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Molybdenum Disulfide (MoS2) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''
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Molybdenum Disulfide (MoS2) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$828.00
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Product 

 Molybdenum Disulfide (MoS2) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

 1317-33-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  160.07 g/mol

Melting Point

 ~1185 °C

Boiling Point

 ~4500 °C

Density

  ~5.06 g/cm³

Product Codes

NCZ-1907K
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Prime Si+SiO2 Wafer (wet), Size: 2”, Orientation: (111), Boron Doped, Resistivity: 1 -20 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

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Price range: $63.00 through $828.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/57 € 5 pieces/185 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 2”, Orientation: (111), Boron Doped, 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 2”
Orientation (111)
Coating 500 nm
Thickness (μm) 500 ± 25
Doping Boron
Resistivity (ohm.cm) 1-20
Polished Double  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 8-12 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm

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Price range: $63.00 through $828.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/57 € 5 pieces/185 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 8-12
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
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Prime CZ-Si Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 0,01-0,02 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm

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Price range: $64.00 through $828.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/58 € 5 pieces/190 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 3”, Orientation: (100), Boron Doped, 2-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 3”
Orientation (100)
Coating
Thickness (μm) 500 ± 25
Doping Boron
Resistivity (ohm.cm) 0,01-0,02
Polished Double Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted.
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Prime CZ-Si Wafer, Size: 2”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2-Side Polished, Thickness: 2000 ± 50 μm

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Price range: $63.00 through $828.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/57 € 5 pieces/185 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 2”, Orientation: (100), Boron Doped, 2-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 2”
Orientation (100)
Coating
Thickness (μm) 2000 ± 50
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
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Fullerene-C70, Purity: 96%

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Price range: $172.00 through $828.00
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  1 gram/154 € 5 grams/740 €                          
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Fullerene-C70

Purity: 96% 

Technical Properties:

Fullerene Compound Formula C70
Fullerene  Molecular Weight 840.77 g/mol
Fullerene  Purity 96%
Fullerene  Melting Point >280 °C
Fullerene  Appearance Black Powder
Fullerene  CAS 115383-22-7 

Applications:

1. Pharmaceutical: Diagnostic reagents, super drugs, cosmetics, nuclear magnetic resonance (NMR) with the developer. DNA affinity 2. Energy: Solar battery, fuel cell, secondary battery. 3. Industry: Wear resistant material, flame retardant materials, lubricants, polymer additives, high-performance membrane, catalyst, artificial diamond, hard alloy, electric viscous fluid, ink filters, high-performance coatings, fire retardant coatings, manufacturing bioactive materials , memory materials, embedded molecular and other characteristics, composite materials etc. 4. Information industry: Semiconductor record medium, magnetic materials, printing ink, toner, ink, paper special purposes. 5. Electronic parts: Superconducting semiconductor, diodes, transistors, inductor.  , 6. Optical materials, electronic camera, fluorescence display tube, nonlinear optical materials. 7. Environment: Gas adsorption, gas storage.  
Cobalt (Co) Sputtering Targets, Purity: 99.95%, Size: 6'', Thickness: 0.250''
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Cobalt (Co) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$827.00
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Product 

 Cobalt (Co) Sputtering Targets, Purity: 99.95%, Size: 6'', Thickness: 0.250''

CAS No.
7440‑48‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 58.93 g/mol (cobalt atomic weight)

Melting Point

 ~1,495 °C

Boiling Point

~2,870–2,927 °C

Density

 ~8.9 g/cm³

Product Codes

NCZ-2287K
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Graphene Oxide Dispersion, 8 mg/mL, in H2O

Price range: $43.00 through $827.00
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Graphene Oxide Dispersion

