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Gallium Arsenide (GaAs) Wafers, Size: 4”, Thickness: 640±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N-type)

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Price range: $153.00 through $3,191.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/138€ 5 pieces/640€ 25 pieces/2875€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 4”, Single Side Polished, Thickness: 640± 25 μm, EPI-ready, Dopant: Silicon (N-type) Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  4”
Thickness (μm)  640± 25
Polished  Single Side
Dopant  Silicon (N-Type)
Orientation  (100) 2 deg off toward<111>A±0.5
Resistivity   (1.2-9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  32±1
IF Length  18±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready

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Price range: $672.00 through $3,168.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 100 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

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Price range: $672.00 through $3,168.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 111 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Silicon Carbide Wafer (SiC-6H) – 6H , Size: 2”, Thickness: 350 μm, Dummy Grade, Usable Area: 95%

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Price range: $712.00 through $3,153.00
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Silicon Carbide Wafer (SiC-6H) – 6H Size: 2”, Thickness: 350 μm, Usable Area: 95% Technical Properties: Quality  Dummy Grade Size (inch)  2”
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

Price range: $162.00 through $3,108.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Thickness: 350±25 μm, Single Side Polished Technical Properties: Quality  GaAs Materials  GaAs Size (inch)
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 100%

Price range: $654.00 through $2,982.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 100% Technical Properties: Quality  Mechanical Grade Size (inch)  4”
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, EPI-Ready

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Price range: $621.00 through $2,930.00
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1 piece/560 € 5 pieces/2640 €                          Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 100

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

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Price range: $621.00 through $2,930.00
Select options This product has multiple variants. The options may be chosen on the product page
  1 piece/560 € 5 pieces/2640 €                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 111

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
 
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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 111, Testing Grade

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Price range: $623.00 through $2,911.00
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1 piece/565 € 5 pieces/2640 €                          Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Single Side Polished, EPI-ready

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Price range: $149.00 through $2,875.00
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1 piece/135 € 5 pieces/635 € 25 pieces/2590 € Please contact us for quotes on larger quantities !!!

Gallium Arsenide (GaAs) Wafer

Size: 2”, Thickness: 350±25 μm, Single Side Polished

Technical Properties:

Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Single Side
Dopant  Silicon ( N type )
Orientation  (100)15 deg off toward ＜111＞A±0.5
Resistivity   (1.2—9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length   7±1

Fields of Application for Gallium Arsenide (GaAs)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs). Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels.
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

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Price range: $594.00 through $2,748.00
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Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness (μm)
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, EPI-Ready

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Price range: $594.00 through $2,748.00
Select options This product has multiple variants. The options may be chosen on the product page
Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 111 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness (μm)
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Indium Arsenide (InAs) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

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Price range: $601.00 through $2,746.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/545 € 5 pieces/2490 €                           Please contact us for quotes on larger quantities !!!

Indium Arsenide (InAs) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Zinc/Sulphur (Zn/S, N Type)
Orientation  100
Mobility  6000-20000
EPD  ≤50000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound. Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material. Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source. They can be supplied in n type, p type or semi insulating forms with different orientations. Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
  • Indium arsenide (InAs) wafer is used for infrared detectors.
  • Indium arsenide (InAs) wafer  is used for mil specs.
  • Indium arsenide (InAs) wafer  is used for foods.
  • Indium arsenide (InAs) wafer  is used for optical grades.
  • Diode lasers are also made using indium arsenide (InAs) wafer.
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 100%

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Price range: $601.00 through $2,740.00
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1 piece/545 € 5 pieces/2485 €                 Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Quality  Mechanical Grade
Size (inch)  4”
Thickness (μm)  350
Ra  ≤0.3
4H area  100%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤10
Bow  ≤10
Warp  ≤25
OF Length  32.5±2
IF Length  18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

Price range: $594.00 through $2,736.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality  Mechanical Grade Size (inch)  4”
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Production Grade, 4H Area: 1

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Price range: $623.00 through $2,734.00
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1 piece/565 € 5 pieces/2480 €                          Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 1

Technical Properties:

Quality  Production Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤0.3
4H area  1
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤10
Bow  ≤10
Warp  ≤25
OF Length  16±2
IF Length  8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
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Silicon Carbide Wafer (SiC-4H)- 4H , Size: 4”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

