Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$672.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Cobalt (Co) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

$672.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

The chemical element cobalt has the atomic number 27 and the symbol Co. Cobalt is a silver-gray, hard, and shiny metal. Because it is one of only three room temperature ferromagnets with unaxial symmetry and hence suitability for digital recording, cobalt is employed in the production of high-strength, wear-resistant alloys as well as magnetic recording.

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$672.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When etching anisotropy is high, sputter etching is the preferred method.

is required, and selectivity is unimportant. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Nitride (Si3N4) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.125”, Dark Gray to Black

$672.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Strontium Titanate (SrTiO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$672.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, elastomer, Purity: 99.95%, Size: 3”, Thickness: 0.125”

$672.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Cerium Fluoride (CeF3) Sputtering Target

Price range: $672.00 through $1,599.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Cerium Fluoride (CeF3) Sputtering Target

CAS No.

7758‑88‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

197.12 g/mol

Melting Point

1,460 °C

Boiling Point

~2,300 °C

Density

 6.16 g/cm³

Product Codes

NCZ-1386K

Lanthanum fluoride (LaF3) Sputtering Target

Price range: $672.00 through $1,599.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lanthanum fluoride (LaF3) Sputtering Target

CAS No.

13709‑38‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~195.9 g/mol

Melting Point

~1,493 °C

Boiling Point

N/A

Density

~5.9–5.94 g/cm³

Product Codes

NCZ-1388K

Titanium Boride (TiB2) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$672.00

Product 

Titanium Boride (TiB2) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.250''

CAS No.

 12045-63-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

69.49 g/mol

Melting Point

 ~3225 °C

Boiling Point

N/A

Density

 4.52 g/cm³

Product Codes

NCZ-1617K

Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$673.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 8”, Thickness: 0.250”

$673.00

Product 

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 8'', Thickness: 0.250''

CAS No.

1314‑62‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

181.88 g/mol

Melting Point

690 °C

Boiling Point

~1750 °C

Density

~3.35 g/cm³

Product Codes

NCZ-1534K

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.250”

$673.00

Product 

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.250''

CAS No.

 12070-08-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

59.89 g/mol

Melting Point

 ~3160 °C

Boiling Point

N/A

Density

4.93 g/cm³

Product Codes

NCZ-1613K

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$673.00

Product 

Tin (Sn) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.93 °C

Boiling Point

2602 °C

Density

~7.31 g/cm³

Product Codes

NCZ-1633K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$673.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, indium, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

 Sublimes around 3,600°C (no true melting)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2336K

Carbon Nanotube Fibres, Fiber Diameter: 5-12 µm, Tensile Strength 1200-1500 MPa, Electrical conductivity 5×10^4~7×10^4 S/m

Price range: $674.00 through $2,933.00
Select options This product has multiple variants. The options may be chosen on the product page
Carbon Nanotube Fibres, Fiber Diameter: 5-12 µm, Tensile Strength 1200-1500 MPa, Electrical conductivity 5×104~7×104 S/m Carbon nanotube fibers have moderate to high strengths. Also, they possess good electrical conductivity and very low density. Due to these properties, carbon nanotube fibers can be integrated into fabrics and composites. Their area of usage involves their use as stand-alone or embedded sensors. Moreover, their high strength, stiffness, thermal and electrical conductivity enable their use as functional reinforcements in composite materials, in active heating/cooling systems, electrical conductivity/EMI shielding mechanisms such as CNT/epoxy composites and in atmospheric anti-threat detection in UAVs.

Carbon (C) Sputtering Targets, indium, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$674.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Molybdenum Disilicide (MoSi2) Sputtering Targets, Purity: 99.95%, Size: 4”, Thickness: 0.250”

$674.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$674.00

Product 

Vanadium Oxide (V2O5) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.250''

CAS No.

1314‑62‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

181.88 g/mol

Melting Point

690 °C

Boiling Point

~1750 °C

Density

~3.35 g/cm³

Product Codes

NCZ-1535K

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 6”, Thickness: 0.250”

$674.00

Product 

Tungsten Disulfide (WS2) Sputtering Targets, Purity: 99.9%, Size: 6'', Thickness: 0.250''

CAS No.

