Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”, Beige to White

$980.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”, Beige to White

$980.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Magnesium Fluoride (MgF2) Sputtering Target

Price range: $421.00 through $975.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Magnesium Fluoride (MgF2) Sputtering Target

CAS No.

7783-40-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

62.30 g/mol

Melting Point

~1,261 °C

Boiling Point

~2,260 °C

Density

 ~3.15 g/cm³

Product Codes

NCZ-1340K

Europium Oxide (Eu2O3) Sputtering Target

Price range: $381.00 through $972.00
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Product 

Europium Oxide (Eu2O3) Sputtering Target

CAS No.

1308-96-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 351.93 g/mol

Melting Point

2,290 °C

Boiling Point

 ~4,000 °C (sublimes)

Density

7.42 g/cm³

Product Codes

NCZ-1369K

Vanadium Oxide (V2O5) Sputtering Target

Price range: $446.00 through $965.00
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Product 

Vanadium Oxide (V2O5) Sputtering Target

CAS No.

 1314-62-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

181.88 g/mol

Melting Point

~690 °C

Boiling Point

~1,750 °C

Density

~3.36 g/cm³

Product Codes

NCZ-1329K

Lanthanum (La) Sputtering Target

Price range: $375.00 through $965.00
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Product 

Lanthanum (La) Sputtering Target

CAS No.

7439-91-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

138.91 g/mol

Melting Point

920 °C

Boiling Point

3,464 °C

Density

6.16 g/cm³

Product Codes

NCZ-1294K

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

$960.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Carbide (WC) Sputtering Target

Price range: $388.00 through $959.00
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Product 

Tungsten Carbide (WC) Sputtering Target

CAS No.

12070-12-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 195.85 g/mol

Melting Point

~2,870 °C

Boiling Point

 ~6,000 °C

Density

 ~15.6 g/cm³

Product Codes

NCZ-1337K

Manganese (Mn) Sputtering Target

Price range: $210.00 through $956.00
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Product 

Manganese (Mn) Sputtering Target

CAS No.

7439-96-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

54.938 g/mol

Melting Point

1,246 °C

Boiling Point

2,061 °C

Density

1.738 g/cm³

Product Codes

NCZ-1297K

Yttrium Oxide (Y2O3) Sputtering Target

Price range: $420.00 through $948.00
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Product 

Yttrium Oxide (Y2O3) Sputtering Target

CAS No.

 1314-36-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

225.81 g/mol

Melting Point

~2,430 °C

Boiling Point

~4,300 °C

Density

~5.01 g/cm³

Product Codes

NCZ-1330K

Zinc Selenide (ZnSe) Sputtering Target

Price range: $365.00 through $939.00
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Product 

Zinc Selenide (ZnSe) Sputtering Target

CAS No.

1315‑09‑9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~144.35 g/mol

Melting Point

1,525 °C

Boiling Point

N/A

Density

5.27–5.30 g/cm³

Product Codes

NCZ-1390K

Titanium Nitride (TiN) Sputtering Target

Price range: $346.00 through $933.00
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Product 

Titanium Nitride (TiN) Sputtering Target

CAS No.

25583-20-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

61.87 g/mol

Melting Point

~2,940 °C

Boiling Point

~3,560 °C

Density

~5.4 g/cm³

Product Codes

NCZ-1335K

Antimony (Sb) Sputtering Target

Price range: $423.00 through $930.00
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Product 

Antimony (Sb) Sputtering Target

CAS No.

7440-36-0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

121.76 g/mol

Melting Point

630.63 °C

Boiling Point

1,580 °C

Density

~6.697 g/cm³

Product Codes

NCZ-1285K

Zinc Oxide (ZnO) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$930.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$930.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Lanthanum Aluminate (LaAlO3) Sputtering Target

Price range: $427.00 through $928.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lanthanum Aluminate (LaAlO3) Sputtering Target

CAS No.

12003-62-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

221.89 g/mol

Melting Point

~2,078 °C

Boiling Point

N\A

Density

~6.52 g/cm³

Product Codes

NCZ-1317K

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”, Grey to Black

$928.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Selenium (Se) Sputtering Target

Price range: $261.00 through $923.00
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Product 

Selenium (Se) Sputtering Target

CAS No.

7782‑49‑2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~78.96 u/g·mol

Melting Point

~217 °C

Boiling Point

~685 °C

Density

~4.79 g/cm³

Product Codes

NCZ-1303K

Zinc Sulfide (ZnS) Sputtering Target

Price range: $232.00 through $919.00
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Product 

Zinc Sulfide (ZnS) Sputtering Target

CAS No.