Price range: $582.00 through $2,712.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 4”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality  Dummy Grade Size (inch)  4”
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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, Testing Grade

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Price range: $623.00 through $2,611.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/565 € 5 pieces/2640 €                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

Price range: $561.00 through $2,577.00
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

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Price range: $549.00 through $2,542.00
Select options This product has multiple variants. The options may be chosen on the product page
  1 piece/495 € 5 pieces/2290 €                         Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium (N type)
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, EPI-Ready

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Price range: $549.00 through $2,542.00
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1 piece/495 € 5 pieces/2290 €                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 111

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
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Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

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Price range: $115.00 through $2,520.00
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Quartz Wafer (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm Technical Properties: Quality Prime Materials Quartz Size (inch)
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

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Price range: $545.00 through $2,514.00
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1 piece/495 € 5 pieces/2280 €               Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Quality  Mechanical Grade
Size (inch)  4”
Thickness (μm)  350
Ra  ≤1
4H area  80%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤25
Bow  ≤30
Warp  ≤45
OF Length  32.5±2
IF Length  18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

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Price range: $534.00 through $2,508.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 100 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

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Price range: $534.00 through $2,508.00
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Indium Phosphide (InP) Wafers Size: 3”, Thickness: 600±25 μm, Orientation: 111 Technical Properties: Size (inch)  3” Thickness (μm)  600± 25
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Silicon Carbide Wafer (SiC-4H)- 4H , Size: 4”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

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Price range: $534.00 through $2,492.00
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1 piece/485 € 5 pieces/2260 €               Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality  Dummy Grade
Size (inch)  4”
Thickness (μm)  350
Ra  ≤0.3
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤25
Warp  ≤35
OF Length  32.5±2
IF Length  18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

Price range: $554.00 through $2,476.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 3”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality  Testing Grade Size (inch)  3”
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Silicon Carbide Wafer (SiC-6H) – 6H , Size: 2”, Thickness: 350 μm, Dummy Grade, Usable Area: 95%

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Price range: $545.00 through $2,415.00
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1 piece/495 € 5 pieces/2190 €                           Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-6H) - 6H

Size: 2'', Thickness: 350 μm, Usable Area: 95%

Technical Properties:

Quality  Dummy Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤1
Usable Area  95%
Orientation  <0001>±0.5°
Resistivity   0.02 ~0.1 Ω·cm
TTV  ≤25
Bow  ≤30
Warp  ≤45
OF Length  15.9±1.7
IF Length  8±1.7

Fields of Application for Silicon Carbide (SiC-6H)- 6H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-6H) - 6H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Testing Grade, 4H Area: 80%

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Price range: $547.00 through $2,412.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 2” , Thickness: 350 μm, 4H Area: 80% Technical Properties: Quality  Testing Grade Size (inch)
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 450±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N Type)

Price range: $163.00 through $2,412.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Single Side Polished, Thickness: 450± 25 μm, EPI-ready, Dopant: Silicon (N Type) Technical Properties:
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Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

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Price range: $110.00 through $2,370.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm Technical Properties: Quality Prime
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 400±25 μm, Double Side Polished, EPI-ready

Price range: $153.00 through $2,370.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 400± 25 μm, EPI-ready  Technical Properties: Quality  GaAs Materials  GaAs
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Quartz Wafer, (X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

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Price range: $106.00 through $2,331.00
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1 piece/96 € 5 pieces/440 € 25 pieces/2100 €                       Please contact us for quotes on larger quantities !!! 

Quartz Wafer

(X-Cut), Size: 4”, 2-Side Polished, Thickness: 200 ± 25 μm

Technical Properties:

Quality Prime
Materials Quartz
Size (inch) 4”
Orientation (X-Cut)
Coating  
Thickness (μm) 200 ± 25
Doping  
Resistivity (ohm.cm)  
Polished Double Side
High working temperature, high corrosion resistivity, thermal conductivity and low dielectric loss are the specifications that make quartz wafers a good candidate for semiconductor, photomask, microwave filter and optical lense applications. Since quartz is a monocrystalline material with numerous different crystal orientations, it can be supplied in different cut versions. During this process high quality particles of quartz are positioned at the bottom of a vessel which is loaded with NaOH. Quartz starts to crystallize at around 400°C and between 1000 and 1500 bar pressure. This crystallization eventually creates monocrystals and may take even days. The generated quartz monocrystals are polished after being sliced into wafers and finally reveal Quartz 4”,(AT-Cut) Wafers. Quartz 4”,(X-Cut) has high thermal conductivity, high anti-corrosion, feature of high working temperature and good optical transmittance. For all these reasons Quartz Wafer is appropriate for the production of optical lenses, photomasks, microwave filters, semiconductors and for optical fiber applications.
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

