Platinum (Pt) Sputtering Target

Price range: $0.00 through $12,410.00
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Product 

Platinum (Pt) Sputtering Target

CAS No.

 7440-05-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

195.08 g/mol

Melting Point

1,768.3 °C

Boiling Point

3,825 °C

Density

21.45 g/cm³

Product Codes

NCZ-1301K

Palladium (Pd) Sputtering Target

Price range: $0.00 through $7,030.00
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Product 

Palladium (Pd) Sputtering Target

CAS No.

 7440-05-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

106.42 g/mol

Melting Point

 1,554.9 °C

Boiling Point

2,963 °C

Density

12.02 g/cm³

Product Codes

NCZ-1300K

Hafnium (Hf) Sputtering Target

Price range: $440.00 through $2,850.00
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Product 

Hafnium (Hf) Sputtering Target

CAS No.

7440-58-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 178.49 g/mol

Melting Point

2,233 °C

Boiling Point

4,603 °C

Density

13.31 g/cm³

Product Codes

NCZ-1291K

Aluminum (Al) Sputtering Target

Price range: $179.00 through $2,300.00
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Product 

Aluminum (Al) Sputtering Target

CAS No.

7429-90-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N\A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

26.98 g/mol

Melting Point

 660.3 °C

Boiling Point

 2,470 °C

Density

~2.70 g/cm³

Product Codes

NCZ-1284K

Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$2,178.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Scandium (Sc) Sputtering Target

Price range: $927.00 through $2,148.00
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Product 

Scandium (Sc) Sputtering Target

CAS No.

7440-20-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

44.96 g/mol

Melting Point

 1,541 °C

Boiling Point

 2,838 °C

Density

2.99 g/cm³

Product Codes

NCZ-1359K

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.99%, Size: 4”, Thickness: 0.125”, Beige to White

$2,002.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Strontium Ruthenate (SrRuO3) Sputtering Target

$1,890.00

Product 

Strontium Ruthenate (SrRuO3) Sputtering Target

CAS No.

12169-14-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

236.63 g/mol

Melting Point

>1,800 °C

Boiling Point

N/A

Density

 6.97 g/cm³

Product Codes

NCZ-1377K

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$1,843.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Europium (Eu) Sputtering Target

Price range: $515.00 through $1,814.00
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Product 

Europium (Eu) Sputtering Target

CAS No.

7440-53-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

151.964 g/mol

Melting Point

826 °C

Boiling Point

1,529 °C

Density

~5.24 g/cm³

Product Codes

NCZ-1288K

Lead Telluride (PbTe) Sputtering Target

Price range: $566.00 through $1,794.00
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Product 

Lead Telluride (PbTe) Sputtering Target

CAS No.

1314-91-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 334.8 g/mol

Melting Point

~924 °C

Boiling Point

~1,476 °C

Density

~8.16 g/cm³

Product Codes

NCZ-1345K

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”, Beige to White

$1,751.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,717.00

Applications of Sputtering Targets;

Film deposition is done using puttering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lutetium Oxide (Lu2O3) Sputtering Target, CAS 12032-20-1

Price range: $684.00 through $1,623.00
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Product 

Lutetium Oxide (Lu2O3) Sputtering Target, CAS 12032-20-1

CAS No.

12032‑20‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

397.93–397.94 g/mol

Melting Point

~2,490 °C

Boiling Point

~3,980 °C

Density

~9.42 g/cm³

Product Codes

NCZ-1374K

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 6”, Thickness: 0.250”, Beige to White

$1,620.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 8”, Thickness: 0.250”, Beige to White

$1,608.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum fluoride (LaF3) Sputtering Target

Price range: $672.00 through $1,599.00
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Product 

Lanthanum fluoride (LaF3) Sputtering Target

CAS No.

13709‑38‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~195.9 g/mol

Melting Point

~1,493 °C

Boiling Point

N/A

Density

~5.9–5.94 g/cm³

Product Codes

NCZ-1388K

Gadolinium Fluoride (GdF3) Sputtering Target

Price range: $372.00 through $1,599.00
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Product 

Gadolinium Fluoride (GdF3) Sputtering Target

CAS No.

13765‑26‑9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~214.25 g/mol

Melting Point

~1,231–1,372 °C (1,231 °C per American Elements; 1,372 °C

Boiling Point

 N/A

Density

~7.09 g/cm³

Product Codes

NCZ-1386K

Cerium Fluoride (CeF3) Sputtering Target

Price range: $672.00 through $1,599.00
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Product 

Cerium Fluoride (CeF3) Sputtering Target

CAS No.

7758‑88‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

197.12 g/mol

Melting Point

1,460 °C

Boiling Point

~2,300 °C

Density

 6.16 g/cm³

Product Codes

NCZ-1386K

Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,556.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”, Beige to White

$1,544.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Ytterbium (Yb) Sputtering Target

Price range: $328.00 through $1,520.00
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Product 

Ytterbium (Yb) Sputtering Target

CAS No.