 1314-98-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

97.45 g/mol

Melting Point

~1,850 °C

Boiling Point

(~1,180–1,200 °C)

Density

~4.09 g/cm³

Product Codes

NCZ-1343K

Vanadium Oxide (V2O5) Sputtering Targets, elastomer, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$919.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Silicon Carbide (SiC) Sputtering Target

Price range: $368.00 through $914.00
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Product 

Silicon Carbide (SiC) Sputtering Target

CAS No.

409-21-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.10 g/mol

Melting Point

~2,730 °C

Boiling Point

 ~2,700–3,000 °C

Density

~3.21 g/cm³

Product Codes

NCZ-1336K

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.95%, Size: 4”, Thickness: 0.125” , Grey to Black

$909.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Target

Price range: $137.00 through $904.00
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Product 

Tantalum (Ta) Sputtering Target

CAS No.

7440-25-7

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 180.95 g/mol

Melting Point

3,017 °C

Boiling Point

5,458 °C

Density

16.69 g/cm³

Product Codes

NCZ-1305K

Gadolinium (Gd) Sputtering Target

Price range: $254.00 through $904.00
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Product 

Gadolinium (Gd) Sputtering Target

CAS No.

7440-54-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

157.25 g/mol

Melting Point

1,312 °C

Boiling Point

3,273 °C

Density

7.90 g/cm³

Product Codes

NCZ-1289K

Aluminum Fluoride (AlF3) Sputtering Target

Price range: $348.00 through $901.00
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Product 

Aluminum Fluoride (AlF3) Sputtering Target

CAS No.

 7784‑18‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 83.98 g/mol

Melting Point

~1,291 °C

Boiling Point

N/A

Density

 ~2.88 g/cm³

Product Codes

NCZ-1384K

Ytterbium Oxide (Yb2O3) Sputtering Target

Price range: $348.00 through $901.00
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Product 

Ytterbium Oxide (Yb2O3) Sputtering Target

CAS No.

1314‑37‑0

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 394.08 g/mol

Melting Point

 2,355 °C

Boiling Point

 ~4,070 °C

Density

 9.17 g/cm³

Product Codes

NCZ-1380K

Gadolinium Oxide (Gd2O3) Sputtering Target

Price range: $348.00 through $901.00
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Product 

Gadolinium Oxide (Gd2O3) Sputtering Target

CAS No.

12064-62-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

362.50 g/mol

Melting Point

 2,420 °C

Boiling Point

~4,000 °C

Density

7.41 g/cm³

Product Codes

NCZ-1371K

Magnesium Oxide (MgO) Sputtering Target

Price range: $423.00 through $901.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Magnesium Oxide (MgO) Sputtering Target

CAS No.

1309-48-4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

40.30 g/mol

Melting Point

 ~2,800 °C

Boiling Point

 ~3,600 °C

Density

~3.58 g/cm³

Product Codes

NCZ-1320K

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.250”

$873.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron Nitride (BN) Sputtering Target

Price range: $288.00 through $852.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Boron Nitride (BN) Sputtering Target

CAS No.

10043-11-5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

24.82 g/mol

Melting Point

~2,973 °C

Boiling Point

N/A

Density

 ~2.1–3.5 g/cm³

Product Codes

NCZ-1333K

Zinc Sulfide (ZnS) Sputtering Targets, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$849.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Dioxide (TiO2) Sputtering Targets, Purity: 99.99%, Size: 2”, Thickness: 0.250”, Beige to White

$848.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) with Alumina Sputtering Targets, indium, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$847.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.250”

$840.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Calcium Fluoride (CaF2) Sputtering Target

Price range: $316.00 through $833.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Calcium Fluoride (CaF2) Sputtering Target

CAS No.

 7789‑75‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

78.07–78.08 g/mol

Melting Point

~1,418 °C

Boiling Point

 ~2,533 °C

Density

≈ 3.18–3.2 g/cm³

Product Codes

NCZ-1385K

Calcium Fluoride (CaF2) Sputtering Target

Price range: $316.00 through $833.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Calcium Fluoride (CaF2) Sputtering Target

CAS No.

 7789‑75‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

78.07–78.08 g/mol

Melting Point

~1,418 °C

Boiling Point

 ~2,533 °C

Density

≈ 3.18–3.2 g/cm³

Product Codes

NCZ-1385K

Titanium Carbide (TiC) Sputtering Target

Price range: $316.00 through $833.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Titanium Carbide (TiC) Sputtering Target

CAS No.

 12070‑08‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

59.89 g/mol

Melting Point

3,140–3,160 °C

Boiling Point

4,820 °C

Density

4.93 g/cm³

Product Codes

NCZ-1383K

Zirconium Oxide (ZrO2) Sputtering Target

Price range: $316.00 through $833.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Zirconium Oxide (ZrO2) Sputtering Target

CAS No.

