Sort by
Filter by price
Filter
Show 9 12 18 24
IN718 Powder
Add to compare
Quick view
Add to wishlist

IN718 Powder

Read more
Product IN718 Powder
CAS No. N/A
Appearance Gray metallic powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 15-45 µm (Size Can be customized),  Ask for other available size range.
Ingredient Ni-Cr-Fe-Nb-Mo-Ti-Al
Molecular Weight N/A
Melting Point 1260-1336 °C
Boiling Point N/A
Density 8.19 g/cm³
Product Codes NCZ-131M
IN738 Powder 
Add to compare
Quick view
Add to wishlist

IN738 Powder 

Read more
Product IN738 Powder 
CAS No. N/A
Appearance Gray to metallic silver powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 15-45 µm (Size Can be customized),  Ask for other available size range.
Ingredient Ni-Cr-Co-Al-Ti-Mo-W-Nb-Ta-C
Molecular Weight N/A
Melting Point 1400°C
Boiling Point N/A
Density 8.15 g/cm³
Product Codes NCZ-132M
 
IN939 Powder
Add to compare
Quick view
Add to wishlist

IN939 Powder

Read more
Product IN939 Powder
CAS No. N/A
Appearance Gray metallic powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 15-45 µm (Size Can be customized),  Ask for other available size range.
Ingredient Ni-Cr-Co-Mo-Al-Ti-Nb-C
Molecular Weight N/A
Melting Point 1350-1400°C
Boiling Point N/A
Density 8.4 g/cm³
Product Codes NCZ-133M
Inconel 625 Powder
Add to compare
Quick view
Add to wishlist

Inconel 625 Powder

Read more
Product Inconel 625 Powder
CAS No. N/A
Appearance Silvery-gray metallic powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 15–45 µm (Size Can be customized),  Ask for other available size range.
Ingredient NiCrMoFeNb
Molecular Weight N/A
Melting Point 1290–1350°C
Boiling Point N/A
Density 8.44 g/cm³
Product Codes NCZ-161M
Inconel 718 Powder
Add to compare
Quick view
Add to wishlist

Inconel 718 Powder

Read more
Product Inconel 718 Powder
CAS No. N/A
Appearance Gray metallic spherical powder
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 15-45 µm (Size Can be customized),  Ask for other available size range.
Ingredient Ni-Cr-Fe-Nb-Mo-Ti-Al-C
Molecular Weight N/A
Melting Point 1260–1336 °C
Boiling Point N/A
Density 8.19 g/cm³
Product Codes NCZ-134M
 
Indium (III) antimonide, 99.999%
Add to compare
Quick view
Add to wishlist

Indium (III) antimonide, 99.999%

Price range: $70.00 through $290.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Indium (III) antimonide, 99.999%
CAS No. 1312-41-0
Appearance Dark grey to metallic crystals
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient InSb
Molecular Weight 236.58 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.775–5.78 g/cm³
Product Codes NCZ-157R
 
Indium (III) Oxide ( In2O3) 99.99% 4N Powder
Add to compare
Quick view
Add to wishlist

Indium (III) Oxide ( In2O3) 99.99% 4N Powder

Price range: $549.00 through $2,089.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Indium (III) Oxide ( In2O3) 99.99% 4N Powder
CAS No. 1312-43-8
Appearance White to pale yellow
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS 1–5µm (Size Can be customized),  Ask for other available size range.
Ingredient In2O3
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density 7.18 g/cm³
Product Codes NCZ-424I
Indium (III) Oxide ( In2O3) 99.999% 5N Powder
Add to compare
Quick view
Add to wishlist

Indium (III) Oxide ( In2O3) 99.999% 5N Powder

Price range: $249.00 through $2,302.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Indium (III) Oxide ( In2O3) 99.999% 5N Powder
CAS No. 1312-43-2
Appearance light yellow
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient In2O3
Molecular Weight N/A
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-428I
Indium (III) selinide, 99.99%
Add to compare
Quick view
Add to wishlist

Indium (III) selinide, 99.99%

Price range: $280.00 through $740.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Indium (III) selinide, 99.99%
CAS No. 12056-07-4
Appearance Silver-gray
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient In₂Se₃
Molecular Weight 466.52 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.67 g/cm³
Product Codes NCZ-156R
Indium (III) telluride, 99.999%
Add to compare
Quick view
Add to wishlist

Indium (III) telluride, 99.999%

Price range: $280.00 through $740.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Indium (III) telluride, 99.999%
CAS No. 1312-45-4
Appearance Blue to black cubic crystals
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient In₂Te₃
Molecular Weight 612.44 g/mol
Melting Point N/A
Boiling Point N/A
Density 5.8 g/cm³
Product Codes NCZ-158R
Add to compare
Quick view
Add to wishlist

