Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$678.00

Product 

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

 1304-76-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

465.96 g/mol

Melting Point

 ~817 °C

Boiling Point

N/A

Density

 ~8.9 g/cm³

Product Codes

NCZ-2410K

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$585.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$585.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$678.00

Product 

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

 1304-76-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

465.96 g/mol

Melting Point

 ~817 °C

Boiling Point

N/A

Density

 ~8.9 g/cm³

Product Codes

NCZ-2409K

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$675.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$783.00

Product 

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

 1304-76-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

465.96 g/mol

Melting Point

 ~817 °C

Boiling Point

N/A

Density

 ~8.9 g/cm³

Product Codes

NCZ-2408K

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$675.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$783.00

Product 

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

CAS No.

 1304-76-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

465.96 g/mol

Melting Point

 ~817 °C

Boiling Point

N/A

Density

 ~8.9 g/cm³

Product Codes

NCZ-2407K

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$810.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$940.00

Product 

Bismuth Oxide (Bi2O3) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

 1304-76-3

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

465.96 g/mol

Melting Point

 ~817 °C

Boiling Point

N/A

Density

 ~8.9 g/cm³

Product Codes

NCZ-2406K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$547.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$547.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.125”

$633.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.125''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2403K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$547.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 1”, Thickness: 0.250”

$633.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 1'', Thickness: 0.250''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2402K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$802.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.125”

$931.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.125''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2401K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$660.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 2”, Thickness: 0.250”

$766.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 2'', Thickness: 0.250''

CAS No.

1304‑82‑1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

Bi₂Te₃ (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.76 g/mol

Melting Point

~585 °C

Boiling Point

N/A

Density

~7.64–7.74 g/cm³

Product Codes

NCZ-1400K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.125”

$1,518.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.125''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2400K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$1,305.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 3”, Thickness: 0.250”

$1,518.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 3'', Thickness: 0.250''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2399K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$1,665.00

Applications of Sputtering Targets;.

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.125”

$1,939.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.125''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2398K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$1,665.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 4”, Thickness: 0.250”

$1,939.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 4'', Thickness: 0.250''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2397K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 6”, Thickness: 0.250”

$1,750.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 6”, Thickness: 0.250”

$2,038.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 6'', Thickness: 0.250''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2396K

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$1,810.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Bi2Te3, or bismuth telluride, is a gray powder that is a combination of bismuth and tellurium. It is a semiconductor that becomes an effective thermoelectric material for refrigeration or portable power generation when alloyed with antimony or selenium. Since Bi2Te3 is a topological insulator, its physical characteristics depend on its thickness.

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 8”, Thickness: 0.250”

$2,108.00

Product 

Bismuth Telluride (Bi2Te3) Sputtering Targets, Purity: 99.999%, Size: 8'', Thickness: 0.250''

CAS No.

 1304-82-1

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

800.55 g/mol

Melting Point

~585 °C

Boiling Point

~987 °C (sublimes)

Density

 ~7.7 g/cm³

Product Codes

NCZ-2395K

Boron (B) Sputtering Target

Price range: $478.00 through $1,182.00
Select options This product has multiple variants. The options may be chosen on the product page

Product 

Boron (B) Sputtering Target

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 NA (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

10.81 g/mol

Melting Point

~2,076 °C

Boiling Point

~4,000 °C

Density

~2.34 g/cm³

Product Codes

NCZ-1348K

Boron (B) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$496.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$574.00

Product 

Boron (B) Sputtering Targets, elastomer, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2389K

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$502.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$581.00

Product 

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2390K

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$732.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$849.00

Product 

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2388K

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,019.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$1,184.00

Product 

Boron (B) Sputtering Targets, indium, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2387K

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$273.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$273.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.125”

$314.00

Product 

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.125''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 B (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

10.81 g/mol

Melting Point

~2079 °C

Boiling Point

~2550 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-1397K

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$328.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 2”, Thickness: 0.250”

$378.00

Product 

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 2'', Thickness: 0.250''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2394K

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$358.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.125”

$413.00

Product 

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.125''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2393K

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$491.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 3”, Thickness: 0.250”

$568.00

Product 

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 3'', Thickness: 0.250''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2392K

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$637.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 4”, Thickness: 0.125”

$738.00

Product 

Boron (B) Sputtering Targets, Purity: 99.9%, Size: 4'', Thickness: 0.125''

CAS No.

7440-42-8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 10.81 g/mol

Melting Point

~2076 °C

Boiling Point

 ~3927 °C

Density

 ~2.34 g/cm³

Product Codes

NCZ-2391K

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$578.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation.

In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered. The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 1”, Thickness: 0.125”

$669.00

Product 

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 1'', Thickness: 0.125''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2379K

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$634.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 2”, Thickness: 0.125”

$735.00

Product 

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 2'', Thickness: 0.125''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2378K

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 3”, Thickness: 0.125”

$1,003.00

Product 

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 3'', Thickness: 0.125''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2377K

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$937.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 4”, Thickness: 0.125”

$1,089.00

Product 

Boron Carbide (B4C) Sputtering Targets, indium, Purity: 99.5%, Size: 4'', Thickness: 0.125''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ≈ 55.26 g/mol

Melting Point

~2350 °C

Boiling Point

 > 3500 °C (decomposes and volatilizes quickly above ~2800 °C)

Density

approximately ~2.5 g/cm³ for typical solid form

Product Codes

NCZ-2376K

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5, Size: 8”, Thickness: 0.250”

$575.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the target material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5, Size: 8”, Thickness: 0.250”

$1,536.00

Product 

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5, Size: 8'', Thickness: 0.250''

CAS No.

12069‑32‑8

Appearance

Powder

Purity

≥99%,  ≥99.9%,  ≥95%

(Other purities are also available)

APS

 N/A (Size Can be customized), Ask for other available size ranges.

Ingredient

N/A

Molecular Weight

 ~55.26 g/mol

Melting Point

~2350 °C

Boiling Point

> 3500 °C (decomposes above ~2800 °C)

Density

 ~2.37 g/cm³ (theoretical)

Product Codes

NCZ-2380K

Boron Carbide (B4C) Sputtering Targets, Purity: 99.5%, Size: 3”, Thickness: 0.250”

$502.00

Applications of Sputtering Targets;

Film deposition is accomplished using sputtering targets. A technique for sputtering thin films is called "deposition made by sputter targets," which entails eroding material from a "target" source onto a "substrate" like a silicon wafer. Etching of the target is done using semiconductor sputtering targets. When selectivity is not an issue and a high degree of etching anisotropy is required, sputter etching is the method of choice. By removing the target material through etching, sputter targets are also utilized for investigation. In secondary ion spectroscopy (SIMS), one example is when the targ

The target material's composition may be ascertained and even very low concentrations of contaminants can be found with the aid of the sputtering target.

There is also an application area for sputtering targets in space. One type of space weathering that alters the chemical and physical characteristics of airless worlds like the Moon and asteroids is sputtering.

et material is sputtered at a steady pace. Mass spectrometry is used to quantify the concentration and identity of spewed atoms as the target is sputtered.