Purity: 99,5+%, 8 mg/mL, in H2O

Graphene Oxide (GO) is the oxidized form of graphene nanoplatelets. It can be reduced with various chemical or physical treatments. In many of the chemical exfoliation experiments graphene is synthesized by reducing graphene oxide which comes from chemically treated graphite powder. Graphene oxide is also an attractive material for electronics industry because of its semiconducting properties. Graphene oxide is generally hydrophilic and can be dispersed in water (as it is in this dispersion). The graphene oxide dispersions exhibited long-term stability and were made of sheets between a few hundred nanometers and a few micrometers large, similar to the case of graphene oxide dispersions in water. For applications requiring the highest uniformity in size and lowest prices, you can choose us to meet your needs.
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Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

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$826.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Graphene on Copper substrate (793508)
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Graphene on Quartz substrate (794508)

Price range: $307.00 through $825.00
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Graphene on Copper substrate (793508) Copper film parameter Purity：99.95% Thickness：50μm Graphene parameter and price
Substrate Layers Size Sheet Resistance(Ω/sq) Notes Price($/pc)
Cu monolayer 50mm×50mm 300-500 monolayer coverage ≥95% 307
monolayer 100mm×100mm 300-500 monolayer coverage ≥95% 463
monolayer 120mm×200mm 300-500 monolayer coverage ≥90% 775
multilayer 50mm×50mm 300-500 2-4 layers 357
multilayer 100mm×100mm 300-500 2-4 layers 513
multilayer 120mm×200mm 300-500 2-4 layers 825
Product Codes- NCZ-2587K
Vanadium Carbide (V2C) MXene Multilayer Flakes
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Vanadium Carbide (V2C) MXene Multilayer Flakes

$825.00
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Product Vanadium Carbide (V2C) MXene Multilayer Flakes
CAS No. 12179-42-9
Appearance Dark gray to black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100nm (Size Can be customized),  Ask for other available size range.
Ingredient V2C
Molecular Weight 108.9 g/mol
Melting Point N/A
Boiling Point N/A
Density 6.0 g/cm³
Product Codes NCZ-594I
 
Silicon Disulfide, SiS2, 99.999% 5N High Purity Powder
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Silicon Disulfide, SiS2, 99.999% 5N High Purity Powder

Price range: $319.00 through $825.00
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Product Silicon Disulfide, SiS2, 99.999% 5N High Purity Powder
CAS No. 13514-63-3
Appearance White to pale yellow
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10µm (Size Can be customized),  Ask for other available size range.
Ingredient SiS2
Molecular Weight 90.19 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-518I
 
Carboxymethyl Dextran Modified Fe3O4 Nanoparticle Water Dispersion, 4mg/mL
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Carboxymethyl Dextran Modified Fe3O4 Nanoparticle Water Dispersion, 4mg/mL

Price range: $429.00 through $825.00
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Product Carboxymethyl Dextran Modified Fe3O4 Nanoparticle Water Dispersion, 4mg/mL
CAS No. 1317-61-9
Appearance Brown to black aqueous
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10–30nm (Size Can be customized),  Ask for other available size range.
Ingredient Fe3O4​
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 5.2 g/cm³
Product Codes NCZ-310I
 
Titanium Aluminum Carbide (Ti3AlC2) MAX Phase Micron-Powder
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Titanium Aluminum Carbide (Ti3AlC2) MAX Phase Micron-Powder

Price range: $119.00 through $823.00
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Product Titanium Aluminum Carbide (Ti3AlC2) MAX Phase Micron-Powder
CAS No. 196506-01-1
Appearance Grey-black, flaky to granular
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS  8.6µm (Size Can be customized),  Ask for other available size range.
Ingredient Ti3AlC2
Molecular Weight 194.60 g/mol
Melting Point N/A
Boiling Point N/A
Density 4.2–4.3 g/cm³
Product Codes NCZ-571I
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Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.99%, Size: 1”, Thickness: 0.125”, Beige to White

, , ,
$823.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Chromium (Cr) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.125''
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Chromium (Cr) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

$821.00
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Product 

 Chromium (Cr) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.125''

