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Prime CZ-Si Wafer, Size: 4”, Orientation: (111), Phosphor Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm

Price range: $44.10 through $761.25
Select options This product has multiple variants. The options may be chosen on the product page
Prime CZ-Si Wafer Size: 4”, Orientation: (111), Phosphor Doped, 1-Side Polished Technical Properties: Quality Prime Materials CZ-Si Size (inch) 4”
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Prime CZ-Si Wafer, Size: 4”, Orientation: (111), Phosphor Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm

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Price range: $47.00 through $811.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/42 € 5 pieces/170 € 25 pieces/725 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 4”, Orientation: (111), Phosphor Doped, 1-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (111)
Coating
Thickness (μm) 525 ± 25
Doping Phosphor
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
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Prime CZ-Si Wafer, Size: 6”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 525±25um

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Price range: $53.00 through $1,050.00
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Prime CZ-Si Wafer Size: 6”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525±25um Technical Properties: Quality Prime Materials CZ-Si Size (inch)
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Prime CZ-Si Wafer, Size: 6”, Orientation: (100), Phosphor Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 500±25um

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Price range: $52.00 through $975.00
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Prime CZ-Si Wafer Size: 6”, Orientation: (100), Phosphor Doped, 1-Side Polished, Thickness: 500±25um Technical Properties: Quality Prime Materials CZ-Si Size (inch)
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Prime CZ-Si Wafer, Size: 6”, Orientation: (111), Boron Doped, Resistivity: 1-10 (ohm.cm), 1-Side Polished, Thickness: 625±25um

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Price range: $49.00 through $925.00
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Prime CZ-Si Wafer Size: 6”, Orientation: (111), Boron Doped, 1-Side Polished, Thickness: 625±25um Technical Properties: Quality Prime Materials CZ-Si Size (inch)
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Prime CZ-Si Wafer, Size: 6”, Orientation: (111), Boron Doped, Resistivity: 1-2 (ohm.cm), 1-Side Polished, Thickness: 675 ± 15 μm

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Price range: $54.00 through $1,035.00
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1 piece/49 € 5 pieces/210 € 25 pieces/925 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 6”, Orientation: (111), Boron Doped, 1-Side Polished, Thickness: 675 ± 15 μm

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 6”
Orientation (111)
Coating  
Thickness (μm) 675 ± 15
Doping Boron
Resistivity (ohm.cm) 1-2
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
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Prime CZ-Si Wafer, Size: 6”, Orientation: (111), Phosphor Doped, Resistivity: 10-20 (ohm.cm), 1-Side Polished, Thickness: 675 ± 20 μm

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Price range: $58.00 through $1,091.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/52 € 5 pieces/220 € 25 pieces/975 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 6”, Orientation: (111), Phosphor Doped, 1-Side Polished, Thickness: 675 ± 20 μm

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 6”
Orientation (111)
Coating  
Thickness (μm) 675 ± 20
Doping Phosphor
Resistivity (ohm.cm) 10-20
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
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Prime CZ-Si Wafer, Size: 8”, Orientation: (100), Boron Doped, Resistivity: 1-100 (ohm.cm), 1-Side Polished, Thickness: 725 ± 25 μm

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Price range: $163.00 through $3,390.00
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Prime CZ-Si Wafer Size: 8”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 725 ± 25 μm Technical Properties: Quality Prime
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Prime CZ-Si Wafer, Size: 8”, Orientation: (100), Boron Doped, Resistivity: 1000-10000 (ohm.cm), 1-Side Polished, Thickness: 725 ± 25 μm

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Price range: $182.00 through $3,795.00
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1 piece/163 € 5 pieces/710 € 25 pieces/3390 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 8”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 725 ± 25 μm

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 8”
Orientation (100)
Coating  
Thickness (μm) 725 ± 25 μm
Doping Boron
Resistivity (ohm.cm) 1000-10000
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
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Prime CZ-Si Wafer, Size: 8”, Orientation: (100), Boron Doped, Resistivity: 6,5-9 (ohm.cm), 1-Side Polished, Thickness: 725 ± 20 μm

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Price range: $62.00 through $1,231.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/56 € 5 pieces/240 € 25 pieces/1100 € Please contact us for quotes on larger quantities !!! 

