Tantalum Oxide (Ta2O5) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$999.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$1,156.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, indium, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1647K

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$577.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1650K

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$501.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$452.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1654K

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$393.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$393.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$470.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1653K

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$409.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$634.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1652K

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$550.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$855.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1651K

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$740.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$548.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$632.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1649K

Tantalum Sputtering Target Ta

Price range: $206.00 through $1,855.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Tantalum Sputtering Target Ta
CAS No. 7440-25-7
Appearance Gray Blue, Metallic
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Ta
Molecular Weight 180.94788 g/mol
Melting Point 3,017 °C
Boiling Point N/A
Density 16.6 g/cm3
Product Codes NCZ-141H
 

TC11 Powder

Product TC11 Powder
CAS No. N/A
Appearance Gray, spherical powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 15–53 µm (Size Can be customized),  Ask for other available size range.
Ingredient TiAlMoZrSi
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 2.1–2.4 g/cm³
Product Codes NCZ-175M

TC18 Powder

Product TC18 Powder
CAS No. N/A
Appearance Metallic gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 15–53 µm (Size Can be customized),  Ask for other available size range.
Ingredient Ti–Al–Mo–V–Cr–Fe
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 2.3–2.5 g/cm³
Product Codes NCZ-176M
 

TC4 ELI Powder

Product TC4 ELI Powder
CAS No. N/A
Appearance Metallic gray spherical powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 15–45 µm (Size Can be customized),  Ask for other available size range.
Ingredient Ti–6Al–4V
Molecular Weight N/A
Melting Point 1604 °C
Boiling Point N/A
Density 4.43 g/cm³
Product Codes NCZ-177M

TC4 Powder

Product TC4 Powder
CAS No. 13463-67-7
Appearance Grey or metallic silver powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10-100 µm (Size Can be customized),  Ask for other available size range.
Ingredient TiAlV​
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 4.43 g/cm³
Product Codes NCZ-135M

Teflon (PTFE) Sputtering Target, 99.9% Purity

Price range: $376.00 through $735.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Teflon (PTFE) Sputtering Target, 99.9% Purity
CAS No. 9002-84-0
Appearance Solid white, slightly opaque disk
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient (C₂F₄)ₙ
Molecular Weight 100.01 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.2 g/cm³
Product Codes NCZ-142H

Tellurium (Te) Micron Powder Purity: 99.95 %, Size: 325 mesh

Price range: $9.00 through $394.00
Select options This product has multiple variants. The options may be chosen on the product page
1 gram/8 € 5 grams/30 € 25 grams/98 € 100 grams/350 €

Tellurium (Te) Sputtering Target

Price range: $316.00 through $833.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tellurium (Te) Sputtering Target

CAS No.

13494-80-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 127.60 g/mol

Melting Point

449.5 °C

Boiling Point

 988 °C

Density

6.24 g/cm³

Product Codes

NCZ-1361K

TEMPO hydrolyzed CNC

$615.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

TEMPO hydrolyzed CNC

CAS No.

No unique CAS – classified under Cellulose (CAS: 9004-34-6)

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

~5–15 nm diameter, 100–300 nm length(Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 Not fixed – polymer; repeat unit: 162.14 g/mol (before modification)

Melting Point

N/A

Boiling Point

N/A

Density

~1.5–1.6 g/cm³

Product Codes

NCZ-2597K