Aluminum Copper (Al/Cu) Sputtering Target

Price range: $150.00 through $515.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Aluminum Copper (Al/Cu) Sputtering Target

CAS No.

12004‑15‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

89.911 g/mol

Melting Point

~ 548 °C

Boiling Point

≈ 2,400 °C to 2,550 °C

Density

6.52 g/cm³

Product Codes

NCZ-1312K

Aluminum dihydrogen tripolyphosphate(AlH2P3O10·2H2O) (157885)

$545.00
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Aluminum dihydrogen tripolyphosphate(AlH2P3O10·2H2O) (157885)

 CAS  17375-35-8

Project Guaranteed Values Examination result
Color White White powder
The PH value 3-5 5
Moisture % ≤2 1.5
Residue on sieve( 45um)                ≤0.5% 0.4
P2O5   % 60-70 61.5
Al2O3  % 20-30 26
AS ≤100ppm 90
Cd ≤100ppm 20
Cr ≤100ppm 15
Hg ≤10ppm 0.0005
Pb ≤200ppm 80
Product Codes- NCZ-2590K

Aluminum doped Zinc Oxide (AZO) Nanopowder 99.9% (3N), 100g

$480.00
Product Aluminum doped Zinc Oxide (AZO) Nanopowder 99.9% (3N), 100g
CAS No. 1314-13-2
Appearance Fine white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20–80nm (Size Can be customized),  Ask for other available size range.
Ingredient (Zn₁₋ₓAlₓ)O
Molecular Weight 81.38 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.6 g/cm³
Product Codes NCZ-278I
 

Aluminum Fluoride (AlF3) 99.999% Optical Grade

Price range: $205.00 through $3,175.00
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Product Aluminum Fluoride (AlF3) 99.999% Optical Grade
CAS No. 7784-18-1
Appearance White, odorless solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 20–80nm (Size Can be customized),  Ask for other available size range.
Ingredient AlF3
Molecular Weight 83.98 g/mol
Melting Point 1,290 °C
Boiling Point N/A
Density 3.10 g/cm³
Product Codes NCZ-279I

Aluminum Fluoride (AlF3) Powder 99.99% Optical Grade

$499.00
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Product Aluminum Fluoride (AlF3) Powder 99.99% Optical Grade
CAS No. 7784-18-1
Appearance White, odorless solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–10µm (Size Can be customized),  Ask for other available size range.
Ingredient AlF3
Molecular Weight 83.98 g/mol
Melting Point 1,290 °C
Boiling Point N/A
Density 3.10 g/cm³
Product Codes NCZ-280I
 

Aluminum Fluoride (AlF3) Powder, 99%, 1kg

$132.00
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Product Aluminum Fluoride (AlF3) Powder, 99%, 1kg
CAS No. 7784-18-1
Appearance White to off-white crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 10–50µm (Size Can be customized),  Ask for other available size range.
Ingredient AlF3
Molecular Weight 83.98 g/mol
Melting Point 1,290 °C
Boiling Point N/A
Density 3.10 g/cm³
Product Codes NCZ-281I

Aluminum Foam for Battery and Supercapacitor Research, Purity: 99+%, Size : 100 mm x100 mm x 4mm

Price range: $85.00 through $365.00
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APPLICATIONS
  • Aluminum foam has distinctive properties such as high porosity, lightweight, large specific surface area high rigidity and strength.
  • It can be used for noise, energy and heat absorption, sensor, battery and catalysis applications.
  • In battery research, the porous aluminum foam can improve the capacity, cycling performance, and thermal management of batteries.

Aluminum Foam(Closed Macropore) (539569)

$364.00
Aluminum Foam(Closed Macropore) (539569)
Product # Density(g/cm³) Porosity(%) Primary pore diameter(mm)
539569-1 0.20-0.35 93-87 7-10
539569-2 0.36-0.50 87-81 5-7
539569-3 0.51-0.70 81-74 3-5
    Product Codes- NCZ-2668K

Aluminum Foam(Open Micropore, 1.6mm) (537636)

$545.00
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Aluminum Foam(Open Micropore, 1.6mm) (537636)
  Primary Pore Size: 1.6mm Porosity: 85-90% Through Hole Rate: 50% Volume Density: 0.7g/cm3 Dimensions: per customer request   Product Codes- NCZ-2670K