Indium (In) Nanopowder/Nanoparticles, Purity: 99.995%, Size: 70 nm, Tetragonal

$514.00
Select options This product has multiple variants. The options may be chosen on the product page

Indium (In) Nanopowder/Nanoparticles

Purity: 99.995%, Size: 70 nm, Tetragonal

Technical Properties:

True Density (g/cm3) 7,3
Color black
Crystal Structure tetragonal
Average Particle Size (nm) 70
Specific Surface Area (m2/g) 14,9
Elemental Analysis In Cd Zn Pb Ti Others
≥99.995 ≤0.0015 ≤0.0015 ≤0.001 ≤0.001 ≤0.0007

Properties, Storage and Cautions:

Indium nanoparticles are highly reactive and flammable, therefore it should be handled with care and rapid moves, vibrations should be avoided. Nanopowder should be kept away from sunlight, any kind of heating, moisture and impacts. Coagulation of the particles is a serious problem, so, nanopowder should be sealed under vacuum and should be kept in cool and dry conditions. Air contact should be avoided.

Applications:

Indium is known for its low melting point (157 oC) and its electronic properties. It is mainly used in LCD panels, semiconductors, thin film solar cells, vacuum seals, heat sinks in microprocessors etc.
Indium (In) Sputtering Target
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Target

,
Price range: $139.00 through $787.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

 Indium (In) Sputtering Target

CAS No.

7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

156.6 °C

Boiling Point

 2,072 °C

Density

 7.31 g/cm³

Product Codes

NCZ-1293K
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.125”

, ,
$128.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

, ,
$154.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$174.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2233K
Indium (In) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$225.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2231K
Indium (In) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$299.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2229K
Indium (In) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$429.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2227K
Indium (In) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$490.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2225K
Indium (In) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$538.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2223K
Indium (In) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$662.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2221K
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.125”

, ,
$180.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$204.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.125''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2234K
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.250”

, ,
$264.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$302.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2232K
Indium (In) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$381.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2230K
Indium (In) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$433.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2228K
Indium (In) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$531.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2226K
Indium (In) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$736.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2224K
Indium (In) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$769.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2222K
Indium (In) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium (In) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$799.00
Add to cart

Product 

 Indium (In) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.
 7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 114.82 g/mol

Melting Point

  156.6 °C

Boiling Point

 2,072 °C

Density

  7.31 g/cm³

Product Codes

NCZ-2220K
Indium ACAC
Add to compare
Quick view
Add to wishlist

Indium ACAC

Price range: $23.00 through $143.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Indium ACAC
CAS No. 14405-45-9
Appearance White to light-yellow
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient In(C₅H₇O₂)₃
Molecular Weight 412.14 g/mol
Melting Point N/A
Boiling Point N/A
Density 1.41–1.52 g/cm³
Product Codes NCZ-276R
 
Add to compare
Quick view
Add to wishlist

Indium Arsenide (InAs) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

Price range: $784.00 through $3,585.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Arsenide (InAs) Wafers Size: 2”, Thickness: 500± 25 μm, Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  2” Thickness
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Indium Arsenide (InAs) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

, ,
Price range: $601.00 through $2,746.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/545 € 5 pieces/2490 €                           Please contact us for quotes on larger quantities !!!

Indium Arsenide (InAs) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  2”
Thickness (μm)  500± 25
Polished  Single Side
Dopant  Zinc/Sulphur (Zn/S, N Type)
Orientation  100
Mobility  6000-20000
EPD  ≤50000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound. Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material. Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source. They can be supplied in n type, p type or semi insulating forms with different orientations. Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
  • Indium arsenide (InAs) wafer is used for infrared detectors.
  • Indium arsenide (InAs) wafer  is used for mil specs.
  • Indium arsenide (InAs) wafer  is used for foods.
  • Indium arsenide (InAs) wafer  is used for optical grades.
  • Diode lasers are also made using indium arsenide (InAs) wafer.
Add to compare
Quick view
Add to wishlist

Indium Arsenide (InAs) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

Price range: $1,209.00 through $5,702.00
Select options This product has multiple variants. The options may be chosen on the product page
Indium Arsenide (InAs) Wafers Size: 3”, Thickness: 625± 25 μm , Orientation: 100 Technical Properties: Quality  EPI-Ready Size (inch)  3” Thickness (μm)
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Indium Arsenide (InAs) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

, ,
Price range: $926.00 through $4,367.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/840 € 5 pieces/3960 €                           Please contact us for quotes on larger quantities !!!

