Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 70 nm

Price range: $68.00 through $1,350.00
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V 1 piece/62 € 5 pieces/270 € 25 pieces/1225 € Please contact us for quotes on larger quantities !!! 

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 70 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 70 nm
Thickness (μm) 525± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

Lithium Cobalt Oxide (LiCoO2) Powder for Li-ion Battery Cathode Application

Price range: $68.00 through $367.00
Select options This product has multiple variants. The options may be chosen on the product page
100 grams/68 €                     500 grams/245 €               

Spherical TC4 Titanium Based Micron Powder for 3d Printers, Ti6Al4V, 25-50 µm, Spherical

Price range: $68.00 through $3,555.00
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Application areas:

  • 3D Printing: Titanium is the strongest and the lightest material for 3d printing at the same time. It is used in the process called Direct Metal Laser Sintering (DMLS)
  • High tech fields: Space exploration, aeronautics, and medical field
  • Petrochemical
  • Shipbuilding
  • Automotive
  • Pharmaceutical
  • Manufacturing prostheses
  • Direct metal deposition
  • Binder jetting 3d printer technologies
  • Powder bed fusion
The most outstanding usages of 3D metal printing involve powder beds, streams of gas-propelled powder jets or wire for feedstock, lasers and electron beams as the energy sources, and precision automation equipment for digitally directing the energy source, the feedstock, or both along the material/energy deposition pathways. The composition of titanium alloy TC4 material is Ti-6Al-4V, and has good comprehensive mechanical and mechanical properties.

Graphite Fluoride (Carbon Monofluoride) Micron Powder for Li-ion Battery, 10-20 micron, F/C Ratio : 0.8-1.0

Price range: $68.00 through $2,060.00
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Graphite Fluoride (Carbon Monofluoride) Micron Powder for Li-ion Battery, 10-20 micron, F/C Ratio: 0.8-1.0 5 grams / 68 € 25

Prime Si+SiO2 Wafer (wet), Size: 2”, Orientation: (111), Boron Doped, Resistivity: 1 -20 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

Price range: $68.00 through $888.00
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Prime Si+SiO2 Wafer (wet) Size: 2”, Orientation: (111), Boron Doped, 2-Side Polished, Thickness: 500 ± 25 μm, Coating 500 nm

Prime FZ-Si Wafer, Size: 2”, Orientation: (100), Phosphor Doped, Resistivity: 7000 – 8000 (ohm.cm), 2-Side Polished, Thickness: 250 ± 15 μm

Price range: $68.00 through $888.00
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Prime FZ-Si Wafer Size: 2”, Orientation: (100), Phosphor Doped, 2-Side Polished, Thickness: 250 ± 15 μm Technical Properties: Quality Prime

Iron (II,III) Oxide (Fe3O4) Nanopowder/Nanoparticles Water Dispersion, Size: 13-18 nm, 22 wt%

Price range: $68.00 through $1,182.00
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Iron (II,III) Oxide (Fe3O4) Nanopowder/Nanoparticles Water Dispersion Size: 13-18 nm, 22 wt% Iron Oxide Water Dispersion has excellent properties like high

Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in Water, Anatase, Size: 25-45 nm, 42 wt%

Price range: $68.00 through $230.00
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Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in Water Anatase, Size: 25-45 nm, 42 wt%

Lithium Zirconate (Lithium Zirconium Oxide, Li2ZrO3), Purity: ≥99, Size: 1 -3 µm

Price range: $68.00 through $619.00
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APPLICATIONS
Lithium Zirconate is used in the manufacture of dielectric bodies based on zircon to obtain capacitors with special electrical properties, and also in insulators. It is used to improve thermal stability and also used for its fluxing properties.