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Price range: $494.00 through $2,320.00
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1 piece/445 € 5 pieces/2090 €                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 100

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
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Indium Phosphide (InP) Wafers, Size: 3”, Thickness: 600± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

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Price range: $494.00 through $2,320.00
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1 piece/445 € 5 pieces/2090 €                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600±25 μm, Orientation: 111

Technical Properties:

Size (inch)  3”
Thickness (μm)  600± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Double Side Polished, EPI-ready, Dopant: Zinc (P Type)

Price range: $151.00 through $2,250.00
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Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 350± 25 μm, EPI-ready, Dopant: Zinc (P Type) Technical Properties:
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Borosilicate Wafer, Size: 8”, 2-Side Polished, Thickness: 1250 ± 25 μm

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Price range: $121.00 through $2,238.00
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Borosilicate Wafer Size: 8”, 2- Side Polished, Thickness: 1250 ± 25 μm Technical Properties: Materials Borosilicate Size (inch) 8” Orientation
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, Testing Grade

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Price range: $475.00 through $2,196.00
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Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 100 Technical Properties: Quality  Testing Grade Size (inch)  2” Thickness
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, Testing Grade

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Price range: $475.00 through $2,196.00
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Gallium Antimonide (GaSb) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 111 Technical Properties: Quality  Testing Grade Size (inch)  2” Thickness
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 400±25 μm, Double Side Polished, EPI-ready

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Price range: $142.00 through $2,192.00
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1 piece/128€ 5 pieces/490€ 25 pieces/1975€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 400± 25 μm, EPI-ready  Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  400± 25
Polished  Double Side
Dopant  Undoped
Orientation  100
Resistivity   1 E8
Mobility  2000
EPD  ≤5000
Growth method  VGF
OF Length  17±1
IF Length  7±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.
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Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

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Price range: $101.00 through $2,178.00
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1 piece/92 € 5 pieces/420 € 25 pieces/1975 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 1000 nm
Thickness (μm) 380± 15
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 350±25 μm, Double Side Polished, EPI-ready, Dopant: Zinc (P Type)

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Price range: $139.00 through $2,081.00
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1 piece/126€ 5 pieces/480€ 25 pieces/1875€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 2”, Double Side Polished, Thickness: 350± 25 μm, EPI-ready, Dopant: Zinc (P Type) Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  350± 25
Polished  Double Side
Dopant  Zinc (P Type)
Orientation  (100) = 0 deg off toward <111A>
Resistivity  ( 1.2-9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length  7±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, Testing Grade

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Price range: $439.00 through $2,031.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/396 € 5 pieces/1830 €                           Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  Testing Grade
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  100
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
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Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 111, Testing Grade

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Price range: $439.00 through $2,031.00
Select options This product has multiple variants. The options may be chosen on the product page
  1 piece/396 € 5 pieces/1830 €                         Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 111

Technical Properties:

Quality  Testing Grade
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Tellurium ( N type )
Orientation  111
Mobility  2000-3500
EPD  ≤2000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.
  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Production Grade, 4H Area: 100%

Price range: $444.00 through $2,028.00
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Silicon Carbide Wafer (SiC-4H)-4H Size: 3”, Thickness: 350 μm, 4H Area: 100% Technical Properties: Quality  Production Grade Size (inch)  3” Thickness (μm)
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Silicon Carbide Wafer (SiC-4H)- 4H, Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 95%

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Price range: $456.00 through $2,010.00
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Silicon Carbide Wafer (SiC-4H) – 4H Size: 2”, Thickness: 350 μm, 4H Area: 95% Technical Properties: Quality Dummy Grade Size (inch)  2”
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

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Price range: $430.00 through $1,974.00
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1 piece/390 € 5 pieces/1790 €                         Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality  Dummy Grade
Size (inch)  3”
Thickness (μm)  350
Ra  ≤0.3
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤25
Warp  ≤35
OF Length  22.0±2.0
IF Length  11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H)- 4H wafer has superior electronic properties, silicon carbide (SiC-6H)– 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350±25 μm, Orientation: 100, Single Side Polished, EPI-Ready