Indium Arsenide (InAs) Wafers

Size: 3”, Thickness: 625± 25 μm , Orientation: 100

Technical Properties:

Quality  EPI-Ready
Size (inch)  3”
Thickness (μm)  625± 25
Polished  Single Side
Dopant  Zinc/Sulphur (Zn/S, N Type)
Orientation  100
Mobility  6000-20000
EPD  ≤50000
Growth method  VGF
OF Length  22±2
IF Length   11±1

Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound. Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material. Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source. They can be supplied in n type, p type or semi insulating forms with different orientations. Indium arsenide, InAs, is a semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers.
  • Indium arsenide (InAs) wafer is used for infrared detectors.
  • Indium arsenide (InAs) wafer  is used for mil specs.
  • Indium arsenide (InAs) wafer  is used for foods.
  • Indium arsenide (InAs) wafer  is used for optical grades.
  • Diode lasers are also made using indium arsenide (InAs) wafer.
Indium Bonding on Cu Backing Plate for Sputtering Targets
Add to compare
Quick view
Add to wishlist

Indium Bonding on Cu Backing Plate for Sputtering Targets

Price range: $405.00 through $715.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Indium Bonding on Cu Backing Plate for Sputtering Targets
CAS No. 7440-74-6
Appearance Soft, silvery-white metal
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient In
Molecular Weight N/A
Melting Point 114.82 g/mol
Boiling Point N/A
Density 7.31 g/cm³
Product Codes NCZ-120H
Indium HFAC
Add to compare
Quick view
Add to wishlist

Indium HFAC

Price range: $26.00 through $160.00
Select options This product has multiple variants. The options may be chosen on the product page
Product Indium HFAC
CAS No. 34110-72-0 
Appearance Off-white to amber solid
Purity ≥99%,  ≥99.9%,  ≥95%(Other purities are also available)
APS N/A
Ingredient C₁₅H₃F₁₈InO₆
Molecular Weight 735.97 g/mol
Melting Point N/A
Boiling Point N/A
Density N/A
Product Codes NCZ-317R
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Indium Hydroxide (In(OH)3) Nanopowder/Nanoparticles, High Purity: 99.996%, Size: 15-65 nm

, ,
Price range: $52.00 through $213.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/46 € 
25 grams/67 € 100 grams/188 €                       
Please contact us for quotes on larger quantities !!! 

Indium Hydroxide (In(OH)3) Nanopowder/Nanoparticles

High Purity: 99.996%, Size: 15-65 nm

Applications:

Indium hydroxide nanoparticles are used as substitute for mercury as a battery inhibitor.
Indium Hydroxide Nanoparticles
Add to compare
Quick view
Add to wishlist

Indium Hydroxide Nanoparticles

$0.00
Add to cart

Indium Hydroxide Nanoparticles

Nano Indium Hydroxide powder

Indium Hydroxide nanopowder

MF: In(OH)3
Chemical Name: Indium Hydroxide
Purity: > 99.99%
APS: 55 nm (Size Customization possible)
Form: Nanopowder
Product Number: #NCZ3301
CAS Number 20661-21-6
Note: We supply different products of microparticles and Nanoparticles powder in all size range according to client’s requirements.
Placeholder
Placeholder
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Nanopowder/Nanoparticles, High Purity: 99.996%, Size: 18-68 nm

, ,
Price range: $62.00 through $306.00
Select options This product has multiple variants. The options may be chosen on the product page
5 grams/55 € 25 grams/110 € 100 grams/270 €                      
Please contact us for quotes on larger quantities !!!

Indium Oxide (In2O3) Nanopowder/Nanoparticles

High Purity: 99.996%, Size: 18-68 nm

Applications:

Indium oxide nanoparticles have applications in electronics. It is applied in flat panel displays, transparent conductive electrodes, detectors, and lasers. It is also used in gas sensors for ozone and nitrogen dioxide. Indium oxide nanoparticles are used as substitute for mercury as a battery inhibitor. It is also applied for optical and antistatic coatings.  
Indium Oxide (In2O3) Sputtering Target
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Target

,
Price range: $339.00 through $1,265.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

 Indium Oxide (In2O3) Sputtering Target

CAS No.

1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 277.64 g/mol

Melting Point

~1,910 °C

Boiling Point

~3,000 °C

Density

 ~7.18 g/cm³

Product Codes

NCZ-1316K
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

, ,
$252.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

, ,
$252.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 1”, Thickness: 0.250”

$288.00
Add to cart

Product 

 Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 1'', Thickness: 0.250''

CAS No.
 1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  277.64 g/mol

Melting Point

  ~1,910 °C

Boiling Point

 3,000 °C(approx., decomposes)

Density

 ~7.18 g/cm³ (sintered form)

Product Codes

NCZ-2219K
Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$543.00
Add to cart

Product 

 Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.125''

CAS No.
 1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  277.64 g/mol

Melting Point

  ~1,910 °C

Boiling Point

 3,000 °C(approx., decomposes)

Density

 ~7.18 g/cm³ (sintered form)

Product Codes

NCZ-2218K
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.125”

, ,
$470.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

$568.00
Add to cart

Product 

 Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 2'', Thickness: 0.250''

CAS No.
 1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  277.64 g/mol

Melting Point

  ~1,910 °C

Boiling Point

 3,000 °C(approx., decomposes)

Density

 ~7.18 g/cm³ (sintered form)

Product Codes

NCZ-2217K
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”

,
$492.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$857.00
Add to cart

Product 

 Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.125''

CAS No.
 1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  277.64 g/mol

Melting Point

  ~1,910 °C

Boiling Point

 3,000 °C(approx., decomposes)

Density

 ~7.18 g/cm³ (sintered form)

Product Codes

NCZ-2216K
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”

,
$740.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

$869.00
Add to cart

Product 

 Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 3'', Thickness: 0.250''

CAS No.
 1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  277.64 g/mol

Melting Point

  ~1,910 °C

Boiling Point

 3,000 °C(approx., decomposes)

Density

 ~7.18 g/cm³ (sintered form)

Product Codes

NCZ-2215K
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”

, ,
$750.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$876.00
Add to cart

Product 

 Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.125''

CAS No.
 1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  277.64 g/mol

Melting Point

  ~1,910 °C

Boiling Point

 3,000 °C(approx., decomposes)

Density

 ~7.18 g/cm³ (sintered form)

Product Codes

NCZ-2214K
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

, ,
$756.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$895.00
Add to cart

Product 

 Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 4'', Thickness: 0.250''

CAS No.
 1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

< 5 µm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  277.64 g/mol

Melting Point

  ~1,910 °C

Boiling Point

 3,000 °C(approx., decomposes)

Density

 ~7.18 g/cm³ (sintered form)

Product Codes

NCZ-2213K
Add to compare
Quick view
Add to wishlist

Indium Oxide (In2O3) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

, ,
$772.00
Add to cart

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Oxide Nanoparticles
Add to compare
Quick view
Add to wishlist

Indium Oxide Nanoparticles

$0.00
Add to cart

Indium Oxide Nanoparticles

Nano Indium Oxide powder

Indium Oxide Nanopowder

MF: In2O3
Chemical Name: Indium Oxide
Purity: > 99.99%
APS: 60 nm (Size Customization possible)
Form: Nanopowder
Product Number: #NCZ3501
CAS Number 1312-43-2
Note: We supply different products of microparticles and Nanoparticles powder in all size range according to client’s requirements.
Indium Oxide Nanoparticles/ Nanopowder (In2O3, 99.99+%, 20~70nm)
Add to compare
Quick view
Add to wishlist

Indium Oxide Nanoparticles/ Nanopowder (In2O3, 99.99+%, 20~70nm)

,
Price range: $77.00 through $415.00
Select options This product has multiple variants. The options may be chosen on the product page
$77/5g
$185/25g
$415/100g

Product 

 Indium Oxide Nanoparticles/ Nanopowder (In2O3, 99.99+%, 20~70nm)

CAS No.
1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

20~70nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

  277.64 g/mol

Melting Point

 ~1,910 °C

Boiling Point

~3,400 °C (sublimes/decomposes)

Density

 ~7.18 g/cm³

Product Codes

NCZ-1144K
Add to compare
Quick view
Add to wishlist

Indium Phosphide (InP) Wafers, Size: 2”, Thickness: 350± 25 μm, Orientation: 100, Single Side Polished, Testing Grade

, ,
Price range: $383.00 through $1,820.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/345 € 5 pieces/1640 €                           Please contact us for quotes on larger quantities !!!

Indium Phosphide (InP) Wafers

Size: 2'', Thickness: 350±25 μm, Orientation: 100

Technical Properties:

Size (inch)  2”
Thickness (μm)  350± 25
Dopant  Sulphur (N type)
Polished  Single Side
Mobility （1.5-3.5）E3
Orientation  100
EPD  ≤5000
Growth method  VGF
OF Length  16±2
IF Length   8±1

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. Indium phosphide (InP) has started to be developed at the beginning of 1980s. Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP) is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form. Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors. InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide. Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors. InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.
  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.