Copper (Cu) Sputtering Targets, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$500.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Copper (Cu) Sputtering Targets, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$500.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Copper (Cu) Sputtering Targets, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$577.00

Product 

Copper (Cu) Sputtering Targets, Purity: 99.999%, Size: 8'', Thickness: 0.250''

CAS No.

7440-50-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

63.55 g/mol

Melting Point

1,084 °C

Boiling Point

 2,562 °C

Density

8.96 g/cm³

Product Codes

NCZ-2253K

Copper Oxide (CuO) Sputtering Target

Price range: $206.00 through $596.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Copper Oxide (CuO) Sputtering Target

CAS No.

1317-38-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

79.55 g/mol

Melting Point

1,320 °C

Boiling Point

Decomposes (~2,000 °C+)

Density

6.31 g/cm³

Product Codes

NCZ-1369K

Dysprosium (Dy) Sputtering Target

Price range: $510.00 through $1,249.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Dysprosium (Dy) Sputtering Target

CAS No.

 7429-91-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

162.5 g/mol

Melting Point

1,407 °C

Boiling Point

2,567 °C

Density

8.55 g/cm³

Product Codes

NCZ-1353K

Erbium (Er) Sputtering Target

Price range: $284.00 through $762.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Erbium (Er) Sputtering Target

CAS No.

 7429-91-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

162.5 g/mol

Melting Point

1,407 °C

Boiling Point

2,567 °C

Density

8.55 g/cm³

Product Codes

NCZ-1354K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$150.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Erbium oxide with a chemical formula of Er2Ois an oxide of erbium metal. The applications of erbium oxide are varied due to their electrical, optical and photoluminescence properties. Nanoscale materials doped with Er+3 are of much interest because they have special particle-size-dependent optical and electrical properties. Erbium oxide doped nanoparticle materials can be dispersed in glass or plastic for display purposes, such as display monitors. The spectroscopy of Er+3 electronic transitions in host crystals lattices of nanoparticles combined with ultrasonically formed geometries in aqueous solution of carbon nanotubes is of great interest for synthesis of photoluminescence nanoparticles in ‘green’ chemistry. Erbium oxide is among the most important rare earth metals used in biomedicine. Erbium oxides are also used as gate dielectrics in semiconductor devices since it has a high dielectric constant (10-14) and a large band gap. Erbium is sometimes used as a coloring for glasses and erbium oxide can also be used as a burnable neutron poison for nuclear fuel. Erbium oxide films obtained by sputtering can be used for their photoluminescence effect.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$169.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.125''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2250K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$150.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$214.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Erbium oxide with a chemical formula of Er2Ois an oxide of erbium metal. The applications of erbium oxide are varied due to their electrical, optical and photoluminescence properties. Nanoscale materials doped with Er+3 are of much interest because they have special particle-size-dependent optical and electrical properties. Erbium oxide doped nanoparticle materials can be dispersed in glass or plastic for display purposes, such as display monitors. The spectroscopy of Er+3 electronic transitions in host crystals lattices of nanoparticles combined with ultrasonically formed geometries in aqueous solution of carbon nanotubes is of great interest for synthesis of photoluminescence nanoparticles in ‘green’ chemistry. Erbium oxide is among the most important rare earth metals used in biomedicine. Erbium oxides are also used as gate dielectrics in semiconductor devices since it has a high dielectric constant (10-14) and a large band gap. Erbium is sometimes used as a coloring for glasses and erbium oxide can also be used as a burnable neutron poison for nuclear fuel. Erbium oxide films obtained by sputtering can be used for their photoluminescence effect.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$244.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2249K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$214.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$251.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2247K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$220.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250” €220.00