CAS No.
7440‑47‑3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  51.9961 g/mol

Melting Point

  1,857 °C

Boiling Point

 2,672 °C

Density

  7.14 g/cm³

Product Codes

NCZ-2308K
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Prime FZ-Si Wafer, Size: 2”, Orientation: (100), Phosphor Doped, Resistivity: 7000 – 8000 (ohm.cm), 2-Side Polished, Thickness: 250 ± 15 μm

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Price range: $63.00 through $821.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/57 € 5 pieces/185 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 2”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 250 ± 15 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 2”
Orientation (100)
Coating
Thickness (μm) 250 ± 15
Doping Phosphor
Resistivity (ohm.cm) 7000 - 8000
Polished Double Side
                Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 300 nm

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Price range: $64.00 through $821.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/58 € 5 pieces/190 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 3”
Orientation (100)
Coating 300 nm
Thickness (μm) 380 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Short Single Walled Carbon Nanotubes, Purity: > 65%, SSA: 400 m2/g

Price range: $70.00 through $820.00
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Applications:

Single Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in drug delivery, biosensors, CNT composites, catalysis, nanoprobes, hydrogen storage, lithium batteries, gas-discharge tubes, flat panel displays, supercapacitors, transistors, solar cells, photoluminescence, templates.
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Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

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$818.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250'', Beige to White
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Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”, Beige to White

$817.00
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Product 

 Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250'', Beige to White

CAS No.

13463‑67‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

TiO₂ (black granules) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 79.94 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

 ~4.23 g/cm³

Product Codes

NCZ-1442K
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Lanthanum Strontium Manganate (La0.7Sr0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

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$817.00
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Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.
Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.125''
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Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 7”, Thickness: 0.125”

$816.00
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Product 

 Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 7'', Thickness: 0.125''

CAS No.

123273‑09‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  ~313.9 g/mol

Melting Point

 ~1,550 °C (approximate; ceramic decomposition likely above)

Boiling Point

N/A

Density

  ~5.3 g/cm³ @ room temp

Product Codes

NCZ-2146K
4N (99.99%) Aluminum Fluoride (AlF3) Pieces (1-10mm ) Evaporation Materials
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4N (99.99%) Aluminum Fluoride (AlF3) Pieces (1-10mm ) Evaporation Materials

$816.00
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Product 4N (99.99%) Aluminum Fluoride (AlF3) Pieces (1-10mm ) Evaporation Materials
CAS No. 7784-18-1
Appearance Colorless, White solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1-10mm (Size Can be customized),  Ask for other available size range.
Ingredient AlF3
Molecular Weight 83.98 g/mol
Melting Point 1290 °C
Boiling Point N/A
Density 3.1 g/cm³
Product Codes NCZ-140E
 
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Lithium Niobate (LiNbO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

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$816.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Hemicellulose(from Bamboo) (453510)
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Hemicellulose(from Bamboo) (453510)

$815.00
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Product 
Hemicellulose(from Bamboo) (453510)

CAS No.
No match for "453510"—no recognized CAS number for bamboo hemicellulose

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

  N/A(Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  BSH‑1: ~12.8 kDa; BSH‑2: ~11.3 kDa; Other methods: up to ~35–44 kDa

Melting Point

 N/A

Boiling Point

N/A

Density

 ~1.52 g/cm³ (experimental); ~1.45 g/cm³ (simulation)

Product Codes

NCZ-2653K
Microwave-Alkali extraction, Molecular weight 10000-20000g/mol, Ash ≤0.05%, Lignin ≤0.8%
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Microwave-Alkali extraction, Molecular weight 10000-20000g/mol, Ash ≤0.05%, Lignin ≤0.8%

$815.00
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Product 

 Microwave-Alkali extraction, Molecular weight 10000-20000g/mol, Ash ≤0.05%, Lignin ≤0.8%

CAS No.
 Generic for cellulose: 9004-34-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 ~10 – 50 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  8,000 – 20,000 g/mol

Melting Point

 N/A

Boiling Point

N/A

Density

 ~1.5 – 1.6 g/cm³

Product Codes

NCZ-2600K
Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.125''
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Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$815.00
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Product 

 Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.125''

CAS No.

