Iron Oxide Water Dispersion has excellent properties like high transparency, color strength and strong absorption of UV, high durability and weather fastness. Under favour of its impressive features, iron oxide water dispersion has a wide application areas such as automotive paints and wood finishes, printing ink, industrial coatings and plastic applications. You can find Iron Oxide Water Dispersion in our catalog with affordable prices and high purity.

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Magnesium Oxide (MgO) Nanopowder/Nanoparticles Water Dispersion, Size: 45 nm, 22 wt%

DISPERSIONS, METAL AND OXIDE DISPERSIONS

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30 ml/38 € 60 ml/64 € 120 ml/98 € 500 ml/166 € 1000 ml/251 €

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Magnesium Oxide (MgO) Nanopowder/Nanoparticles Water Dispersion

Size: 45 nm, 22 wt%

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Zinc Oxide (ZnO) Nanopowder/Nanoparticles Water Dispersion, Size: 25-35 nm, 22 wt%

DISPERSIONS, GRAPHENE DISPERSIONS, METAL AND OXIDE DISPERSIONS

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30 ml/25 € 60 ml/42 € 120 ml/66 € 500 ml/117 € 1000 ml/169 €

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Zinc Oxide (ZnO) Nanopowder/Nanoparticles Water Dispersion

Size: 25-35 nm, 22 wt%

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Zirconium Oxide (ZrO2) Nanopowder/Nanoparticles Water Dispersion, Size: 40-50 nm, 22 wt%

DISPERSIONS, METAL AND OXIDE DISPERSIONS

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25 ml/24 € 50 ml/38 € 100 ml/65 € 500 ml/195 € 1000 ml/298 €

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Zirconium Oxide (ZrO2) Nanopowder/Nanoparticles Water Dispersion

Size: 40-50 nm, 22 wt%

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Silver (Ag) Nanopowder/Nanoparticles Water Dispersion, Size: 2 nm, Colorless & Transparent, 2.200 ppm

DISPERSIONS, METAL AND OXIDE DISPERSIONS

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25 grams/43 € 50 grams/69 € 100 grams/108 € 500 grams/340 € 1000 grams/635 €

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Silver (Ag) Nanopowder/Nanoparticles Water Dispersion

Size: 2 nm, Colorless & Transparent, 2.200 ppm

The silver water dispersion is a colorless & transparent or light yellow liquid, composed of nano silver that particle size is less than 2 nm. Silver (Ag) water dispersion is widely applicable for various fabrics including cotton, blending fabric, chemical fiber, non-woven fabric, leather, etc. We are glad to provide Ag in water with low prices.

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Titanium Dioxide (TiO2) Dispersion in PGMEA or PGME, Size: 1 µm, Rutile, 20 wt%

DISPERSIONS, METAL AND OXIDE DISPERSIONS

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120 ml/54 € 500 ml/95 € 1000 ml/184 €

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Titanium Dioxide (TiO2) Dispersion in PGMEA or PGME

Size: 1 µm, Rutile, 20 wt%

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Silver Nanowires Suspension in Ethanol, Purity: > 99 wt%, Diameter : 50 nm

DISPERSIONS, METAL AND OXIDE DISPERSIONS

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Applications:

Recently, the usage areas of silver nanowires are listed as;

Air and water purification Antimicrobial applications (e.g., bandages, coatings for medical devices, antibacterial fabrics) Catalysts Compact logic gates E-paper EMI shielding films and paints Fillers for high performance conductive adhesives Flexible antennas Flexible displays Light-emitting diodes (LEDs), OLED devices, OLED lighting Liquid crystal displays Medical imaging Optical limiters Sensors and detectors Solar cells, solar panels, thin film photovoltaics Surface enhanced spectroscopy (SERS) Touch screens for smartphones, tablets, and wearable electronics Waveguides

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Graphene Water Dispersion, Purity: 99.5%, Black Liquid, Graphene: 1,0 wt%

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30 ml/125 € 60 ml/224 € 120 ml/395 € 500 ml/1280 € 1000 ml/2360 € Please contact us for quotes on larger quantities !!!

Graphene Water Dispersion

Purity: 99.5%, Black Liquid, Graphene: 1,0 wt%

Graphene water dispersion raises environmentally safe handing of graphene for coating, composite, and other material applications. Graphene water dispersion is obtained by bath sonication of natural graphite flakes in water mixtures. Graphene water dispersion has outperformed commercial nano graphite at much lower loadings. Nanografi supplies Graphene Water Dispersion with high quantity and more types for different applications.

Technical Properties:

Graphene Purity (%)	99,5
Graphene Thickness (nm)	0,6-1,2 (single layer)
Diameter (µm)	2,0-12,0
Appearance	Black Liquid
Concentration (wt%)	1,0 (can be easily diluted)
Specific Surface Area (m²/g)	600-1200
Elemental Analysis	C	O
	99,6	<0,4

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Graphene Oxide Water Dispersion, Purity: 99.5%, Black Liquid, GO: 2,0 wt%

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25 ml / 126€ 100 ml / 390€ 500 ml / 582€ 1000 ml / 784€ Please contact us for quotes on larger quantities !!!

Graphene Oxide Water Dispersion

Purity: 99.5%, Black Liquid, GO: 2,0 wt%

Graphene Oxide Water Dispersion is black, odorless and very stable liquid which is suitable for the preparation of reduced graphene and graphene film. Graphene Oxide (GO) water dispersion has a wide range of applications such as transparent conductive films/coatings, solar energy, bio-sensing material, super capacitors and many more. Nanografi supplies graphene oxide water dispersion with high quantity and more types for different applications.

Technical Properties:

GO Purity (%)	99,5
GO Thickness (nm)	0,5-1,3 (single layer)
GO Diameter (µm)	2,0-6,0
Appearance	Black
Concentration (wt%)	2,0 (can be easily diluted)
Elemental Analysis	C	O	S
	68,75	31,02	0,17

Applications:

Graphene Oxide (GO) is the oxidized form of graphene nanoplatelets. It can be reduced with various chemical or physical treatments. In many of the chemical exfoliation experiments graphene is synthesized by reducing graphene oxide which comes from chemically treated graphite powder. Graphene oxide is also an attractive material for electronics industry because of its semiconducting properties. Graphene oxide is generally hydrophilic and can be dispersed in water (as it is in this dispersion).