Aluminum Foil for Battery Cathode Substrate, Size: 350 m*280 mm*15 µm

Price range: $263.00 through $5,313.00
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1 piece/263 € 5 pieces/1182 € 25 pieces/5313 € Please contact us for quotes on larger quantities !!! Aluminum Foil for Battery Cathode Substrate

Aluminum Foil for Battery Cathode Substrate, Size: 350 m*280 mm*15 µm

Price range: $263.00 through $5,313.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/263 € 5 pieces/1182 € 25 pieces/5313 € Please contact us for quotes on larger quantities !!! Aluminum Foil for Battery Cathode Substrate

Aluminum HFAC

Price range: $16.00 through $67.00
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Product Aluminum HFAC
CAS No. 15306-18-0
Appearance White to off-white crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Al(CF₃COCHCOCF₃)₃
Molecular Weight 648.17 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-307R
 

Aluminum Hydroxide (Al(OH)3) Nanopowder/Nanoparticles, High Purity: 99.95%, Size: 8-18 nm, Hydrophilic

Price range: $27.00 through $602.00
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5 grams/24 € 
25 grams/56 € 100 grams/112 €
500 grams/336 €  1000 grams/530 € 
                      
Please contact us for quotes on larger quantities !!!

Aluminum Hydroxide (Al(OH)3) Nanopowder/Nanoparticles

High Purity: 99.95%, Size: 8-18 nm, Hydrophilic  .

Applications:

Aluminum Hydroxide nanoparticle is used as a fire retardant and fire retandant filler. It decomposes at 180°C and absorb heat releasing water vapor. It is used as smoke suppressant in many polymers. In medicine, aluminum hydroxide nanoparticles are also used as antacid. It reacts with excess acid in the stomach and reduce its acidity.

Aluminum Hydroxide Nanoparticles/Nanopowder ( Al(OH)3, high purity: 99.99%, 30-100 nm)

Price range: $123.00 through $380.00
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$123/100g
$380/500g

Product 

Aluminum Hydroxide Nanoparticles/Nanopowder ( Al(OH)3, high purity: 99.99%, 30-100 nm)

CAS No.

21645-51-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

30-100 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 78.00 g/mol

Melting Point

N/A

Boiling Point

 N/A

Density

~2.42 g/cm³

Product Codes

NCZ-1095K

Aluminum isopropoxide, 99.999%

Price range: $24.00 through $116.00
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Product Aluminum isopropoxide, 99.999%
CAS No. 555-31-7
Appearance White to off-white
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient C₉H₂₁AlO₃
Molecular Weight N/A
Melting Point 118–122 °C
Boiling Point N/A
Density 0.87 g/cm³
Product Codes NCZ-101R

Aluminum isopropoxide, 99.999%

Price range: $24.00 through $116.00
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Product Aluminum isopropoxide, 99.999%
CAS No. 555-31-7
Appearance White to near-white solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient C₁₅H₄₀O₅Zr
Molecular Weight 204.24 g/mol
Melting Point 138–142 °C
Boiling Point 135 °C
Density N/A
Product Codes NCZ-189R
 

Aluminum Laminated Film for Pouch Cell Case

Price range: $357.00 through $1,095.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Aluminum Laminated Film for Pouch Cell Case is used as casing material for polymer Li-Ion battery.

Aluminum Laminated Film, Width: 400 mm, Length: 7.5 m

Price range: $295.00 through $6,238.00
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Applications:

Aluminum Laminated Film for Pouch Cell Case, 400 mm W x 7.5 m, L - EQ-alf-400-7.5M

Aluminum Laminated Film, Width: 400 mm, Length: 7.5 m

Price range: $295.00 through $6,238.00
Select options This product has multiple variants. The options may be chosen on the product page

Aluminum Metaphosphate Al(PO3)3 Powder 99.999% 5N, 1 kg

$535.00
Product Aluminum Metaphosphate Al(PO3)3 Powder 99.999% 5N, 1 kg
CAS No. 13776-88-0
Appearance White to off-white solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–10µm (Size Can be customized),  Ask for other available size range.
Ingredient Al(PO₃)₃
Molecular Weight 325.89 g/mol
Melting Point 725–800 °C
Boiling Point N/A
Density 2.5–2.7 g/cm³
Product Codes NCZ-282I
 

Aluminum Nanoparticles

$0.00

Aluminum Nanoparticles

MF: Al
Chemical Name: Aluminum
Purity: > 99.99%
APS: 50 nm (Size Customization possible)
Form: Nanopowder
Product Number: #NCZ201
CAS Number 7429-90-5

Aluminum Nanoparticles

Note: We can supply different size products of microparticles and Nanoparticles Size range powder according to the client’s requirements.