 12070-08-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 59.89 g/mol

Melting Point

 ~3160 °C

Boiling Point

N/A

Density

 4.93 g/cm³

Product Codes

NCZ-1610K
Monocrystalline Silicon Nanoflakes (Si, 97%,
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Monocrystalline Silicon Nanoflakes (Si, 97%, <1um)

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Price range: $190.00 through $815.00
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$190/100 g
$815/500g

Product 

 Monocrystalline Silicon Nanoflakes (Si, 97%, <1um)

CAS No.
7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<1um (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

3,265 °C

Density

 ~2.33 g/cm³

Product Codes

NCZ-1069K
Monocrystalline Silicon Nanoparticles/ Nanopowder (Si, 99% 1um)
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Monocrystalline Silicon Nanoparticles/ Nanopowder (Si, 99% 1um)

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Price range: $190.00 through $815.00
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$190/100g
$815/500g

Product 

Monocrystalline Silicon Nanoparticles/ Nanopowder (Si, 99% 1um)

CAS No.
7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1um(Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

3,265 °C

Density

 ~2.33 g/cm³

Product Codes

NCZ-1067K
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Aluminum Nanoparticles/ Nanopowder (Al, 99.7% 40-60 nm)

Price range: $116.00 through $815.00
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$116/25g
$332/100g
$815/250g

Product 

Aluminum Nanoparticles/ Nanopowder (Al, 99.7% 40-60 nm)

CAS No.

24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

40-60 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

AlN

Molecular Weight

40.982 g/mol

Melting Point

2200 °C

Boiling Point

2517 °C

Density

3.3 g/cm³

Product Codes

NCZ-1010K
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Silver Ag nanopowder/ nanoparticles self-dispersing 15 nm 25%

Price range: $104.00 through $815.00
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$104/5g $345/25g $815/100g

Product 

Silver Ag nanopowder/ nanoparticles self-dispersing 15 nm 25%

CAS No.

24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

15 nm 25% (Size Can be customized), Ask for other available size ranges.

Ingredient

AlN

Molecular Weight

40.982 g/mol

Melting Point

2200 °C

Boiling Point

2517 °C

Density

3.3 g/cm³

Product Codes

NCZ-1008K
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Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

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$814.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When etching anisotropy is high, sputter etching is the preferred method.

is required, and selectivity is unimportant. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 4'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$812.00
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 Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1738K
Aluminum Oxide (Al2O3) Nanopowder
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Aluminum Oxide (Al2O3) Nanopowder/Nanoparticles Dispersion in 1, 2-Propanediol, Size: 12 nm, Gamma, 18 wt%

Price range: $50.00 through $812.00
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Aluminum Oxide (Al2O3) Nanopowder/Nanoparticles Dispersion in 1, 2-Propanediol

Size: 12 nm, Gamma, 18 wt%

Aluminum Oxide (Al2O3) Nanopowder
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Aluminum Oxide (Al2O3) Nanopowder/Nanoparticles Dispersion in Ethylene Glycol, Size: 12 nm, Gamma, 18 wt%

Price range: $50.00 through $812.00
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Aluminum Oxide (Al2O3) Nanopowder/Nanoparticles Dispersion in Ethylene Glycol

Size: 12 nm, Gamma, 18 wt%

Strontium Titanate (SrTiO3) Sputtering Target
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Strontium Titanate (SrTiO3) Sputtering Target

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Price range: $471.00 through $811.00
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 Strontium Titanate (SrTiO3) Sputtering Target

CAS No.