Prime CZ-Si Wafer

Size: 8”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 725 ± 20 μm

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 8”
Orientation (100)
Coating  
Thickness (μm) 725 ± 20 μm
Doping Boron
Resistivity (ohm.cm) 6,5-9
Polished One Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.
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Prime CZ-Si Wafer, Size: 8”, Orientation: (100), Phospor Doped, Resistivity: 0.001-0.005 (ohm.cm), 1-Side Polished, Thickness: 725 ± 20 μm

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Price range: $56.00 through $1,100.00
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Prime CZ-Si Wafer Size: 8”, Orientation: (100), Phospor Doped, 1-Side Polished, Thickness: 725 ± 20 μm Technical Properties: Quality Prime
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Prime FZ-Si Wafer, Size: 2”, Orientation: (100), Phosphor Doped, Resistivity: 7000 – 8000 (ohm.cm), 2-Side Polished, Thickness: 250 ± 15 μm

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Price range: $63.00 through $821.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/57 € 5 pieces/185 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 2”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 250 ± 15 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 2”
Orientation (100)
Coating
Thickness (μm) 250 ± 15
Doping Phosphor
Resistivity (ohm.cm) 7000 - 8000
Polished Double Side
                Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime FZ-Si Wafer, Size: 2”, Orientation: (100), Phosphor Doped, Resistivity: 7000 – 8000 (ohm.cm), 2-Side Polished, Thickness: 250 ± 15 μm

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Price range: $68.00 through $888.00
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Prime FZ-Si Wafer Size: 2”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 250 ± 15 μm Technical Properties: Quality Prime
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Prime FZ-Si Wafer, Size: 3”, Orientation: (100), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 380 ± 25 μm

Price range: $103.95 through $1,751.40
Select options This product has multiple variants. The options may be chosen on the product page
Prime FZ-Si Wafer Size: 3”, Orientation: (100), None Doped, 2-Side Polished, Thickness: 380 ± 25 μm Technical Properties: Quality Prime
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Prime FZ-Si Wafer, Size: 3”, Orientation: (100), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 380 ± 25 μm

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Price range: $92.00 through $1,543.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/83 € 5 pieces/310 € 25 pieces/1390 € Please contact us for quotes on larger quantities !!! 

Prime FZ-Si Wafer

Size: 3”, Orientation: (100), None Doped, 2-Side Polished, Thickness: 380 ± 25 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 3”
Orientation (100)
Coating  
Thickness (μm) 380 ± 25
Doping  
Resistivity (ohm.cm) 10000 - 100000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 2000 – 4000 (ohm.cm), 1-Side Polished, Thickness: 300 ± 10 μm

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Price range: $71.00 through $1,071.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/225 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 300 ± 10 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 300 ± 10
Doping Boron
Resistivity (ohm.cm) 2000 - 4000
Polished One Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 2000 – 4000 (ohm.cm), 1-Side Polished, Thickness: 300 ± 10 μm

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Price range: $76.00 through $1,158.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime FZ-Si Wafer Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 300 ± 10 μm Technical Properties: Quality Prime
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), None Doped, Resistivity: 1000 – 10000 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $95.00 through $1,578.00
Select options This product has multiple variants. The options may be chosen on the product page

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), None Doped, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 525 ± 25
Doping
Resistivity (ohm.cm) 1000 - 10000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), None Doped, Resistivity: 1000 – 10000 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm

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Price range: $87.00 through $1,459.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/79 € 5 pieces/295 € 25 pieces/1315 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), None Doped, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 525 ± 25
Doping
Resistivity (ohm.cm) 1000 - 10000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 3000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 200 ± 10 μm

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Price range: $89.00 through $1,515.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/81 € 5 pieces/305 € 25 pieces/1365 € Please contact us for quotes on larger quantities !!! 