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Graphene Oxide Dispersion, 8 mg/mL, in H2O

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30 ml/38 € 60 ml/65 € 120 ml/120 € 500 ml/395 € 1000 ml/730 € Please contact us for quotes on larger quantities !!!

Graphene Oxide Dispersion

Purity: 99,5+%, 8 mg/mL, in H2O

Graphene Oxide (GO) is the oxidized form of graphene nanoplatelets. It can be reduced with various chemical or physical treatments. In many of the chemical exfoliation experiments graphene is synthesized by reducing graphene oxide which comes from chemically treated graphite powder. Graphene oxide is also an attractive material for electronics industry because of its semiconducting properties. Graphene oxide is generally hydrophilic and can be dispersed in water (as it is in this dispersion). The graphene oxide dispersions exhibited long-term stability and were made of sheets between a few hundred nanometers and a few micrometers large, similar to the case of graphene oxide dispersions in water. For applications requiring the highest uniformity in size and lowest prices, you can choose us to meet your needs.

Technical Properties:

Graphene Oxide Purity (%)	99,5+
Graphene Thickness (nm)	0,4-1,1 (single layer)
Diameter (µm)	1-5 µm
Appearance	Black Liquid
Concentration (wt‰)	8 (can be easily diluted)- 8 mg/mL
SPECIFIC SURFACE AREA (m²/g)	800-1600

TEM Image of NG01GO0501(Graphene Oxide Dispersion)

Applications:

Graphite oxide, formerly called graphitic oxide or graphitic acid, is a compound of carbon, oxygen, and hydrogen in variable ratios, obtained by treating graphite with strong oxidizers.
Graphene The maximally oxidized bulk product is a yellow solid with C:O ratio between 2.1 and 2.9, that retains the layer structure of graphite but with a much larger and irregular spacing.
Graphene The bulk material disperses in basic solutions to yield monomolecular sheets, known as graphene oxide by analogy to graphene, the single-layer form of graphite.
Graphene oxide sheets have been used to prepare strong paper-like materials, membranes, thin films, and composite materials.
Initially graphene oxide attracted substantial interest as a possible intermediate for the manufacture of graphene.
The graphene obtained by reduction of graphene oxide still has many chemical and structural defects which is a problem for some applications but an advantage for some others.

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Multi Walled Carbon Nanotubes Water Dispersion, 4 wt%, Purity: > 96%, OD: 3-13 nm, Length: 45 µm

DISPERSIONS, Carbon Nanotube Dispersions

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30 ml/76 € 60 ml/136 € 120 ml/246 € 500 ml/855 € Please contact us for quotes on larger quantities !!!

Multi Walled Carbon Nanotubes Water Dispersion

4 wt%, Purity: > 96+ %, OD: 3-13 nm, Length: 45 µm

Technical Properties:

Purity	> 96+ %
Color	black
Average Outside Diameter (nm)	3-13
Average Inside Diameter (nm)	3.0-5.0
Length (µm)	45
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	240
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template

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Multi Walled Carbon Nanotubes Ethanol Dispersion, 4 wt%, Purity: > 96%, OD: 3-13 nm, Length: 45 µm

DISPERSIONS, Carbon Nanotube Dispersions

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15 ml/251 € 30 ml/410 € 60 ml/710 € 120 ml/1150 € Please contact us for quotes on larger quantities !!!

Multi Walled Carbon Nanotubes Ethanol Dispersion

4 wt%, Purity: > 96+ %, OD: 3-13 nm, Length: 45 µm

Technical Properties:

Purity	> 96+ %
Color	black
Average Outside Diameter (nm)	3-13
Average Inside Diameter (nm)	3.0-5.0
Length (µm)	45
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	240
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template

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Multi Walled Carbon Nanotubes Isopropanol Dispersion, 4wt%, Purity: > 96%, OD: 4-12 nm, Length: 55 µm

DISPERSIONS, Carbon Nanotube Dispersions

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15 ml/252 € 30 ml/420 € 60 ml/706 € 120 ml/1080 €

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Multi Walled Carbon Nanotubes Isopropanol Dispersion

4 wt%, Purity: > 96+ %, OD: 4-12 nm, Length: 55 µm

Technical Properties:

Purity	> 96+ %
Color	black
Average Outside Diameter (nm)	4-12
Average Inside Diameter (nm)	3.0-5.0
Length (µm)	55
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	240
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template

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Multi Walled Carbon Nanotubes N-butanol Dispersion, 4 wt%, Purity: > 95%, OD: 8-16 nm, Length: 45 µm

DISPERSIONS, Carbon Nanotube Dispersions

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15 ml/250 € 30 ml/420 € 60 ml/720 € 120 ml/1215 €

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Multi Walled Carbon Nanotubes N-butanol Dispersion

4 wt%, Purity: > 95+ %, OD: 8-16 nm, Length: 45 µm

Technical Properties:

Purity	> 95+ %
Color	black
Average Outside Diameter (nm)	8-16
Average Inside Diameter (nm)	3.0-5.0
Length (µm)	45
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	240
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template

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Multi Walled Carbon Nanotubes N-Methyl-2-Pyrrolidinone Dispersion, 4 wt%, Purity: > 96%, OD: 4-13 nm, Length: 45 µm

DISPERSIONS, Carbon Nanotube Dispersions

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15 ml/250 € 30 ml/415 € 60 ml/705 € 120 ml/1010 €

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Multi Walled Carbon Nanotubes N-Methyl-2-Pyrrolidinone Dispersion

4 wt%, Purity: > 96+ %, OD: 4-13 nm, Length: 45 µm

Technical Properties:

Purity	> 96+ %
Color	black
Average Outside Diameter (nm)	4-13
Average Inside Diameter (nm)	3.0-5.0
Length (µm)	45
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	240
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template Please click for the MSDS

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Multi Walled Carbon Nanotubes Water Dispersion, 4 wt%, Purity: > 96%, OD: 18-28 nm, Length: 8-35 um

DISPERSIONS, Carbon Nanotube Dispersions

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30 ml/65 € 60 ml/120 € 120 ml/185 € 500 ml/660 € 1000 ml/1140 € Please contact us for quotes on larger quantities !!!