Lithium Cobalt Oxide (LiCoO2) Powder for Li-ion Battery Cathode Application

Price range: $68.00 through $367.00
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100 grams/68 €                     500 grams/245 €               

Thulium Oxide (Tm2O3) Micron Powder, Purity: 99.99%, Size: 325 mesh

Price range: $68.00 through $1,155.00
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Applications:

Thulium oxide can be used in ceramics due to its stability. It also can be used in electronics and light weight structural components in aerospace applications. It can be used in fuel cells in which ionic conductivity is needed.   

Tin Nanoparticles/nanopowder ( Sn, 99.7%, 100nm)

Price range: $68.00 through $1,175.00
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$68/25g
$293/100g
$1175/500g

Product 

Tin Nanoparticles/nanopowder ( Sn, 99.7%, 100nm)

CAS No.

7440-31-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

100nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

118.71 g/mol

Melting Point

231.9 °C

Boiling Point

2,602 °C

Density

7.31 g/cm³

Product Codes

NCZ-1075K

Antimony Tin Oxide Nanoparticles/ Nanopowder (ATO, 99.9%, 40nm)

Price range: $68.00 through $465.00
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$68/25g
$135/100g
$285/500g
$465/1kg

Product 

Antimony Tin Oxide Nanoparticles/ Nanopowder (ATO, 99.9%, 40nm)

CAS No.

1332-09-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

40nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~153–170 g/mol

Melting Point

~1,100–1,300 °C

Boiling Point

N/A

Density

~6.5–7.2 g/cm³

Product Codes

NCZ-1180K

Antimony Tin Oxide Nanoparticles/ Nanopowder (ATO, 99.9%, <20nm)

Price range: $68.00 through $465.00
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$68/25g
$185/100g
$275/500g
$465/1kg

Product 

Antimony Tin Oxide Nanoparticles/ Nanopowder (ATO, 99.9%, <20nm)

CAS No.

1332-09-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

<20nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~150–180 g/mol

Melting Point

~1,100–1,300 °C

Boiling Point

N/A

Density

~6.5–7.2 g/cm³

Product Codes

NCZ-1181K

(-OH) Functionalized Graphitized Multi Walled Carbon Nanotubes, Purity: > 99.99%, Outside Diameter: 28-48 nm

Price range: $69.00 through $1,913.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Manganese (Mn) Micron Powder, Purity: 99.99 %, Size: 100 mesh

Price range: $69.00 through $3,246.00
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1 gram/62 € 5 grams/260 € 25 grams/865 € 100 grams/2880 €
Please contact us for quotes on larger quantities !!!

Manganese (Mn) Micron Powder

Purity: 99.99 %, Size: 100 mesh

Technical Properties:

PURITY

99.99 %

PARTICLE SIZE

100 Mesh

CAS

7439-96-5

MELTING POINT

1245 °C

BOILING POINT

2150 °C

CRYSTAL STRUCTURE

Cubic

DENSITY

7.43 g/cm³

COEFF. OF EXPANSION @ 20ºC

22 x 10⁻⁶

MOHS HARDNESS @ 20ºC

5

FORM  

Powder

APPLICATIONS

Alloys Ceramics Chemical reactions

                                    

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 400 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 400 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 400 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 – 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 300 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 2-Side Polished, Thickness: 500 ± 15 μm, Coating 300 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 500 ± 15 μm, Coating 300 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 300 nm
Thickness (μm) 500 ± 15
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

Price range: $69.00 through $988.00
Select options This product has multiple variants. The options may be chosen on the product page
1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 4”
Orientation (100)
Coating 200 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Aluminum Oxide (Al2O3) Nanopowder/Nanoparticles Dispersion in Ethylene Glycol, Size: 12 nm, Gamma, 18 wt%

Price range: $69.00 through $1,105.00
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Aluminum Oxide (Al2O3) Nanopowder/Nanoparticles Dispersion in Ethylene Glycol Size: 12 nm, Gamma, 18 wt%

Aluminum Oxide (Al2O3) Nanopowder/Nanoparticles Dispersion in 1, 2-Propanediol, Size: 12 nm, Gamma, 18 wt%