$220.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Erbium oxide with a chemical formula of Er2Ois an oxide of erbium metal. The applications of erbium oxide are varied due to their electrical, optical and photoluminescence properties. Nanoscale materials doped with Er+3 are of much interest because they have special particle-size-dependent optical and electrical properties. Erbium oxide doped nanoparticle materials can be dispersed in glass or plastic for display purposes, such as display monitors. The spectroscopy of Er+3 electronic transitions in host crystals lattices of nanoparticles combined with ultrasonically formed geometries in aqueous solution of carbon nanotubes is of great interest for synthesis of photoluminescence nanoparticles in ‘green’ chemistry. Erbium oxide is among the most important rare earth metals used in biomedicine. Erbium oxides are also used as gate dielectrics in semiconductor devices since it has a high dielectric constant (10-14) and a large band gap. Erbium is sometimes used as a coloring for glasses and erbium oxide can also be used as a burnable neutron poison for nuclear fuel. Erbium oxide films obtained by sputtering can be used for their photoluminescence effect.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness:0.125”

$138.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Erbium oxide with a chemical formula of Er2Ois an oxide of erbium metal. The applications of erbium oxide are varied due to their electrical, optical and photoluminescence properties. Nanoscale materials doped with Er+3 are of much interest because they have special particle-size-dependent optical and electrical properties. Erbium oxide doped nanoparticle materials can be dispersed in glass or plastic for display purposes, such as display monitors. The spectroscopy of Er+3 electronic transitions in host crystals lattices of nanoparticles combined with ultrasonically formed geometries in aqueous solution of carbon nanotubes is of great interest for synthesis of photoluminescence nanoparticles in ‘green’ chemistry. Erbium oxide is among the most important rare earth metals used in biomedicine. Erbium oxides are also used as gate dielectrics in semiconductor devices since it has a high dielectric constant (10-14) and a large band gap. Erbium is sometimes used as a coloring for glasses and erbium oxide can also be used as a burnable neutron poison for nuclear fuel. Erbium oxide films obtained by sputtering can be used for their photoluminescence effect.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness:0.125”

$571.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness:0.125''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2248K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness:0.125”

$138.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$156.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Erbium oxide with a chemical formula of Er2Ois an oxide of erbium metal. The applications of erbium oxide are varied due to their electrical, optical and photoluminescence properties. Nanoscale materials doped with Er+3 are of much interest because they have special particle-size-dependent optical and electrical properties. Erbium oxide doped nanoparticle materials can be dispersed in glass or plastic for display purposes, such as display monitors. The spectroscopy of Er+3 electronic transitions in host crystals lattices of nanoparticles combined with ultrasonically formed geometries in aqueous solution of carbon nanotubes is of great interest for synthesis of photoluminescence nanoparticles in ‘green’ chemistry. Erbium oxide is among the most important rare earth metals used in biomedicine. Erbium oxides are also used as gate dielectrics in semiconductor devices since it has a high dielectric constant (10-14) and a large band gap. Erbium is sometimes used as a coloring for glasses and erbium oxide can also be used as a burnable neutron poison for nuclear fuel. Erbium oxide films obtained by sputtering can be used for their photoluminescence effect.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$176.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2246K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$156.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$186.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Erbium oxide with a chemical formula of Er2Ois an oxide of erbium metal. The applications of erbium oxide are varied due to their electrical, optical and photoluminescence properties. Nanoscale materials doped with Er+3 are of much interest because they have special particle-size-dependent optical and electrical properties. Erbium oxide doped nanoparticle materials can be dispersed in glass or plastic for display purposes, such as display monitors. The spectroscopy of Er+3 electronic transitions in host crystals lattices of nanoparticles combined with ultrasonically formed geometries in aqueous solution of carbon nanotubes is of great interest for synthesis of photoluminescence nanoparticles in ‘green’ chemistry. Erbium oxide is among the most important rare earth metals used in biomedicine. Erbium oxides are also used as gate dielectrics in semiconductor devices since it has a high dielectric constant (10-14) and a large band gap. Erbium is sometimes used as a coloring for glasses and erbium oxide can also be used as a burnable neutron poison for nuclear fuel. Erbium oxide films obtained by sputtering can be used for their photoluminescence effect.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$211.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2245K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$186.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$186.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$210.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Erbium oxide with a chemical formula of Er2Ois an oxide of erbium metal. The applications of erbium oxide are varied due to their electrical, optical and photoluminescence properties. Nanoscale materials doped with Er+3 are of much interest because they have special particle-size-dependent optical and electrical properties. Erbium oxide doped nanoparticle materials can be dispersed in glass or plastic for display purposes, such as display monitors. The spectroscopy of Er+3 electronic transitions in host crystals lattices of nanoparticles combined with ultrasonically formed geometries in aqueous solution of carbon nanotubes is of great interest for synthesis of photoluminescence nanoparticles in ‘green’ chemistry. Erbium oxide is among the most important rare earth metals used in biomedicine. Erbium oxides are also used as gate dielectrics in semiconductor devices since it has a high dielectric constant (10-14) and a large band gap. Erbium is sometimes used as a coloring for glasses and erbium oxide can also be used as a burnable neutron poison for nuclear fuel. Erbium oxide films obtained by sputtering can be used for their photoluminescence effect.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$239.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2244K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$210.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Erbium oxide is an oxide of erbium metal, having the chemical formula Er2O3.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$189.00
Select options This product has multiple variants. The options may be chosen on the product page
 

