NCZ-2096K

Lithium Cobalt Oxide (LiCoO2) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$586.00

Product 

Lithium Cobalt Oxide (LiCoO2) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

12190‑79‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

97.87 g/mol

Melting Point

Decomposes at ~1,100–1,130 °C

Boiling Point

N/A

Density

~4.80–4.95 g/cm³

Product Codes

NCZ-2053K

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.9%, Size: 1”, Thickness: 0.125”, Grey to Black

$586.00

Product 

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.9%, Size: 1'', Thickness: 0.125'', Grey to Black

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

~4.23 g/cm³

Product Codes

NCZ-1426K

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$586.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$586.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$586.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Iron Oxide (Fe2O3) Nanopowder/Nanoparticles, Alpha, High Purity: 99.6+%, Size: 28 nm

Price range: $37.00 through $586.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/33 € 25 grams/54 € 100 grams/108 € 500 grams/287 € 1000 grams/516 €
Please contact us for quotes on larger quantities !!!

Iron Oxide (Fe2O3) Nanopowder/Nanoparticles

Alpha, High Purity: 99.6+%, Size: 28 nm

Technical Properties:

Purity (%) 99.6+
Color red brown
Average Particle Size (nm) 28
Morphology spherical
Specific Surface Area (m2/g) >55
True Density (g/cm3) 5,4
Elemental Analysis (%) Ca Co K Mn Ni Zn
0.007 0.004 0.03 0.16 0.002 0.001

Applications:

Iron oxide nanoparticles are widely used as a composite material in plastics, rubber, alloys, and wear-resistant materials. It is applied for coatings and anti-corrosion. It is also used in lithium batteries, and lithium iron phosphate batteries.

Iron Oxide (Fe2O3) Nanopowder/Nanoparticles, Gamma, High Purity: 99.55+%, Size: 18 nm

Price range: $37.00 through $586.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/33 € 25 grams/54 € 100 grams/108 € 500 grams/287 € 1000 grams/516 €
Please contact us for quotes on larger quantities !!!

Iron Oxide (Fe2O3) Nanopowder/Nanoparticles

Gamma, High Purity: 99.55+%, Size: 18 nm

Technical Properties:

Purity (%) 99.55+
Color red brown
Average Particle Size (nm) 18
Morphology spherical
Specific Surface Area (m2/g) >75
Elemental Analysis (%) Ca Co K Mn Ni Zn
0.007 0.004 0.03 0.16 0.002 0.001

Applications:

Iron oxide nanoparticles are widely used as a composite material in plastics, rubber, alloys, and wear-resistant materials. It is applied for coatings and anti-corrosion. It is also used in lithium batteries, and lithium iron phosphate batteries.

Zinc Oxide (ZnO) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$585.00

Product 

Zinc Oxide (ZnO) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

1314‑13‑2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

ZnO (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

81.38 g/mol

Melting Point

~1975 °C

Boiling Point

~2360 °C

Density

 ~5.61 g/cm³

Product Codes

NCZ-1453K

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”, Grey to Black

$585.00

Product 

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250'', Grey to Black

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

~4.23 g/cm³

Product Codes

NCZ-1435K

Copper Sputtering Target Cu

Price range: $288.00 through $585.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Copper Sputtering Target Cu
CAS No. 7440-50-8
Appearance Solid, reddish-orange metallic luster
Purity ≥99%,  ≥99.9%,  ≥95% (Other purities are also available)
APS N/A
Ingredient Cu
Molecular Weight 63.55 g/mol
Melting Point 1083.0 °C
Boiling Point 2567.0 °C
Density 8.96 g/cm³
Product Codes NCZ-113H

Bismuth Nanopowder/ Nanoparticles ( Bi, 99.9%, 100nm)

Price range: $193.00 through $585.00
Select options This product has multiple variants. The options may be chosen on the product page
$193/25g $585/100g

Product 

Bismuth Nanopowder/ Nanoparticles ( Bi, 99.9%, 100nm)

CAS No.

7440-69-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

100nm (Size Can be customized), Ask for other available size ranges.

Ingredient

AlN

Molecular Weight

208.98 g/mol

Melting Point

~271.4 °C

Boiling Point

1,564 °C

Density

~9.78 g/cm³

Product Codes

NCZ-1021K

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

$585.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$585.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$585.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$585.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$585.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound barium zirconate has the formula BaZrO3. An electroceramic, or family of ceramic materials principally employed for their electrical capabilities, is what barium zirconate is. In semiconductor, chemical vapor deposition (CVD), physical vapor deposition (PVD), and optical applications, barium zirconate sputtering targets can be employed. Barium zirconate sputtering targets can also be employed for ferroelectric applications.

