Carbon (C) (Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$224.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$255.00

Product 

Carbon (C) (Graphite) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

 7782‑42‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

12.01 g/mol

Melting Point

~3,652 °C (no liquid phase)

Boiling Point

 ~4,200 °C

Density

 ~2.25 g/cm³

Product Codes

NCZ-2349K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$584.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$673.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

 Sublimes around 3,600°C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2336K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$803.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$927.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes at ~3,600 °C (does not melt under normal pressure)

Boiling Point

 Sublimes directly without boiling phase at ~3,600 °C+

Density

~2.2 g/cm³ (varies with crystallinity and orientation)

Product Codes

NCZ-2335K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.125′

$179.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$202.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.125''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes ~3652 °C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2344K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$199.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$226.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes ~3652 °C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2343K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$307.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$351.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes ~3652 °C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2342K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$510.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$587.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes ~3652 °C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2341K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$403.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes ~3652 °C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2340K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$506.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$582.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes ~3652 °C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2339K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$427.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$490.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes ~3652 °C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2338K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$585.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$674.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes at ~3652 °C (does not melt under normal pressure)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2337K

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$388.00

Product 

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 1'', Thickness: 0.125''

CAS No.

 7782‑42‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

12.01 g/mol

Melting Point

Sublimates at ~3,652 °C

Boiling Point

Sublimates at ~4,200 °C

Density

 ~2.25 g/cm³

Product Codes

NCZ-2348K

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$355.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$407.00

Product 

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

 7782‑42‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

12.01 g/mol

Melting Point

Sublimates at ~3,652 °C

Boiling Point

Sublimates at ~4,200 °C

Density

 ~2.25 g/cm³

Product Codes

NCZ-2347K

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$601.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$693.00

Product 

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

 7782‑42‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

12.01 g/mol

Melting Point

Sublimates at ~3,652 °C

Boiling Point

Sublimates at ~4,200 °C

Density

 ~2.25 g/cm³

Product Codes

NCZ-2346K

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$674.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$777.00

Product 

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

 7782‑42‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

12.01 g/mol

Melting Point

Sublimates at ~3,652 °C

Boiling Point

Sublimates at ~4,200 °C

Density

 ~2.25 g/cm³

Product Codes

NCZ-2345K

Cerium (Ce) Sputtering Target

Price range: $284.00 through $762.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Cerium (Ce) Sputtering Target

CAS No.

7440-45-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

140.12 g/mol

Melting Point

798 °C

Boiling Point

3,426 °C

Density

6.77 g/cm³

Product Codes

NCZ-1350K

Cerium Oxide (CeO2) Sputtering Target

Price range: $511.00 through $1,492.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Cerium Oxide (CeO2) Sputtering Target

CAS No.

1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

172.11 g/mol

Melting Point

~2,400 °C

Boiling Point

~3,500 °C

Density

~7.22 g/cm³

Product Codes

NCZ-1315K

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$982.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$1,138.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 1'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2318K

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$751.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$869.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2317K

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$1,570.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2316K

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$1,638.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$1,902.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, indium, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2315K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$826.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$954.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2334K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$647.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$746.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2333K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$934.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2331K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$909.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2332K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$979.00

Applications of Sputtering Targets;

For film deposition, sputtering targets are employed. Using a "target" source to erode material onto a "substrate" like a silicon wafer, sputter targets are a technique for depositing thin layers. Targets are etched using semiconductor sputtering targets. When etching anisotropy is required to a great degree and selectivity is not an issue, sputter etching is the method of choice. By etching away the target material, sputter targets are also utilized for investigation. In one instance, the target sample is sputtered at a steady pace in secondary ion spectroscopy (SIMS). Using mass spectrometry, the concentration and identity of the spewed atoms are determined when the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$1,132.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2330K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$1,478.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2329K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$1,255.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$1,452.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2328K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$1,374.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2327K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.125”

$1,284.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 5'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2326K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.250”

$1,180.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 5”, Thickness: 0.250”

$1,365.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 5'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2325K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$1,300.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.125”

$1,504.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2324K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”

$1,562.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 6'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2323K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 7”, Thickness: 0.125”

$1,568.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 7'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2322K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 7”, Thickness: 0.250”

$1,380.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 7”, Thickness: 0.250”

$1,597.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 7'', Thickness: 0.250''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2321K

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.125”

$1,450.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The most prevalent rare-earth element in the crust of the earth is cerium, a metal that belongs to the lanthanide series. Cerium oxide's high refractive index and dielectric constant make it suitable for a wide range of optical and electrical applications. Additionally, cerium oxide can be used for corrosion protection coatings rather than coatings based on chromate.

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.125”

$1,683.00

Product 

Cerium Oxide (CeO2) Sputtering Targets, Purity: 99.99%, Size: 8'', Thickness: 0.125''

CAS No.

 1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 172.11 g/mol

Melting Point

2,400–2,600 °C

Boiling Point

Sublimes above 3,000 °C

Density

 7.13 g/cm³

Product Codes

NCZ-2319K