Multi Walled Carbon Nanotubes Water Dispersion

4 wt%, Purity: > 96+ %, OD: 18-28 nm, Length: 8-35 µm

Multi Walled Carbon NanoTubes Water Dispersion is obtained by dispersing MWCNT in deionized water without the addition of any surfactant. MWCNT water dispersions appear to have great industrial and medical potential. Dispersion of MWCNT in water is widely used inmass production because of its excellent mechanical and electrical properties. Our company sells multi walled carbon nanotubes water dispersion with various options.

Technical Properties:

Purity	>96+ %
Color	black
Average Outside Diameter (nm)	18-28
Average Inside Diameter (nm)	5.0-10.0
Length (µm)	8-35
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	120
Ash	<1.5 wt%
Electrical Conductivity (S/cm)	>98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in drug delivery, biosensors, CNT composites, catalysis, nanoprobes, hydrogen storage, lithium batteries, gas-discharge tubes, flat panel display, supercapacitor, transistors, solar cells, photoluminescence, template.

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Multi Walled Carbon Nanotubes Ethanol Dispersion, 3 wt%, Purity: > 95%, OD: 18-28 nm, Length: 8-28 µm

DISPERSIONS

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15 ml/250 € 30 ml/416 € 60 ml/720 € 120 ml/1200 €

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Multi Walled Carbon Nanotubes Ethanol Dispersion

3 wt%, Purity: > 95+ %, OD: 18-28 nm, Length: 8-28 µm

Technical Properties:

Purity	> 95+ wt%
Color	black
Average Outside Diameter (nm)	18-28
Average Inside Diameter (nm)	5.0-10.0
Length (µm)	8-28
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	120
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template

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Multi Walled Carbon Nanotubes Isopropanol Dispersion, 4 wt%, Purity: > 95%, OD: 18-35 nm, Length: 8-18 µm

DISPERSIONS, Carbon Nanotube Dispersions

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15 ml/252 € 30 ml/420 € 60 ml/725 € 120 ml/1115 €

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Multi Walled Carbon Nanotubes Isopropanol Dispersion

4 wt%, Purity: > 95+ %, OD: 18-35 nm, Length: 8-18 µm

Technical Properties:

Purity	> 95+ %
Color	black
Average Outside Diameter (nm)	18-35
Average Inside Diameter (nm)	5.0-10.0
Length (μm)	8-18
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	120
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include midicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug dilevery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium battaries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template

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Multi Walled Carbon Nanotubes N-butanol Dispersion, 4 wt%, Purity: > 96%, OD: 18-28 nm, Length: 8-18 µm

DISPERSIONS, Carbon Nanotube Dispersions

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15 ml/248 € 30 ml/415 € 60 ml/712 € 120 ml/1080 € Please contact us for quotes on larger quantities !!!

Multi Walled Carbon Nanotubes N-butanol Dispersion

4 wt%, Purity: > 96+ %, OD: 18-28 nm, Length: 8-18 µm

Technical Properties:

Purity	> 96+ %
Color	black
Average Outside Diameter (nm)	18-28
Average Inside Diameter (nm)	5.0-10.0
Length (μm)	8-18
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	120
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include midicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug dilevery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium battaries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template

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Multi Walled Carbon Nanotubes Water Dispersion, 4 wt%, Purity: > 96%, OD: 45-75 nm, Length: 8-18 µm

DISPERSIONS, Carbon Nanotube Dispersions

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15 ml/39 € 30 ml/59 € 60 ml/109 € 120 ml/164 € Please contact us for quotes on larger quantities !!!

Multi Walled Carbon Nanotubes Water Dispersion

4 wt%, Purity: > 96+ %, OD: 45-75 nm, Length: 8-18 µm

Technical Properties:

Purity	> 96+ %
Color	black
Average Outside Diameter (nm)	45-75
Average Inside Diameter (nm)	5.0-10.0
Length (μm)	8-18
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	50
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include midicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug dilevery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium battaries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template

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Multi Walled Carbon Nanotubes Ethanol Dispersion, 4 wt%, Purity: > 96 %, OD: 45-75 nm,Length 8-28 µm

DISPERSIONS, Carbon Nanotube Dispersions

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15 ml/252 € 30 ml/420 € 60 ml/720 € 120 ml/1150 €

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Multi Walled Carbon Nanotubes Ethanol Dispersion

4 wt%, Purity: > 96+ %, OD: 45-75 nm, Length 8-28 µm

Technical Properties:

Purity	> 96+ %
Color	black
Average Outside Diameter (nm)	45-75
Average Inside Diameter (nm)	5.0-10.0
Length (μm)	8-28
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	50
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include midicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug dilevery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium battaries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template

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Multi Walled Carbon Nanotubes Isopropanol Dispersion, 4 wt%, Purity: >96%, OD: 45-75 nm, Length 8-28 µm (No reviews

DISPERSIONS, Carbon Nanotube Dispersions

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15 ml/140 € 30 ml/245 € 60 ml/410 € 120 ml/695 €

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Multi Walled Carbon Nanotubes Isopropanol Dispersion

4 wt%, Purity: >96+%, OD: 45-75 nm, Length 8-28 µm

Technical Properties:

Purity	> 96%
Color	black
Average Outside Diameter (nm)	45-75
Average Inside Diameter (nm)	5.0-10.0
Length (μm)	8-28
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	50
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include midicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium battaries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-template