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$585.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound barium zirconate has the formula BaZrO3. An electroceramic, or family of ceramic materials principally employed for their electrical capabilities, is what barium zirconate is. You can utilize barium zirconate sputtering target in physical semiconductor deposition (CVD) and optics and vapor deposition (PVD) display applications. Barium zirconate sputtering targets can also be employed for ferroelectric applications.

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$585.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical formula for antimony telluride, an inorganic molecule, is Sb2Te3. It has a layered structure and is a grey crystalline solid. Weak van der Waals forces hold the layers together. They are made up of three atomic sheets of tellurium and two atomic sheets of antimony.

Iron Oxide (Fe3O4) Nanopowder/Nanoparticles, High Purity: 99.55+%, Size: 14-29 nm

Price range: $37.00 through $585.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/33 € 25 grams/55 € 100 grams/125 € 500 grams/295 € 1000 grams/515 €
Please contact us for quotes on larger quantities !!!

Iron Oxide (Fe3O4) Nanopowder/Nanoparticles

High Purity: 99.55+%, Size: 14-29 nm

Technical Properties:

Purity (%) 99.55+
Color black
Average Particle Size (nm) 14-29
Morphology spherical
Specific Surface Area (m2/g) >80
Bulk Density (g/cm3) 0,9
True Density (g/cm3) 5,1
Elemental Analysis (%) Na Cr Co Mn Ni Al
0.0055 0.0002 0.0035 0.004 0.0016 0.0005

Applications:

Iron oxide nanoparticles show excellent magnetic properties. It is used as a composite for making ferrofluid, and electro magnetorheological fluid. It is applied in magnetic refrigeration, magnetically controlled transport of anti-cancer drugs, magnetic refrigeration, magnetic cell separation, and magnetic coatings. It also has applications in electronic devices such as, magneto-optical devices, semiconductors, microwave devices, magnetic detectors, and laser printers.

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$584.00

Product 

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

25583-20-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

61.88 g/mol

Melting Point

 ~2950 °C

Boiling Point

~4300 °C

Density

5.22 g/cm³

Product Codes

NCZ-1604K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$584.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Multilayer Vanadium Nitride (V2N) MXene Material, 1g

$583.00
Product Multilayer Vanadium Nitride (V2N) MXene Material, 1g
CAS No. 12169-08-3
Appearance Dark gray to black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 2–20 μm ( (Size Can be customized),  Ask for other available size range.
Ingredient V2N
Molecular Weight 115 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-468I
 

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.125”

$583.00

Product 

Praseodymium (Pr) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.125''

CAS No.

7440-10-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 140.91 g/mol

Melting Point

931 °C

Boiling Point

 3520 °C

Density

 6.77 g/cm³

Product Codes

NCZ-1787K

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

$583.00

Product 

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.250''

CAS No.

 12138-09-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

247.97 g/mol

Melting Point

~1,250 °C

Boiling Point

N/A

Density

~7.5 g/cm³

Product Codes

NCZ-1577K

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$583.00

Product 

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

CAS No.

1314‑62‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

181.88 g/mol

Melting Point

690 °C

Boiling Point

~1750 °C

Density

~3.35 g/cm³

Product Codes

NCZ-1538K

3N (99.9%) Yttrium Fluoride (YF3) Pieces (3-12mm) Evaporation Materials

Price range: $352.00 through $583.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 3N (99.9%) Yttrium Fluoride (YF3) Pieces (3-12mm) Evaporation Materials
CAS No. 13709-49-4
Appearance White, Solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 3-12mm (Size Can be customized),  Ask for other available size range.
Ingredient YF3
Molecular Weight 145.90 g/mol
Melting Point 1,387 °C
Boiling Point N/A
Density 4.01 g/cm3
Product Codes NCZ-166E

Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$583.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.250”

$583.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$583.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$583.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$582.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes ~3652 °C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2339K

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$582.00

Product 

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

CAS No.

 12138-09-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

247.97 g/mol

Melting Point

~1,250 °C

Boiling Point

N/A

Density

~7.5 g/cm³

Product Codes

NCZ-1581K

Titanium Boride (TiB2) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$582.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Electrolyte Lithium Hexafluorophosphate (LiPF6) for Lithium-ion Battery Research Development, 1 Kg in Stainless Steel Container

$582.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/582 €  Please contact us for quotes on larger quantities !!! Electrolyte Lithium Hexafluorophosphate (LiPF6) for Lithium-ion Battery Research Development

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$581.00

Product 

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2390K

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$581.00

Product 

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.250''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2386K