Aluminum Nanoparticles/ Nanopowder ( Al, 99.7% 60-80 nm)

Price range: $95.00 through $275.00
Select options This product has multiple variants. The options may be chosen on the product page
$95/25g
$275/100g

Product 

Aluminum Nanoparticles/ Nanopowder ( Al, 99.7% 60-80 nm)

CAS No.

24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

60-80 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

AlN

Molecular Weight

40.982 g/mol

Melting Point

2200 °C

Boiling Point

2517 °C

Density

3.3 g/cm³

Product Codes

NCZ-1011K

Aluminum Nanoparticles/ Nanopowder (Al, 99.7% 40-60 nm)

Price range: $116.00 through $815.00
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$116/25g
$332/100g
$815/250g

Product 

Aluminum Nanoparticles/ Nanopowder (Al, 99.7% 40-60 nm)

CAS No.

24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

40-60 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

AlN

Molecular Weight

40.982 g/mol

Melting Point

2200 °C

Boiling Point

2517 °C

Density

3.3 g/cm³

Product Codes

NCZ-1010K

Aluminum Nanoparticles/ Nanopowder (Al) 99.7+%, 100~130 nm

Price range: $95.00 through $275.00
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$95/25g
$275/100g

Product 

Aluminum Nanoparticles/ Nanopowder (Al) 99.7+%, 100~130 nm

CAS No.

24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

100~130 nm (Size Can be customized), Ask for other available size ranges.

Ingredient

AlN

Molecular Weight

40.982 g/mol

Melting Point

2200 °C

Boiling Point

2517 °C

Density

3.3 g/cm³

Product Codes

NCZ-1012K

Aluminum Nickel Composite Strip for Battery Tab, Width: 4 mm, Thickness: 0.1 mm, 1Roll: 1 kg

Price range: $360.00 through $1,225.00
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Applications:

Aluminum Nickel Composite Strip for Battery Tab is mainly used for welding aluminum casing parts of lithium ion batteries.

Aluminum nitrate, 99.999%

Price range: $16.00 through $45.00
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Product Aluminum nitrate, 99.999%
CAS No. 7784-27-2
Appearance White crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient Al(NO₃)₃·9H₂O
Molecular Weight 375.13 g/mol
Melting Point N/A
Boiling Point N/A
Density 1.72 g/cm³
Product Codes NCZ-102R
 

Aluminum Nitride (AlN) Nanopowder/Nanoparticles, Purity: 99.95%, Size: 60-70 nm, Hexagonal

Price range: $35.00 through $152.00
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5 grams/31 € 25 grams/51 € 100 grams/134 € 
Please contact us for quotes on larger quantities !!!

Aluminum Nitride (AlN) Nanopowder/Nanoparticles

Purity: 99.95%, Size: 60-70 nm, Hexagonal

Storage Condition: 

Aluminum nitride nanoparticles should be sealed in vacuum and stored in cool and dry room. It should not be exposure to air and avoid stress.

Applications:

Aluminum nitride nanoparticles has applications in elecronic devices, optical devices, and in composites. It is used in manufacturing of integrated circuit boards. It has high thermal conductivity. It used in the fabrication of metal matrix and polymer matrix composites that is used in heat seal adhesives and electronic packaging materials. It is also used in making high thermally conductive ceramics, high temperature crucibles, heat sinks, and thermally conductive filler for polymers.

Aluminum Nitride (AlN) Nanopowder/Nanoparticles, Purity: 99.95%, Size: 790 nm, Hexagonal

Price range: $121.00 through $459.00
Select options This product has multiple variants. The options may be chosen on the product page
100 grams/107 €
500 grams/299 €  1000 grams/405 € 
                      
Please contact us for quotes on larger quantities !!!

