Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, indium, Purity: 99.995%, Size: 1”, Thickness: 0.125”

$318.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Product	Silicon Dioxide (SiO2) Sputtering Targets, Fused Quartz, indium, Purity: 99.995%, Size: 2'', Thickness: 0.125''
CAS No.	60676-86-0
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	60.08 g/mol
Melting Point	~1715 °C
Boiling Point	~2230 °C
Density	~2.20 g/cm³
Product Codes	NCZ-1708K

Product	Silicon Disulfide, SiS2, 99.999% 5N High Purity Powder
CAS No.	13514-63-3
Appearance	White to pale yellow
Purity	≥99%, ≥99.9%, ≥95%(Other purities are also available)
APS	10µm (Size Can be customized), Ask for other available size range.
Ingredient	SiS2
Molecular Weight	90.19 g/mol
Melting Point	N/A
Boiling Point	N/A
Density	N/A
Product Codes	NCZ-518I

Product	Silicon Nanoparticles / Nanopowder ( Si, 98.5% 50 nm)
CAS No.	7440-21-3
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	50 nm (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	28.0855 g/mol
Melting Point	1,414 °C
Boiling Point	3,265 °C
Density	~2.33 g/cm³
Product Codes	NCZ-1071K

Product	Silicon Nanoparticles/ Nanopowder (Si, 99% 100 nm)
CAS No.	7440-21-3
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	100 nm (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	28.0855 g/mol
Melting Point	1,414 °C
Boiling Point	3,265 °C
Density	~2.33 g/cm³
Product Codes	NCZ-1065K

Product	Silicon Nanopowder/ nanoparticles (Si, 99.9%, 500 nm)
CAS No.	7440-21-3
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	500 nm (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	28.0855 g/mol
Melting Point	1,414 °C
Boiling Point	3,265 °C
Density	~2.33 g/cm³
Product Codes	NCZ-1068K

Product	Silicon Nitride (Si3N4) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.125'', Dark Gray to Black
CAS No.	12033-89-5
Appearance	Powder
Purity	≥99%, ≥99.9%, ≥95% (Other purities are also available)
APS	N/A (Size Can be customized), Ask for other available size ranges.
Ingredient	N/A
Molecular Weight	140.28 g/mol
Melting Point	~1900 °C
Boiling Point	N/A
Density	~3.2 g/cm³
Product Codes	NCZ-1705K

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Silicon Nitride (Si3N4) Nanopowder/Nanoparticles

Amorphous, Purity: 99.5%, Size: 20-35 nm

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Silicon Nitride (Si3N4) Nanopowder/Nanoparticles

Beta, Purity: 99.6%, Size: 760 nm

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