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Erbium oxide with a chemical formula of Er2Ois an oxide of erbium metal. The applications of erbium oxide are varied due to their electrical, optical and photoluminescence properties. Nanoscale materials doped with Er+3 are of much interest because they have special particle-size-dependent optical and electrical properties. Erbium oxide doped nanoparticle materials can be dispersed in glass or plastic for display purposes, such as display monitors. The spectroscopy of Er+3 electronic transitions in host crystals lattices of nanoparticles combined with ultrasonically formed geometries in aqueous solution of carbon nanotubes is of great interest for synthesis of photoluminescence nanoparticles in ‘green’ chemistry. Erbium oxide is among the most important rare earth metals used in biomedicine. Erbium oxides are also used as gate dielectrics in semiconductor devices since it has a high dielectric constant (10-14) and a large band gap. Erbium is sometimes used as a coloring for glasses and erbium oxide can also be used as a burnable neutron poison for nuclear fuel. Erbium oxide films obtained by sputtering can be used for their photoluminescence effect.

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$215.00

Product 

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.

12061-16-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

382.52 g/mol

Melting Point

~2,343 °C

Boiling Point

N/A

Density

~8.64 g/cm³

Product Codes

NCZ-2243K

Erbium Oxide (Er2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$189.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Europium (Eu) Sputtering Target

Price range: $515.00 through $1,814.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Europium (Eu) Sputtering Target

CAS No.

7440-53-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

151.964 g/mol

Melting Point

826 °C

Boiling Point

1,529 °C

Density

~5.24 g/cm³

Product Codes

NCZ-1288K

Europium Oxide (Eu2O3) Sputtering Target

Price range: $381.00 through $972.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Europium Oxide (Eu2O3) Sputtering Target

CAS No.

1308-96-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 351.93 g/mol

Melting Point

2,290 °C

Boiling Point

 ~4,000 °C (sublimes)

Density

7.42 g/cm³

Product Codes

NCZ-1369K

Gadolinium (Gd) Sputtering Target

Price range: $254.00 through $904.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Gadolinium (Gd) Sputtering Target

CAS No.

7440-54-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

157.25 g/mol

Melting Point

1,312 °C

Boiling Point

3,273 °C

Density

7.90 g/cm³

Product Codes

NCZ-1289K

Gadolinium Oxide (Gd2O3) Sputtering Target

Price range: $348.00 through $901.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Gadolinium Oxide (Gd2O3) Sputtering Target

CAS No.