7440‑64‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

50.9415 g/mol

Melting Point

~824 °C

Boiling Point

~1,196 °C

Density

~6.9 g/cm³

Product Codes

NCZ-1309K

Cerium Oxide (CeO2) Sputtering Target

Price range: $511.00 through $1,492.00
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Product 

Cerium Oxide (CeO2) Sputtering Target

CAS No.

1306-38-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

172.11 g/mol

Melting Point

~2,400 °C

Boiling Point

~3,500 °C

Density

~7.22 g/cm³

Product Codes

NCZ-1315K

Vanadium Carbide (VC) Sputtering Target

Price range: $502.00 through $1,468.00
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Product 

Vanadium Carbide (VC) Sputtering Target

CAS No.

 12070-10-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

62.95 g/mol

Melting Point

~2,810 °C

Boiling Point

~3,900 °C

Density

~5.77 g/cm³

Product Codes

NCZ-1338K

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.125”, Beige to White

$1,430.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Cadmium Selenide (CdSe) Sputtering Target

Price range: $587.00 through $1,417.00
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Product 

Cadmium Selenide (CdSe) Sputtering Target

CAS No.

1306‑24‑7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~191.37 g/mol

Melting Point

 ~1,240–1,350 °C

Boiling Point

N/A

Density

 ~5.81 g/cm³

Product Codes

NCZ-1389K

Titanium Nitride (TiN) Sputtering Targets, indium, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$1,389.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Cadmium Telluride (CdTe) Sputtering Target

Price range: $464.00 through $1,375.00
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Product 

Cadmium Telluride (CdTe) Sputtering Target

CAS No.

1306-25-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 240.01 g/mol

Melting Point

~1,041 °C

Boiling Point

~1,050 °C

Density

~6.2 g/cm³

Product Codes

NCZ-1344K

Tantalum Nitride (TaN) Sputtering Target

Price range: $622.00 through $1,375.00
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Product 

Tantalum Nitride (TaN) Sputtering Target

CAS No.

12033-62-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 194.96 g/mol

Melting Point

~3,090 °C

Boiling Point

 ~5,000 °C

Density

~14.3 g/cm³

Product Codes

NCZ-1334K

Tungsten Oxide (WO3) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$1,308.00

Applications of Sputtering Targets;

For film deposition, sputtering targets are employed. A sputtering technique called "deposition made by sputter targets" entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Targets are etched using semiconductor sputtering targets. When etching anisotropy is required to a great degree and selectivity is not an issue, sputter etching is the method of choice. By etching away the target material, sputter targets are also utilized for investigation. In one instance, the target sample is sputtered at a steady pace in secondary ion spectroscopy (SIMS). Using mass spectrometry, the concentration and identity of the spewed atoms are determined when the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Indium Oxide (In2O3) Sputtering Target

Price range: $339.00 through $1,265.00
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Product 

Indium Oxide (In2O3) Sputtering Target

CAS No.

1312-43-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

277.64 g/mol

Melting Point

~1,910 °C

Boiling Point

~3,000 °C

Density

~7.18 g/cm³

Product Codes

NCZ-1316K

Titanium Monoxide (TiO) Sputtering Target

Price range: $335.00 through $1,259.00
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Product 

Titanium Monoxide (TiO) Sputtering Target

CAS No.

12036-80-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 63.86 g/mol

Melting Point

~1,750 °C

Boiling Point

N\A

Density

~4.93 g/cm³

Product Codes

NCZ-1327K

Terbium (Tb) Sputtering Target

Price range: $510.00 through $1,249.00
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Product 

Terbium (Tb) Sputtering Target

CAS No.

7440-27-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

158.93 g/mol

Melting Point

1,356 °C

Boiling Point

3,123 °C

Density

 8.23 g/cm³

Product Codes

NCZ-1362K

Dysprosium (Dy) Sputtering Target

Price range: $510.00 through $1,249.00
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Product 

Dysprosium (Dy) Sputtering Target

CAS No.

 7429-91-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

162.5 g/mol

Melting Point

1,407 °C

Boiling Point

2,567 °C

Density

8.55 g/cm³

Product Codes

NCZ-1353K

Lithium Fluoride (LiF) Sputtering Target

Price range: $478.00 through $1,182.00
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Product 

Lithium Fluoride (LiF) Sputtering Target

CAS No.

7789‑24‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 25.94 g/mol

Melting Point

~845 °C

Boiling Point

~1,676 °C

Density

≈ 2.63–2.64 g/cm³

Product Codes

NCZ-1387K

Calcium (Ca) Sputtering Target

Price range: $478.00 through $1,182.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Calcium (Ca) Sputtering Target

CAS No.