12060-59-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 183.49 g/mol

Melting Point

~2,080 °C

Boiling Point

N\A

Density

 ~5.12 g/cm³

Product Codes

NCZ-1324K
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Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2-Side Polished, Thickness: 525 ± 25 μm

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Prime CZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 2-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (100)
Coating  
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
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Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm

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1 piece/43 € 5 pieces/175 € 25 pieces/725 € Please contact us for quotes on larger quantities !!! 

Prime CZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
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Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm

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Price range: $48.00 through $811.00
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1 piece/43 € 5 pieces/175 € 25 pieces/725 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 1-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (100)
Coating  
Thickness (μm) 525 ± 25
Doping Phosphor
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
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Prime CZ-Si Wafer, Size: 4”, Orientation: (111), Phosphor Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm

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1 piece/42 € 5 pieces/170 € 25 pieces/725 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 4”, Orientation: (111), Phosphor Doped, 1-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (111)
Coating
Thickness (μm) 525 ± 25
Doping Phosphor
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
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Prime CZ-Si Wafer, Size: 3”, Orientation: (100), Phosphor Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 640 ± 25 μm

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Price range: $47.00 through $811.00
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1 piece/42 € 5 pieces/170 € 25 pieces/725 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 3”, Orientation: (100), Phosphor Doped, 1-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 3”
Orientation (100)
Coating
Thickness (μm) 640 ± 25
Doping Phosphor
Resistivity (ohm.cm) 1-10
Polished One Side
Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''
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Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$810.00
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Product 

 Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

12060-08-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 183.49 g/mol

Melting Point

 ~2080 °C

Boiling Point

N/A

Density

 ~5.12 g/cm³

Product Codes

NCZ-1682K
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Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

, , ,
$810.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

, , ,
$810.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Silicon (Si) Nanopowder/Nanoparticles, Purity: 97+%, Size: 25-35 nm, Laser Synthesized

, ,
Price range: $269.00 through $809.28
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Silicon (Si) Nanopowder/Nanoparticles Purity: 97+%, Size: 25-35 nm, Laser Synthesized Technical Properties: True Density (g/cm3) 2,3 Bulk Density (g/cm3) 0,1
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Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

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$809.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

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Quartz Wafer, (X-Cut), Size: 2”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $66.15 through $806.40
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Quartz Wafer (X-Cut), Size: 2”, 2-Side Polished, Thickness: 500 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch)
Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''
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Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$806.00
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Product 

 Aluminum Oxide (Al2O3) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.
 1344-28-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 101.96 g/mol

Melting Point

 ~2,072 °C

Boiling Point

~2,977 °C

Density

 ~3.97–3.98 g/cm³

Product Codes

NCZ-2538K
Lithium Phosphate (Li3PO4) Sputtering Targets, elastomer, Purity: 99.95%, Size: 3'', Thickness: 0.125''
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Lithium Phosphate (Li3PO4) Sputtering Targets, elastomer, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$805.00
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Product 

 Lithium Phosphate (Li3PO4) Sputtering Targets, elastomer, Purity: 99.95%, Size: 2'', Thickness: 0.125''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

N/A

Density

  ~2.53 g/cm³

Product Codes

NCZ-2018K
Gold (Au) Nanopowder, 20nm, ≥99.99% (4N) Purity, 1g
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Gold (Au) Nanopowder, 20nm, ≥99.99% (4N) Purity, 1g

$805.00
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Product Gold (Au) Nanopowder, 20nm, ≥99.99% (4N) Purity, 1g
CAS No. 7440-57-5
Appearance Brownish black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20nm(Size Can be customized),  Ask for other available size range.
Ingredient Au
Molecular Weight 196.97g/mol
Melting Point N/A
Boiling Point N/A
Density 19.3g/cm³
Product Codes NCZ-356I
 
Single Walled Nanotubes (SWNTs 90%, CNTs 95%)
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Single Walled Nanotubes (SWNTs 90%, CNTs 95%)

Price range: $206.00 through $805.00
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$206/1g
$805/5g

Product 

 Single Walled Nanotubes (SWNTs 90%, CNTs 95%)

CAS No.