Price range: $69.00 through $1,105.00
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30 ml/69 € 60 ml/125 € 120 ml/235 € 500 ml/696 € 1000 ml/1105 €     Please contact us for quotes on larger quantities !!! Aluminum

Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in Water, Anatase, Size: 3-28 nm, 16 wt%

Price range: $69.00 through $198.00
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120 ml/69 € 500 ml/134 € 1000 ml/198 €  Please contact us for quotes on larger quantities !!! Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in Water Anatase, Size:

Lithium Iron Phosphate (LiFePO4) Powder for Li-ion Battery Cathode Application

Price range: $69.00 through $244.00
Select options This product has multiple variants. The options may be chosen on the product page
100 grams/69 €                      500 grams/173 €             

Prime Si+SiO2 Wafer (dry), Size: 2”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

Price range: $69.00 through $870.00
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Prime Si+SiO2 Wafer (dry) Size: 2”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

APPLICATION AREAs • Energy Storage, including Batteries and Fuel Cells • Conductive Paper • Conductive Liquid Dispersion • As a Catalyst Support • Antistatic and conductive applications

Price range: $69.00 through $244.00
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100 grams/69 €                      500 grams/173 €             

Zirconium Oxide Nanopowder/ Nanoparticles(ZrO2- 8Y, 99.9%, 0.8um)

Price range: $69.00 through $234.00
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$68/100g
$147/500g
$234/kg

Product 

Zirconium Oxide Nanopowder/ Nanoparticles(ZrO2- 8Y, 99.9%, 0.8um)

CAS No.

 1314-23-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

0.8um(Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~130.9 g/mol

Melting Point

~2,700 °C

Boiling Point

~4,300 °C

Density

~5.9 – 6.1 g/cm³

Product Codes

NCZ-1227K

Boron (B) Micron Powder, Purity: 99.95+%, Size: 1-2 µm

Price range: $70.00 through $1,189.00
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25 grams/62 € 100 grams/168 € 500 grams/720 € 1000 grams/1050 €
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Boron (B) Micron Powder

Purity: 99.95+%, Size: 1-2 µm

Technical Properties:

Bulk Density (g/cm3) 1,7
Color brown-black
Crystal Structure rhombohedral/hexagonal
Hardness 9,5 (Mohs Scale)
Tmelting (oC) 2400
Tboiling (oC) 2700
Average Particle Size (µm) 1,0-2,0
Elemental Analysis B Al Mn Fe Ca Cr Others
99.95 0.11 0.045 0.015 0.01 0.01 0.01
 

Prime CZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 0.05 – 0.152 (ohm.cm), 2-Side Polished, Thickness: 365 ± 15 μm

Price range: $70.00 through $996.00
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1 piece/63 € 5 pieces/210 € 25 pieces/890 € Please contact us for quotes on larger quantities !!!

Prime CZ-Si Wafer

Size: 4”, Orientation: (100), Phosphor Doped, 2-Side Polished

Technical Properties:

Quality Prime
Materials CZ-Si
Size (inch) 4”
Orientation (100)
Coating  
Thickness (μm) 365 ± 15
Doping Phosphor
Resistivity (ohm.cm) 0.05 - 0.152
Polished Double Side
Silicon is one of the most common elements on earths crust. Main usage of Silicon wafers is electronics and technology. Silicon wafers have very flat and mirror like surfaces. It is produced by Czochralski method to obtain the highest purity. Depending on the usage area, silicon wafers can be doped with different materials to tailor its purity accordingly. The amount and type of dopants highly affect the electronic properties. Galium, indium, boron and nitrogen are some of the dopants that can be used in production process. Silicon wafers are used in semiconductors, microchips, integrated circuits, smartphones, computers etc. Silicon is the key platform for semiconductor gadgets. A wafer is just but a thin slice of the semiconductor material that acts as a substratum for microelectronic devices fitted in and above the wafer.

Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

Price range: $70.00 through $1,433.00
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1 piece/64 € 5 pieces/280 € 25 pieces/1300 € Please contact us for quotes on larger quantities !!!

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm

Technical Properties:

Quality Prime
Materials Si+Si3N4
Size (inch) 4”
Orientation (100)
Coating 150 nm
Thickness (μm) 525± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished Double Side
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

Yttrium Aluminate (Y3Al5O12) Nanopowder/Nanoparticles, Purity: 99.7+%, Size: 25 nm

Price range: $70.00 through $278.00
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1 gram/65 € 
5 grams/255 €                       
Please contact us for quotes on larger quantities !!!

Yttrium Aluminate (Y3Al5O12) Nanopowder/Nanoparticles

Purity: 99.7+%, Size: 25 nm

Technical Properties:

Purity (%) 99.7
Average Particle Size (nm) 25
Color white
Morphology nearly spherical
Elemental Analysis La Sm Eu Gd Ce Fe Cu Ni Si Zn Pb Ca
0.006% 0.002% 0.007% 0.003% 0.003% 2 µg/g 3  µg/g 2 µg/g 8 µg/g 3  µg/g 4 µg/g 6 µg/g

Applications:

Yttrium Aluminum Oxide nanoparticles has applications in electronic devices. It is used in temperature sensors, P-type transparent conductive films, and counter electrodes. It is used as cathode materials for alkaline batteries. Its optical properties can be used in active optical filters, and automotive rear-view mirrors with adjustable reflectance. It also has applications in the field of catalysis.

Graphene NMP Dispersion, Purity: 99.5%, Graphene: 1,0 wt%

Price range: $70.00 through $516.00
Select options This product has multiple variants. The options may be chosen on the product page

Application Fields

1) XPS patterns of Single Layer Graphene 2) Catalyst 3) Supercapacitors 4) Solar energy 5) Graphene semiconductor chips 6) Conductive graphene film 7) Graphene computer memory 8) Biomaterials 9) Transparent conductive coatings

Borosilicate Wafer, Size: 4”, 2-Side polished, Thickness: 700 ± 20 μm

Price range: $70.00 through $978.00
Select options This product has multiple variants. The options may be chosen on the product page
Boroslicate Wafer Size: 4”, 2-Side polished, Thickness: 700 ± 20 μm Technical Properties: Materials Borosilicate Size (inch) 4” Orientation Coating

Lanthanum Trifluoride (LaF3) Nanopowder/Nanoparticles, Highly Dispersible, Purity: 99+%, Size: 30-50 nm

Price range: $70.00 through $1,538.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Lanthanum trifluoride nanoparticle coated with saturated alkyl can be dispersed in all kinds of lubricanting oil medium. It can be used as additive in anti-frictional lubricants.

Short Single Walled Carbon Nanotubes, Purity: > 65%, SSA: 400 m2/g

Price range: $70.00 through $820.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Single Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in drug delivery, biosensors, CNT composites, catalysis, nanoprobes, hydrogen storage, lithium batteries, gas-discharge tubes, flat panel displays, supercapacitors, transistors, solar cells, photoluminescence, templates.

Titanium Powder (Ti, ~6um, 99.5%)

Price range: $70.00 through $150.00
Select options This product has multiple variants. The options may be chosen on the product page
$70/25g
$150/100g

Product 

Titanium Powder (Ti, ~6um, 99.5%)

CAS No.

7440-32-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

~6um (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

47.87 g/mol

Melting Point

1,668 °C

Boiling Point

3,287 °C

Density

4.51 g/cm³

Product Codes

NCZ-1080K

Barium Titanate Nanoparticles/Nanopowder (BaTiO3, 99.9%, 400nm)

Price range: $70.00 through $155.00
Select options This product has multiple variants. The options may be chosen on the product page
$70/100g
$155/500g

Product 

Barium Titanate Nanoparticles/Nanopowder (BaTiO3, 99.9%, 400nm)

CAS No.