 12138-09-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

247.97 g/mol

Melting Point

~1,250 °C

Boiling Point

N/A

Density

~7.5 g/cm³

Product Codes

NCZ-1576K

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$674.00

Product 

Carbon (C) (Pyrolytic Graphite) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

 7782-42-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 12.01 g/mol

Melting Point

Sublimes at ~3652 °C (does not melt under normal pressure)

Boiling Point

Sublimes directly ~4,200°C

Density

 ~2.2–2.25 g/cm³

Product Codes

NCZ-2337K

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$675.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$675.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.250”

$675.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When etching anisotropy is high, sputter etching is the preferred method.

is required, and selectivity is unimportant. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

By helping of the sputtering target, the composition of the target material may be evaluated and even extremely tiny amounts of contaminants are recognized.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$676.00

Product 

Tin Oxide (SnO2) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.

18282-10-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

150.71 g/mol

Melting Point

~1630 °C

Boiling Point

~1800–1900 °C

Density

~6.95 g/cm³

Product Codes

NCZ-1629K

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.125”

$676.00

Product 

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.125''

CAS No.

123273‑09‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~313.9 g/mol

Melting Point

 ~1,550 °C (approximate; ceramic decomposition likely above)

Boiling Point

N/A

Density

 ~5.3 g/cm³ @ room temp

Product Codes

NCZ-2150K

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$676.00

Product 

Antimony Telluride (Sb2Te3) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.

12068-69-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

626.32 g/mol

Melting Point

620 °C

Boiling Point

N/A

Density

 6.50 g/cm³

Product Codes

NCZ-2499K

99% (2N) Boron (B) Amorphous Powder, 100g

$677.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99% (2N) Boron (B) Amorphous Powder, 100g
CAS No. 7440-42-8
Appearance Black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100nm. (Size Can be customized),  Ask for other available size range.
Ingredient B
Molecular Weight 10.81  g/mol
Melting Point N/A
Boiling Point N/A
Density 2.34 g/cm³
Product Codes NCZ-209I

99.9% Neodymium Iron Boron Magnetic Powder (NdFeB)

Price range: $677.00 through $1,939.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99.9% Neodymium Iron Boron Magnetic Powder (NdFeB)
CAS No. N/A
Appearance Dark gray to black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 3-10µm (Size Can be customized),  Ask for other available size range.
Ingredient Nd₂Fe₁₄B
Molecular Weight 1,081.19 g/mol
Melting Point N/A
Boiling Point N/A
Density 4.8–5.1 g/cm³
Product Codes NCZ-231I

Lithium Niobate LiNbO3 Sputtering Target with 5 at.% excess Li2O

Price range: $678.00 through $920.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Lithium Niobate LiNbO3 Sputtering Target with 5 at.% excess Li2O
CAS No. 12031-63-9
Appearance Dense, white or light gray ceramic material
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient LiNbO3
Molecular Weight 147.846 g/mol
Melting Point 1,257 °C 
Boiling Point N/A
Density N/A
Product Codes NCZ-126H

99.9wt% Aminated Hollow Mesoporous Silica Solution, 5 mg/mL (Spherical)

Price range: $678.00 through $1,089.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99.9wt% Aminated Hollow Mesoporous Silica Solution, 5 mg/mL (Spherical)
CAS No. 7631-86-9
Appearance Milky-white or slightly translucent
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100–500nm (Size Can be customized),  Ask for other available size range.
Ingredient SiO₂
Molecular Weight 60.08 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.0–2.2 g/cm³
Product Codes NCZ-268I

99.9wt% Carboxylated Hollow Mesoporous Silica Solution, 5 mg/mL (Spherical)

Price range: $678.00 through $1,089.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 99.9wt% Carboxylated Hollow Mesoporous Silica Solution, 5 mg/mL (Spherical)
CAS No. 7631-86-9
Appearance White to slightly opalescent
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100–500nm (Size Can be customized),  Ask for other available size range.
Ingredient (SiO2)x(-COOH)y
Molecular Weight 60.08 g/mol
Melting Point N/A
Boiling Point N/A
Density 2.0–2.2 g/cm³
Product Codes NCZ-270I