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Multi Walled Carbon Nanotubes N-butanol Dispersion, 4 wt%, Purity: >96%, OD: 45-75 nm, Length 8-28 µm

DISPERSIONS, Carbon Nanotube Dispersions

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15 ml/140 € 30 ml/245 € 60 ml/385 € 120 ml/682 €

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Multi Walled Carbon Nanotubes N-butanol Dispersion

4 wt%, Purity: >96+%, OD: 45-75 nm, Length 8-28 µm

Technical Properties:

Purity	>96 %
Color	black
Average Outside Diameter (nm)	45-75
Average Inside Diameter (nm)	5.0-10.0
Length (μm)	8-28
Tap Density (g/cm3)	0.30
True Density (g/cm3)	2.4
Specific Surface Area (m2/g)	50
Ash	< 1.5 wt%
Electrical Conductivity (S/cm)	> 98
Manufacturing Method	CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include midicine, mechanical, electric, chemical, energy and others. It can be applied in, 1-drug dilevery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium battaries, 8-gas-discharge tubes, 9-flat panel display, 10-supercapacitor, 11-transistors, 12-solar cells, 13-photoluminescence, 14-tamplate

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Carbon Nanotubes Thermal Radiation Coating Dispersion

DISPERSIONS, Carbon Nanotube Dispersions

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30 ml/57 € 60 ml/97 € 120 ml/165 € 500 ml/408 € 1000 ml/663 €

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Carbon Nanotubes Thermal Radiation Coating Dispersion

Technical Properties:

Film-forming Resin Coating	Waterborne Polyurethane
CNT Content	4 wt%
Paint Dry Condition (°C)	75-85
Recommended Coating Thickness (um)	5.0-10.0
Emissivity Coating (%)	0.96-0.98
Coating Surface Resistivity (Ω)	10⁴-10⁶
Thermal Conductivity (W/m.K)	1.4-2.0
Coating Hardness	HB
Coating adhesion (level)	5B

Applications:

Carbon nanotubes are one of the best thermal conductivity materials. They can form very thin coatings with very small thermal resistance. Carbon nanotubes thermal radiation coating dispersion can be applied to copper foil, aluminum plate, LED lamp base, and electrical enclosure cooling.

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Carbon Nanotube-Mica Prepared by Electrostatic Adsorption, CNTs: 15 wt%; Mica: 85 wt%

DISPERSIONS, Carbon Nanotube Dispersions

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5 grams/83 € 25 grams/168 € 100 grams/423 €

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Carbon Nanotube-Mica Prepared by Electrostatic Adsorption

CNTs: 15 wt%; Mica: 85 wt%

Technical Properties:

Carbon Nanotubes
Purity	>95 wt%
Outside Diameter (nm)	>50
Inside Diameter (nm)	5.0-15.0
Length (μm)	5.0-20.0
Manufacturing Method	CVD
Color	black
CNTs 10 wt%; Mica 90 wt%
Specific Surface Area (m2/g)	10
Volume Resistivity (Ω.cm)	<5

Applications:

Mica is a layered structure of potassium aluminum silicate, the surface of Mica is negatively charged. Carbon nanotubes are treated with cationic surfactant (Cetyl trimethyl ammonium bromide). Carbon Nanotube-Mica self assemble by electrostatic adsorption forming uniform and stable complex. It is easy to disperse and has good static conductive properties. It also show excellent mechanical and corrosion resistance properties. It can be used in petrochemical industry, coal industry and many coating.

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Carbon Nanotube-TiO2 Prepared by Electrostatic Adsorption, CNTs: 15 wt%, TiO2-rutile: 85 wt%

DISPERSIONS, Carbon Nanotube Dispersions

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5 grams/83 € 25 grams/168 € 100 grams/498 €

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Carbon Nanotube-TiO2 Prepared by Electrostatic Adsorption

CNTs: 15 wt%, TiO2-rutile: 85 wt%

Technical Properties:

Carbon Nanotubes
Purity	> 95 wt%
Outside Diameter (nm)	> 50
Inside Diameter (nm)	5.0-15.0
Length (μm)	5.0-20.0
Manufacturing Method	CVD
Color	black
TiO2 (Rutile) Nanoparticles
Average Particle Size (nm)	100-300
Shape	spherical
CNTs 10 wt%, TiO2-rutile 90 wt%
Specific Surface Area (m2/g)	15,5
Volume Resistivity (Ω.cm)	<5

Applications:

Carbon Nanotube-TiO2 is prepared by electrostatic interactions. Carbon nanotubes are treated by cationic surfactant (Cetyl trimethyl ammonium bromide). TiO2 rutile and CNTs self-assemble to form a uniform and stable complex. It is easy to disperse and has good static conductive properties. It also show excellent mechanical and corrosion resistance properties. It can be used in petrochemical industry, coal industry and many coating fields.

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Carbon Nanotube-TiO2 Prepared by Electrostatic Adsorption, CNTs: 25 wt%, TiO2-rutile: 75 wt%

DISPERSIONS, Carbon Nanotube Dispersions

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5 grams/109 € 25 grams/219 € 100 grams/499 €

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Carbon Nanotube-TiO2 Prepared by Electrostatic Adsorption

CNTs: 25 wt%, TiO2-rutile: 75 wt%

Technical Properties:

Carbon Nanotubes
Purity	> 95 wt%
Outside Diameter (nm)	>50
Inside Diameter (nm)	5.0-15.0
Length (μm)	5.0-20.0
Manufacturing Method	CVD
Color	black
TiO2 (Rutile) Nanoparticles
Average Particle Size (nm)	100-300
Shape	spherical
CNTs 20 wt%, TiO2-rutile 80 wt%
Specific Surface Area (m2/g)	18,5
Volume Resistivity (Ω.cm)	<2

Applications:

Carbon Nanotube-TiO2 is prepared by electrostatic interactions. Carbon nanotubes are treated by cationic surfactant (Cetyl trimethyl ammonium bromide). TiO2 rutile and CNTs self-assemble to form a uniform and stable complex. It is easy to disperse and has good static conductive properties. It also show excellent mechanical and corrosion resistance properties. It can be used in petrochemical industry, coal industry and many coating fields.