12047-27-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

400nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

233.19 g/mol

Melting Point

~1,625 °C

Boiling Point

 N/A

Density

~6.02 g/cm³

Product Codes

NCZ-1100K

Silicon Oxide Nanoparticles/ Nanopowder Modified with amino group

Price range: $70.00 through $333.00
Select options This product has multiple variants. The options may be chosen on the product page
$70/25g
$133/100g
$333/500g

Product 

Silicon Oxide Nanoparticles/ Nanopowder Modified with amino group

CAS No.

7631-86-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 10-20nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

60.08 g/mol

Melting Point

~1,710 °C (core SiO₂)

Boiling Point

~2,230 °C

Density

~2.1 – 2.2 g/cm³

Product Codes

NCZ-1167K

Silicon Oxide Nanoparticles / Nanopowder modified with epoxy group

Price range: $70.00 through $375.00
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$70/25g
$133/100g
$333/500g
$575/kg

Product 

Silicon Oxide Nanoparticles / Nanopowder modified with epoxy group

CAS No.

7631-86-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 10-20nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

60.08 g/mol

Melting Point

~1,710 °C (core SiO₂)

Boiling Point

~2,230 °C

Density

~2.1 – 2.2 g/cm³

Product Codes

NCZ-1168K

Silicon Oxide Nanoparticles / Nanopowder modified with double bond

Price range: $70.00 through $333.00
Select options This product has multiple variants. The options may be chosen on the product page
$70/25g
$133/100g
$333/500g

Product 

Silicon Oxide Nanoparticles / Nanopowder modified with double bond

CAS No.

7631-86-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 10-20nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

60.08 g/mol

Melting Point

~1,710 °C (core SiO₂)

Boiling Point

~2,230 °C

Density

~2.1 – 2.2 g/cm³

Product Codes

NCZ-1169K

Silicon Oxide Nanoparticles / Nanopowder modified with double layer

Price range: $70.00 through $333.00
Select options This product has multiple variants. The options may be chosen on the product page
$70/25g
$133/100g
$333/500g

Product 

Silicon Oxide Nanoparticles / Nanopowder modified with double layer

CAS No.

7631-86-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 10-20nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

60.08 g/mol

Melting Point

~1,710 °C (core SiO₂)

Boiling Point

~2,230 °C

Density

~2.1 – 2.2 g/cm³

Product Codes

NCZ-1170K

Zinc Oxide Nanopowder/ Nanoparticles ( Alumina Doped), 40nm

Price range: $70.00 through $115.00
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$70/100g
$115/500g

Product 

Zinc Oxide Nanopowder/ Nanoparticles ( Alumina Doped), 40nm

CAS No.

1314-13-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

40nm (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

81.38 g/mol

Melting Point

~1,975 °C

Boiling Point

~2,360 °C

Density

~5.4–5.6 g/cm³

Product Codes

NCZ-1218K

Zinc (Zn) Sputtering Target

Price range: $70.00 through $390.00
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Product 

Zinc (Zn) Sputtering Target

CAS No.

7440-66-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

65.38 g/mol

Melting Point

419.5 °C

Boiling Point

907 °C

Density

 7.14 g/cm³

Product Codes

NCZ-1310K

Industrial Grade Short Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 28-48 nm

Price range: $71.00 through $460.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Industrial Grade Short Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 28-48 nm

Price range: $71.00 through $462.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

(-OH) Functionalized Industrial Short Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 28-48 nm

Price range: $71.00 through $465.00
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Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Industrial Grade Short Multi Walled Carbon Nanotubes, Purity: > 92%, Outside Diameter: 28-48 nm

Price range: $71.00 through $461.00
Select options This product has multiple variants. The options may be chosen on the product page