Gadolinium (III) Fluoride, GdF3, 99.99% 4N High Purity Powder

$678.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Gadolinium (III) Fluoride, GdF3, 99.99% 4N High Purity Powder
CAS No. 13765-26-9
Appearance White crystalline
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 44–150µm (Size Can be customized),  Ask for other available size range.
Ingredient GdF3
Molecular Weight 214.25 g/mol
Melting Point N/A
Boiling Point N/A
Density 7.10 g/cm³
Product Codes NCZ-348I

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$678.00

Product 

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

 1304-76-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

465.96 g/mol

Melting Point

 ~817 °C

Boiling Point

N/A

Density

 ~8.9 g/cm³

Product Codes

NCZ-2409K

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$678.00

Product 

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

 1304-76-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

465.96 g/mol

Melting Point

 ~817 °C

Boiling Point

N/A

Density

 ~8.9 g/cm³

Product Codes

NCZ-2410K

Iron Oxide (Fe3O4) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$679.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

3N (99.9%) Lithium Fluoride (LiF) Pieces Evaporation Materials

Price range: $679.00 through $1,485.00
Select options This product has multiple variants. The options may be chosen on the product page
Product 3N (99.9%) Lithium Fluoride (LiF) Pieces Evaporation Materials
CAS No. 7789-24-4
Appearance White, Crystalline Solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 3-6mm (Size Can be customized),  Ask for other available size range.
Ingredient LiF
Molecular Weight N/A
Melting Point 845 °C
Boiling Point N/A
Density 2.64 g/cm³
Product Codes NCZ-142E
 

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$679.00

Product 

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.

12009‑21‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

276.55 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

~5.52 g/cm³ (theoretical)

Product Codes

NCZ-2447K

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

$679.00

Product 

Barium Zirconate (BaZrO3) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.125''

CAS No.

12009‑21‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

1 – 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

276.55 g/mol

Melting Point

N/A

Boiling Point

N/A

Density

~5.52 g/cm³ (theoretical)

Product Codes

NCZ-2448K

Carbon Quantum Dots (CQD) 675 nm

Price range: $680.00 through $1,180.00
Select options This product has multiple variants. The options may be chosen on the product page
APPLICATIONS Carbon quantum dots are employed in the following because of their optical, electrical, and biological characteristics:
  • Bioimaging,
  • Photovoltaics,
  • Photocatalysis,
  • Drug delivery,
  • Sensors,
  • Optronics.

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$680.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Lanthanum Manganate (LaMnO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$680.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum Titanate (LaTiO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$681.00
 

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$681.00

Product 

Tungsten Titanium (TiW) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.

58397-70-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~231.71 g/mol

Melting Point

~2,700–3,200 °C

Boiling Point

~4,500–5,000 °C

Density

~14.5–17.0 g/cm³

Product Codes

NCZ-1558K

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5”, Thickness: 0.250”

$681.00

Product 

Lanthanum Calcium Manganate (La0.7Ca0.3MnO3) Sputtering Targets, Purity: 99.9%, Size: 5'', Thickness: 0.250''

CAS No.

123273‑09‑6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~313.9 g/mol

Melting Point

 ~1,550 °C (approximate; ceramic decomposition likely above)

Boiling Point

N/A

Density

 ~5.3 g/cm³ @ room temp

Product Codes

NCZ-2149K

Molybdenum Disulfide (MoS2) Sputtering Targets, indium, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$682.00

Product 

Molybdenum Disulfide (MoS2) Sputtering Targets, indium, Purity: 99.9%, Size: 1'', Thickness: 0.125''

CAS No.