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Carbon Nanotube-Carbon Black Prepared by Electrostatic Adsorption, CNTs: 34.4 wt%, Carbon Black: 65.6 wt%

DISPERSIONS, Carbon Nanotube Dispersions

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5 grams/134 € 25 grams/253 € 100 grams/568 €

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Carbon Nanotube-Black Carbon Prepared by Electrostatic Adsorption

CNTs: 34.4 wt%, Carbon Black: 65.6 wt%

Technical Properties:

Carbon Nanotubes	> 95 wt%
Purity	>50
Outside Diameter (nm)	5.0-15.0
Inside Diameter (nm)	5.0-20.0
Length (μm)	CVD
Color	black
Super Conductive Black Carbon Nanoparticles
Average Particle Size (nm)	50-100
Shape	spherical
CNTs 33.3 wt%, Carbon Black 66.7 wt%
Specific Surface Area (m2/g)	560
Volume Resistivity (Ω.cm)	<1
Volume Resistivity Content Relationship
CNTs Content wt%	0.00	25.00	33.30	60.00
Volume Resistivity (Ω·cm)	0.2150	0.1544	0.1332	0.1198

Applications:

Super conductive black carbon nanoparticles surface is usually negatively charged. Carbon nanotubes are treated with cationic surfactant (Cetyl trimethyl ammonium bromide). Carbon nanotubes and black carbon self assemble to form a uniform stable complex. The complex shows high strength and conductivity which makes it suitable for processing into conductive plastics, conductive sheets, and films.

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Polymer Dispersant for Dispersion of Carbon Nanotubes (CNTs) in Ester Solvents

DISPERSIONS, Carbon Nanotube Dispersions

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5 grams/38 € 25 grams/89 € 100 grams/335 €

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Polymer Dispersant for Dispersion of Carbon Nanotubes (CNTs) in Ester Solvents

Technical Properties:

The dispersant material is a polymer in a solvent mixture. It is suitable for the dispersion of carbon nanotubes in solvents such as ethhyl acetate, butyl acetate, epoxy resin (in liquid form) etc. Dispersion volume and concentration should be considered for an ideal dispersion and amount of dispersant that will be used.

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Indium Arsenide (InAs) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

INDIUM ARSENIDE (INAS) WAFERS, 3", Silicon Wafers & Semiconductor Wafers

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1 piece/840 € 5 pieces/3960 € Please contact us for quotes on larger quantities !!!

Indium Arsenide (InAs) Wafers

Size: 3”, Thickness: 625± 25 μm , Orientation: 100

Technical Properties:

Quality	EPI-Ready
Size (inch)	3”
Thickness (μm)	625± 25
Polished	Single Side
Dopant	Zinc/Sulphur (Zn/S, N Type)
Orientation	100
Mobility	6000-20000
EPD	≤50000
Growth method	VGF
OF Length	22±2
IF Length	11±1

Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound. Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material. Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source. They can be supplied in n type, p type or semi insulating forms with different orientations. Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.

Indium arsenide (InAs) wafer is used for infrared detectors.
Indium arsenide (InAs) wafer is used for mil specs.
Indium arsenide (InAs) wafer is used for foods.
Indium arsenide (InAs) wafer is used for optical grades.
Diode lasers are also made using indium arsenide (InAs) wafer.

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Indium Arsenide (InAs) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

INDIUM ARSENIDE (INAS) WAFERS, 2", Silicon Wafers & Semiconductor Wafers

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1 piece/545 € 5 pieces/2490 € Please contact us for quotes on larger quantities !!!

Indium Arsenide (InAs) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality	EPI-Ready
Size (inch)	2”
Thickness (μm)	500± 25
Polished	Single Side
Dopant	Zinc/Sulphur (Zn/S, N Type)
Orientation	100
Mobility	6000-20000
EPD	≤50000
Growth method	VGF
OF Length	16±2
IF Length	8±1

Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound. Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material. Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source. They can be supplied in n type, p type or semi insulating forms with different orientations. Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.

Indium arsenide (InAs) wafer is used for infrared detectors.
Indium arsenide (InAs) wafer is used for mil specs.
Indium arsenide (InAs) wafer is used for foods.
Indium arsenide (InAs) wafer is used for optical grades.
Diode lasers are also made using indium arsenide (InAs) wafer.

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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm

Silicon Wafers & Semiconductor Wafers, SI + SINX WAFERS, 4"

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1 piece/55 € 5 pieces/245 € 25 pieces/1125 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 150 nm

Technical Properties:

Quality	Prime
Materials	Si+Si₃N₄
Size (inch)	4”
Orientation	(100)
Coating	150 nm
Thickness (μm)	381± 25
Doping	Boron
Resistivity (ohm.cm)	1-10
Polished	Double Side

Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

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Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

SI + SINX WAFERS, 4", Silicon Wafers & Semiconductor Wafers

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1 piece/92 € 5 pieces/420 € 25 pieces/1975 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm

Technical Properties:

Quality	Prime
Materials	Si+Si₃N₄
Size (inch)	4”
Orientation	(100)
Coating	1000 nm
Thickness (μm)	380± 15
Doping	Boron
Resistivity (ohm.cm)	1-10
Polished	Double Side

Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 70 nm

SI + SINX WAFERS, 4", Silicon Wafers & Semiconductor Wafers

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V 1 piece/62 € 5 pieces/270 € 25 pieces/1225 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 70 nm

Technical Properties:

Quality	Prime
Materials	Si+Si₃N₄
Size (inch)	4”
Orientation	(100)
Coating	70 nm
Thickness (μm)	525± 25
Doping	Boron
Resistivity (ohm.cm)	1-10
Polished	Double Side

Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

SI + SINX WAFERS, 4", Silicon Wafers & Semiconductor Wafers

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1 piece/64 € 5 pieces/280 € 25 pieces/1300 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm

Technical Properties:

Quality	Prime
Materials	Si+Si₃N₄
Size (inch)	4”
Orientation	(100)
Coating	150 nm
Thickness (μm)	525± 25
Doping	Boron
Resistivity (ohm.cm)	1-10
Polished	Double Side

Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

SI + SINX WAFERS, 4", Silicon Wafers & Semiconductor Wafers

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1 piece/69 € 5 pieces/310 € 25 pieces/1450 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm

Technical Properties:

Quality	Prime
Materials	Si+Si₃N₄
Size (inch)	4”
Orientation	(100)
Coating	450 nm
Thickness (μm)	525± 25
Doping	Arsenic
Resistivity (ohm.cm)	0,001-0,005
Polished	One Side

Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

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Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 150 nm

SI + SINX WAFERS, 3", Silicon Wafers & Semiconductor Wafers

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1 piece/58 € 5 pieces/245 € 25 pieces/1125 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 150 nm

Technical Properties:

Quality	Prime
Materials	Si+Si₃N₄
Size(inch)	3”
Orientation	(100)
Coating	150 nm
Thickness (μm)	381± 25
Doping	Boron
Resistivity (ohm.cm)	1-10
Polished	Double Side

Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

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Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm

SI + SINX WAFERS, 3", Silicon Wafers & Semiconductor Wafers

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1 piece/66 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 300 nm

Technical Properties:

Quality	Prime
Materials	Si+Si₃N₄
Size (inch)	3”
Orientation	(100)
Coating	300 nm
Thickness (μm)	381± 25
Doping	Boron
Resistivity (ohm.cm)	1-10
Polished	Double Side

Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

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Silicon on Insulator (SOI) Wafers, Size: 8”, Device Thickness: 300 nm, P type

Silicon Wafers & Semiconductor Wafers, SILICON ON INSULATOR (SOI) WAFERS, 8"

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1 piece/956 € 5 pieces/4460 € Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 8'', Device Thickness: 300 nm, P type

Technical Properties:

Size (inch)	8”
Thickness (μm)	725
Resistivity	1-100 ohm.cm
Grade	Prime
Dopant	P type (Boron doped )
Orientation	100
Device Thickness	300 nm
Device Resistivity	1-100 ohm.cm
Device Type	P type (Boron doped )
Device Orientation	100
BOX Thickness	500 nm

Fields of Application for Silicon on Insulator (SOI) Wafer

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.

Silicon on insulator (SOI) wafer is used in silicon photonics.
Silicon on insulator (SOI) wafer is used in microelectronic devices.
Silicon on insulator (SOI) wafer is used for radio frequency (RF).

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Silicon on Insulator (SOI) Wafers, Size: 8”, Device Thickness: 600 nm, P type

SILICON ON INSULATOR (SOI) WAFERS, 8", Silicon Wafers & Semiconductor Wafers

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1 piece/960 € 5 pieces/4470 € Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 8'', Device Thickness: 600 nm, P type

Technical Properties:

Size (inch)	8”
Thickness (μm)	725
Resistivity	1-100 ohm.cm
Grade	Prime
Dopant	P type (Boron doped )
Orientation	100
Device Thickness	600 nm
Device Resistivity	1-100 ohm.cm
Device Type	P type (Boron doped )
Device Orientation	100
BOX Thickness	2000 nm

Fields of Application for Silicon on Insulator (SOI) Wafer

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.

Silicon on insulator (SOI) wafer is used in silicon photonics.
Silicon on insulator (SOI) wafer is used in microelectronic devices.
Silicon on insulator (SOI) wafer is used for radio frequency (RF).

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Silicon on Insulator (SOI) Wafers, Size: 6”, Device Thickness: 625 nm, P type

SILICON ON INSULATOR (SOI) WAFERS, 6", Silicon Wafers & Semiconductor Wafers

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1 piece/940 € 5 pieces/4450 € Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 6'', Device Thickness: 625 nm, P type

Technical Properties:

Size (inch)	6”
Thickness (μm)	625
Resistivity	1-20 ohm.cm
Grade	Prime
Dopant	P type (Boron doped)
Orientation	100
Device Thickness	220 nm
Device Resistivity	1-20 ohm.cm
Device Type	P type (Boron doped)
Device Orientation	100
BOX Thickness	1.5 um

Fields of Application for Silicon on Insulator (SOI) Wafer:

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.

Silicon on insulator (SOI) wafer is used in silicon photonics.
Silicon on insulator (SOI) wafer is used in microelectronic devices.
Silicon on insulator (SOI) wafer is used for radio frequency (RF).

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Silicon on Insulator (SOI) Wafers, Size: 6”, Device Thickness: 340 nm, P type

SILICON ON INSULATOR (SOI) WAFERS, 6", Silicon Wafers & Semiconductor Wafers

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1 piece/945 € 5 pieces/4475 € Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 6'', Device Thickness: 340 nm, P type

Technical Properties:

Size (inch)	6”
Thickness (μm)	625
Resistivity	1-20 ohm.cm
Grade	Prime
Dopant	P type (Boron doped )
Orientation	100
Device Thickness	340 nm
Device Resistivity	1-20 ohm.cm
Device Type	P type (Boron doped )
Device Orientation	100
BOX Thickness	2 um

Fields of Application for Silicon on Insulator (SOI) Wafer

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.

Silicon on insulator (SOI) wafer is used in silicon photonics.
Silicon on insulator (SOI) wafer is used in microelectronic devices.
Silicon on insulator (SOI) wafer is used for radio frequency (RF).

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Silicon on Insulator (SOI) Wafers, Size: 4”, Thickness: 725 μm, P type (Boron doped)

SILICON ON INSULATOR (SOI) WAFERS, 4", Silicon Wafers & Semiconductor Wafers

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1 piece/690 € 5 pieces/3280 € Please ask for stock status before placing an order on wafer products Please contact us for quotes on larger quantities !!!