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 200 ± 10 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 200 ± 10
Doping Phosphor
Resistivity (ohm.cm) 3000 - 100000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 3000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 200 ± 10 μm

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Price range: $97.00 through $1,638.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime FZ-Si Wafer Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 200 ± 10 μm Technical Properties: Quality Prime
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 5000 – 500000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 10 μm

Price range: $97.00 through $1,638.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime FZ-Si Wafer Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 300 ± 10 μm Technical Properties: Quality Prime
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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 5000 – 500000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 10 μm

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Price range: $89.00 through $1,515.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/81 € 5 pieces/305 € 25 pieces/1365 € Please contact us for quotes on larger quantities !!! 

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 300 ± 10 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 300 ± 10
Doping Phosphor
Resistivity (ohm.cm) 5000 - 500000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime FZ-Si Wafer, Size: 4”, Orientation: (111), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 20 μm

Price range: $79.00 through $1,620.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime FZ-Si Wafer Size: 4”, Orientation: (111), None Doped, 2-Side Polished, Thickness: 300 ± 20 μm Technical Properties: Quality Prime
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Prime FZ-Si Wafer, Size: 4”, Orientation: (111), None Doped, Resistivity: 10000 – 100000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 20 μm

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Price range: $73.00 through $1,498.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/66 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 4”, Orientation: (111), None Doped, 2-Side Polished, Thickness: 300 ± 20 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (111)
Coating  
Thickness (μm) 300 ± 20
Doping  
Resistivity (ohm.cm) 10000 - 100000
Polished Double Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.
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Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 150 nm

Price range: $60.90 through $1,181.25
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+Si3N4 Wafer Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 150 nm Technical Properties: Quality Prime
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Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 150 nm

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Price range: $63.00 through $1,240.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/58 € 5 pieces/245 € 25 pieces/1125 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size(inch) 3”
Orientation (100)
Coating 150 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
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Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm

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Price range: $75.00 through $1,620.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+Si3N4 Wafer Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 300 nm Technical Properties: Quality Prime
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Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm

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Price range: $72.00 through $1,488.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/66 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 3”
Orientation (100)
Coating 300 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
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Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

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Price range: $110.00 through $2,370.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm Technical Properties: Quality Prime
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Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm

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Price range: $101.00 through $2,178.00
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1 piece/92 € 5 pieces/420 € 25 pieces/1975 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 1000 nm
Thickness (μm) 380± 15
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

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Price range: $83.00 through $1,740.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm Technical Properties: Quality Prime Materials Si+Si3N4 Size (inch)
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

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Price range: $76.00 through $1,599.00
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1 piece/69 € 5 pieces/310 € 25 pieces/1450 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 450 nm
Thickness (μm) 525± 25
Doping Arsenic
Resistivity (ohm.cm) 0,001-0,005
Polished One Side
  Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm

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Price range: $66.00 through $1,350.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 150 nm Technical Properties: Quality Prime
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm

, ,
Price range: $60.00 through $1,240.00
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1 piece/55 € 5 pieces/245 € 25 pieces/1125 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 150 nm
Thickness (μm) 381± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

,
Price range: $77.00 through $1,560.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm Technical Properties: Quality Prime
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

, ,
Price range: $70.00 through $1,433.00
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1 piece/64 € 5 pieces/280 € 25 pieces/1300 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 150 nm
Thickness (μm) 525± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 70 nm

Price range: $78.00 through $1,544.00
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Prime Si+Si3N4 Wafer Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 70 nm Technical Properties: Quality Prime
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 70 nm

, ,
Price range: $68.00 through $1,350.00
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V 1 piece/62 € 5 pieces/270 € 25 pieces/1225 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 70 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 70 nm
Thickness (μm) 525± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
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Prime Si+SiO2 Wafer (dry), Size: 2”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