Applications:

Multi Walled Carbon Nanotubes have a variety of potential applications in different fields. These applications include medicine, mechanics, electric-electronics, chemicals, energy and others. It can be applied in, 1-drug delivery, 2-biosensors, 3-CNT composites, 4-catalysis, 5-nanoprobes, 6-hydrogen storage, 7-lithium batteries, 8-gas-discharge tubes, 9-flat panel displays, 10-supercapacitors, 11-transistors, 12-solar cells, 13-photoluminescence, 14-templates

Prime Si+SiO2 Wafer (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0.001 – 0.01 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

Price range: $71.00 through $1,071.00
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1 piece/64 € 5 pieces/265 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (wet)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (wet)
Size (inch) 4”
Orientation (100)
Coating 500 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 0.001 - 0.01
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime Si+SiO2 Wafer (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 100 nm

Price range: $71.00 through $1,071.00
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1 piece/64 € 5 pieces/225 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime Si+SiO2 Wafer (dry)

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 525 ± 25 μm, Coating 100 nm

Technical Properties:

Quality Prime
Materials Si + SiO2 (dry)
Size (inch) 4”
Orientation (100)
Coating 100 nm
Thickness (μm) 525 ± 25
Doping Boron
Resistivity (ohm.cm) 1-10
Polished One  Side
Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures. Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C. Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator. In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics. It allows a very good thickness uniformity and purity. Therefore, this is the preferred way to produce high quality thin silicon oxide layers. Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 2000 – 4000 (ohm.cm), 1-Side Polished, Thickness: 300 ± 10 μm

Price range: $71.00 through $1,071.00
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1 piece/64 € 5 pieces/225 € 25 pieces/965 € Please contact us for quotes on larger quantities !!!

Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 300 ± 10 μm

Technical Properties:

Quality Prime
Materials FZ-Si
Size (inch) 4”
Orientation (100)
Coating
Thickness (μm) 300 ± 10
Doping Boron
Resistivity (ohm.cm) 2000 - 4000
Polished One Side
Float zone is referred as a very pure silicon that is produced by vertical zone melting. Compared to Czochralski method, crystals of FZ Silicon have higher purities. Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength. Flat zone silicons have very high resistivity distribution so they are specially used in detectors. There are some other properties that are needed to prevent detector noises. Some of these properties are minority carrier lifetime and bulk generation current. However, these two properties weigh less than the crstalline structure and purity of the wafer. Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.

Fused Silica Wafer, Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Price range: $71.00 through $1,498.00
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1 piece/64 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!! 

Fused Silica Wafer

Size: 4”, 2-Side Polished, Thickness: 500 ± 25 μm

Technical Properties:

Quality Prime
Materials Fused Silica
Size (inch) 4”
Orientation  
Coating  
Thickness (μm) 500 ± 25
Doping  
Resistivity (ohm.cm)  
Polished Double Side
Fused silica – also referred as fused quartz- is an amorphous phase of silica. Compared to borosilicate wafers, fused silica has no additives. Is almost chemically inactive. Has a very high thermal resistance. Has an improved optical transmission in deep UV (ultraviolet). Silica dust particles are deposited on the substrate first, solidification of these molten particles creates a pure fused phase on the surface with the help of flame hydrolysis.

Fused Silica Wafer, Size: 6”, 2-Side Polished, Thickness: 700 ± 25 μm

Price range: $71.00 through $1,498.00
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1 piece/64 € 5 pieces/290 € 25 pieces/1350 € Please contact us for quotes on larger quantities !!!

Fused Silica Wafer

Size: 6”, 2-Side Polished, Thickness: 700 ± 25 μm

Technical Properties:

Quality Prime
Materials Fused Silica
Size (inch) 6”
Orientation
Coating
Thickness (μm) 700 ± 25
Doping
Resistivity (ohm.cm)
Polished Double Side
Fused silica – also referred as fused quartz- is an amorphous phase of silica. Compared to borosilicate wafers, fused silica has no additives. Is almost chemically inactive. Has a very high thermal resistance. Has an improved optical transmission in deep UV (ultraviolet). Silica dust particles are deposited on the substrate first, solidification of these molten particles creates a pure fused phase on the surface with the help of flame hydrolysis.