 1317-33-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 160.07 g/mol

Melting Point

 ~1185 °C

Boiling Point

 ~4500 °C

Density

 ~5.06 g/cm³

Product Codes

NCZ-1908K

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.125”

$682.00

Product 

Magnesium Oxide (MgO) Sputtering Targets, Purity: 99.95%, Size: 1'', Thickness: 0.125''

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.30 g/mol

Melting Point

 ~2852 °C

Boiling Point

~3600 °C

Density

 ~3.58 g/cm³

Product Codes

NCZ-1976K

Polyglutamic acid(PGA, Cosmetic grade) (439511)

Price range: $682.00 through $932.00
Select options This product has multiple variants. The options may be chosen on the product page
Polyglutamic acid(PGA, Cosmetic grade) (439511)
 
Synonym  PGA, γ-PGA-Na, γ-Polyglutamic Acid, Gamma-Polyglutamic acid   Product Codes- NCZ-2677K

Magnesium carbonate trihydrate whisker(MgCO3·3H2O, ≥99%, L=30-50µm, D=0.2-0.5µm) (126665)

$682.00
Select options This product has multiple variants. The options may be chosen on the product page
Magnesium carbonate trihydrate whisker(MgCO3·3H2O, ≥99%, L=30-50µm, D=0.2-0.5µm) (126665)

     

MgO

30.16%

Length-Diameter ratio

50-100

Length/µm

30-50

Diameter/µm

0.2-0.5

 
Product Codes- NCZ-2753K

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$683.00

Product 

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

 12070-08-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

59.89 g/mol

Melting Point

 ~3160 °C

Boiling Point

N/A

Density

4.93 g/cm³

Product Codes

NCZ-1612K

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 1”, Thickness: 0.250”

$683.00

Product 

Lithium Phosphate (Li3PO4) Sputtering Targets, Purity: 99.95%, Size: 1'', Thickness: 0.250''

CAS No.

10377-52-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 115.79 g/mol

Melting Point

 ~837 °C

Boiling Point

~158 °C (likely decomposition)

Density

 ~2.53 g/cm³

Product Codes

NCZ-2034K

Lutetium Oxide (Lu2O3) Sputtering Target, CAS 12032-20-1

Price range: $684.00 through $1,623.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lutetium Oxide (Lu2O3) Sputtering Target, CAS 12032-20-1

CAS No.

12032‑20‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

397.93–397.94 g/mol

Melting Point

~2,490 °C

Boiling Point

~3,980 °C

Density

~9.42 g/cm³

Product Codes

NCZ-1374K

Silicon Nitride (Si3N4) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”, White to Gray

$684.00

Product 

Silicon Nitride (Si3N4) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125'', White to Gray

CAS No.

 12033-89-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 140.28 g/mol

Melting Point

 ~1900 °C

Boiling Point

N/A

Density

~3.2 g/cm³

Product Codes

NCZ-1696K

Yttrium Ferrite (Y3Fe5O12) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$686.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$686.00

Product 

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.125''

CAS No.

25583-20-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

61.88 g/mol

Melting Point

 ~2950 °C

Boiling Point

~4300 °C

Density

5.22 g/cm³

Product Codes

NCZ-1603K

Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$686.00

Product 

Boron Nitride (BN) Sputtering Targets, Purity: 99.5%, Size: 3'', Thickness: 0.250''

CAS No.

 10043-11-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

24.82 g/mol

Melting Point

~2973 °C

Boiling Point

N/A

Density

~2.1 g/cm³

Product Codes

NCZ-2370K

Zinc Oxide (ZnO) Sputtering Targets, indium, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$687.00

Product 

Zinc Oxide (ZnO) Sputtering Targets, indium, Purity: 99.9%, Size: 1'', Thickness: 0.125''

CAS No.

1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 (ZnO) (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

81.38 g/mol

Melting Point

1975 °C

Boiling Point

N/A

Density

5.61 g/cm³

Product Codes

NCZ-1499K

Lanthanum Aluminate (LaAlO3) Sputtering Targets, indium, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$688.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Lanthanum Aluminate (LaAlO3) Sputtering Targets, indium, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$688.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Boride (TiB2) Sputtering Targets, indium, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$688.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Molybdenum Oxide (MoO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$688.00

Product 

Molybdenum Oxide (MoO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

1313-27-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 143.94 g/mol

Melting Point

 ~795°C

Boiling Point

 ~1155°C

Density

 ~4.7 g/cm³

Product Codes

NCZ-1897K