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Price range: $60.00 through $772.00
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1 piece/54 € 5 pieces/175 € 25 pieces/690 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (dry)

Size: 2”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 2”
Orientation (100)
Coating 100 nm
Thickness (μm) 279 ± 20
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Prime Si+SiO2 Wafer (dry), Size: 2”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

Price range: $69.00 through $870.00
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Prime Si+SiO2 Wafer (dry) Size: 2”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm
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Prime Si+SiO2 Wafer (dry), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

Price range: $57.75 through $1,071.00
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Prime Si+SiO2 Wafer (dry) Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm
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Prime Si+SiO2 Wafer (dry), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

, ,
Price range: $51.00 through $943.00
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1 piece/46 € 5 pieces/190 € 25 pieces/850 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 3”
Orientation (100)
Coating 100 nm
Thickness (μm) 380 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 100 nm

, ,
Price range: $71.00 through $1,071.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/225 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 100 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 4”
Orientation (100)
Coating 100 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 100 nm

,
Price range: $76.00 through $1,158.00
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Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

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Price range: $69.00 through $988.00
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1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 4”
Orientation (100)
Coating 200 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

,
Price range: $75.00 through $1,068.00
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Prime Si+SiO2 Wafer (dry) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm
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Prime Si+SiO2 Wafer (dry), Size: 6”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm

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Price range: $87.00 through $1,459.00
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1 piece/79 € 5 pieces/295 € 25 pieces/1315 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 6”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 6”
Orientation (100)
Coating 200 nm
Thickness (μm) 675 ± 15
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Prime Si+SiO2 Wafer (dry), Size: 6”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm

,
Price range: $95.00 through $1,578.00
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Prime Si+SiO2 Wafer (dry) Size: 6”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm
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Prime Si+SiO2 Wafer (wet), Size: 2”, Orientation: (111), Boron Doped, Resistivity: 1 -20 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

, ,
Price range: $63.00 through $828.00
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1 piece/57 € 5 pieces/185 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 2”, Orientation: (111), Boron Doped, 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 2”
Orientation (111)
Coating 500 nm
Thickness (μm) 500 ± 25
Doping Boron
Resistivity (ohm.cm) 1-20
Polished Double  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Prime Si+SiO2 Wafer (wet), Size: 2”, Orientation: (111), Boron Doped, Resistivity: 1 -20 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

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Price range: $68.00 through $888.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 2”, Orientation: (111), Boron Doped, 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm
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Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 300 nm

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Price range: $64.00 through $821.00
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1 piece/58 € 5 pieces/190 € 25 pieces/740 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 3”
Orientation (100)
Coating 300 nm
Thickness (μm) 380 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 300 nm

,
Price range: $69.00 through $888.00
Select options This product has multiple variants. The options may be chosen on the product page
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Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (111), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm

, ,
Price range: $67.00 through $960.00
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1 piece/61 € 5 pieces/205 € 25 pieces/865 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 3”, Orientation: (111), Boron Doped, 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 3”
Orientation (111)
Coating 500 nm
Thickness (μm) 581 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (111), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm

,
Price range: $73.00 through $966.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 3”, Orientation: (111), Boron Doped, 1-Side Polished, Thickness: 381 ± 25 μm, Coating 500 nm
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Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0.001 – 0.01 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

, ,
Price range: $71.00 through $1,071.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/64 € 5 pieces/265 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 500 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 0.001 - 0.01
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0.001 – 0.01 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

,
Price range: $76.00 through $1,158.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm
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Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

, ,
Price range: $78.00 through $1,237.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/71 € 5 pieces/255 € 25 pieces/1115 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 1500 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.
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Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

,
Price range: $85.00 through $1,338.00
Select options This product has multiple variants. The options may be chosen on the product page
Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm
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Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm

Price range: $79.00 through $1,122.00
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Prime Si+SiO2 Wafer (wet) Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm