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Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 3'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$829.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1739K
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Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 3”, Thickness: 0.125”

, , ,
$710.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 4'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$812.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1738K
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Silicon (Si) Sputtering Targets, P-type, indium, Purity: 99.999%, Size: 4”, Thickness: 0.125”

, , ,
$696.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$86.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1753K
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1”, Thickness: 0.125”

, , ,
$78.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1'', Thickness: 0.250''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$86.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1752K
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 1”, Thickness: 0.250”

, , ,
$78.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$230.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1751K
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2”, Thickness: 0.125”

,
$200.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$294.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1750K
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 2”, Thickness: 0.250”

, , ,
$255.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$301.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1749K
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3”, Thickness: 0.125”

, , ,
$261.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3'', Thickness: 0.250''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$306.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1748K
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 3”, Thickness: 0.250”

, , ,
$265.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$355.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1747K
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4”, Thickness: 0.125”

, , ,
$307.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4'', Thickness: 0.250''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$414.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1746K
Add to compare
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 4”, Thickness: 0.250”

, , ,
$357.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6”, Thickness: 0.125”

$553.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1745K
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6”, Thickness: 0.125”

, , ,
$475.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6'', Thickness: 0.250''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6”, Thickness: 0.250”

$488.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1744K
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 6”, Thickness: 0.250”

, ,
$420.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Even very low quantities of contaminants can be detected with the aid of the sputtering target, allowing for the determination of the target material's composition.

Applications for sputtering targets are also found in space. One type of space weathering is sputtering, which modifies the chemical and physical characteristics of airless worlds like the Moon and asteroids.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8”, Thickness: 0.125”

$441.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1743K
Add to compare
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8”, Thickness: 0.125”

, , ,
$380.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8'', Thickness: 0.250''
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$453.00
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Product 

 Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

 1,414 °C

Boiling Point

3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1742K
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Silicon (Si) Sputtering Targets, P-type, Purity: 99.999%, Size: 8”, Thickness: 0.250”

, , ,
$390.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1”, Thickness: 0.125”

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Product 

 Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1737K
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1”, Thickness: 0.125”

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$76.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1'', Thickness: 0.250''
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1”, Thickness: 0.250”

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Product 

 Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1736K
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 1”, Thickness: 0.250”

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$103.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$193.00
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Product 

 Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1735K
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2”, Thickness: 0.125”

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$169.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Even very low quantities of contaminants can be detected with the aid of the sputtering target, allowing for the determination of the target material's composition.

Applications for sputtering targets are also found in space. One type of space weathering is sputtering, which modifies the chemical and physical characteristics of airless worlds like the Moon and asteroids.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2'', Thickness: 0.250''
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$217.00
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Product 

 Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1734K
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 2”, Thickness: 0.250”

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$189.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$401.00
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Product 

 Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1733K
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3”, Thickness: 0.125”

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$346.00
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Applications of Sputtering Targets;

For film deposition, sputtering targets are employed. A sputtering technique called "deposition made by sputter targets" entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Targets are etched using semiconductor sputtering targets. When etching anisotropy is required to a great degree and selectivity is not an issue, sputter etching is the method of choice. By etching away the target material, sputter targets are also utilized for investigation. In one instance, the target sample is sputtered at a steady pace in secondary ion spectroscopy (SIMS). Using mass spectrometry, the concentration and identity of the spewed atoms are determined when the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3'', Thickness: 0.250''
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$446.00
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Product 

 Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1732K
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 3”, Thickness: 0.250”

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$384.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 4'', Thickness: 0.125''
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$418.00
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Product 

 Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

7440-21-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 28.0855 g/mol

Melting Point

1,414 °C

Boiling Point

 3,265 °C

Density

  2.33 g/cm³

Product Codes

NCZ-1731K
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Silicon (Si) Sputtering Targets, undoped, Purity: 99.999%, Size: 4”, Thickness: 0.125”

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$360.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Fibers Powder, 10g/bottle
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Silicon Carbide (SiC) Fibers Powder, 10g/bottle

$374.00
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Product Silicon Carbide (SiC) Fibers Powder, 10g/bottle
CAS No. 60853-76-1
Appearance Gray to black fibrous
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100µm (Size Can be customized),  Ask for other available size range.
Ingredient SiC
Molecular Weight 40.10 g/mol
Melting Point N/A
Boiling Point N/A
Density 3.21 g/cm³
Product Codes NCZ-514I
 
Silicon Carbide (SiC) Nano Powder, 50g/bottle
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Silicon Carbide (SiC) Nano Powder, 50g/bottle

$517.00
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Product Silicon Carbide (SiC) Nano Powder, 50g/bottle
CAS No. 409-21-2
Appearance Gray to black
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 100nm (Size Can be customized),  Ask for other available size range.
Ingredient SiC
Molecular Weight 40.10 g/mol
Melting Point N/A
Boiling Point N/A
Density 3.21 g/cm³
Product Codes NCZ-515I
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Silicon Carbide (SiC) Nanopowder/Nanoparticles, Beta, Purity: 99.5+%, Size: < 70 nm

, ,
Price range: $66.00 through $867.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/59 € 25 grams/98 € 100 grams/196 € 500 grams/485 € 1000 grams/765 €
Please contact us for quotes on larger quantities !!!

Silicon Carbide (SiC) Nanopowder/Nanoparticles

Beta, Purity: 99.5+%, Size: < 70 nm

Storage Condition:

Silicon Carbide nanoparticles should be sealed in vacuum and stored in cool and dry room. It should not be exposure to air and avoid stress.

