Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

$732.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

$846.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 4'', Thickness: 0.250''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1660K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$902.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 6'', Thickness: 0.250''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1659K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$780.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

$936.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.125''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1658K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

$810.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

$971.00

Product 

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8'', Thickness: 0.250''

CAS No.

 7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3017 °C

Boiling Point

 5458 °C

Density

16.65 g/cm³

Product Codes

NCZ-1657K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

$840.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (V) ethoxide, 99.999%

Price range: $22.00 through $139.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Tantalum (V) ethoxide, 99.999%
CAS No. 6074-84-6
Appearance Colorless liquid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient SrO
Molecular Weight 406.25 g/mol
Melting Point 155 °C
Boiling Point N/A
Density 4.7 g/cm³
Product Codes NCZ-181R
 

Tantalum (V) methoxide, 99.999%

Price range: $16.00 through $109.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Tantalum (V) methoxide, 99.999%
CAS No. 865-35-0
Appearance White crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Ta(OCH₃)₅
Molecular Weight N/A
Melting Point 49–51 °C
Boiling Point N/A
Density N/A
Product Codes NCZ-182R

Tantalum (V) Oxide (Ta2O5) 99.9% 3N Powder

Price range: $249.00 through $1,476.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Tantalum (V) Oxide (Ta2O5) 99.9% 3N Powder
CAS No. 1314-61-0
Appearance White to off-white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–10µm (Size Can be customized),  Ask for other available size range.
Ingredient Ta2O5
Molecular Weight 441.89 g/mol
Melting Point N/A
Boiling Point N/A
Density 8.2 g/cm³
Product Codes NCZ-548I

Tantalum Aluminum Carbide (Ta4AlC3) MAX Phase Micron-Powder

Price range: $171.00 through $645.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Tantalum Aluminum Carbide (Ta4AlC3) MAX Phase Micron-Powder
CAS No. N/A
Appearance Dark gray to black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–5µm (Size Can be customized),  Ask for other available size range.
Ingredient Ta4AlC3
Molecular Weight 654.48 g/mol
Melting Point N/A
Boiling Point N/A
Density 10.3 g/cm³
Product Codes NCZ-549I
 

Tantalum Carbide (Ta4C3Tx) MXene Multilayer Nanoflakes, 1g

$784.00
Product Tantalum Carbide (Ta4C3Tx) MXene Multilayer Nanoflakes, 1g
CAS No. N/A
Appearance Dark gray to black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–2μm (Size Can be customized),  Ask for other available size range.
Ingredient Ta₄C₃Tₓ
Molecular Weight 651.6 g/mol
Melting Point N/A
Boiling Point N/A
Density 3.5–5.0 g/cm³
Product Codes NCZ-550I

Tantalum Carbide (TaC) Nanopowder/Nanoparticles, Purity: 99.5+%, Size: 950 nm, Cubic

Price range: $35.00 through $601.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/31 € 
25 grams/51 € 100 grams/92 €
500 grams/306 € 1000 grams/530 €
                     
Please contact us for quotes on larger quantities !!! 

Tantalum Carbide (TaC) Nanopowder/Nanoparticles

Purity: 99.5+%, Size: 950 nm, Cubic

Applications:

Tantalum carbide nanoparticles has application in hard materials such as refractory ceramic materials. It is used in cutting tools and tool bits. It is also used as additive to tungsten carbide alloys.  

Tantalum Carbide (TaC) Powder (99%)

Price range: $1,304.00 through $37,198.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Tantalum Carbide (TaC) Powder (99%)
CAS No. 12070-06-3
Appearance Gray to black crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–10µm (Size Can be customized),  Ask for other available size range.
Ingredient TaC
Molecular Weight 192.96 g/mol
Melting Point 3880 °C
Boiling Point N/A
Density 3.5–5.0 g/cm³
Product Codes NCZ-551I
 

Tantalum Carbide Nanopowder/ Nanoparticles ( TaC, 99.5%, <2um)

Price range: $155.00 through $845.00
Select options This product has multiple variants. The options may be chosen on the product page
$155/100g
$475/500g
$845/1kg

Product 

Tantalum Carbide Nanopowder/ Nanoparticles ( TaC, 99.5%, <2um)

CAS No.