 1314‑23‑4

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

123.22 g/mol

Melting Point

2 715 °C

Boiling Point

~4 300 °C

Density

~5.68 g/cm³

Product Codes

NCZ-1381K

Lead Oxide (PbO) Sputtering Target

Price range: $316.00 through $833.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lead Oxide (PbO) Sputtering Target

CAS No.

1317-36-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

223.20 g/mol

Melting Point

 888 °C

Boiling Point

 1470 °C

Density

9.53 g/cm³

Product Codes

NCZ-1373K

Tellurium (Te) Sputtering Target

Price range: $316.00 through $833.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Tellurium (Te) Sputtering Target

CAS No.

13494-80-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 127.60 g/mol

Melting Point

449.5 °C

Boiling Point

 988 °C

Density

6.24 g/cm³

Product Codes

NCZ-1361K

Titanium Dioxide (TiO2) Sputtering Targets, indium, Purity: 99.99%, Size: 1”, Thickness: 0.125”, Beige to White

$823.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 4”, Thickness: 0.250”

$818.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Titanium Nitride (TiN) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$814.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When etching anisotropy is high, sputter etching is the preferred method.

is required, and selectivity is unimportant. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Strontium Titanate (SrTiO3) Sputtering Target

Price range: $471.00 through $811.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Strontium Titanate (SrTiO3) Sputtering Target

CAS No.

12060-59-2

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

183.49 g/mol

Melting Point

~2,080 °C

Boiling Point

N\A

Density

~5.12 g/cm³

Product Codes

NCZ-1324K

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 8”, Thickness: 0.125”

$810.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Samarium (Sm) Sputtering Target

Price range: $272.00 through $803.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Samarium (Sm) Sputtering Target

CAS No.

7440-19-9

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 150.36 g/mol

Melting Point

 1,072 °C

Boiling Point

 1,794 °C

Density

7.54 g/cm³

Product Codes

NCZ-1302K

Yttrium Ferrite (Y3Fe5O12) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$788.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Indium (In) Sputtering Target

Price range: $139.00 through $787.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Indium (In) Sputtering Target

CAS No.

7440-74-6

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

114.82 g/mol

Melting Point

156.6 °C

Boiling Point

 2,072 °C

Density

7.31 g/cm³

Product Codes

NCZ-1293K

Titanium Nitride (TiN) Sputtering Targets, indium, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$783.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Zinc Oxide (ZnO) Sputtering Targets, indium, Purity: 99.99%, Size: 2”, Thickness: 0.125”

$781.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tungsten Oxide (WO3) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.250”

$780.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, elastomer, Purity: 99.99%, Size: 4”, Thickness: 0.125”

$780.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tantalum (Ta) Sputtering Targets, Purity: 99.95%, Size: 6”, Thickness: 0.250”

$780.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Yttrium Ferrite (Y3Fe5O12) Sputtering Targets, Purity: 99.9%, Size: 1”, Thickness: 0.125”

$780.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Titanium Carbide (TiC) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$776.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Tin Oxide (SnO2) Sputtering Targets, elastomer, Purity: 99.99%, Size: 3”, Thickness: 0.125”

$774.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Yttrium (Y) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.250”

$767.00

Applications of Sputtering Targets;

  • Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering that involves eroding material from a "target" source onto a "substrate" such as  a silicon wafer.
  • Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy is needed and selectivity is not a concern.
  • Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered, the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the target material can be determined and even extremely low concentrations of impurities are detected. Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and chemical properties of airless bodies, such as asteroids and the Moon.

Silicon Nitride (Si3N4) Sputtering Target

Price range: $284.00 through $762.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Silicon Nitride (Si3N4) Sputtering Target

CAS No.

12033‑89‑5

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 140.28 g/mol

Melting Point

~1,900 °C

Boiling Point

N/A

Density

 ~2.2–3.5 g/cm³

Product Codes

NCZ-1382K

Samarium Oxide (Sm2O3) Sputtering Target

Price range: $284.00 through $762.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Samarium Oxide (Sm2O3) Sputtering Target

CAS No.

 12060‑58‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

~348.8 g/mol

Melting Point

~2,335 °C

Boiling Point

~4,118 °C

Density

 ~8.35 – 7.60 g/cm³

Product Codes

NCZ-1376K

Lanthanum Oxide (La2O3) Sputtering Target

Price range: $284.00 through $762.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Lanthanum Oxide (La2O3) Sputtering Target

CAS No.

1312-81-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 325.81 g/mol

Melting Point

2,313 °C

Boiling Point

~4,200 °C

Density

6.51 g/cm³

Product Codes

NCZ-1372K