Applications:

Silicon carbide nanopowder can be used as a hard and high grade refractory material. It can be used in ceramics such as ceramic besrings, textile ceramics, high frequency ceramics, and ceramic engine parts. It also can be used in hard discs, polishing abrasives, grinding wheels, and as a support for multichip modules. Silicon carbide nanopowder has also high thermal conductivity. It can be used in high temperature sealing valves, high temperature spray nozzles, and high temperature fluid transport parts. It aslo can be used in composites to increase strength and heat resistance.
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Silicon Carbide (SiC) Nanopowder/Nanoparticles, Beta, Purity: 99.5+%, Size: 50-70 nm

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Price range: $44.00 through $544.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/39 € 25 grams/56 € 100 grams/97 € 500 grams/295 € 1000 grams/480 €
Please contact us for quotes on larger quantities !!!

Silicon Carbide (SiC) Nanopowder/Nanoparticles

Beta, Purity: 99.5+%, Size: 50-70 nm

Storage Condition:

Silicon Carbide nanoparticles should be sealed in vacuum and stored in cool and dry room. It should not be exposure to air and avoid stress.

Applications:

Silicon carbide nanopowder can be used as a hard and high grade refractory material. It can be used in ceramics such as ceramic besrings, textile ceramics, high frequency ceramics, and ceramic engine parts. It also can be used in hard discs, polishing abrasives, grinding wheels, and as a support for multichip modules. Silicon carbide nanopowder has also high thermal conductivity. It can be used in high temperature sealing valves, high temperature spray nozzles, and high temperature fluid transport parts. It aslo can be used in composites to increase strength and heat resistance.
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Silicon Carbide (SiC) Nanopowder/Nanoparticles, Beta, Purity: 99.5+%, Size: 790 nm

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Price range: $32.00 through $305.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/29 € 25 grams/44 € 100 grams/92 € 500 grams/173 € 1000 grams/269 €
Please contact us for quotes on larger quantities !!!

Silicon Carbide (SiC) Nanopowder/Nanoparticles

Beta, Purity: 99.5+%, Size: 790 nm

Storage Condition:

Silicon Carbide powder should be sealed in vacuum and stored in cool and dry room. It should not be exposure to air and avoid stress.

Applications:

Silicon carbide nanopowder can be used as a hard and high grade refractory material. It can be used in ceramics such as ceramic besrings, textile ceramics, high frequency ceramics, and ceramic engine parts. It also can be used in hard discs, polishing abrasives, grinding wheels, and as a support for multichip modules. Silicon carbide nanopowder has also high thermal conductivity. It can be used in high temperature sealing valves, high temperature spray nozzles, and high temperature fluid transport parts. It aslo can be used in composites to increase strength and heat resistance.
Silicon Carbide (SiC) Sputtering Target
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Silicon Carbide (SiC) Sputtering Target

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Price range: $368.00 through $914.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

 Silicon Carbide (SiC) Sputtering Target

CAS No.

409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 40.10 g/mol

Melting Point

~2,730 °C

Boiling Point

 ~2,700–3,000 °C

Density

 ~3.21 g/cm³

Product Codes

NCZ-1336K
Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 1'', Thickness: 0.125''
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Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$785.00
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Product 

 Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 1'', Thickness: 0.125''

CAS No.

 409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  40.10 g/mol

Melting Point

~2,700 °C

Boiling Point

N/A

Density

 ~3.21 g/cm³

Product Codes

NCZ-1723K
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Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 1”, Thickness: 0.125”

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$673.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 2'', Thickness: 0.125''
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Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$985.00
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Product 

 Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

 409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  40.10 g/mol

Melting Point

~2,700 °C

Boiling Point

N/A

Density

 ~3.21 g/cm³

Product Codes

NCZ-1722K
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Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 2”, Thickness: 0.125”

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$843.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 3'', Thickness: 0.125''
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Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$1,244.00
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Product 

 Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 3'', Thickness: 0.125''

CAS No.

 409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  40.10 g/mol

Melting Point

~2,700 °C

Boiling Point

N/A

Density

 ~3.21 g/cm³

Product Codes

NCZ-1721K
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Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 3”, Thickness: 0.125”

, , ,
$1,063.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 4'', Thickness: 0.125''
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Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$1,261.00
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Product 

 Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 4'', Thickness: 0.125''

CAS No.

 409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  40.10 g/mol

Melting Point

~2,700 °C

Boiling Point

N/A

Density

 ~3.21 g/cm³

Product Codes

NCZ-1720K
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Silicon Carbide (SiC) Sputtering Targets, indium, Purity: 99.5%, Size: 4”, Thickness: 0.125”

, , ,
$1,078.00
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Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.125''
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Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$472.00
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Product 

 Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.125''

CAS No.

 409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  40.10 g/mol

Melting Point

~2,700 °C

Boiling Point

N/A

Density

 ~3.21 g/cm³

Product Codes

NCZ-1730K
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Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.125”

, , ,
$406.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.250”

$488.00
Add to cart

Product 

 Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 1'', Thickness: 0.250''

CAS No.

 409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

N/A  (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  40.10 g/mol

Melting Point

~2,700 °C

Boiling Point

N/A

Density

 ~3.21 g/cm³

Product Codes

NCZ-1729K
Add to compare
Quick view
Add to wishlist

Silicon Carbide (SiC) Sputtering Targets, Purity: 99.5%, Size: 1”, Thickness: 0.250”

, , ,
$420.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.