12070-06-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<2 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

192.96 g/mol

Melting Point

~3,768–3,880 °C

Boiling Point

~4,780–5,470 °C

Density

~14.3–14.7 g/cm³

Product Codes

NCZ-1193K

Tantalum Disilicide Ta5Si3

$0.00

Tantalum Disilicide Nanoparticles

Tantalum Disilicide Powder Ta5Si3
MF Ta5Si3
Chemical Name Tantalum Silicide
Purity ≥ 99%
APS 50-100 nm, 1 to 5 um, 10 um, 325 Mesh  (Size Customization possible)
Form Gray Powder
Product Number NCZ3247-20
CAS Number 12067-56-0

Note: We supply different products of microparticles and Nanoparticles powder in all sizes range according to the client’s requirements.

Tantalum Disilicide is a kind of dark grey powder with cubic crystal. Ta5Si3 is mainly used in areas like heating element, integrated circuit, high-temperature oxidation resistant coating, high-temperature structural materials, and aviation and spaceflight, etc. The tantalum disilicide compound by our company based on new techniques is featured with high purity, even size distribution, large specific area, high surface activity, and low apparent density, etc.

Tantalum Nanoparticles/ Nanopowder ( Ta, 99.7% 60-80 nm)

Price range: $398.00 through $1,287.00
Select options This product has multiple variants. The options may be chosen on the product page
$398/25g
$1287/100g

Product 

Tantalum Nanoparticles/ Nanopowder ( Ta, 99.7% 60-80 nm)

CAS No.

7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

60-80 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

180.95 g/mol

Melting Point

3,017 °C

Boiling Point

5,458 °C

Density

16.69 g/cm³

Product Codes

NCZ-1076K

Tantalum Nitride (TaN) Sputtering Target

Price range: $622.00 through $1,375.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tantalum Nitride (TaN) Sputtering Target

CAS No.

12033-62-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 194.96 g/mol

Melting Point

~3,090 °C

Boiling Point

 ~5,000 °C

Density

~14.3 g/cm³

Product Codes

NCZ-1334K

Tantalum Nitride Nanoparticles

$0.00

Nano Tantalum Nitride Powder

Tantalum Nitride Nanoparticles

Tantalum Nitride Nanopowder

FORM POWDER
Molecular Weight 194.95 g/mol
APS 80-100 nm
Density 14.30 g/ml
Melting Point 3000-3200˚C
Molecular Formula TaN
Crystal Structure Cubic
Free carbon 0.07%
Specific Gravity 16.3 g/cc
Appearance and Odor Black to grey powder, no odor
Solubility in H2O Insoluble
CAS 12033-62-4
Note: We supply different products of microparticles and Nanoparticles powder in all size range according to client’s requirements.

Tantalum Oxide (Ta2O5) Sputtering Target

Price range: $375.00 through $1,007.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tantalum Oxide (Ta2O5) Sputtering Target

CAS No.

 1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

441.89 g/mol

Melting Point

~1,875 °C

Boiling Point

~3,000 °C

Density

~8.2 g/cm³

Product Codes

NCZ-1325K

Tantalum Oxide (Ta2O5) Sputtering Target

Price range: $162.00 through $588.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tantalum Oxide (Ta2O5) Sputtering Target

CAS No.

13463-67-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.87 g/mol

Melting Point

~1,843 °C

Boiling Point

~2,972 °C

Density

 ~4.23 g/cm³

Product Codes

NCZ-1326K

Tantalum Oxide (Ta2O5) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$668.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum Oxide (Ta2O5) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$771.00

Product 

Tantalum Oxide (Ta2O5) Sputtering Targets, indium, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 441.89 g/mol

Melting Point

 ~1872 °C

Boiling Point

N/A

Density

~8.2 g/cm³

Product Codes

NCZ-1648K