T15 Powder

Product T15 Powder
CAS No. N/A
Appearance Gray to dark-gray, spherical powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 0.5–15 µm (Size Can be customized),  Ask for other available size range.
Ingredient Fe₇₀W₁₅Mo₄Cr₄V₃C₄
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 13.0–14.5 g/cm³
Product Codes NCZ-174M
 

Ta2AlC MAXene Powder Low Price

$0.00

Product Name: Ta2AlC MAXene Powder

Product Ta2AlC MAXene powder
Colour Black Powder
Purity ≥98 wt%
Ingredient Ta2AlC
Product Code NCZ-MX-225

Ta2AlC MAXene powder APPLICATION FIELDS

High-temperature coating, MXene precursor, conductive self-lubricating ceramic, lithium-ion battery, supercapacitor, electrochemical catalysis.

RELATED INFORMATION

Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com

Ta2C MXenes

$0.00

Product Name: Ta2C MXenes

Product Code: NCZ-MX-202
Product Ta2C MXenes
Colour Black Powder
Purity ≥98 wt%
Ingredient Ta2C
CAS NO 12316-56-2

APPLICATION FIELDS

High-temperature coating, Mxene precursor, conductive self-lubricating ceramic, lithium-ion battery, supercapacitor, electrochemical catalysis.

RELATED INFORMATION

Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com

Ta4AlC3 MAXene Powder

$0.00

Product Name: Ta4AlC3 MAXene Powder

Product Ta4AlC3 MAXene powder
Colour Black Powder
Purity ≥98 wt%
Ingredient Ta4AlC3
Product Code NCZ-MX-119

APPLICATION FIELDS

High-temperature coating, MXene precursor, conductive self-lubricating ceramic, lithium-ion battery, supercapacitor, electrochemical catalysis. RELATED INFORMATION Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com

Ta4C3 MXene Powder in Nano & Micro Size

$0.00

Product Name: Ta4C3 MXene Powder

Product Code: NCZ-MX-219
Product Ta4C3 MXene
Colour Black Powder
Purity ≥98 wt%
Ingredient Ta4C3
CAS NO 12316-56-2

APPLICATION FIELDS

High-temperature coating, Mxene precursor, conductive self-lubricating ceramic, lithium-ion battery, supercapacitor, electrochemical catalysis.

RELATED INFORMATION

Storage Conditions: Airtight sealed, avoid light and keep dry at room temperature. Please email us for the customization. Email: contact@nanochemazone.com

Tantalum (Ta) Nanopowder/Nanoparticles, High Purity: 99.995%, Size: 45-75 nm

Price range: $164.58 through $483.52
Select options This product has multiple variants. The options may be chosen on the product page
Tantalum (Ta) Nanopowder/Nanoparticles High Purity: 99.995%, Size: 45-75 nm Technical Properties: True Density (g/cm3) 16,7 Color black Shape spherical Tmelting (oC)

Tantalum (Ta) Sputtering Target

Price range: $137.00 through $904.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tantalum (Ta) Sputtering Target

CAS No.

7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3,017 °C

Boiling Point

5,458 °C

Density

16.69 g/cm³

Product Codes

NCZ-1305K

Tantalum (Ta) Sputtering Targets, elastomer, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$450.00

Product 

Tantalum (Ta) Sputtering Targets, elastomer, Purity: 99.95%, Size: 2'', Thickness: 0.125''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1656K

Tantalum (Ta) Sputtering Targets, elastomer, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$392.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, elastomer, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$776.00

Product 

Tantalum (Ta) Sputtering Targets, elastomer, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

180.95 g/mol

Melting Point

 3017 °C

Boiling Point

 5458 °C

Density

 16.65 g/cm³

Product Codes

NCZ-1655K

Tantalum (Ta) Sputtering Targets, elastomer, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$672.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.125”

$178.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.125”

$202.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 1'', Thickness: 0.125''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1667K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.250”

$205.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.250”

$233.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 1'', Thickness: 0.250''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1666K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$240.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.125”

$274.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 2'', Thickness: 0.125''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1665K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.250”

$255.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 2”, Thickness: 0.250”

$291.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 2'', Thickness: 0.250''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1664K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$453.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.125''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1663K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.250”

$690.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 3”, Thickness: 0.250”

$797.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 3'', Thickness: 0.250''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1662K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.125”

$720.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.125”

$832.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 4'', Thickness: 0.125''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1661K