7440-70-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.08 g/mol

Melting Point

 842 °C

Boiling Point

1,484 °C

Density

1.55 g/cm³

Product Codes

NCZ-1349K

Boron (B) Sputtering Target

Price range: $478.00 through $1,182.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Boron (B) Sputtering Target

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

10.81 g/mol

Melting Point

~2,076 °C

Boiling Point

~4,000 °C

Density

~2.34 g/cm³

Product Codes

NCZ-1348K

Barium (Ba) Sputtering Target

Price range: $478.00 through $1,182.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Barium (Ba) Sputtering Target

CAS No.

7440-39-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

137.33 g/mol

Melting Point

727 °C

Boiling Point

1,840 °C

Density

3.62 g/cm³

Product Codes

NCZ-1346K

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$1,176.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 3”, Thickness: 0.250”, Beige to White

$1,176.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,107.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$1,101.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Sulfide (ZnS) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$1,078.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Target

Price range: $519.00 through $1,070.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tungsten Oxide (WO3) Sputtering Target

CAS No.

1314-35-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

231.84 g/mol

Melting Point

~1,473 °C

Boiling Point

~1,700–1,830 °C

Density

~7.16 g/cm³

Product Codes

NCZ-1328K

Molybdenum Oxide (MoO3) Sputtering Target

Price range: $578.00 through $1,056.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Molybdenum Oxide (MoO3) Sputtering Target

CAS No.

 1313-27-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

143.94 g/mol

Melting Point

 795–802 °C

Boiling Point

1,155 °C

Density

4.69 – 4.70 g/cm³

Product Codes

NCZ-1375K

Titanium Nitride (TiN) Sputtering Targets, indium, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$1,044.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$1,038.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Holmium (Ho) Sputtering Target

Price range: $428.00 through $1,020.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Holmium (Ho) Sputtering Target

CAS No.

7440-60-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

164.930 g/mol

Melting Point

1,474 °C

Boiling Point

2,700 °C

Density

8.80 g/cm³

Product Codes

NCZ-1292K

Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$1,017.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Cadmium Sulfide (CdS) Sputtering Target

Price range: $440.00 through $1,010.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Cadmium Sulfide (CdS) Sputtering Target

CAS No.

1306-23-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

144.48 g/mol

Melting Point

~1,750 °C

Boiling Point

~980 °C

Density

~4.82 g/cm³

Product Codes

NCZ-1341K

Tantalum Oxide (Ta2O5) Sputtering Target

Price range: $375.00 through $1,007.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tantalum Oxide (Ta2O5) Sputtering Target

CAS No.

 1314-61-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

441.89 g/mol

Melting Point

~1,875 °C

Boiling Point

~3,000 °C

Density

~8.2 g/cm³

Product Codes

NCZ-1325K

Tantalum Oxide (Ta2O5) Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$999.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, indium, Purity: 99.99%, Size: 4”, Thickness: 0.125′

$996.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lithium Niobate (LiNbO3) Sputtering Target

Price range: $547.00 through $993.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lithium Niobate (LiNbO3) Sputtering Target

CAS No.

 12031-63-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

147.85 g/mol

Melting Point

~1,250 °C

Boiling Point

NA

Density

~4.65 g/cm³

Product Codes

NCZ-1319K

Lead Zirconate (PbZrO3) Sputtering Target

Price range: $566.00 through $993.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lead Zirconate (PbZrO3) Sputtering Target

CAS No.

 19824-65-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

303.5 g/mol

Melting Point

~1,250–1,300 °C

Boiling Point

NA

Density

~8.3–8.5 g/cm³

Product Codes

NCZ-1318K

Zirconium Carbide (ZrC) Sputtering Target

Price range: $390.00 through $991.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Zirconium Carbide (ZrC) Sputtering Target

CAS No.

 12070-14-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

103.23 g/mol

Melting Point

~3,530 °C

Boiling Point

 ~5,100 °C

Density

~6.59 g/cm³

Product Codes

NCZ-1339K

Zinc Oxide (ZnO) Sputtering Targets, indium, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$991.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Nickel Oxide (NiO) Sputtering Target

Price range: $357.00 through $990.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Nickel Oxide (NiO) Sputtering Target

CAS No.

1313-99-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

74.69 g/mol

Melting Point

~1,950 °C

Boiling Point

~2,730 °C

Density

~6.67 g/cm³

Product Codes

NCZ-1321K

Molybdenum Disulfide (MoS2) Sputtering Target

Price range: $394.00 through $989.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Molybdenum Disulfide (MoS2) Sputtering Target

CAS No.

1317-33-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

160.07 g/mol

Melting Point

~1,185 °C

Boiling Point

Sublimes (>2,000 °C)

Density

 ~5.06 g/cm³

Product Codes

NCZ-1342K

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.9%, Size: 4”, Thickness: 0.125”, Grey to Black

$986.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.