Silicon on Insulator (SOI) Wafers

Size: 4'', Thickness: 750 μm, P type (Boron doped)

Technical Properties:

Size (inch)	4”
Thickness (μm)	725
Resistivity	1-100 ohm.cm
Grade	Prime
Dopant	P type (Boron doped )
Orientation	100
Device Thickness	300 nm
Device Resistivity	1-100 ohm.cm
Device Type	P type (Boron doped )
Device Orientation	100
BOX Thickness	500 nm

Fields of Application for Silicon on Insulator (SOI) Wafer

Silicon on insulator (SOI) wafer is obtained with the addition of insulating layer. Silicon on insulator (SOI) wafer is placed between silicon substrate and an upper layer of silicon. The fundamental aim of using silicon on insulator (SOI) wafer is to increase the performance of the conventional silicon wafer by decreasing electrical losses. In case of reducing power and heat while increasing the speed performance of a device silicon on insulator (SOI) wafer is helpful. Best insulation depends on the application aims, for instance silicon dioxide is the most common insulator in microelectronics since it has ability to reduce short-channel effects. Silicon on insulator (SOI) wafer has reduced temperature dependency due to no doping and better yield due to high density. Silicon on insulator wafers helps to reduce the heat and increase the speed. Are the most common wafers for integrated circuit production. Mainly used where traditional silicon wafers are ineffective. High density of SOI wafers increases the utilization of such products. SOI wafers are commonly used in silicon photonics. The silicon layer on insulator can be used to fabricate optical waveguides and other optical devices, either passive or active (e.g. through suitable implantations). The buried insulator enables propagation of infrared light in the silicon layer on the basis of total internal reflection. The top surface of the waveguides can be either left uncovered and exposed to air (e.g. for sensing applications), or covered with a cladding, typically made of silica.

Silicon on insulator (SOI) wafer is used in silicon photonics.
Silicon on insulator (SOI) wafer is used in microelectronic devices.
Silicon on insulator (SOI) wafer is used for radio frequency (RF).

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Silicon Carbide Wafer (SiC-6H) – 6H , Size: 2”, Thickness: 350 μm, Dummy Grade, Usable Area: 95%

SILICON CARBIDE WAFER ( SIC-6H ) - 6H, 2"

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1 piece/495 € 5 pieces/2190 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-6H) - 6H

Size: 2'', Thickness: 350 μm, Usable Area: 95%

Technical Properties:

Quality	Dummy Grade
Size (inch)	2”
Thickness (μm)	350
Ra	≤1
Usable Area	95%
Orientation	<0001>±0.5°
Resistivity	0.02 ~0.1 Ω·cm
TTV	≤25
Bow	≤30
Warp	≤45
OF Length	15.9±1.7
IF Length	8±1.7

Fields of Application for Silicon Carbide (SiC-6H)- 6H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-6H) - 6H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 80%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 4", Silicon Wafers & Semiconductor Wafers

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1 piece/495 € 5 pieces/2280 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Quality	Mechanical Grade
Size (inch)	4”
Thickness (μm)	350
Ra	≤1
4H area	80%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤25
Bow	≤30
Warp	≤45
OF Length	32.5±2
IF Length	18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Mechanical Grade, 4H Area: 100%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 4", Silicon Wafers & Semiconductor Wafers

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1 piece/545 € 5 pieces/2485 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Quality	Mechanical Grade
Size (inch)	4”
Thickness (μm)	350
Ra	≤0.3
4H area	100%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤10
Bow	≤10
Warp	≤25
OF Length	32.5±2
IF Length	18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Silicon Carbide Wafer (SiC-4H)- 4H , Size: 4”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 4", Silicon Wafers & Semiconductor Wafers

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1 piece/485 € 5 pieces/2260 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 4'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Dummy Grade
Size (inch)	4”
Thickness (μm)	350
Ra	≤0.3
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤15
Bow	≤25
Warp	≤35
OF Length	32.5±2
IF Length	18±2

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 4”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 4", Silicon Wafers & Semiconductor Wafers

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1 piece/750 € 5 pieces/3690 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)- 4H

Size: 4'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Testing Grade
Size (inch)	4”
Thickness (μm)	350
Ra	≤0.3
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤25
Bow	≤30
Warp	≤35
OF Length	32.5±2
IF Length	18±2

Fields of Application for Silicon Carbide (SiC-4H) - 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Dummy Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 3", Silicon Wafers & Semiconductor Wafers

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1 piece/390 € 5 pieces/1790 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Dummy Grade
Size (inch)	3”
Thickness (μm)	350
Ra	≤0.3
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤15
Bow	≤25
Warp	≤35
OF Length	22.0±2.0
IF Length	11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H)- 4H wafer has superior electronic properties, silicon carbide (SiC-6H)– 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Testing Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 3", Silicon Wafers & Semiconductor Wafers

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V 1 piece/385 € 5 pieces/1745 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Testing Grade
Size (inch)	3”
Thickness (μm)	350
Ra	≤0.3
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤25
Bow	≤30
Warp	≤35
OF Length	22.0±2.0
IF Length	11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Production Grade, 4H Area: 100%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 3", Silicon Wafers & Semiconductor Wafers

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1 piece/370 € 5 pieces/1690 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H)-4H

Size: 3'', Thickness: 350 μm, 4H Area: 100%

Technical Properties:

Quality	Production Grade
Size (inch)	3”
Thickness (μm)	350
Ra	≤0.3
4H area	100%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤15
Bow	≤10
Warp	≤25
OF Length	22.0±2.0
IF Length	11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 3”, Thickness: 350 μm, Research Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 3", Silicon Wafers & Semiconductor Wafers

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1 piece/780 € 5 pieces/3480 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 3'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Research Grade
Size (inch)	3”
Thickness (μm)	350
Ra	≤0.3
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤15
Bow	≤10
Warp	≤35
OF Length	22.0±2.0
IF Length	11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Silicon Carbide Wafer (SiC-4H)- 4H, Size: 2”, Thickness: 350 μm, Mechanical Grade, 4H Area: 95%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 2", Silicon Wafers & Semiconductor Wafers

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1 piece/380 € 5 pieces/1675 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 95%

Technical Properties:

Quality	Dummy Grade
Size (inch)	2”
Thickness (μm)	350
Ra	≤1
4H area	95%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤15
Bow	≤25
Warp	≤35
OF Length	16±2
IF Length	8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Testing Grade, 4H Area: 80%

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 2", Silicon Wafers & Semiconductor Wafers

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1 piece/380 € 5 pieces/1675 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'' , Thickness: 350 μm, 4H Area: 80%

Technical Properties:

Quality	Testing Grade
Size (inch)	2”
Thickness (μm)	350
Ra	≤1
4H area	80%
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤25
Bow	≤30
Warp	≤35
OF Length	16±2
IF Length	8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Silicon Carbide Wafer (SiC-4H) – 4H, Size: 2”, Thickness: 350 μm, Production Grade, 4H Area: 1

SILICON CARBIDE WAFER ( SIC-4H ) - 4H, 2", Silicon Wafers & Semiconductor Wafers

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1 piece/565 € 5 pieces/2480 € Please contact us for quotes on larger quantities !!!

Silicon Carbide Wafer (SiC-4H) - 4H

Size: 2'', Thickness: 350 μm, 4H Area: 1

Technical Properties:

Quality	Production Grade
Size (inch)	2”
Thickness (μm)	350
Ra	≤0.3
4H area	1
Orientation	4°±0.5°
Resistivity	0.015-0.03
TTV	≤10
Bow	≤10
Warp	≤25
OF Length	16±2
IF Length	8±1

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced. Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC) wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or cubic zirconia. Silicon carbide (SiC) crystals have unique physical and electronic properties. Silicon Carbide based devices have been used for short wavelength opto-electronic, high temperature, radiation resistant applications. The high-power and high-frequency electronic devices made with SiC are superior to Si and GaAs based devices. Below are some popular applications of SiC substrates. SiC based devices have low lattice mismatch with III-nitride epitaxial layers. They have high thermal conductivity and can be used for the monitoring of combustion processes and for all sorts of UV-detection. SiC-based semiconductor devices can work under very hostile environments, such as high temperature, high power, and high radiation conditions. SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to conventional Si-devices, SiC-based power devices have faster switching speed higher voltages, lower parasitic resistances, smaller size, less cooling required due to high-temperature capability. While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
Silicon carbide (SiC) wafer is used for green energy generation.
Silicon carbide (SiC) wafer is used for LEDs.
Silicon carbide (SiC) wafer is used for many other emerging markets.

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Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 100, EPI-Ready

GALLIUM ANTIMONIDE (GASB) WAFERS, 4", Silicon Wafers & Semiconductor Wafers

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1 piece/1180 € 5 pieces/4890 € Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 4”, Thickness: 1000± 25 μm, Orientation: 111

Technical Properties:

Quality	EPI-Ready
Size (inch)	4”
Thickness (μm)	1000± 25
Polished	Single Side
Dopant	Tellurium ( N type )
Orientation	100
Mobility	2000-3500
EPD	≤2000
Growth method	VGF
OF Length	32.5±2
IF Length	18±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.

Gallium antimonide (GaSb) is used for infrared detectors.
Gallium antimonide (GaSb) is used for infrared LEDs.
Gallium antimonide (GaSb) is used for transistors.
Gallium antimonide (GaSb) is used for lasers.
Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

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Gallium Antimonide (GaSb) Wafers, Size: 4”, Thickness: 1000± 25 μm, Orientation: 111, EPI-Ready (No reviews yet)

GALLIUM ANTIMONIDE (GASB) WAFERS, 4", Silicon Wafers & Semiconductor Wafers

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1 piece/1180 € 5 pieces/4890 € Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 4”, Thickness: 1000± 25 μm, Orientation: 111

Technical Properties:

Quality	EPI-Ready
Size (inch)	4”
Thickness (μm)	1000± 25
Polished	Single Side
Dopant	Tellurium ( N type )
Orientation	111
Mobility	2000-3500
EPD	≤2000
Growth method	VGF
OF Length	32.5±2
IF Length	18±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.

Gallium antimonide (GaSb) is used for infrared detectors.
Gallium antimonide (GaSb) is used for infrared LEDs.
Gallium antimonide (GaSb) is used for transistors.
Gallium antimonide (GaSb) is used for lasers.
Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

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Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

GALLIUM ANTIMONIDE (GASB) WAFERS, 3", Silicon Wafers & Semiconductor Wafers

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1 piece/845 € 5 pieces/3995 € Please contact us for quotes on larger quantities !!!

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 100

Technical Properties:

Quality	EPI-Ready
Size (inch)	3”
Thickness (μm)	625± 25
Polished	Single Side
Dopant	Tellurium ( N type )
Orientation	100
Mobility	2000-3500
EPD	≤2000
Growth method	VGF
OF Length	22±2
IF Length	11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt. Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds. Gallium antimonide (GaSb) is supplied in polished wafer form. Gallium antimonide (GaSb) wafers are produced from polycrystalline ingots with using Czochralski method to obtain a single crystal with perfect purity. Supplied in polished wafer form, gallium antimonide has a very high accuracy of orientation. Thickness and orientation of these wafers can be modified with additives. Czochralski method is used to provide the growh of pure gallium and antimonide elements. The natural low-defect structure of GaSb makes it a perfect material for epitaxial growth. They are supplied in polished 1 side or 2 sides and cut forms.

Gallium antimonide (GaSb) is used for infrared detectors.
Gallium antimonide (GaSb) is used for infrared LEDs.
Gallium antimonide (GaSb) is used for transistors.
Gallium antimonide (GaSb) is used for lasers.
Gallium antimonide (GaSb) is used for thermophotovoltaic systems.

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4 wt%, Purity: > 96+ %, OD: 45-75 nm, Length 8-28 µm

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4 wt%, Purity: >96+%, OD: 45-75 nm, Length 8-28 µm

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Multi Walled Carbon Nanotubes N-butanol Dispersion

4 wt%, Purity: >96+%, OD: 45-75 nm, Length 8-28 µm

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