12064-62-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

362.50 g/mol

Melting Point

 2,420 °C

Boiling Point

~4,000 °C

Density

7.41 g/cm³

Product Codes

NCZ-1371K

Germanium (Ge) Sputtering Target

Price range: $84.00 through $750.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Germanium (Ge) Sputtering Target

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

72.63 g/mol

Melting Point

937.4 °C

Boiling Point

2,830 °C

Density

 5.32 g/cm³

Product Codes

NCZ-1290K

Germanium (Ge) Sputtering Targets, indium, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$502.00

Product 

Germanium (Ge) Sputtering Targets, indium, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 72.63 g/mol

Melting Point

 938.3 °C

Boiling Point

2,833 °C

Density

 5.32 g/cm³

Product Codes

NCZ-2236K

Germanium (Ge) Sputtering Targets, indium, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$436.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Germanium (Ge) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$914.00

Product 

Germanium (Ge) Sputtering Targets, indium, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 72.63 g/mol

Melting Point

 938.3 °C

Boiling Point

2,833 °C

Density

 5.32 g/cm³

Product Codes

NCZ-2235K

Germanium (Ge) Sputtering Targets, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$156.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$155.00

Product 

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 72.63 g/mol

Melting Point

 938.3 °C

Boiling Point

2,833 °C

Density

 5.32 g/cm³

Product Codes

NCZ-2242K

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$138.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$180.00

Product 

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

7440‑56‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

Ge (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

72.63 g/mol

Melting Point

937.4 °C

Boiling Point

2,830 °C

Density

 ~5.32 g/cm³

Product Codes

NCZ-1399K

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$358.00

Product 

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 72.63 g/mol

Melting Point

 938.3 °C

Boiling Point

2,833 °C

Density

 5.32 g/cm³

Product Codes

NCZ-2241K

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$312.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$394.00

Product 

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 72.63 g/mol

Melting Point

 938.3 °C

Boiling Point

2,833 °C

Density

 5.32 g/cm³

Product Codes

NCZ-2240K

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.125”

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$502.00

Product 

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 72.63 g/mol

Melting Point

 938.3 °C

Boiling Point

2,833 °C

Density

 5.32 g/cm³

Product Codes

NCZ-2239K

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$436.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$503.00

Product 

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 72.63 g/mol

Melting Point

 938.3 °C

Boiling Point

2,833 °C

Density

 5.32 g/cm³

Product Codes

NCZ-2238K

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$525.00

Product 

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

7440-56-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 72.63 g/mol

Melting Point

 938.3 °C

Boiling Point

2,833 °C

Density

 5.32 g/cm³

Product Codes

NCZ-2237K

Germanium (Ge) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$436.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Graphite (C) Sputtering Target

Price range: $187.00 through $555.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Graphite (C) Sputtering Target

CAS No.

7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

12.01 g/mol

Melting Point

~3,642 °C

Boiling Point

N/A

Density

~2.26 g/cm³

Product Codes

NCZ-1356K

Hafnium (Hf) Sputtering Target

Price range: $440.00 through $2,850.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Hafnium (Hf) Sputtering Target

CAS No.

7440-58-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 178.49 g/mol

Melting Point

2,233 °C

Boiling Point

4,603 °C

Density

13.31 g/cm³

Product Codes

NCZ-1291K

Holmium (Ho) Sputtering Target

Price range: $428.00 through $1,020.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Holmium (Ho) Sputtering Target

CAS No.

7440-60-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

164.930 g/mol

Melting Point

1,474 °C

Boiling Point

2,700 °C

Density

8.80 g/cm³

Product Codes

NCZ-1292K

Indium (In) Sputtering Target

Price range: $139.00 through $787.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Indium (In) Sputtering Target

CAS No.

7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

114.82 g/mol

Melting Point

156.6 °C

Boiling Point

 2,072 °C

Density

7.31 g/cm³

Product Codes

NCZ-1293K

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$128.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$174.00

Product 

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.

 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

114.82 g/mol

Melting Point

 156.6 °C

Boiling Point

 2,072 °C

Density

 7.31 g/cm³

Product Codes

NCZ-2233K

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$154.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.