Multi Walled Carbon Nanotubes Water Dispersion, 4 wt%, Purity: > 96%, OD: 18-28 nm, Length: 8-35 um

Price range: $71.00 through $1,257.00
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30 ml/65 € 60 ml/120 €                         120 ml/185 €                      500 ml/660 €                   1000 ml/1140 € Please contact us for quotes on larger quantities !!!

Multi Walled Carbon Nanotubes Water Dispersion

4 wt%, Purity: > 96+ %, OD: 18-28 nm, Length: 8-35 µm

Multi Walled Carbon NanoTubes Water Dispersion is obtained by dispersing MWCNT in deionized water without the addition of any surfactant. MWCNT water dispersions appear to have great industrial and medical potential. Dispersion of MWCNT in water is widely used inmass production because of its excellent mechanical and electrical properties. Our company sells multi walled carbon nanotubes water dispersion with various options.

Technical Properties:

Purity >96+ %
Color black
Average Outside Diameter (nm) 18-28
Average Inside Diameter (nm) 5.0-10.0
Length (µm) 8-35
Tap Density (g/cm3) 0.30
True Density (g/cm3) 2.4
Specific Surface Area (m2/g) 120
Ash <1.5 wt%
Electrical Conductivity (S/cm) >98
Manufacturing Method CVD

Applications:

MWCNTs have a variety of potential applications in different fields. These applications include medicine, mechanical, electric, chemical, energy and others. It can be applied in drug delivery, biosensors, CNT composites, catalysis, nanoprobes, hydrogen storage, lithium batteries, gas-discharge tubes, flat panel display, supercapacitor, transistors, solar cells, photoluminescence, template.

Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in Water, Rutile, Size: 25-45 nm, 22 wt%

Price range: $71.00 through $154.00
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Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in Water Rutile, Size: 25-45 nm, 22 wt%

Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in Water, Rutile, Size: 4-28 nm, 17 wt%

Price range: $71.00 through $154.00
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Titanium Dioxide (TiO2) Nanopowder/Nanoparticles Dispersion in Water Rutile, Size: 4-28 nm, 17 wt%

Dysprosium Oxide (Dy2O3) Micron Powder, Purity: 99.99%, Size: 325 mesh

Price range: $71.00 through $579.00
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Applications:

Dysprosium oxide shows good magnetic and optical properties. these properties are applied in magneto-optical recording materials and in luminescence. It is a neutron absorbent and used in the measurement of neutron energy-spectrum and in nuclear reaction control rods. It is used as glass material in laser-based and optical devices with a Faraday Rotation affect.

Erbium Oxide (Er2O3) Micron Powder, Purity: 99.99%, Size: 325 mesh

Price range: $71.00 through $415.00
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Applications:

Erbium oxide is used in electronic devices. It is used in capacitors, metal-oxide semiconductor transistors, and as adopants for optical fiber and laser materials. It is also used as tunned insulator for josephson junctions.

vNeodymium Oxide (Nd2O3) Micron Powder, Purity: 99.99%, Size: 325 mesh

Price range: $71.00 through $844.00
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Applications:

Neodymium oxide is used in solid state laser manufacturing. It is used as a dopant in glass to color the glass and to improve its properties. It gives purple color when is doped to glass and give dichroic properties to it.

316SS Coin Cell Conical Spring for CR2032, Diameter: 15.4 mm, Height: 1.2 mm, Thickness: 0.25 mm

Price range: $71.00 through $274.00
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Applications:

316SS Coin Cell Conical Spring For CR2032 for Battery Research