7727-54-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

Diameter: ~1–2 nm, Length: ~5–30 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 228.20 g/mol

Melting Point

 ~120 °C

Boiling Point

N/A

Density

  1.98 g/cm³

Product Codes

NCZ-1229K
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Graphene Oxide Dispersion, 8 mg/mL, in H2O

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Price range: $41.00 through $805.00
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30 ml/38 € 60 ml/65 €                         120 ml/120 €                      500 ml/395 €                   1000 ml/730 € Please contact us for quotes on larger quantities !!!

Graphene Oxide Dispersion

Purity: 99,5+%, 8 mg/mL, in H2O

Graphene Oxide (GO) is the oxidized form of graphene nanoplatelets. It can be reduced with various chemical or physical treatments. In many of the chemical exfoliation experiments graphene is synthesized by reducing graphene oxide which comes from chemically treated graphite powder. Graphene oxide is also an attractive material for electronics industry because of its semiconducting properties. Graphene oxide is generally hydrophilic and can be dispersed in water (as it is in this dispersion). The graphene oxide dispersions exhibited long-term stability and were made of sheets between a few hundred nanometers and a few micrometers large, similar to the case of graphene oxide dispersions in water. For applications requiring the highest uniformity in size and lowest prices, you can choose us to meet your needs.

Technical Properties:

Graphene Oxide Purity (%) 99,5+
Graphene Thickness (nm) 0,4-1,1 (single layer)
Diameter (µm)  1-5 µm
Appearance Black Liquid
Concentration  (wt‰) 8 (can be easily diluted)- 8 mg/mL
SPECIFIC SURFACE AREA (m2/g) 800-1600
  graphene-oxide-nanografi.png TEM Image of NG01GO0501(Graphene Oxide Dispersion)

Applications:

  • Graphite oxide, formerly called graphitic oxide or graphitic acid, is a compound of carbon, oxygen, and hydrogen in variable ratios, obtained by treating graphite with strong oxidizers.
  • Graphene The maximally oxidized bulk product is a yellow solid with C:O ratio between 2.1 and 2.9, that retains the layer structure of graphite but with a much larger and irregular spacing.
  • Graphene The bulk material disperses in basic solutions to yield monomolecular sheets, known as graphene oxide by analogy to graphene, the single-layer form of graphite.
  • Graphene oxide sheets have been used to prepare strong paper-like materials, membranes, thin films, and composite materials.
  • Initially graphene oxide attracted substantial interest as a possible intermediate for the manufacture of graphene.
  • The graphene obtained by reduction of graphene oxide still has many chemical and structural defects which is a problem for some applications but an advantage for some others. 
Samarium (Sm) Sputtering Target
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Samarium (Sm) Sputtering Target

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Price range: $272.00 through $803.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

 Samarium (Sm) Sputtering Target

CAS No.

7440-19-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  150.36 g/mol

Melting Point

 1,072 °C

Boiling Point

 1,794 °C

Density

 7.54 g/cm³

Product Codes

NCZ-1302K
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Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

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$803.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''
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Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$802.00
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Product 

 Barium Titanate (BaTiO3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.
 12047‑27‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~233.19 g/mol

Melting Point

 ~1625 °C

Boiling Point

N/A

Density

  ~6.02 g/cm³

Product Codes

NCZ-2461K
Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''
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Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$802.00
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Product 

 Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.
12009‑21‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 276.55 g/mol

Melting Point

 N/A

Boiling Point

N/A

Density

 ~5.52 g/cm³ (theoretical)

Product Codes

NCZ-2446K
Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''
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Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$802.00
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Product 

 Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.
12009‑21‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 276.55 g/mol

Melting Point

 N/A

Boiling Point

N/A

Density

 ~5.52 g/cm³ (theoretical)

Product Codes

NCZ-2445K
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Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

, , ,
$802.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

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Manganese (Mn) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.125”

, ,
$802.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.