Aluminum Nitride (AlN) Nanopowder/Nanoparticles

Purity: 99.95%, Size: 790 nm, Hexagonal

Applications:

Aluminum nitride powder has applications in elecronic devices, optical devices, and in composites. It is used in manufacturing of integrated circuit boards. It has high thermal conductivity. It used in the fabrication of metal matrix and polymer matrix composites that is used in heat seal adhesives and electronic packaging materials. It is also used in making high thermally conductive ceramics, high temperature crucibles, heat sinks, and thermally conductive filler for polymers.

Aluminum Nitride (AlN) Powder, 99.9% (3N) Purity, -325 Mesh

Price range: $389.00 through $3,868.00
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Product Aluminum Nitride (AlN) Powder, 99.9% (3N) Purity, -325 Mesh
CAS No. 24304-00-5
Appearance White to light gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–5µm (Size Can be customized),  Ask for other available size range.
Ingredient AlN
Molecular Weight 40.99 g/mol
Melting Point 2,200 °C
Boiling Point N/A
Density 3.26 g/cm³
Product Codes NCZ-283I

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 1”, Thickness: 0.125”

$436.00

 Applications of Sputtering Targets;

  The use of sputtering targets is for film deposition, among other applications. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 1”, Thickness: 0.125”

$718.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 1'', Thickness: 0.125''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2553K

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 1”, Thickness: 0.125”

$618.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 2”, Thickness: 0.125”

$884.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering is sputtering, a process that alters the physical and chemical characteristics of bodies without air, such the Moon and asteroids.

Aluminum nitride is a chemical compound with the formula AlN. It possesses a superior blend of mechanical, chemical, and physical properties. attributes. Superior aluminum nitride films have found application in a wide range of sensors and devices, including optoelectronic and optical ones. As Regarding optical and optoelectronic applications, a large band gap (~6.2 eV), a high refractive index (~2.0), and minimal absorption AlN is an extremely appealing material for these applications due to its coefficient (<10−3).

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 2”, Thickness: 0.125”

$1,030.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 2'', Thickness: 0.125''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2552K

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 2”, Thickness: 0.125”

$884.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 3”, Thickness: 0.125”

$1,029.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 3'', Thickness: 0.125''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2551K

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 3”, Thickness: 0.125”

$883.00

Applications of Sputtering Targets;

For film deposition, sputtering targets are employed. Using a "target" source to erode material onto a "substrate" like a silicon wafer, sputter targets are a technique for depositing thin layers. Targets are etched using semiconductor sputtering targets. When etching anisotropy is required to a great degree and selectivity is not an issue, sputter etching is the method of choice. By etching away the target material, sputter targets are also utilized for investigation. In one instance, the target sample is sputtered at a steady pace in secondary ion spectroscopy (SIMS). Using mass spectrometry, the concentration and identity of the spewed atoms are determined when the target is sputtered. With assistance from the sputtering target, the It is possible to identify the target material and even detect incredibly tiny impurity amounts. There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering. The chemical compound aluminum nitride has the formula AlN. The combination of mechanical, chemical, and physical properties of aluminum nitride is exceptional. Superior aluminum nitride films have found application in a wide range of sensors and devices, including optoelectronic and optical ones. Regarding optical and optoelectronic applications, AlN is a very desirable material due to its broad band gap (~6.2 eV), high refractive index (~2.0), and low absorption coefficient (<10−3).

Aluminum Nitride (AlN) Sputtering Targets, elastomer, Purity: 99.8%, Size: 3”, Thickness: 0.125”

$883.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 1”, Thickness: 0.125”

$372.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

Using mass spectrometry, the identification and concentration of spewed atoms are determined. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound aluminum nitride has the formula AlN.The exceptional combination of mechanical, chemical, and physical properties of aluminum nitride

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 1”, Thickness: 0.125”

$429.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 1'', Thickness: 0.125''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2561K

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 1”, Thickness: 0.125”

$372.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 1”, Thickness: 0.250”

$436.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound aluminum nitride has the formula AlN.The exceptional combination of mechanical, chemical, and physical properties of aluminum nitride

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 1”, Thickness: 0.250”

$503.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 1'', Thickness: 0.250''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2560K

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 1”, Thickness: 0.250”

$436.00

 Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2”, Thickness: 0.125”

$629.00

 Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material's composition and even detect incredibly low impurity quantities.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound aluminum nitride has the formula AlN. The combination of mechanical, chemical, and physical properties of aluminum nitride is exceptional. Superior aluminum nitride films have found application in a wide range of sensors and devices, including optoelectronic and optical ones. High refractive index (~2.0), low absorption, and a broad band gap (~6.2 eV) are important characteristics for optical and optoelectronic applications.