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Price range: $432.00 through $1,968.00
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Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 100 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

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Price range: $432.00 through $1,968.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 111 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

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Price range: $414.00 through $1,968.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 100 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

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Price range: $414.00 through $1,968.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Phosphide (InP) Wafers Size: 2”, Thickness: 350±25 μm, Orientation: 111 Technical Properties: Size (inch)  2” Thickness (μm)  350± 25 Dopant
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

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Price range: $424.00 through $1,924.00
Select options This product has multiple variants. The options may be chosen on the product page
V 1 piece/385 € 5 pieces/1745 €            Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality  Testing Grade
Size (inch)  3”
Thickness (μm)  350
Ra  ≤0.3
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤25
Bow  ≤30
Warp  ≤35
OF Length  22.0±2.0
IF Length  11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Production Grade, 4H Area: 100%

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Price range: $408.00 through $1,863.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/370 € 5 pieces/1690 €                 Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Quality  Production Grade
Size (inch)  3”
Thickness (μm)  350
Ra  ≤0.3
4H area  100%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤10
Warp  ≤25
OF Length  22.0±2.0
IF Length  11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
 
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Gallium Arsenide (GaAs) Wafers, Size: 2”, Thickness: 450±25 μm, Single Side Polished, EPI-ready, Dopant: Silicon (N Type)

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Price range: $126.00 through $1,859.00
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1 piece/114€ 5 pieces/445€ 25 pieces/1675€ Please contact us for quotes on larger quantities ! Gallium Arsenide (GaAs) Wafer Size: 2”, Single Side Polished, Thickness: 450± 25 μm, EPI-ready, Dopant: Silicon (N Type) Technical Properties:
Quality  GaAs
Materials  GaAs
Size (inch)  2”
Thickness (μm)  450± 25
Polished  Single Side
Dopant  Silicon (N Type)
Orientation  (100) =2 deg off toward<111A>± 0.5
Resistivity  ( 1.2-9.9) E-3
Mobility  1000-3000
EPD  ≤3000
Growth method  VGF
OF Length  17±1
IF Length  7±1
Applications: Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. Vertical gradient freeze is the most common method to produce GaAs wafers. Mainly used for circuits, electronics and solar cell applications. Carbon, silicon, tellurium and zinc are some of the dopants that are used to modify the characteristics and electrical properties of gallium arsenide wafers. Wafer flatness and surface purity are ensured by highest quality standards. Boron concentration of gallium arsenide wafers highly depend on the production method. Gallium arsenide wafers with adequate electrical resistancy prevent high current induction in the circuit. Mobility of GaAs wafers can be tailored with different doping levels. Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic switching applications and at ultra-high radio frequencies. In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence. Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first known operational use of gallium arsenide (GaAs).
  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.
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Silicon Carbide Wafer (SiC-4H)- 4H, Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 95%

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Price range: $419.00 through $1,847.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/380 € 5 pieces/1675 €                           Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality Dummy Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤1
4H area  95%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤15
Bow  ≤25
Warp  ≤35
OF Length  16±2
IF Length  8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Testing Grade, 4H Area: 80%

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Price range: $419.00 through $1,847.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/380 € 5 pieces/1675 €                           Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'' , Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Quality  Testing Grade
Size (inch)  2”
Thickness (μm)  350
Ra  ≤1
4H area  80%
Orientation  4°±0.5°
Resistivity   0.015-0.03
TTV  ≤25
Bow  ≤30
Warp  ≤35
OF Length  16±2
IF Length  8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications.  The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices.  Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers.  They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection.  SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.
  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350±25 μm, Orientation: 100, Single Side Polished, EPI-Ready

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Price range: $399.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/360 € 5 pieces/1640 €                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, EPI-Ready

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Price range: $399.00 through $1,820.00
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1 piece/360 € 5 pieces/1640 €                          Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 111

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
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Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

, ,
Price range: $383.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/345 € 5 pieces/1640 €                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
Add to compare
Quick view
Add to wishlist

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 111, Single Side Polished, Testing Grade

, ,
Price range: $383.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/345 € 5 pieces/1640 € Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 111

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  111
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.