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2”, Thickness: 0.125”

$728.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2'', Thickness: 0.125''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2559K

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2”, Thickness: 0.125”

$629.00

 Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2”, Thickness: 0.250”

$788.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound aluminum nitride has the formula AlN. The combination of mechanical, chemical, and physical properties of aluminum nitride is exceptional. Superior aluminum nitride films have found application in a wide range of sensors and devices, including optoelectronic and optical ones. Regarding optical and optoelectronic applications, AlN is a very desirable material due to its broad band gap (~6.2 eV), high refractive index (~2.0), and low absorption coefficient (<10−3).

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2”, Thickness: 0.250”

$914.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2'', Thickness: 0.250''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2558K

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 2”, Thickness: 0.250”

$788.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 3”, Thickness: 0.125”

$744.00

 Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound aluminum nitride has the formula AlN. The combination of mechanical, chemical, and physical properties of aluminum nitride is exceptional. Superior aluminum nitride films have found application in a wide range of sensors and devices, including optoelectronic and optical ones. Regarding the optical and optoelectronic uses, a large band gap (~6.2 eV), a high refractive index (~2.0), and low absorption

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 3”, Thickness: 0.125”

$866.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 3'', Thickness: 0.125''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2557K

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 3”, Thickness: 0.125”

$744.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 3”, Thickness: 0.250”

$983.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. When the target shatters,

Mass spectrometry measures the concentration and identity of sputtered atoms. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound aluminum nitride has the formula AlN. The combination of mechanical, chemical, and physical properties of aluminum nitride is exceptional. Superior aluminum nitride films have found application in a wide range of sensors and devices, including optoelectronic and optical ones.

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 3”, Thickness: 0.250”

$1,146.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 3'', Thickness: 0.250''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2556K

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 3”, Thickness: 0.250”

$983.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 4”, Thickness: 0.125”

$1,366.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 4'', Thickness: 0.125''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2555K

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 4”, Thickness: 0.125”

$1,171.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. With the sputtering target's assistance, the

It is possible to identify the target material and even detect incredibly tiny impurity amounts.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical compound aluminum nitride has the formula AlN. The combination of mechanical, chemical, and physical properties of aluminum nitride is exceptional. Superior aluminum nitride films have found application in a wide range of sensors and devices, including optoelectronic and optical ones. Regarding optical and optoelectronic applications, AlN is a very desirable material due to its broad band gap (~6.2 eV), high refractive index (~2.0), and low absorption coefficient (<10−3).

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size: 4”, Thickness: 0.125”

$1,171.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon. Aluminum nitride is a chemical compound with the formula of AlN.Aluminum nitride has excellent combination of physical, chemical, and mechanical properties. High-quality films of aluminum nitride have been used in various devices and sensors including the optical and optoelectronic devices. As far as the optical and optoelectronic applications are concerned, wide band gap (~6.2 eV) along with high-refractive index (~2.0) and low-absorption coefficient (<10−3) makes AlN a very attractive material for these applications. In addition to this, thermal and chemical stability of AlN films make it suitable for applications in difficult environment. Today, AlN films/coatings have been grown by several methods which include pulsed laser deposition, reactive molecular beam epitaxy, vacuum arc/cathodic arc deposition, DC/RF reactive sputtering, ion beam sputtering, metal-organic chemical vapor deposition (MOCVD), and miscellaneous other techniques. Due to simplicity, reproducibility, ease of scaling up, and lower cost, magnetron sputtering is one of the common methods for growing AlN films for various applications. Properties of AlN films depend upon the crystal structure, crystal orientation, microstructure, and chemical composition, which in turn depend upon the deposition conditions such as sputtering power, pulse frequency, duty cycle, growth temperature, nitrogen/argon flow ratio, and sputtering gas pressure. AlN sputtering targets give good result with the method of reactive DC magnetron sputtering system.

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size:4”, Thickness: 0.250”

$1,415.00

Product 

Aluminum Nitride (AlN) Sputtering Targets, Purity: 99.8%, Size:4'', Thickness: 0.250''

CAS No.

 24304-00-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.99 g/mol

Melting Point

 ~2200 °C

Boiling Point

 N/A

Density

 ~3.26 g/cm³

Product Codes

NCZ-2554K